SDR60U080CTNS [SSDI]
Rectifier Diode, 1 Phase, 2 Element, 60A, 800V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN;
| 型号： | SDR60U080CTNS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 60A, 800V V(RRM), Silicon, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR60U080CT
thru
SDR60U120CT
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
60 AMP
ULTRA FAST LOW VF
CENTERTAP RECTIFIER
800 -1200 Volts
SDR60
___ ___ ___ ___ ___
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
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55 nsec
Package Type
N = TO-258
P = TO-259
Features:
Ultra Fast Recovery: 40 nsec typical
High Surge Rating
Low Reverse Leakage Current
Low Forward Voltage Drop
Configuration
CT = Common Cathode
CA = Common Anode
D = Doubler
Low Junction Capacitance
DR = Doubler Reverse
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
Available in Centertap and Doubler versions
TX, TXV, Space Level Screening Available Consult
Factory.
Voltage/Family
080 = 800V
090 = 900V
100 = 1000V
110 = 1100V
120 = 1200V
Recovery Time
U = Ultra Fast
Maximum Ratings
Symbol
VRRM
VRWM
VR
Value
Units
Volts
Peak Repetitive Reverse and
DC Blocking Voltage
SDR60U080
SDR60U090
SDR60U100
SDR60U110
SDR60U120
800
900
1000
1100
1200
Average Rectified Forward Current
Io
60
Amps
(Resistive Load, 60 Hz Sine Wave, TA = 25ºC)3/4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
IFSM
Top & Tstg
RθJE
400
Amps
ºC
Reach Equilibrium Between Pulses, TA = 25ºC)3/
Operating & Storage Temperature
-65 to +200
Maximum Thermal Resistance
Junction to Case, each individual diode
Junction to Case3/
1.0
0.75
ºC/W
TO-258 (N)
TO-259 (P)
1/ For ordering information, price, operating curves, and availability - Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Both legs tied together.
4/ Package limited.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0145B
DOC
SDR60F080CT
thru SDR60U120CT Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics (per leg)
Symbol
VF1
Typ
1.65
1.75
1.90
2.10
1.75
1.80
1.95
2.10
1.75
1.30
1.65
1.95
Max
1.80
1.90
2.15
2.50
––
1.95
2.25
––
––
1.5
1.95
––
Units
Volts
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
IF = 10Adc
IF = 20Adc
IF = 50Adc
IF = 100Adc
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 sec pulse)
Instantaneous Forward Voltage Drop
(TA = -55ºC, 300 sec pulse)
VF2
Volts
Volts
Instantaneous Forward Voltage Drop
(TA = 125ºC, 300 sec pulse)
VF3
Reverse Leakage Current
IR1
IR2
IR3
IR4
CJ
50
3
250
––
A
mA
mA
mA
(Rated VR, TA = 25ºC, 300 sec pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 sec pulse minimum)
Reverse Leakage Current
(Rated VR, TA = 125ºC, 300 sec pulse minimum)
10
25
25
Reverse Leakage Current
(Rated VR, TA = 150ºC, 300 sec pulse minimum)
––
Junction Capacitance
(VR = 5 Vdc, TA = 25ºC, f = 1MHz)
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
100
85
––
150
pF
TA = 25ºC
TA = 100ºC
40
120
55
––
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0.25A)
nsec
trr
Case Outline: TO-259
Case Outline: TO-258
Note 1: Pin 2&3 connected together
Code
PIN ASSIGNMENT
Function
Pin 1
Anode
Pin 2
Cathode
Pin 3
CT
CA
D
Common Cathode
Common Anode
Doubler
Anode
Cathode
Anode
Cathode
Cathode
Anode
Anode
Anode / Cathode
Cathode / Anode
DR
Doubler Reverse
Cathode
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0145B
DOC
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