MBR1045 [SSC]
Schottky Barrier Rectifiers; 肖特基势垒整流器器
| 型号： | MBR1045 |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | Schottky Barrier Rectifiers |
| 文件： | 总3页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10XX SERIES
Schottky Barrier Rectifiers
PRODUCT SUMMARY
Reverse Voltage 35 to 60 Volts
Forward current 10.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
Pb-free; RoHS-compliant
ITO-220AC
TO-220AC
07/28/2007 Rev.1.00
www.SiliconStandard.com
1
MBR10XX SERIES
TO-263AB(D2PAK)
Mounting Pad Layout TO-263AB
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TC=25oC unless otherwise noted)
Parameter
Symbol
MBR1035
MBR1045
MBR1050
MBR1060
Unit
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
Volts
Volts
Volts
Amps
Maximum DC blocking voltage
Maximum average forward rectified current (See Fig. 1)
IF(AV)
10
20
Peak repetitive forward current (sq. wave, 20KHz)
at TC=135oC
IFRM
IFSM
Amps
Amps
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
150
Peak repetitive reverse current at tp = 2.0us, 1KHz
IRRM
1.0
0.5
Amps
Voltage rate of change (rated VR)
dv/dt
10,000
V/us
Maximum instantaneous forward voltage (Note 4)
at IF=10A, TC=25oC
-
0.80
0.70
0.95
0.85
at IF=10A, TC=125oC
VF
0.57
0.84
0.72
Volts
at IF=20A, TC=25oC
at IF=20A, TC=125oC
Maximum instantaneous
reverse current at rated DC
blocking voltage (Note 4)
TC=25oC
0.10
15
mA
IR
TC=125oC
Maximum thermal resistance from junction to case
RθJC
MBR 2.0 / MBRF 4.0 / MBRB 2.0
oC/W
Volts
4500 (Note 1)
3500 (Note 2)
1500 (Note 3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH < 30%
VISOL
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
Notes:
1. Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset
2. Clip mounting (on case), where leads do overlap heatsink
3. Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19")
4. Pulse test: 300us pulse width, 1% duty cycle
07/28/2007 Rev.1.00
www.SiliconStandard.com
2
MBR10XX SERIES
RATINGS AND CHARACTERISTIC CURVES
(TA=25oC unless otherwise noted)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
07/28/2007 Rev.1.00
www.SiliconStandard.com
3
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