10A01 [SSC]

10A Axial Silicon Rectifier; 10A轴向硅整流
10A01
型号: 10A01
厂家: SILICON STANDARD CORP.    SILICON STANDARD CORP.
描述:

10A Axial Silicon Rectifier
10A轴向硅整流

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中文:  中文翻译
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10A01 - 10A10  
10A Axial Silicon Rectifier  
PRODUCT SUMMARY  
Voltage range 50 to 1000 Volts  
Axial package  
P600  
Rated 10.0 Amps at TA=50°C  
FEATURES  
Low forward voltage drop  
Low reverse leakage current  
High current capability  
High surge-current capability  
MECHANICAL DATA  
Case: molded plastic  
Epoxy: UL 94V-O rated flame retardant  
Lead: axial leads, matte-Sn plated, solderable  
per MIL-STD-202, Method 208 guaranteed  
Polarity: color band denotes cathode end  
High temperature soldering guaranteed:  
260oC for 10 seconds with 0.375” (9.5mm)  
lead lengths  
Dimensions in inches and (millimeters)  
Weight: 2.1 grams  
Pb-free, RoHS compliant.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
10A  
05  
10A  
10  
Parameter  
Units  
10A1 10A2 10A4 10A6 10A8  
Maximum recurrent peak reverse voltage  
50 100 200 400 600 800 1000  
35 70 140 280 420 560 700  
50 100 200 400 600 800 1000  
V
V
V
VRRM  
VRMS  
VDC  
Maximum RMS voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current  
with 0.375" (9.5mm) lead lengths  
at TA = 50°C  
I(AV)  
10.0  
A
Peak forward surge current, 8.3 ms single  
half sine-wave superimposed on rated load  
(JEDEC method )  
IFSM  
600  
1.0  
A
V
Maximum instantaneous forward voltage  
at 10.0A  
VF  
IR  
Maximum DC reverse current  
at rated DC blocking voltage  
at TJ=25°C  
at TJ=100°C  
10  
100  
150  
10  
uA  
uA  
pF  
°C/W  
°C  
Typical junction capacitance  
(Note 1)  
Cj  
Rθ JA  
TJ  
Typical thermal resistance (Note 2)  
Operating temperature range  
Storage temperature range  
-65 to +125  
-65 to +150  
TSTG  
°C  
Notes: 1. Measured at 1 MHz with applied reverse voltage of 4.0 V D.C.  
2. Thermal resistance from junction to ambient  
9/1/2006 Rev.4.01  
www.SiliconStandard.com  
1 of 2  
10A01 - 10A10  
RATINGS AND CHARACTERISTIC CURVES  
FIG.1- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG.2- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
1000  
800  
600  
400  
12  
10  
8
6
4
200  
0
2
o
0
1
2
4
6
8
10  
20  
40  
60 80 100  
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE. (oC)  
NUMBER OF CYCLES AT 60Hz  
FIG.3- TYPICAL JUNCTION CAPACITANCE  
FIG.4- TYPICAL FORWARD CHARACTERISTICS  
1000  
100  
10  
100  
1
10  
1
0.1  
1.6  
1
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
4
10  
FORWARD VOLTAGE. (V)  
REVERSE VOLTAGE. (V)  
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no  
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no  
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its  
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including  
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to  
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of  
Silicon Standard Corporation or any third parties.  
9/1/2006 Rev.4.01  
www.SiliconStandard.com  
2 of 2  

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