SDR1AHFSMS [SSDI]
1 AMP 50 - 1200 V 35 nsec Hyper Fast Rectifier; 1 AMP 50 - 1200 V 35纳秒的超快速整流器
| 型号： | SDR1AHFSMS |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 1 AMP 50 - 1200 V 35 nsec Hyper Fast Rectifier |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR1AHF & SDR1AHFSMS
thru
SDR1NHF & SDR1NHFSMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
1 AMP
50 - 1200 V
Features:
• Hyper Fast Recovery: 35 nsec maximum
35 nsec
• PIV to 1200 Volts
Hyper Fast Rectifier
• Hermetically Sealed
• Void Free Construction
• For High Efficiency Applications
• Single Chip Construction
• Low Reverse Leakage
Axial Lead Diode
SMS
• TX, TXV, S Level screening Available
Maximum Ratings
Symbol
Value
Units
50
100
200
400
600
800
1000
1200
Peak Repetitive Reverse and DC Blocking Voltage SDR1AHF
SDR1BHF
SDR1DHF
SDR1GHF
SDR1JHF
SDR1KHF
SDR1MHF
SDR1NHF
VRRM
VRSM
VR
Volts
Average Rectified Forward Current
(Resistive Load, 60 hz Sine Wave, TA = 25 °C)
Io
1.0
Amps
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)
IFSM
TOP & TSTG
RθJE
25
Amps
ºC
-65 to +175
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Leads, L = 3/8
Junction to Tabs
35
28
ºC/W
NOTE: All specifications are subject to change without notification.
DATA SHEET #: RH0119C
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SDR1AHF & SDR1AHFSMS
thru
SDR1NHF & SDR1NHFSMS
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Max
Units
VDC
VDC
µA
SDR1AHF – SDR1JHF
SDR1KHF – SDR1NHF
3.3
3.5
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = 25ºC, pulsed)
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = -55ºC, pulsed)
Reverse Leakage Current
(Rated VR, TA = 25ºC, pulsed)
VF
VF
IR
SDR1AHF – SDR1JHF
3.4
SDR1KHF – SDR1NHF
3.6
5
Reverse Leakage Current
(Rated VR, TA = 100ºC, pulsed)
Reverse Recovery Time
(IF = 500mA, IR = 1A, IRR = 250Ma, TA = 25ºC)
Junction Capacitance
(VR = 10VDC, f = 1MHz, TA = 25ºC)
200
35
µA
IR
nsec
pF
tRR
CJ
20
DIM
MIN
MAX
0.150”
0.190”
0.033”
––
Case Outline: (Axial)
––
––
0.027”
0.950”
A
B
C
D
DIM
A
MIN
MAX
0.153”
0.280”
0.028”
--
Case Outline: (SMS)
0.134”
0.200”
0.022”
0.002”
B
C
D
相关型号：
SDR1ASMMS
Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR1ASMMTX
Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
SDR1ASMMTXV
Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SSDI
©2020 ICPDF网 联系我们和版权申明