SDR952ZDTXV [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254Z, 3 PIN;型号: | SDR952ZDTXV |
厂家: | SOLID STATES DEVICES, INC |
描述: | Rectifier Diode, 1 Phase, 1 Element, 50A, 200V V(RRM), Silicon, TO-254AA, HERMETIC SEALED, TO-254Z, 3 PIN 超快速恢复二极管 局域网 |
文件: | 总2页 (文件大小:78K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SDR950M & Z
Thru
SDR952M & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
__ __ __
50A, 35nsec typ., 100-200 V
Hyper Fast Rectifier
SDR950
¦
¦
¦
¦
+
Screening 2/ __ = Not Screened
¦
¦
¦
¦
TX = TX Level
TXV = TXV Level
S = S Level
Features:
¦
¦
·
·
·
·
·
·
·
·
Hyper Fast Recovery: 50nsec Maximum 3/
High Surge Rating
¦
¦
+
Leg Bend Option
(See Figure 1)
+
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Package M = TO-254, Z = TO-254Z
·
·
Ceramic Seal for Improved Hermeticity Available
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Symbol
Value
Units
100
150
200
SDR950M & Z
SDR951M & Z
SDR952M & Z
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Volts
Average Rectified Forward Current
50
Io
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 5/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, or equivalent DC)
350
IFSM
Amps
ºC
4/
-65 to +200
Operating & Storage Temperature
TOP & TSTG
Maximum Total Thermal Resistance
Junction to Case 4/
RqJC
0.85
ºC/W
-
Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: I =10 Amp, di/dt = 200A/µs
F
4/ Pins 2 and 3 Tied Together.
5/ TC = 150°C, Derate to 0A @ 200°C.
-
TO -254 (M)
-
TO -254Z (Z)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0039K
DOC
SDR950M & Z
Thru
SDR952M & Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Max
Units
Instantaneous Forward Voltage Drop
(IF = 25A, 300-500µsec Pulse)
(IF = 50A, 300-500µsec Pulse)
TA = 25 ºC
TA = 25 ºC
VF1
VF2
1.00
1.25
VDC
VDC
Instantaneous Forward Voltage Drop
TA = -55 ºC
VF3
1.35
(IF = 50Adc, 300-500µsec Pulse)
Reverse Leakage Current
(300µsec Pulse Minimum)
TA = 25 ºC, Rated V
TC = 100 ºC, 80% of Rated V
R
IR1
IR2
100
10
mA
mA
R
Reverse Recovery Time
(IF =10 Amp, di/dt = 200A/µs)
tRR
CJ
50
nsec
pF
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
900
PIN ASSIGNMENT
Figure 1- Optional Lead Bends
Code
Pin 1
Pin 2
Pin 3
FUNCTION
Cathode Anode
Anode
Suffix MD & ZD
Suffix MU & ZU
TO -254 (Suffix M) Outline:
TO -254Z (Suffix Z) Outline:
Measured in Inches
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0039K
DOC
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