1N7066FL [SSDI]
Rectifier Diode,;型号: | 1N7066FL |
厂家: | SOLID STATES DEVICES, INC |
描述: | Rectifier Diode, 整流二极管 超快速恢复二极管 |
文件: | 总2页 (文件大小:177K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PRELIMINARY
1N7066 thru 1N7068
and
1N7066SMS thru 1N7068SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
10 AMP
50 ─ 150 VOLTS
Designer’s Data Sheet
30 ns HYPERFAST RECOVERY
RECTIFIER
Part Number/Ordering Information 1/
1N70 __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
FEATURES:
•
•
•
•
•
•
•
•
•
Hyper Fast Reverse Recovery: 30ns Maximum4/
High Surge Current: 325 A Maximum
Hermetically Sealed
S = S Level
Low Forward Voltage Drop .95 @10A
Void Free Chip Construction
Solid Silver Leads
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Available in Axial & Square Tab Versions
TX, TXV, and S-Level Screening Available 2/
Axial Lead Higher Current Replacements for:
1N5807, 1N5809, 1N5811
Possible SMS Replacements for Stud Mount :
1N5812, 1N5814, 1N5816
Voltage/Family
66= 50V
67 = 100V
•
68 = 150V
MAXIMUM RATINGS 3/
RATING
SYMBOL VALUE
UNIT
Peak Repetitive Reverse
Voltage
1N7066
1N7067
1N7068
VRRM
VRWM
VR
50
100
150
Volts
And
DC Blocking Voltage
Average Rectified Forward Current (Axial TL ≤ 55°C; SMS TEC ≤ 100°C ) 5/
IO
Amps
Amps
10
Peak Surge Current
(8.3 ms pulse, half sine wave, superimposed on Io, allow
junction to reach equilibrium between pulses, TA = 25°C)
325
IFSM
TJ and
TSTG
-65 to +175
Operating & Storage Temperature
°C
Junction to Lead for Axial, L =.125"
Junction to End Tab for Surface Mount
RθJL
RθJE
8
4.5
Thermal Resistance
°C/W
NOTES:
1/ For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ IF = 1A, IR = 1A, IRR = 0.1A, TA = 25°C
Axial Leaded
SMS
5/ Operating at higher Io currents may be achieved based on specific application
and device mounting if Tj is maintained below 175ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0119C
DOC
1N7066 thru 1N7068
and
1N7066SMS thru 1N7068SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
VALUE
UNIT
MAX
VF1
VF2
VF3
VF4
VF5
0.900
0.950
1.020
0.85
IF = 6.0 Adc , TA = +25°C, 300μs pulse
IF = 10 Adc , TA = 25°C, 300μs pulse
IF = 20 Adc , TA = 25°C
Instantaneous Forward Voltage Drop
Reverse Leakage Current
Vdc
IF = 6 Adc , TA = 125°C
IF = 6 Adc , TA = -55°C
1.05
μA
mA
IR1
IR2
20
1
Rated VR, TA = +25°C, 300μs pulse minimum
Rated VR, TA =+100°C, 300μs pulse minimum
Junction Capacitance
VR = 10 Vdc, f = 1MHz, TA = 25°C
80
30
CJ
trr
pF
ns
Reverse Recovery Time
IF = 1A, IR = 1A, IRR = 0.1A, TA = 25°C
Package Outlines:
DIMENSIONS (inches)
DIMENSIONS (inches)
DIM.
A
B
C
D
DIM.
A
B
C
D
Minimum
.135
Maximum
.165
Minimum
.172
Maximum
.180
.220
.028
---
.135
.037
1.000
.155
.042
---
.180
.020
.002
AXIAL
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0119C
DOC
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