5R8STXV [SSDI]
Rectifier Diode, 1 Phase, 1 Element, 100A, 50V V(RRM), Silicon, DO-5,;
| 型号： | 5R8STXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 100A, 50V V(RRM), Silicon, DO-5, |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4R8S thru 15R8S
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
100 Amp
Part Number/Ordering Information 1/
__ R8S __
Ultra Fast Rectifier
40-150 VOLTS*
│
│
│
│
│
│
│
└
└
Screening 2/ __ = Not Screened
TX = TX Level
50 nsec
TXV = TXV Level
S = S Level
Features:
•
•
Ultra Fast Recovery: 50 nsec Maximum
Reverse Voltage to 150 Volts
* Higher Voltages Available – Consult Factory
Very Low Forward Voltage Drop
Low Reverse Leakage Single Chip
Construction
Family/Voltage
4 = 40V
5 = 50V
7 = 70V
10 = 100V
12 = 125V
15 = 150V
•
•
•
•
Hermetically Sealed
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings 3/
Symbol
Value
Units
Volts
4R8S
5R8S
7R8S
10R8S
12R8S
15R8S
40
50
70
100
125
150
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
VRM
VR
Half Wave Rectified Forward Current
Averaged Over Full Cycle
100
400
Io
Amps
Amps
Amps
(Resistive Load, 60 Hz, Sine Wave, TA = 55 °C)
Peak Repetitive Forward Current
(TC = 55°C, 8.3 ms Pulse, Allow Junction to Reach
Equilibrium Between Pulses)
IFSM
Peak Surge Current
(TC = 55°C, Superimposed on Rated Current at
Rated Voltage, 8.3 ms Pulse)
1000
IFSM
TOP & TSTG
RθJC
Operating & Storage Temperature
-65 to +175
0.65
ºC
Thermal Resistance (Junction to Case)
ºC/W
Notes:
1/ For ordering information, price, operating curves, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all maximum ratings/electrical characteristics @ 25°C.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0167B
DOC
4R8S thru 15R8S
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
Value
1.00
1.10
25
Units
VDC
Maximum Instantaneous Forward Voltage Drop
(IF =100Adc, TC = 25 ºC, 300-500μs Pulse)
VF
VF
IR
Maximum Instantaneous Forward Voltage Drop
(IF =100Adc, TA = -55 ºC, 300-500μs Pulse)
VDC
Maximum Reverse Leakage Current
(Rated VR, TC = 25 ºC)
μA
mA
nsec
pF
Maximum Reverse Leakage Current
(Rated VR, TC = 100 ºC)
IR
2
Reverse Recovery Time
(IF = 500 mA, IR = 1 Amp, IRR = 250 mA)
tRR
CJ
50
Maximum Junction Capacitance
(VR = 10VDC, TA = 25ºC)
400
Table 1- PIN ASSIGNMENT
Code
__
Configuration
Terminal
Stud
Normal
Anode
Cathode
R
Reverse
Cathode
Anode
DO-5 Outline (Normal Pin Configuration Shown):
.687
.667
.453
.422
1.00 MAX
.060 MIN
.220
Ø
.249
.667 .375
MAX MAX
1/4-28 UNF-2A
.200
.115
.450
MAX
.175
Ø
.080 MAX
.140
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0167B
DOC
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