1T1G [SSC]
Rectifier Diode,;
| 型号： | 1T1G |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | Rectifier Diode, |
| 文件： | 总2页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1T1G - 1T7G
1A Glass-passivated Miniature Axial-leaded Rectifier
PRODUCT SUMMARY
Voltage range 50 to 1000 Volts
Miniature axial-leaded package, smaller than DO-41
Rated 1.0 Amps at TA=50°C
SS-1
FEATURES
Low forward voltage drop
High surge current capability
High reliability
3mm miniature body
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, matte tin plating
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260°C for 10 seconds with 0.375”,(9.5mm)
lead length at 5 lbs. (2.3kg) tension
Dimensions in inches and (millimeters)
Weight: 0.20 gram
Pb-free, RoHS compliant.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
VRRM
VRMS
VDC
1T1G 1T2G 1T3G 1T4G 1T5G 1T6G 1T7G
Parameter
Units
Maximum recurrent peak reverse voltage
50 100 200 400 600 800 1000
V
V
V
Maximum RMS voltage
35
70 140 280 420 560 700
Maximum DC blocking voltage
50 100 200 400 600 800 1000
Maximum average forward rectified
current with 0.375 (9.5mm) lead length
1.0
A
I(AV)
atTA = 50°C
Peak forward surge current, 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC method )
Maximum instantaneous forward voltage
at 1.0A
30
A
V
IFSM
VF
IR
1.1
1.0
Maximum DC reverse current
at rated DC blocking voltage
at TA=25°C
at TA=125°C
5.0
100
10
uA
uA
pF
°C/W
°C
Typical junction capacitance ( Note 1)
Typical thermal resistance (Note 2)
Operating temperature range
Cj
Rθ JA
TJ
100
-65 to +150
Storage temperature range
TSTG
-65 to +150
°C
Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts D.C.
2. Mounted on a copper pad, size 5mm x 5mm, on a PCB
3/16/2006 Rev.3.01
www.SiliconStandard.com
1 of 2
1T1G - 1T7G
RATINGS AND CHARACTERISTIC CURVES
FIG.1- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.2- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.50
50
1.25
40
1.00
30
.75
10
.50
20
.25
0
0
25
1
50
75
100
125
150
175
2
4
6
8
10
20
40
60 80 100
AMBIENT TEMPERATURE. (oC)
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL JUNCTION CAPACITANCE
FIG.4- TYPICAL FORWARD CHARACTERISTICS
100
10
1.0
1T2G-1T7G
10
1T1G
0.1
.01
1
10
1.0
.4
.6
.8
1.0
1.2
1.4
1.6
0.1
REVERSE VOLTAGE. (V)
FORWARD VOLTAGE. (V)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
3/16/2006 Rev.3.01
www.SiliconStandard.com
2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明