2N3906 [SSC]
TRANSISTOR(PNP); 晶体管（ PNP ）
| 型号： | 2N3906 |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | TRANSISTOR(PNP) |
| 文件： | 总4页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3906
TRANSISTOR(PNP)
PRODUCT SUMMARY
TO-92 Plastic-Encapsulate Transistors
TO-92
FEATURES
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
1.EMITTER
2.BASE
3. COLLECTOR
This transistor is also available in the SOT-23 case with
the type designation MMBT3906
1 2 3
MAXIMUM RATINGS (TA=25 oC unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-40
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.2
A
PC
0.625
150
W
℃
℃
TJ
Tstg
Storage Temperature
-55-150
03/17/2008 Rev.1.00
www.SiliconStandard.com
1
2N3906
ELECTRICAL CHARACTERISTICS
(Tamb=25 oC unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-40
-40
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC = -10μA, IE=0
IC =-1mA , IB=0
V
IE= -10μA, IC=0
V
VCB= -40 V,IE=0
VCE= -30 V,VBE(off)=-3V
-0.1
-50
μA
nA
μA
Collector cut-off current
ICEX
Emitter cut-off current
IEBO
VEB= -5 V ,
IC=0
-0.1
400
hFE1
VCE=-1 V, IC= -10mA
VCE=-1 V, IC= -50mA
VCE=-1 V, IC= -100mA
IC= -50mA, IB= -5mA
IC= -50mA, IB= -5mA
100
60
DC current gain
hFE2
hFE3
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
-0.4
V
V
-0.95
V
CE=-20V, IC= -10mA
f = 100MHz
CC=-3V,VBE=-0.5V,
IC=-10mA,IB1=-1mA
CC=-3V,Ic=-10mA
IB1=IB2=-1mA
Transition frequency
fT
250
MHz
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
V
35
35
ns
ns
ns
ns
ts
tf
V
225
75
CLASSIFICATION OF hFE1
Rank
O
Y
G
Range
100-200
200-300
300-400
03/17/2008 Rev.1.00
www.SiliconStandard.com
2
2N3906
TYPICAL CHARACTERISTICS
03/17/2008 Rev.1.00
www.SiliconStandard.com
3
2N3906
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
03/17/2008 Rev.1.00
www.SiliconStandard.com
4
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