AM49DL640AH [SPANSION]
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM; 64兆位(4M ×16位) CMOS 3.0伏只,同时操作闪存和16兆位( 1一M× 16位)伪静态RAM型号: | AM49DL640AH |
厂家: | SPANSION |
描述: | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM |
文件: | 总63页 (文件大小:944K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Am49DL640AH
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that orig-
inally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 26549 Revision B Amendment +1 Issue Date December 12, 2003
THIS PAGE LEFT INTENTIONALLY BLANK.
ADVANCE INFORMATION
Am49DL640AH
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash
Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
DISTINCTIVE CHARACTERISTICS
■ Minimum 1 million erase cycles guaranteed per sector
MCP Features
■ 20 year data retention at 125°C
Reliable operation for the life of the system
■ Power supply voltage of 2.7 to 3.3 volt
—
■ High performance
—
Access time as fast as 55 ns
SOFTWARE FEATURES
■ Package
■ Data Management Software (DMS)
—
73-Ball FBGA
—
AMD-supplied software manages data programming,
enabling EEPROM emulation
■ Operating Temperature
—
Eases historical sector erase flash limitations
—
–40°C to +85°C
■ Supports Common Flash Memory Interface (CFI)
Flash Memory Features
■ Program/Erase Suspend/Erase Resume
—
Suspends program/erase operations to allow
programming/erasing in same bank
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
■ Data# Polling and Toggle Bits
—
Data can be continuously read from one bank while
executing erase/program functions in another bank.
Zero latency between read and write operations
—
Provides a software method of detecting the status of
program or erase cycles
—
■ Unlock Bypass Program command
■ Flexible Bank™ architecture
—
Reduces overall programming time when issuing multiple
program command sequences
—
Read may occur in any of the three banks not being written
or erased.
—
Four banks may be grouped by customer to achieve desired
bank divisions.
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Manufactured on 130 µm process technology
■ Ready/Busy# output (RY/BY#)
■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
—
Hardware method for detecting program or erase cycle
completion
—
Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
■ Hardware reset pin (RESET#)
—
Hardware method of resetting the internal state machine to
the read mode
—
Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
■ WP#/ACC input pin
—
Write protect (WP#) function protects sectors 0, 1, 140, and
141, regardless of sector protect status
■ Zero Power Operation
Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
■ Boot sectors
—
—
Acceleration (ACC) function accelerates program timing
■ Sector protection
—
Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
—
Top and bottom boot sectors in the same device
erase operation within that sector
Temporary Sector Unprotect allows changing data in
protected sectors in-system
■ Compatible with JEDEC standards
—
—
Pinout and software compatible with single-power-supply
flash standard
pSRAM Features
PERFORMANCE CHARACTERISTICS
■ Power dissipation
■ High performance
—
—
Operating: 20 mA maximum
Standby: 70 µA maximum
—
—
Access time as fast as 55 ns
Program time: 4 µs/word typical utilizing Accelerate function
■ CE1s# and CE2s Chip Select
■ Ultra low power consumption (typical values)
—
—
—
2 mA active read current at 1 MHz
10 mA active read current at 5 MHz
200 nA in standby or automatic sleep mode
■ Power down features using CE1s# and CE2s
■ Data retention supply voltage: 2.7 to 3.3 volt
■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
Publication# 26549 Rev: B Amendment/+1
Issue Date: December 12, 2003
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice. 12/15/03
Refer to AMD’s Website (www.amd.com) for the latest information.
A D V A N C E I N F O R M A T I O N
GENERAL DESCRIPTION
Am29DL640H Features
The Am29DL640H is a 64 megabit, 3.0 volt-only flash
memory device, organized as 4,194,304 words of 16
bits each. Word mode data appears on DQ15–DQ0;
byte mode data appears on DQ7–DQ0. The device is
designed to be programmed in-system with the stan-
dard 3.0 volt VCC supply, and can also be programmed
in standard EPROM programmers.
ESN (Electronic Serial Number), customer code (pro-
grammed through AMD’s ExpressFlash service), or
both. Customer Lockable parts may utilize the SecSi
Sector as a bonus space, reading and writing like any
other flash sector, or may permanently lock their own
code there.
DMS (Data Management Software) allows systems
to easily take advantage of the advanced architecture
of the simultaneous read/write product line by allowing
removal of EEPROM devices. DMS will also allow the
system software to be simplified, as it will perform all
functions necessary to modify data in file structures,
as opposed to single-byte modifications. To write or
update a particular piece of data (a phone number or
configuration data, for example), the user only needs
to state which piece of data is to be updated, and
where the updated data is located in the system. This
is an advantage compared to systems where
user-written software must keep track of the old data
location, status, logical to physical translation of the
data onto the Flash memory device (or memory de-
vices), and more. Using DMS, user-written software
does not need to interface with the Flash memory di-
rectly. Instead, the user's software accesses the Flash
memory by calling one of only six functions. AMD pro-
vides this software to simplify system design and soft-
ware integration efforts.
The device is available with an access time of 55, 70
or 85 ns and is offered in a 73-ball FBGA package.
Standard control pins—chip enable (CE#f), write en-
able (WE#), and output enable (OE#)—control normal
read and write operations, and avoid bus contention
issues.
The device requires only a single 3.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into four banks, two 8 Mb banks with small and
large sectors, and two 24 Mb banks of large sectors
only. Sector addresses are fixed, system software can
be used to form user-defined bank groups.
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
During an Erase/Program operation, any of the three
non-busy banks may be read from. Note that only two
banks can operate simultaneously. The device can im-
prove overall system performance by allowing a host
system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system from
waiting for the completion of program or erase
operations.
The host system can detect whether a program or
erase operation is complete by using the device sta-
tus bits: RY/BY# pin, DQ7 (Data# Polling) and
DQ6/DQ2 (toggle bits). After a program or erase cycle
has been completed, the device automatically returns
to the read mode.
The Am29DL640H can be organized as both a top and
bottom boot sector configuration.
The sector erase architecture allows memory sec-
tors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Bank
Megabits
Sector Sizes
Eight 4 Kword,
Fifteen 32 Kword
Bank 1
8 Mb
Bank 2
Bank 3
24 Mb
24 Mb
Forty-eight 32 Kword
Forty-eight32 Kword
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved in-system or via program-
ming equipment.
Eight 4 Kword,
Fifteen 32 Kword
Bank 4
8 Mb
The SecSiTM (Secured Silicon) Sector is an extra 256
byte sector capable of being permanently locked by
AMD or customers. The SecSi Customer Indicator Bit
(DQ6) is permanently set to 1 if the part has been cus-
tomer locked, permanently set to 0 if the part has been
factory locked, and is 0 if customer lockable. This way,
customer lockable parts can never be used to replace
a factory locked part.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly re-
duced in both modes.
Factory locked parts provide several options. The
SecSi Sector may store a secure, random 16 byte
2
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
MCP Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . 5
Flash Memory Block Diagram. . . . . . . . . . . . . . . . 6
Connection Diagram . . . . . . . . . . . . . . . . . . . . . . . 7
Special Package Handling Instructions .................................... 7
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 9
MCP Device Bus Operations. . . . . . . . . . . . . . . . . 9
Table 1. Device Bus Operations—Flash Word Mode, CIOf =
VIH ....................................................................................... 10
Table 2. Device Bus Operations—Flash Byte Mode .......................11
Flash Device Bus Operations . . . . . . . . . . . . . . . 12
Requirements for Reading Array Data ................................... 12
Writing Commands/Command Sequences ............................ 12
Accelerated Program Operation ............................................. 12
Autoselect Functions .............................................................. 12
Simultaneous Read/Write Operations with Zero Latency ....... 12
Standby Mode ........................................................................ 12
Automatic Sleep Mode ........................................................... 13
RESET#: Hardware Reset Pin ............................................... 13
Output Disable Mode .............................................................. 13
Table 3. Am29DL640H Sector Architecture ....................................14
Table 4. Bank Address ....................................................................16
Erase Suspend/Erase Resume Commands ........................... 28
Figure 5. Erase Operation.............................................................. 28
Table 12. Am29DL640H Command Definitions................... 29
Flash Write Operation Status. . . . . . . . . . . . . . . . 30
DQ7: Data# Polling ................................................................. 30
Figure 6. Data# Polling Algorithm .................................................. 30
RY/BY#: Ready/Busy#............................................................ 31
DQ6: Toggle Bit I .................................................................... 31
Figure 7. Toggle Bit Algorithm........................................................ 31
DQ2: Toggle Bit II ................................................................... 32
Reading Toggle Bits DQ6/DQ2 ............................................... 32
DQ5: Exceeded Timing Limits ................................................ 32
DQ3: Sector Erase Timer ....................................................... 32
Table 13. Write Operation Status ................................................... 33
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 34
Figure 8. Maximum Negative Overshoot Waveform ...................... 34
Figure 9. Maximum Positive Overshoot Waveform........................ 34
Flash DC Characteristics . . . . . . . . . . . . . . . . . . . 35
CMOS Compatible .................................................................. 35
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents)............................................................. 36
Figure 11. Typical ICC1 vs. Frequency............................................ 36
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 12. Test Setup.................................................................... 38
Figure 13. Input Waveforms and Measurement Levels ................. 38
pSRAM AC Characteristics . . . . . . . . . . . . . . . . . 39
Table 5. SecSi
™ Sector Addresses ...............................................16
Sector/Sector Block Protection and Unprotection .................. 17
Table 6. Am29DL640H Boot Sector/Sector Block
CE#1ps Timing ....................................................................... 39
Figure 14. Timing Diagram for Alternating
Addresses for Protection/Unprotection ...........................................17
Write Protect (WP#) ................................................................ 18
Table 7. WP#/ACC Modes ..............................................................18
Temporary Sector Unprotect .................................................. 18
Figure 1. Temporary Sector Unprotect Operation........................... 18
Figure 2. In-System Sector Protect/Unprotect Algorithms .............. 19
SecSi™ (Secured Silicon) Sector
Between Pseudo SRAM and Flash................................................ 39
Read-Only Operations ........................................................... 40
Figure 15. Read Operation Timings............................................... 40
Hardware Reset (RESET#) .................................................... 41
Figure 16. Reset Timings............................................................... 41
Word Configuration (CIOf) ...................................................... 42
Figure 17. CIOf Timings for Read Operations................................ 42
Figure 18. CIOf Timings for Write Operations................................ 42
Erase and Program Operations .............................................. 43
Figure 19. Program Operation Timings.......................................... 44
Figure 20. Accelerated Program Timing Diagram.......................... 44
Figure 21. Chip/Sector Erase Operation Timings .......................... 45
Figure 22. Back-to-back Read/Write Cycle Timings ...................... 46
Figure 23. Data# Polling Timings (During Embedded Algorithms). 46
Figure 24. Toggle Bit Timings (During Embedded Algorithms)...... 47
Figure 25. DQ2 vs. DQ6................................................................. 47
Temporary Sector Unprotect .................................................. 48
Figure 26. Temporary Sector Unprotect Timing Diagram .............. 48
Figure 27. Sector/Sector Block Protect and
Unprotect Timing Diagram ............................................................. 49
Alternate CE#f Controlled Erase and Program Operations .... 50
Figure 28. Flash Alternate CE#f Controlled Write (Erase/Program)
Operation Timings.......................................................................... 51
Pseudo SRAM AC Characteristics . . . . . . . . . . . 52
Power Up Time ....................................................................... 52
Read Cycle ............................................................................. 52
Figure 29. Pseudo SRAM Read Cycle—Address Controlled......... 52
Figure 30. Pseudo SRAM Read Cycle........................................... 53
Write Cycle ............................................................................. 54
Figure 31. Pseudo SRAM Write Cycle—WE# Control ................... 54
Figure 32. Pseudo SRAM Write Cycle—CE1#s Control................ 55
Flash Memory Region ............................................................ 20
Figure 3. SecSi Sector Protect Verify.............................................. 21
Hardware Data Protection ...................................................... 21
Low VCC Write Inhibit .............................................................. 21
Write Pulse “Glitch” Protection ............................................... 21
Logical Inhibit .......................................................................... 21
Power-Up Write Inhibit ............................................................ 21
Common Flash Memory Interface (CFI). . . . . . . 21
Table 8. CFI Query Identification String .............................. 22
Table 9. System Interface String......................................................22
Table 10. Device Geometry Definition................................. 23
Table 11. Primary Vendor-Specific Extended Query........... 24
Flash Command Definitions . . . . . . . . . . . . . . . . 25
Reading Array Data ................................................................ 25
Reset Command ..................................................................... 25
Autoselect Command Sequence ............................................ 25
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence .............................................................. 25
Word Program Command Sequence ..................................... 26
Unlock Bypass Command Sequence ..................................... 26
Figure 4. Program Operation .......................................................... 27
Chip Erase Command Sequence ........................................... 27
Sector Erase Command Sequence ........................................ 27
December 12, 2003
Am49DL640AH
3
A D V A N C E I N F O R M A T I O N
Figure 33. Pseudo SRAM Write Cycle—
Flash Data Retention . . . . . . . . . . . . . . . . . . . . . . 57
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 58
FLJ073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm .............. 58
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 59
UB#s and LB#s Control................................................................... 56
Flash Erase And Programming Performance . . 57
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 57
Package Pin Capacitance . . . . . . . . . . . . . . . . . . 57
4
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
PRODUCT SELECTOR GUIDE
Part Number
Am49DL640AH
Flash Memory
pSRAM
Speed
Options
Standard Voltage Range:
VCC = 2.7–3.3 V
56
55
55
25
70
70
70
30
85
85
85
40
56, 70, 85
Max Access Time (ns)
CE#f Access (ns)
OE# Access (ns)
70
70
35
MCP BLOCK DIAGRAM
VCC
f
VSS
A21 to A0
RY/BY#
A21 to A0
WP#/ACC
RESET#
CE#f
64 MBit
Flash Memory
DQ15 to DQ0
DQ15 to DQ0
VCCs/VCCQ VSS/VSSQ
A19 to A0
16 MBit
Pseudo SRAM
LB#s
DQ15 to DQ0
UB#s
WE#
OE#
CE1#s
CE2s
December 12, 2003
Am49DL640AH
5
A D V A N C E I N F O R M A T I O N
FLASH MEMORY BLOCK DIAGRAM
V
V
CC
OE# BYTE#
SS
Mux
Bank 1
Bank 1 Address
A21–A0
X-Decoder
Bank 2 Address
RY/BY#
Bank 2
X-Decoder
A21–A0
RESET#
STATE
CONTROL
&
COMMAND
REGISTER
Status
WE#
CE#
DQ15–DQ0
Control
Mux
WP#/ACC
DQ15–DQ0
X-Decoder
Bank 3
Bank 3 Address
Bank 4 Address
X-Decoder
Bank 4
A21–A0
Mux
6
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
CONNECTION DIAGRAM
73-Ball FBGA
Top View
Flash only
A1
A10
NC
NC
pSRAM only
B1
B5
NC
C5
B6
B10
NC
NC
NC
Shared
C1
C3
C4
C6
C7
C8
NC
A7
LB# WP#/ACC WE#
A8
A11
D2
A3
D3
A6
D4
D5
D6
D7
A19
E7
A9
D8
A12
E8
A13
F8
D9
A15
E9
A21
F9
NC
UB# RESET# CE2s
E5
E2
A2
E3
A5
E4
E6
A18 RY/BY# A20
F1
NC
G1
NC
F2
A1
F3
A4
F4
A17
G4
DQ1
F7
F10
A10
G7
DQ6
H7
A14
G8
NC
NC
G2
A0
G3
G9 G10
V
SS
A16
H9
NC
J9
NC
H2
CE#f
J2
H3
OE#
J3
H4
DQ9
J4
H5
DQ3
J5
H6
DQ4
J6
H8
DQ13 DQ15
J7
DQ12
K7
J8
DQ7
K8
V
CC
f
V
s
CC
CE1#s DQ0
DQ10
K4
V
SS
K3
K5
DQ11
L5
K6
NC
L6
NC
DQ8
DQ2
DQ5
DQ14
L1
NC
M1
NC
L10
NC
NC
M10
NC
The package and/or data integrity may be compromised
if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Special Package Handling Instructions
Special handling is required for Flash Memory products
in molded packages (TSOP, BGA, PDIP, SSOP, PLCC).
December 12, 2003
Am49DL640AH
7
A D V A N C E I N F O R M A T I O N
PIN DESCRIPTION
LOGIC SYMBOL
A19–A0
A21–A20
DQ15–DQ0
CE#f
= 20 Address Inputs (Common)
19
= 2 Address Inputs (Flash)
A19–A0
= 16 Data Inputs/Outputs (Common)
= Chip Enable (Flash)
A21–A20
CE#f
CE#1s
CE2s
= Chip Enable 1 (pSRAM)
= Chip Enable 2 (pSRAM)
= Output Enable (Common)
= Write Enable (Common)
= Ready/Busy Output
16 or 8
CE1#s
CE2s
DQ15–DQ0
RY/BY#
OE#
WE#
OE#
RY/BY#
UB#s
WE#
= Upper Byte Control (pSRAM)
= Lower Byte Control (pSRAM)
= Hardware Reset Pin, Active Low
WP#/ACC
RESET#
UB#s
LB#s
RESET#
WP#/ACC
= Hardware Write Protect/
Acceleration Pin (Flash)
LB#s
VCC
f
= Flash 3.0 volt-only single power sup-
ply (see Product Selector Guide for
speed options and voltage supply
tolerances)
VCC
VSS
NC
s
= pSRAM Power Supply
= Device Ground (Common)
= Pin Not Connected Internally
8
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
ORDERING INFORMATION
The order number (Valid Combination) is formed by the following:
Am49DL640 70
A
H
I
T
TAPE AND REEL
T
S
=
=
7 inches
13 inches
TEMPERATURE RANGE
Industrial (–40°C to +85°C)
I
=
SPEED OPTION
See Product Selector Guide and Valid Combinations
PROCESS TECHNOLOGY
H
=
130 µm floating-gate technology
pSRAM DEVICE DENSITY
16 Mbits
A
=
AMD DEVICE NUMBER/DESCRIPTION
Am49DL640AH
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL640H 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash
Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
Valid Combinations
Valid Combinations
Order Number Package Marking
Am49DL640AH56I
Valid Combinations list configurations planned to be supported in vol-
ume for this device. Consult the local AMD or Fujitsu sales office to
confirm availability of specific valid combinations and to check on
newly released combinations.
M49000003J
M49000003D
M49000003E
Am49DL640AH70I
Am49DL640AH85I
T, S
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device. Tables 1-2 lists the device bus operations, the
inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
MCP DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
December 12, 2003
Am49DL640AH
9
A D V A N C E I N F O R M A T I O N
Table 1. Device Bus Operations—Flash Word Mode, CIOf = VIH
Operation
(Notes 1, 2)
WP#/ACC DQ7– DQ15–
CE#f CE1#s CE2s OE# WE# Addr. LB#s UB#s RESET#
(Note 4)
DQ0
DQ8
H
X
H
X
H
X
X
L
X
L
X
L
Read from Flash
Write to Flash
Standby
L
L
L
H
X
H
L
AIN
AIN
X
X
X
X
X
X
X
H
H
L/H
DOUT
DOUT
(Note 4)
H
DIN
DIN
VCC
0.3 V
VCC
0.3 V
X
High-Z High-Z
High-Z High-Z
High-Z High-Z
H
H
H
H
X
X
L
X
L
Output Disable
L
L
H
H
L
L/H
X
H
X
H
X
L
Flash Hardware
Reset
X
X
X
X
X
X
X
L/H
X
SADD,
A6 = L,
A1 = H,
A0 = L
Sector Protect
(Note 5)
L
H
L
X
VID
L/H
DIN
X
X
X
H
X
L
X
L
SADD,
A6 = H,
A1 = H,
A0 = L
Sector Unprotect
(Note 5)
L
X
H
H
X
L
L
X
H
X
X
X
X
VID
VID
H
(Note 6)
(Note 6)
X
DIN
H
X
X
L
Temporary Sector
Unprotect
X
DIN
High-Z
DOUT
L
H
L
L
L
DOUT
Read from pSRAM
Write to pSRAM
L
L
H
H
AIN
High-Z DOUT
DOUT High-Z
H
L
L
DIN
High-Z
DIN
DIN
DIN
H
X
L
AIN
H
L
L
H
X
H
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 0.5 V, X = Don’t Care, SADD = Flash Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out, pSRAM = Pseudo SRAM
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL, the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
10
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Table 2. Device Bus Operations—Flash Byte Mode
Operation
(Notes 1, 2)
LB#s
(Note 3) (Note 3)
UB#s
WP#/ACC DQ7– DQ15–
CE#f CE1#s CE2s OE# WE# Addr.
RESET#
(Note 4)
DQ0
DQ8
H
X
H
X
H
X
X
L
X
L
X
L
Read from Flash
Write to Flash
Standby
L
L
L
H
X
H
X
H
L
AIN
AIN
X
X
X
X
X
X
X
H
L/H
DOUT
High-Z
H
(Note 3)
H
DIN
High-Z
VCC
0.3 V
VCC
0.3 V
X
H
X
High-Z High-Z
High-Z High-Z
High-Z High-Z
L
X
L
Output Disable
L
L
H
X
H
L
L/H
X
H
X
H
X
L
Flash Hardware
Reset
X
X
X
X
X
L/H
X
SADD,
A6 = L,
A1 = H,
A0 = L
Sector Protect
(Note 5)
L
H
L
X
VID
L/H
DIN
X
X
H
X
L
X
L
SADD,
A6 = L,
A1 = H,
A0 = L
Sector
Unprotect
(Note 5)
L
X
H
H
X
L
L
X
H
X
X
X
X
VID
VID
H
(Note 6)
(Note 6)
X
DIN
X
Temporary
Sector
Unprotect
H
X
x
AIN
DIN
High-Z
L
L
H
L
L
L
DOUT
High-Z
DOUT
DIN
DOUT
DOUT
High-Z
DIN
Read from
pSRAM
L
L
H
H
AIN
H
L
L
Write to pSRAM
H
X
L
AIN
H
L
L
H
X
High-Z
DIN
DIN
H
High-Z
Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 11.5–12.5 V, VHH = 9.0 0.5 V, X = Don’t Care, SADD = Flash Sector
Address, AIN = Address In, DIN = Data In, DOUT = Data Out, pSRAM = Pseudo SRAM
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#f = VIL, CE1#s = VIL and CE2s = VIH at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = VIL, the boot sectors will be protected. If WP#/ACC = VIH the boot sectors protection will be removed.
If WP#/ACC = VACC (9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = VHH, all sectors will be unprotected.
December 12, 2003
Am49DL640AH
11
A D V A N C E I N F O R M A T I O N
FLASH DEVICE BUS OPERATIONS
AC Characteristics section contains timing specifica-
tion tables and timing diagrams for write operations.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE#f and OE# pins to VIL. CE#f is the power
control and selects the device. OE# is the output con-
trol and gates array data to the output pins. WE#
should remain at VIH. The CIOf pin determines
whether the device outputs array data in words or
bytes.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the WP#/ACC pin. This function is prima-
rily intended to allow faster manufacturing throughput
at the factory.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No com-
mand is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. Each bank remains
enabled for read access until the command register
contents are altered.
If the system asserts VHH on this pin, the device auto-
matically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the WP#/ACC pin returns the device to nor-
mal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated pro-
gramming, or device damage may result. In addition,
the WP#/ACC pin must not be left floating or uncon-
nected; inconsistent behavior of the device may result.
See “Write Protect (WP#)” on page 18 for related infor-
mation.
Refer to the AC Read-Only Operations table for timing
specifications and to Figure 15 for the timing diagram.
ICC1 in the DC Characteristics table represents the ac-
tive current specification for reading array data.
Writing Commands/Command Sequences
Autoselect Functions
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE#f to VIL, and OE# to VIH.
If the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ15–DQ0. Standard read cycle timings apply in
this mode. Refer to the Sector/Sector Block Protection
and Unprotection and Autoselect Command Se-
quence sections for more information.
For program operations, the CIOf pin determines
whether the device accepts program data in bytes or
words. Refer to “Requirements for Reading Array
Data” for more information.
The device features an Unlock Bypass mode to facili-
tate faster programming. Once a bank enters the Un-
lock Bypass mode, only two write cycles are required
to program a word or byte, instead of four. The “Word
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the other
bank of memory. An erase operation may also be sus-
pended to read from or program to another location
within the same bank (except the sector being
erased). Figure 22 shows how read and write cycles
may be initiated for simultaneous operation with zero
latency. ICC6f and ICC7f in the table represent the cur-
rent specifications for read-while-program and
read-while-erase, respectively.
An erase operation can erase one sector, multiple sec-
tors, or the entire device. Table 3 indicates the address
space that each sector occupies. Similarly, a “sector
address” is the address bits required to uniquely select
a sector. The “Flash Command Definitions” section
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.
Standby Mode
The device address space is divided into four banks. A
“bank address” is the address bits required to uniquely
select a bank.
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
ICC2 in the DC Characteristics table represents the ac-
tive current specification for the write mode. The Flash
12
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
The device enters the CMOS standby mode when the
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is
ready to accept another command sequence, to en-
sure data integrity.
CE#f and RESET# pins are both held at VCC 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE#f and RESET# are held at VIH, but not
within VCC 0.3 V, the device will be in the standby
mode, but the standby current will be greater. The de-
vice requires standard access time (tCE) for read ac-
cess when the device is in either of these standby
modes, before it is ready to read data.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS 0.3 V, the device
draws CMOS standby current (ICC4f). If RESET# is
held at VIL but not within VSS 0.3 V, the standby cur-
rent will be greater.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
ICC3f in the table represents the standby current spec-
ification.
If RESET# is asserted during a program or erase op-
eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The sys-
tem can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algo-
rithms). The system can read data tRH after the RE-
SET# pin returns to VIH.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device en-
ergy consumption. The device automatically enables
this mode when addresses remain stable for tACC
+
30 ns. The automatic sleep mode is independent of
the CE#f, WE#, and OE# control signals. Standard ad-
dress access timings provide new data when ad-
dresses are changed. While in sleep mode, output
data is latched and always available to the system.
ICC5f in the table represents the automatic sleep mode
current specification.
Refer to the pSRAM AC Characteristics tables for RE-
SET# parameters and to Figure 16 for the timing dia-
gram.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of re-
setting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high
impedance state.
December 12, 2003
Am49DL640AH
13
A D V A N C E I N F O R M A T I O N
Table 3. Am29DL640H Sector Architecture
Sector Address
A21–A12
Sector Size
(Kwords)
(x16)
Address Range
Bank
Sector
SA0
SA1
0000000000
0000000001
0000000010
0000000011
0000000100
0000000101
0000000110
0000000111
0000001xxx
0000010xxx
0000011xxx
0000100xxx
0000101xxx
0000110xxx
0000111xxx
0001000xxx
0001001xxx
0001010xxx
0001011xxx
0001100xxx
0001101xxx
0001101xxx
0001111xxx
0010000xxx
0010001xxx
0010010xxx
0010011xxx
0010100xxx
0010101xxx
0010110xxx
0010111xxx
0011000xxx
0011001xxx
0011010xxx
0011011xxx
0011000xxx
0011101xxx
0011110xxx
0011111xxx
0100000xxx
0100001xxx
0100010xxx
0101011xxx
0100100xxx
0100101xxx
0100110xxx
0100111xxx
0101000xxx
0101001xxx
0101010xxx
0101011xxx
0101100xxx
4
00000h–00FFFh
01000h–01FFFh
02000h–02FFFh
03000h–03FFFh
04000h–04FFFh
05000h–05FFFh
06000h–06FFFh
07000h–07FFFh
08000h–0FFFFh
10000h–17FFFh
18000h–1FFFFh
20000h–27FFFh
28000h–2FFFFh
30000h–37FFFh
38000h–3FFFFh
40000h–47FFFh
48000h–4FFFFh
50000h–57FFFh
58000h–5FFFFh
60000h–67FFFh
68000h–6FFFFh
70000h–77FFFh
78000h–7FFFFh
80000h–87FFFh
88000h–8FFFFh
90000h–97FFFh
98000h–9FFFFh
A0000h–A7FFFh
A8000h–AFFFFh
B0000h–B7FFFh
B8000h–BFFFFh
C0000h–C7FFFh
C8000h–CFFFFh
D0000h–D7FFFh
D8000h–DFFFFh
E0000h–E7FFFh
E8000h–EFFFFh
F0000h–F7FFFh
F8000h–FFFFFh
F9000h–107FFFh
108000h–10FFFFh
110000h–117FFFh
118000h–11FFFFh
120000h–127FFFh
128000h–12FFFFh
130000h–137FFFh
138000h–13FFFFh
140000h–147FFFh
148000h–14FFFFh
150000h–157FFFh
158000h–15FFFFh
160000h–167FFFh
4
SA2
4
SA3
4
SA4
4
SA5
4
SA6
4
SA7
4
SA8
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
SA35
SA36
SA37
SA38
SA39
SA40
SA41
SA42
SA43
SA44
SA45
SA46
SA47
SA48
SA49
SA50
SA51
Bank 1
Bank 2
14
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Table 3. Am29DL640H Sector Architecture (Continued)
Sector Address
A21–A12
Sector Size
(Kwords)
(x16)
Address Range
Bank
Sector
SA52
SA53
SA54
SA55
SA56
SA57
SA58
SA59
SA60
SA61
SA62
SA63
SA64
SA65
SA66
SA67
SA68
SA69
SA70
SA71
SA72
SA73
SA74
SA75
SA76
SA77
SA78
SA79
SA80
SA81
SA82
SA83
SA84
SA85
SA86
SA87
SA88
SA89
SA90
SA91
SA92
SA93
SA94
SA95
SA96
SA97
SA98
SA99
SA100
SA101
SA102
SA103
SA104
0101101xxx
0101110xxx
0101111xxx
0110000xxx
0110001xxx
0110010xxx
0110011xxx
0100100xxx
0110101xxx
0110110xxx
0110111xxx
0111000xxx
0111001xxx
0111010xxx
0111011xxx
0111100xxx
0111101xxx
0111110xxx
0111111xxx
1000000xxx
1000001xxx
1000010xxx
1000011xxx
1000100xxx
1000101xxx
1000110xxx
1000111xxx
1001000xxx
1001001xxx
1001010xxx
1001011xxx
1001100xxx
1001101xxx
1001110xxx
1001111xxx
1010000xxx
1010001xxx
1010010xxx
1010011xxx
1010100xxx
1010101xxx
1010110xxx
1010111xxx
1011000xxx
1011001xxx
1011010xxx
1011011xxx
1011100xxx
1011101xxx
1011110xxx
1011111xxx
1100000xxx
1100001xxx
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
168000h–16FFFFh
170000h–177FFFh
178000h–17FFFFh
180000h–187FFFh
188000h–18FFFFh
190000h–197FFFh
198000h–19FFFFh
1A0000h–1A7FFFh
1A8000h–1AFFFFh
1B0000h–1B7FFFh
1B8000h–1BFFFFh
1C0000h–1C7FFFh
1C8000h–1CFFFFh
1D0000h–1D7FFFh
1D8000h–1DFFFFh
1E0000h–1E7FFFh
1E8000h–1EFFFFh
1F0000h–1F7FFFh
1F8000h–1FFFFFh
200000h–207FFFh
208000h–20FFFFh
210000h–217FFFh
218000h–21FFFFh
220000h–227FFFh
228000h–22FFFFh
230000h–237FFFh
238000h–23FFFFh
240000h–247FFFh
248000h–24FFFFh
250000h–257FFFh
258000h–25FFFFh
260000h–267FFFh
268000h–26FFFFh
270000h–277FFFh
278000h–27FFFFh
280000h–28FFFFh
288000h–28FFFFh
290000h–297FFFh
298000h–29FFFFh
2A0000h–2A7FFFh
2A8000h–2AFFFFh
2B0000h–2B7FFFh
2B8000h–2BFFFFh
2C0000h–2C7FFFh
2C8000h–2CFFFFh
2D0000h–2D7FFFh
2D8000h–2DFFFFh
2E0000h–2E7FFFh
2E8000h–2EFFFFh
2F0000h–2FFFFFh
2F8000h–2FFFFFh
300000h–307FFFh
308000h–30FFFFh
Bank 2
Bank 3
December 12, 2003
Am49DL640AH
15
A D V A N C E I N F O R M A T I O N
Table 3. Am29DL640H Sector Architecture (Continued)
Sector Address
A21–A12
Sector Size
(Kwords)
(x16)
Address Range
Bank
Sector
SA105
SA106
SA107
SA108
SA109
SA110
SA111
SA112
SA113
SA114
SA115
SA116
SA117
SA118
SA119
SA120
SA121
SA122
SA123
SA124
SA125
SA126
SA127
SA128
SA129
SA130
SA131
SA132
SA133
SA134
SA135
SA136
SA137
SA138
SA139
SA140
SA141
1100010xxx
1100011xxx
1100100xxx
1100101xxx
1100110xxx
1100111xxx
1101000xxx
1101001xxx
1101010xxx
1101011xxx
1101100xxx
1101101xxx
1101110xxx
1101111xxx
1110000xxx
1110001xxx
1110010xxx
1110011xxx
1110100xxx
1110101xxx
1110110xxx
1110111xxx
1111000xxx
1111001xxx
1111010xxx
1111011xxx
1111100xxx
1111101xxx
1111110xxx
1111111000
1111111001
1111111010
1111111011
1111111100
1111111101
1111111110
1111111111
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
32
4
310000h–317FFFh
318000h–31FFFFh
320000h–327FFFh
328000h–32FFFFh
330000h–337FFFh
338000h–33FFFFh
340000h–347FFFh
348000h–34FFFFh
350000h–357FFFh
358000h–35FFFFh
360000h–367FFFh
368000h–36FFFFh
370000h–377FFFh
378000h–37FFFFh
380000h–387FFFh
388000h–38FFFFh
390000h–397FFFh
398000h–39FFFFh
3A0000h–3A7FFFh
3A8000h–3AFFFFh
3B0000h–3B7FFFh
3B8000h–3BFFFFh
3C0000h–3C7FFFh
3C8000h–3CFFFFh
3D0000h–3D7FFFh
3D8000h–3DFFFFh
3E0000h–3E7FFFh
3E8000h–3EFFFFh
3F0000h–3F7FFFh
3F8000h–3F8FFFh
3F9000h–3F9FFFh
3FA000h–3FAFFFh
3FB000h–3FBFFFh
3FC000h–3FCFFFh
3FD000h–3FDFFFh
3FE000h–3FEFFFh
3FF000h–3FFFFFh
Bank 3
Bank 4
4
4
4
4
4
4
4
Note: The address range is A21:A0 in word mode.
Table 4. Bank Address
Bank
A21–A19
000
1
2
3
4
001, 010, 011
100, 101, 110
111
Table 5. SecSi™ Sector Addresses
(x16)
Device
Sector Size
Address Range
Am29DL640H
256 bytes
00000h–0007Fh
16
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Sector/Sector Block Protection and
Unprotection
Sector/
Sector Block Size
Sector
A21–A12
SA63–SA66
SA67–SA70
SA71–SA74
SA75–SA78
SA79–SA82
SA83–SA86
SA87–SA90
SA91–SA94
SA95–SA98
SA99–SA102
SA103–SA106
SA107–SA110
SA111–SA114
SA115–SA118
SA119–SA122
SA123–SA126
SA127–SA130
01110XXXXX
01111XXXXX
10000XXXXX
10001XXXXX
10010XXXXX
10011XXXXX
10100XXXXX
10101XXXXX
10110XXXXX
10111XXXXX
11000XXXXX
11001XXXXX
11010XXXXX
11011XXXXX
11100XXXXX
11101XXXXX
11110XXXXX
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
6).
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both pro-
gram and erase operations in previously protected
sectors. Sector protection/unprotection can be imple-
mented via two methods.
Table 6. Am29DL640H Boot Sector/Sector Block
Addresses for Protection/Unprotection
Sector/
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
A21–A12
Sector Block Size
0000000000
0000000001
0000000010
0000000011
0000000100
0000000101
0000000110
0000000111
8 Kbytes
8 Kbytes
1111100XXX,
1111101XXX,
1111110XXX
8 Kbytes
SA131–SA133
192 (3x64) Kbytes
8 Kbytes
8 Kbytes
SA134
SA135
SA136
SA137
SA138
SA139
SA140
SA141
1111111000
1111111001
1111111010
1111111011
1111111100
1111111101
1111111110
1111111111
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
8 Kbytes
0000001XXX,
0000010XXX,
0000011XXX,
SA8–SA10
192 (3x64) Kbytes
SA11–SA14
SA15–SA18
SA19–SA22
SA23–SA26
SA27-SA30
SA31-SA34
SA35-SA38
SA39-SA42
SA43-SA46
SA47-SA50
SA51-SA54
SA55–SA58
SA59–SA62
00001XXXXX
00010XXXXX
00011XXXXX
00100XXXXX
00101XXXXX
00110XXXXX
00111XXXXX
01000XXXXX
01001XXXXX
01010XXXXX
01011XXXXX
01100XXXXX
01101XXXXX
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
256 (4x64) Kbytes
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algo-
rithms and Figure 27 shows the timing diagram. This
method uses standard microprocessor bus cycle tim-
ing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unprotect
write cycle. Note that the sector unprotect algorithm
unprotects all sectors in parallel. All previously pro-
tected sectors must be individually re-protected. To
change data in protected sectors efficiently, the tem-
porary sector unprotect function is available. See
“Temporary Sector Unprotect”.
December 12, 2003
Am49DL640AH
17
A D V A N C E I N F O R M A T I O N
The alternate method intended only for programming
Temporary Sector Unprotect
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices.
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
6).
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
SET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RE-
SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 26 shows the timing diagrams, for this feature.
If the WP#/ACC pin is at VIL, sectors 0, 1, 140, and
141 will remain protected during the Temporary sector
Unprotect mode.
It is possible to determine whether a sector is pro-
tected or unprotected. See the Sector/Sector Block
Protection and Unprotection section for details.
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting without using VID. This function is
one of two provided by the WP#/ACC pin.
If the system asserts VIL on the WP#/ACC pin, the de-
vice disables program and erase functions in sectors
0, 1, 140, and 141, independently of whether those
sectors were protected or unprotected using the
method described in “Sector/Sector Block Protection
and Unprotection”.
START
If the system asserts VIH on the WP#/ACC pin, the de-
vice reverts to whether sectors 0, 1, 140, and 141
were last set to be protected or unprotected. That is,
sector protection or unprotection for these sectors de-
pends on whether they were last protected or unpro-
tected using the method described in “Sector/Sector
Block Protection and Unprotection”.
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
Note that the WP#/ACC pin must not be left floating or
unconnected; inconsistent behavior of the device may
result.
RESET# = VIH
Table 7. WP#/ACC Modes
Temporary Sector
Unprotect Completed
(Note 2)
Device
Mode
WP# Input
Voltage
Disables programming and erasing in
SA0, SA1, SA140, and SA141
VIL
VIH
Enables programming and erasing in
SA0, SA1, SA140, and SA141
Notes:
1. All protected sectors unprotected (If WP#/ACC = VIL,
sectors 0, 1, 140, and 141 will remain protected).
Enables accelerated programming
(ACC). See “Accelerated Program
Operation” on page 12.
VHH
2. All previously protected sectors are protected once
again.
Figure 1. Temporary Sector Unprotect Operation
18
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
START
START
Protect all sectors:
PLSCNT = 1
PLSCNT = 1
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
RESET# = VID
RESET# = VID
Wait 1 µs
Wait 1 µs
unprotect address
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
Data = 01h?
Yes
A1 = 1, A0 = 0
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
Sector Unprotect
Algorithm
from RESET#
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/Unprotect Algorithms
December 12, 2003
Am49DL640AH
19
A D V A N C E I N F O R M A T I O N
cure ESN will be programmed in the next 8 words at
addresses 000008h–00000Fh. The device is available
preprogrammed with one of the following:
SecSi™ (Secured Silicon) Sector
Flash Memory Region
The SecSi (Secured Silicon) Sector feature provides a
Flash memory region that enables permanent part
identification through an Electronic Serial Number
(ESN). The SecSi Sector is 256 bytes in length, and
uses a SecSi Sector Indicator Bit (DQ7) to indicate
whether or not the SecSi Sector is locked when
shipped from the factory. This bit is permanently set at
the factory and cannot be changed, which prevents
cloning of a factory locked part. This ensures the secu-
rity of the ESN once the product is shipped to the field.
■ A random, secure ESN only
■ Customer code through the ExpressFlash service
■ Both a random, secure ESN and customer code
through the ExpressFlash service.
Customers may opt to have their code programmed by
AMD through the AMD ExpressFlash service. AMD
programs the customer’s code, with or without the ran-
dom ESN. The devices are then shipped from AMD’s
factory with the SecSi Sector permanently locked.
Contact an AMD representative for details on using
AMD’s ExpressFlash service.
AMD offers the device with the SecSi Sector either
factory locked or customer lockable. The fac-
tory-locked version is always protected when shipped
from the factory, and has the SecSi (Secured Silicon)
Sector Indicator Bit permanently set to a “1.” The cus-
tomer-lockable version is shipped with the SecSi Sec-
tor unprotected, allowing customers to utilize the that
sector in any manner they choose. The customer-lock-
able version has the SecSi (Secured Silicon) Sector
Indicator Bit permanently set to a “0.” Thus, the SecSi
Sector Indicator Bit prevents customer-lockable de-
vices from being used to replace devices that are fac-
tory locked.
Customer Lockable: SecSi Sector NOT
Programmed or Protected At the Factory
If the security feature is not required, the SecSi Sector
can be treated as an additional Flash memory space.
The SecSi Sector can be read any number of times,
but can be programmed and locked only once. Note
that the accelerated programming (ACC) and unlock
bypass functions are not available when programming
the SecSi Sector.
The SecSi Sector area can be protected using one of
the following procedures:
The system accesses the SecSi Sector Secure Sector
through a command sequence (see “Enter SecSi™
Sector/Exit SecSi Sector Command Sequence”). After
the system has written the Enter SecSi Sector com-
mand sequence, it may read the SecSi Sector by
using the addresses normally occupied by the boot
sectors. This mode of operation continues until the
system issues the Exit SecSi Sector command se-
quence, or until power is removed from the device. On
power-up, or following a hardware reset, the device re-
verts to sending commands to the first 256 bytes of
Sector 0. Note that the ACC function and unlock by-
pass modes are not available when the SecSi Sector
is enabled.
■ Write the three-cycle Enter SecSi Sector Region
command sequence, and then follow the in-system
sector protect algorithm as shown in Figure 2, ex-
cept that RESET# may be at either VIH or VID. This
allows in-system protection of the SecSi Sector Re-
gion without raising any device pin to a high voltage.
Note that this method is only applicable to the SecSi
Sector.
■ To verify the protect/unprotect status of the SecSi
Sector, follow the algorithm shown in Figure 3.
Once the SecSi Sector is locked and verified, the sys-
tem must write the Exit SecSi Sector Region com-
mand sequence to return to reading and writing the
remainder of the array.
Factory Locked: SecSi Sector Programmed and
Protected At the Factory
In a factory locked device, the SecSi Sector is pro-
tected when the device is shipped from the factory.
The SecSi Sector cannot be modified in any way. The
device is preprogrammed with both a random number
and a secure ESN. The 8-word random number will at
addresses 000000h–000007h in word mode. The se-
The SecSi Sector lock must be used with caution
since, once locked, there is no procedure available for
unlocking the SecSi Sector area and none of the bits
in the SecSi Sector memory space can be modified in
any way.
20
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#f
or WE# do not initiate a write cycle.
START
Logical Inhibit
If data = 00h,
SecSi Sector is
unprotected.
If data = 01h,
SecSi Sector is
protected.
RESET# =
VIH or VID
Write cycles are inhibited by holding any one of OE# =
VIL, CE#f = VIH or WE# = VIH. To initiate a write cycle,
CE#f and WE# must be a logical zero while OE# is a
logical one.
Wait 1 µs
Write 60h to
any address
Power-Up Write Inhibit
Remove VIH or VID
from RESET#
If WE# = CE#f = VIL and OE# = VIH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automati-
cally reset to the read mode on power-up.
Write 40h to SecSi
Sector address
with A6 = 0,
Write reset
command
A1 = 1, A0 = 0
COMMON FLASH MEMORY INTERFACE
(CFI)
SecSi Sector
Protect Verify
complete
Read from SecSi
Sector address
with A6 = 0,
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-inde-
pendent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
A1 = 1, A0 = 0
Figure 3. SecSi Sector Protect Verify
Hardware Data Protection
This device enters the CFI Query mode when the sys-
tem writes the CFI Query command, 98h, to address
55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The
system can read CFI information at the addresses
given in Tables 8–11. To terminate reading CFI data,
the system must write the reset command.The CFI
Query mode is not accessible when the device is exe-
cuting an Embedded Program or embedded Erase al-
gorithm.
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 12 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 8–11. The
system must write the reset command to return the
device to reading array data.
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to the read mode. Subsequent
writes are ignored until VCC is greater than VLKO. The
system must provide the proper signals to the control
pins to prevent unintentional writes when VCC is
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/flash/cfi. Alterna-
tively, contact an AMD representative for copies of
these documents.
greater than VLKO
.
December 12, 2003
Am49DL640AH
21
A D V A N C E I N F O R M A T I O N
Table 8. CFI Query Identification String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Table 9. System Interface String
Data Description
Addresses
(Word Mode)
Addresses
(Byte Mode)
VCC Min. (write/erase)
0027h
1Bh
1Ch
36h
38h
D7–D4: volt, D3–D0: 100 millivolt
VCC Max. (write/erase)
0036h
D7–D4: volt, D3–D0: 100 millivolt
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
0000h
0003h
0000h
0009h
0000h
0005h
0000h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
22
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Table 10. Device Geometry Definition
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
27h
4Eh
0017h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
December 12, 2003
Am49DL640AH
23
A D V A N C E I N F O R M A T I O N
Table 11. Primary Vendor-Specific Extended Query
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
44h
86h
88h
0031h
0033h
Major version number, ASCII (reflects modifications to the silicon)
Minor version number, ASCII (reflects modifications to the CFI table)
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
45h
8Ah
0004h
Silicon Revision Number (Bits 7-2)
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
46h
47h
48h
8Ch
8Eh
90h
0002h
0001h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
49h
92h
0004h
01 =29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800
mode
Simultaneous Operation
00 = Not Supported, X = Number of Sectors (excluding Bank 1)
4Ah
4Bh
4Ch
94h
96h
98h
0077h
0000h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
ACC (Acceleration) Supply Minimum
4Dh
4Eh
9Ah
9Ch
0085h
0095h
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
Top/Bottom Boot Sector Flag
00h = Uniform device, 01h = 8 x 8 Kbyte Sectors, Top And Bottom Boot
with Write Protect, 02h = Bottom Boot Device, 03h = Top Boot Device,
04h = Both Top and Bottom
4Fh
9Eh
0001h
Program Suspend
50h
57h
58h
59h
5Ah
5Bh
A0h
AEh
B0h
B2h
B4h
B6h
0001h
0004h
0017h
0030h
0030h
0017h
0 = Not supported, 1 = Supported
Bank Organization
00 = Data at 4Ah is zero, X = Number of Banks
Bank 1 Region Information
X = Number of Sectors in Bank 1
Bank 2 Region Information
X = Number of Sectors in Bank 2
Bank 3 Region Information
X = Number of Sectors in Bank 3
Bank 4 Region Information
X = Number of Sectors in Bank 4
24
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 12 defines the valid register command
sequences. Writing incorrect address and data values
or writing them in the improper sequence may place
the device in an unknown state. A reset command is
then required to return the device to reading array
data.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-sus-
pend-read mode. Once programming begins, however,
the device ignores reset commands until the operation
is complete.
All addresses are latched on the falling edge of WE#
or CE#f, whichever happens later. All data is latched
on the rising edge of WE# or CE#f, whichever hap-
pens first. Refer to the pSRAM AC Characteristics
section for timing diagrams.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Sus-
pend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-sus-
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. The system can read array data using the
standard read timing, except that if it reads at an ad-
dress within erase-suspended sectors, the device out-
puts status data. After completing a programming
operation in the Erase Suspend mode, the system
may once again read array data with the same excep-
tion. See the Erase Suspend/Erase Resume Com-
mands section for more information.
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
The autoselect command sequence may be written to
an address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively pro-
gramming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the au-
toselect command. The bank then enters the autose-
lect mode. The system may read any number of
autoselect codes without reinitiating the command se-
quence.
The system must issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
tion, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
section for more information. The Read-Only Opera-
tions table provides the read parameters, and Figure
15 shows the timing diagram.
Table 12 shows the address and data requirements.
To determine sector protection information, the system
must write to the appropriate bank address (BA) and
sector address (SADD). Table 3 shows the address
range and bank number associated with each sector.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to the read mode. Once erasure be-
gins, however, the device ignores reset commands
until the operation is complete.
Enter SecSi™ Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
December 12, 2003
Am49DL640AH
25
A D V A N C E I N F O R M A T I O N
Sector command sequence. The device continues to
DQ6 status bits to indicate the operation was success-
ful. However, a succeeding read will show that the
data is still “0.” Only erase operations can convert a “0”
to a “1.”
access the SecSi Sector region until the system is-
sues the four-cycle Exit SecSi Sector command se-
quence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or embedded Erase algorithm.
Table 12 shows the address and data requirements for
both command sequences. See also “SecSi™ (Se-
cured Silicon) Sector Flash Memory Region” for further
information. Note that the ACC function and unlock by-
pass modes are not available when the SecSi Sector
is enabled.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing
two unlock cycles. This is followed by a third write
cycle containing the unlock bypass command, 20h.
That bank then enters the unlock bypass mode. A
two-cycle unlock bypass program command sequence
is all that is required to program in this mode. The first
cycle in this sequence contains the unlock bypass pro-
gram command, A0h; the second cycle contains the
program address and data. Additional data is pro-
grammed in the same manner. This mode dispenses
with the initial two unlock cycles required in the stan-
dard program command sequence, resulting in faster
total programming time. Table 12 shows the require-
ments for the command sequence.
Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the CIOf pin. Programming
is a four-bus-cycle operation. The program command
sequence is initiated by writing two unlock write cy-
cles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or
timings. The device automatically provides internally
generated program pulses and verifies the pro-
grammed cell margin. Table 12 shows the address and
data requirements for the byte program command se-
quence.
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the bank
address and the data 90h. The second cycle need
only contain the data 00h. The bank then returns to
the read mode.
When the Embedded Program algorithm is complete,
that bank then returns to the read mode and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using
DQ7, DQ6, or RY/BY#. Refer to the Flash Write Oper-
ation Status section for information on these status
bits.
The device offers accelerated program operations
through the WP#/ACC pin. When the system asserts
VHH on the WP#/ACC pin, the device automatically en-
ters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that
the WP#/ACC pin must not be at VHH any operation
other than accelerated programming, or device dam-
age may result. In addition, the WP#/ACC pin must not
be left floating or unconnected; inconsistent behavior
of the device may result.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program
operation. The program command sequence should
be reinitiated once that bank has returned to the read
mode, to ensure data integrity. Note that the SecSi
Sector, autoselect, and CFI functions are unavailable
when a program operation is in progress
Figure 4 illustrates the algorithm for the program oper-
ation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters,
and Figure 19 for timing diagrams.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7 and
26
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Any commands written during the chip erase operation
are ignored. However, note that a hardware reset im-
mediately terminates the erase operation. If that oc-
curs, the chip erase command sequence should be
reinitiated once that bank has returned to reading
array data, to ensure data integrity.
START
Figure 5 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 21 section for timing diagrams.
Write Program
Command Sequence
Data Poll
from System
Sector Erase Command Sequence
Embedded
Program
algorithm
in progress
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two ad-
ditional unlock cycles are written, and are then fol-
lowed by the address of the sector to be erased, and
the sector erase command. Table 12 shows the ad-
dress and data requirements for the sector erase com-
mand sequence.
Verify Data?
Yes
No
No
The device does not require the system to preprogram
prior to erase. The Embedded Erase algorithm auto-
matically programs and verifies the entire memory for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
Increment Address
Last Address?
Yes
Programming
Completed
After the command sequence is written, a sector erase
time-out of 80 µs occurs. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time
between these additional cycles must be less than 80
µs, otherwise erasure may begin. Any sector erase ad-
dress and command following the exceeded time-out
may or may not be accepted. It is recommended that
processor interrupts be disabled during this time to en-
sure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. Any command other than Sector Erase or
Erase Suspend during the time-out period resets
that bank to the read mode. The system must rewrite
the command sequence and any additional addresses
and commands. Note that the SecSi Sector, autose-
lect, and CFI functions are unavailable when an erase
operation in is progress.
Note: See Table 12 for program command sequence.
Figure 4. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 12
shows the address and data requirements for the chip
erase command sequence.
The system can monitor DQ3 to determine if the sec-
tor erase timer has timed out (See the section on DQ3:
Sector Erase Timer.). The time-out begins from the ris-
ing edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete,
that bank returns to the read mode and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2,
or RY/BY#. Refer to the Flash Write Operation Status
section for information on these status bits.
When the Embedded Erase algorithm is complete, the
bank returns to reading array data and addresses are
no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
December 12, 2003
Am49DL640AH
27
A D V A N C E I N F O R M A T I O N
data from the non-erasing bank. The system can de-
just as in the standard Byte Program operation.
Refer to the Flash Write Operation Status section for
more information.
termine the status of the erase operation by reading
DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer
to the Flash Write Operation Status section for infor-
mation on these status bits.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. The device
allows reading autoselect codes even at addresses
within erasing sectors, since the codes are not stored
in the memory array. When the device exits the au-
toselect mode, the device reverts to the Erase Sus-
pend mode, and is ready for another valid operation.
Refer to the Sector/Sector Block Protection and Un-
protection and Autoselect Command Sequence sec-
tions for details.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 5 illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 21 section for timing diagrams.
To resume the sector erase operation, the system
must write the Erase Resume command (address bits
are don’t care). The bank address of the erase-sus-
pended bank is required when writing this command.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the chip has resumed erasing.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. The bank address is required when writing
this command. This command is valid only during the
sector erase operation, including the 80 µs time-out
period during the sector erase command sequence.
The Erase Suspend command is ignored if written dur-
ing the chip erase operation or Embedded Program
algorithm.
START
Write Erase
Command Sequence
(Notes 1, 2)
When the Erase Suspend command is written during
the sector erase operation, the device requires a max-
imum of 20 µs to suspend the erase operation. How-
ever, when the Erase Suspend command is written
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation. Addresses are “don’t-cares” when
writing the Erase suspend command.
Data Poll to Erasing
Bank from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Flash Write Operation Status section for
information on these status bits.
Yes
Erasure Completed
Notes:
1. See Table 12 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
After an erase-suspended program operation is com-
plete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
Figure 5. Erase Operation
28
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Table 12. Am29DL640H Command Definitions
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Fifth
Addr
Sixth
Addr
Addr Data Addr Data
Data
Addr
Data
Data
Data
Read (Note 6)
Reset (Note 7)
1
1
RA
XXX
555
AAA
555
AAA
555
AAA
RD
F0
2AA
555
2AA
555
2AA
555
(BA)555
(BA)AAA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
Manufacturer ID
Word
Word
Word
4
6
4
AA
AA
AA
55
55
55
90 (BA)X00
01
7E
(BA)X01
90
(BA)X0E
(BA)X1C
(BA)X0F
(BA)X1E
Device ID (Note 9)
02
01
(BA)X02
(BA)X03
(BA)X06
SecSi Sector Factory
Protect (Note 10)
90
80/00
(SADD)
X02
(SADD)
X04
555
2AA
555
(BA)555
(BA)AAA
Sector/Sector Block
Protect Verify
(Note 11)
Word
4
AA
55
90
00/01
AAA
555
AAA
555
AAA
555
AAA
555
AAA
XXX
BA
555
AAA
555
AAA
BA
2AA
555
2AA
555
2AA
555
2AA
555
PA
XXX
2AA
555
2AA
555
555
AAA
555
AAA
555
AAA
555
AAA
Enter SecSi Sector Region Word
3
4
4
3
AA
AA
AA
AA
55
55
55
55
88
Exit SecSi Sector Region
Program
Word
Word
Word
90
A0
20
XXX
PA
00
PD
Unlock Bypass
Unlock Bypass Program (Note 12)
Unlock Bypass Reset (Note 13)
2
2
A0
90
PD
00
555
AAA
555
555
AAA
555
2AA
555
2AA
555
555
AAA
Chip Erase
Word
Word
6
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
Sector Erase
SADD
AAA
AAA
Erase Suspend (Note 14)
Erase Resume (Note 15)
1
1
B0
30
BA
55
AA
CFI Query (Note 16)
Word
1
98
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on the rising
edge of WE# or CE#f pulse, whichever happens first.
SADD = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A21–A12 uniquely select any sector. Refer to
Table 3 for information on sector addresses.
BA = Address of the bank that is being switched to autoselect mode, is
in bypass mode, or is being erased. Address bits A21–A19 select a
bank. Refer to Table 4 for information on sector addresses.
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE#f pulse, whichever happens
later.
Notes:
1. See Tables 1 to 2 for description of bus operations.
2. All values are in hexadecimal.
9. The device ID must be read across the fourth, fifth, and sixth
cycles.
10. The data is 80h for factory locked, 40h for customer locked, and
00h for not factory locked.
11. The data is 00h for an unprotected sector/sector block and 01h for
a protected sector/sector block.
3. Except for the read cycle and the fourth cycle of the autoselect
command sequence, all bus cycles are write cycles.
4. Data bits DQ15–DQ8 are don’t care in command sequences,
except for RD and PD.
12. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
5. Unless otherwise noted, address bits A21–A12 are don’t cares for
unlock and command cycles, unless SADD or PA is required.
13. The Unlock Bypass Reset command is required to return to the
read mode when the bank is in the unlock bypass mode.
6. No unlock or command cycles required when bank is reading
array data.
14. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation, and requires the bank address.
7. The Reset command is required to return to the read mode (or to
the erase-suspend-read mode if previously in Erase Suspend)
when a bank is in the autoselect mode, or if DQ5 goes high (while
the bank is providing status information).
15. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
16. Command is valid when device is ready to read array data or when
device is in autoselect mode.
8. The fourth cycle of the autoselect command sequence is a read
cycle. The system must provide the bank address to obtain the
manufacturer ID, device ID, or SecSi Sector factory protect
information. Data bits DQ15–DQ8 are don’t care. See the
Autoselect Command Sequence section for more information.
December 12, 2003
Am49DL640AH
29
A D V A N C E I N F O R M A T I O N
FLASH WRITE OPERATION STATUS
The device provides several bits to determine the status of a
program or erase operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 13 and the following subsections describe the
function of these bits. DQ7 and DQ6 each offer a method for
determining whether a program or erase operation is com-
plete or in progress. The device also provides a hard-
ware-based output signal, RY/BY#, to determine whether
an Embedded Program or Erase operation is in progress or
has been completed.
if the device has completed the program or erase op-
eration and DQ7 has valid data, the data outputs on
DQ15–DQ0 may be still invalid. Valid data on
DQ15–DQ0 will appear on successive read cycles.
Table 13 shows the outputs for Data# Polling on DQ7.
Figure 6 shows the Data# Polling algorithm. Figure 23
in the pSRAM AC Characteristics section shows the
Data# Polling timing diagram.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system
whether an Embedded Program or Erase algorithm is in
progress or completed, or whether a bank is in Erase Sus-
pend. Data# Polling is valid after the rising edge of the final
WE# pulse in the command sequence.
START
Read DQ7–DQ0
Addr = VA
During the Embedded Program algorithm, the device out-
puts on DQ7 the complement of the datum programmed to
DQ7. This DQ7 status also applies to programming during
Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to
DQ7. The system must provide the program address to
read valid status information on DQ7. If a program address
falls within a protected sector, Data# Polling on DQ7 is ac-
tive for approximately 1 µs, then that bank returns to the
read mode.
Yes
DQ7 = Data?
No
No
DQ5 = 1?
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
The system must provide an address within any of the
sectors selected for erasure to read valid status infor-
mation on DQ7.
Yes
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Poll-
ing on DQ7 is active for approximately 100 µs, then the
bank returns to the read mode. If not all selected sec-
tors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected. However, if the sys-
tem reads DQ7 at an address within a protected
sector, the status may not be valid.
Yes
DQ7 = Data?
No
PASS
FAIL
Notes:
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ15–DQ0 (or DQ7–DQ0 for byte mode) on the fol-
lowing read cycles. Just prior to the completion of an
Embedded Program or Erase operation, DQ7 may
change asynchronously with DQ15–DQ8 while Output
Enable (OE#) is asserted low. That is, the device may
change from providing status information to valid data
on DQ7. Depending on when the system samples the
DQ7 output, it may read the status or valid data. Even
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 6. Data# Polling Algorithm
30
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
DQ6 also toggles during the erase-suspend-program
RY/BY#: Ready/Busy#
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
The RY/BY# is a dedicated, open-drain output pin
which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
Table 13 shows the outputs for Toggle Bit I on DQ6.
Figure 7 shows the toggle bit algorithm. Figure 24 in
the “Flash AC Characteristics” section shows the tog-
gle bit timing diagrams. Figure 25 shows the differ-
ences between DQ2 and DQ6 in graphical form. See
also the subsection on DQ2: Toggle Bit II.
pull-up resistor to VCC
.
If the output is low (Busy), the device is actively eras-
ing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is in the read mode, the standby
mode, or one of the banks is in the erase-sus-
pend-read mode.
START
Read Byte
(DQ7–DQ0)
Address =VA
Table 13 shows the outputs for RY/BY#.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or com-
plete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any ad-
dress, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
Read Byte
(DQ7–DQ0)
Address =VA
No
Toggle Bit
= Toggle?
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. The system may use either OE# or
CE#f to control the read cycles. When the operation is
complete, DQ6 stops toggling.
Yes
No
DQ5 = 1?
Yes
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are pro-
tected.
Read Byte Twice
(DQ7–DQ0)
Address = VA
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Sus-
pend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Poll-
ing).
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
Figure 7. Toggle Bit Algorithm
December 12, 2003
Am49DL640AH
31
A D V A N C E I N F O R M A T I O N
the toggle bit and DQ5 through successive read cy-
DQ2: Toggle Bit II
cles, determining the status as described in the previ-
ous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to de-
termine the status of the operation (top of Figure 7).
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ5: Exceeded Timing Limits
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE#f to con-
trol the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode information. Refer to Table 13 to compare out-
puts for DQ2 and DQ6.
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under these
conditions DQ5 produces a “1,” indicating that the program
or erase cycle was not successfully completed.
The device may output a “1” on DQ5 if the system tries
to program a “1” to a location that was previously pro-
grammed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the timing limit
has been exceeded, DQ5 produces a “1.”
Under both these conditions, the system must write
the reset command to return to the read mode (or to
the erase-suspend-read mode if a bank was previ-
ously in the erase-suspend-program mode).
Figure 7 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the DQ6: Toggle Bit I subsection.
Figure 24 shows the toggle bit timing diagram. Figure
25 shows the differences between DQ2 and DQ6 in
graphical form.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase com-
mand. When the time-out period is complete, DQ3
switches from a “0” to a “1.” If the time between addi-
tional sector erase commands from the system can be
assumed to be less than 50 µs, the system need not
monitor DQ3. See also the Sector Erase Command
Sequence section.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 7 for the following discussion. When-
ever the system initially begins reading toggle bit sta-
tus, it must read DQ15–DQ0 AT least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the tog-
gle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ15–DQ0 on the fol-
lowing read cycle.
After the sector erase command is written, the system
should read the status of DQ7 (Data# Polling) or DQ6
(Toggle Bit I) to ensure that the device has accepted
the command sequence, and then read DQ3. If DQ3 is
“1,” the Embedded Erase algorithm has begun; all fur-
ther commands (except Erase Suspend) are ignored
until the erase operation is complete. If DQ3 is “0,” the
device will accept additional sector erase commands.
To ensure the command has been accepted, the sys-
tem software should check the status of DQ3 prior to
and following each subsequent sector erase com-
mand. If DQ3 is high on the second status check, the
last command might not have been accepted.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the sys-
tem also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is tog-
gling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the de-
vice did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
Table 13 shows the status of DQ3 relative to the other
status bits.
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
32
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
Table 13. Write Operation Status
DQ7
DQ5
DQ2
Status
(Note 2)
DQ6
(Note 1)
DQ3
N/A
1
(Note 2)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
Erase
Erase-Suspend-
Read
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
1
No toggle
0
N/A
Toggle
1
Suspended Sector
Erase
Suspend
Mode
Non-Erase
Suspended Sector
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm
is in progress. The device outputs array data if the system addresses a non-busy bank.
December 12, 2003
Am49DL640AH
33
A D V A N C E I N F O R M A T I O N
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –55°C to +125°C
20 ns
20 ns
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . –40°C to +85°C
+0.8 V
Voltage with Respect to Ground
–0.5 V
–2.0 V
V
CC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
WP#/ACC . . . . . . . . . . . . . . . . . .–0.5 V to +10.5 V
All other pins (Note 1) . . . . . . –0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
20 ns
Figure 8. Maximum Negative
Overshoot Waveform
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot VSS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 8. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 9.
20 ns
VCC
+2.0 V
2. Minimum DC input voltage on pins RESET#, and
WP#/ACC is –0.5 V. During voltage transitions,
WP#/ACC, and RESET# may overshoot VSS to –2.0 V for
periods of up to 20 ns. See Figure 8. Maximum DC input
voltage on pin RESET# is +12.5 V which may overshoot
to +14.0 V for periods up to 20 ns. Maximum DC input
voltage on WP#/ACC is +9.5 V which may overshoot to
+12.0 V for periods up to 20 ns.
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 9. Maximum Positive
Overshoot Waveform
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
VCCf/VCCs Supply Voltages
V
CCf/VCCs for standard voltage range . .2.7 V to 3.3 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
34
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
VIN = VSS to VCC
VCC = VCC max
,
ILI
Input Load Current
1.0
35
µA
µA
µA
µA
µA
ILIT
ILO
ILR
ILIA
RESET# Input Load Current
Output Leakage Current
Reset Leakage Current
ACC Input Leakage Current
VCC = VCC max; RESET# = 12.5 V
VOUT = VSS to VCC
CC = VCC max
,
1.0
35
V
VCC = VCC max; RESET# = 12.5 V
VCC = VCC max, WP#/ACC
= VACC max
35
5 MHz
10
2
16
4
CE#f = VIL, OE# = VIH,
Byte Mode
1 MHz
5 MHz
1 MHz
Flash VCC Active Read Current
(Notes 1, 2)
ICC1
f
f
mA
10
2
16
4
CE#f = VIL, OE# = VIH,
Word Mode
ICC2
Flash VCC Active Write Current (Notes 2, 3) CE#f = VIL, OE# = VIH, WE# = VIL
15
30
mA
µA
VCCf = VCC max, CE#f, RESET#,
ICC3f
Flash VCC Standby Current (Note 2)
0.2
0.2
0.2
5
5
5
WP#/ACC = VCC
VCCf = VCC max, RESET# = VSS 0.3 V,
WP#/ACC = VCC 0.3 V
Flash VCC Current Automatic Sleep Mode VCCf = VCC max, VIH = VCC 0.3 V;
f
0.3 V
ICC4
ICC5
f
f
Flash VCC Reset Current (Note 2)
µA
µA
f
(Notes 2, 4)
VIL = VSS 0.3 V
21
21
21
21
45
45
45
45
Flash VCC Active Read-While-Program
Current (Notes 1, 2)
ICC6
f
f
CE#f = VIL, OE# = VIH
Word
Word
mA
mA
Flash VCC Active Read-While-Erase
Current (Notes 1, 2)
ICC7
CE#f = VIL, OE# = VIH
Flash VCC Active
ICC8
f
Program-While-Erase-Suspended Current CE#f = VIL, OE#f = VIH
(Notes 2, 5)
17
35
mA
VIL
VIH
Input Low Voltage
Input High Voltage
–0.2
2.4
0.8
V
V
V
CC + 0.2
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
VHH
8.5
9.5
V
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
VID
VOL
11.5
12.5
0.45
V
V
Output Low Voltage
IOL = 2.0 mA, VCCf = VCCs = VCC min
OH = –2.0 mA, VCCf = VCCs = VCC min
IOH = –100 µA, VCC = VCC min
0.85 x
VCC
VOH1
I
Output High Voltage
V
V
VOH2
VLKO
VCC–0.4
2.0
Flash Low VCC Lock-Out Voltage (Note 5)
2.5
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at
VIH
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. CC active while Embedded Erase or Embedded Program is in
progress.
4. Automatic sleep mode enables the low power mode when
addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
.
5. Not 100% tested.
I
December 12, 2003
Am49DL640AH
35
A D V A N C E I N F O R M A T I O N
FLASH DC CHARACTERISTICS
Zero-Power Flash
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 10. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents)
12
10
8
3.3 V
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note: T = 25 °C
Figure 11. Typical ICC1 vs. Frequency
36
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
pSRAM DC & OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
VIN = VSS to VCC
Min
Typ
Max
Unit
ILI
Input Leakage Current
Output Leakage Current
0.5
0.5
µA
µA
ILO
OE# = VIH or Chip Disabled
VCC = VCC Max, VIN = VIH/VIL
Chip Enabled, IOUT = 0
ICC1s
Operating Current
25
mA
t
RC = Min
VOL
VOH
Output Low Voltage
Output High Voltage
IOL = –2.0 mA
IOH = 0.2 mA
0.2
V
V
VCC–0.2
VIN = VCC or 0 V
Chip Disabled
tA = 85C, VCC = 3.0 V
ISB
Standby Current (CMOS)
100
0.6
µA
VIL
VIH
Input Low Voltage
Input High Voltage
–0.3
2.2
V
V
VCC
+
0.3
December 12, 2003
Am49DL640AH
37
A D V A N C E I N F O R M A T I O N
TEST CONDITIONS
Table 14. Test Specifications
3.3 V
Test Condition
Output Load
All Speed Options Unit
1 TTL gate
2.7 kΩ
Device
Under
Test
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
Input Pulse Levels
5
ns
V
C
L
6.2 kΩ
0.0–3.0
Input timing measurement
reference levels
1.5
1.5
V
V
Output timing measurement
reference levels
Note: Diodes are IN3064 or equivalent
Figure 12. Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
KS000010-PAL
3.0 V
0.0 V
1.5 V
1.5 V
Input
Measurement Level
Output
Figure 13. Input Waveforms and Measurement Levels
38
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
pSRAM AC CHARACTERISTICS
CE#1ps Timing
Parameter
Test Setup
AllSpeeds
Unit
JEDEC
Std
Description
—
tCCR
CE#1ps Recover Time
—
Min
0
ns
CE#1ps
CE2ps
tCCR
tCCR
Figure 14. Timing Diagram for Alternating
Between Pseudo SRAM and Flash
December 12, 2003
Am49DL640AH
39
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed
70
JEDEC
tAVAV
Std. Description
Test Setup
56
55
55
55
25
85
85
85
85
40
Unit
ns
tRC
tACC
tCE
Read Cycle Time (Note 1)
Min
Max
Max
Max
70
tAVQV
tELQV
Address to Output Delay
CE#f, OE# = VIL
OE# = VIL
70
ns
Chip Enable to Output Delay
Output Enable to Output Delay
70
ns
tGLQV
tOE
30
ns
Chip Enable to Output High Z
(Notes 1, 3)
tEHQZ
tGHQZ
tAXQX
tDF
tDF
tOH
Max
Max
25
30
30
35
ns
ns
Output Enable to Output High Z
(Notes 1, 3)
Output Hold Time From Addresses,
CE#f or OE#, Whichever Occurs First
Min
Min
Min
0
0
ns
ns
ns
Read
Output Enable Hold
Time (Note 1)
tOEH
Toggle and
Data# Polling
10
Notes:
1. Not 100% tested.
2. See Figure 12 and Table 14 for test specifications
3. Measurements performed by placing a 50Ω termination on the data pin with a bias of VCC/2. The time from OE# high to the
data bus driven to VCC/2 is taken as tDF
.
tRC
Addresses Stable
tACC
Addresses
CE#f
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 15. Read Operation Timings
40
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
tReady
Max
Max
20
µs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
tReady
500
ns
tRP
tRH
tRPD
tRB
RESET# Pulse Width
Min
Min
Min
Min
500
50
20
0
ns
ns
µs
ns
Reset High Time Before Read (See Note)
RESET# Low to Standby Mode
RY/BY# Recovery Time
Note: Not 100% tested.
RY/BY#
CE#f, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#f, OE#
RESET#
tRP
Figure 16. Reset Timings
December 12, 2003
Am49DL640AH
41
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Word Configuration (CIOf)
Parameter
Speed
70
JEDEC
Std
tELFL/ ELFH
tFLQZ
tFHQV
Description
56
85
Unit
ns
t
CE#f to CIOf Switching Low or High
CIOf Switching Low to Output HIGH Z
CIOf Switching High to Output Active
Max
Max
5
30
ns
55
70
70
ns
CE#f
OE#
CIOf
tELFL
Data Output
(DQ14–DQ0)
Data Output
(DQ7–DQ0)
CIOf
DQ14–DQ0
Switching
from word
to byte
Address
Input
DQ15
Output
mode
DQ15/A-1
tFLQZ
tELFH
CIOf
CIOf
Switching
from byte
to word
Data Output
(DQ7–DQ0)
Data Output
(DQ14–DQ0)
DQ14–DQ0
DQ15/A-1
mode
Address
Input
DQ15
Output
tFHQV
Figure 17. CIOf Timings for Read Operations
CE#f
WE#
The falling edge of the last WE# signal
CIOf
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 18. CIOf Timings for Write Operations
42
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed
70
JEDEC
tAVAV
Std
tWC
tAS
Description
56
85
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Min
Min
55
70
85
tAVWL
0
ns
Address Setup Time to OE# low during toggle bit
polling
tASO
tAH
Min
Min
Min
15
40
0
ns
ns
ns
tWLAX
Address Hold Time
30
30
45
45
Address Hold Time From CE#f or OE# high
during toggle bit polling
tAHT
tDVWH
tWHDX
tDS
tDH
Data Setup Time
Min
Min
Min
40
0
ns
ns
ns
Data Hold Time
tOEPH
Output Enable High during toggle bit polling
20
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tWLEL
tELWL
tEHWH
tWHEH
tWLWH
tWHDL
tWS
tCS
WE# Setup Time (CE#f to WE#)
CE#f Setup Time
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
ns
ns
ns
tWH
WE# Hold Time (CE#f to WE#)
CE#f Hold Time
0
tCH
0
tWP
Write Pulse Width
25
30
30
0
35
tWPH
tSR/W
Write Pulse Width High
Latency Between Read and Write Operations
5
tWHWH1
tWHWH1 Programming Operation (Note 2)
Word
µs
µs
7
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH1
tWHWH2
tWHWH1
Typ
4
tWHWH2 Sector Erase Operation (Note 2)
Typ
Min
Min
Max
0.4
50
0
sec
µs
tVCS
tRB
VCC Setup Time (Note 1)
Write Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
ns
tBUSY
90
ns
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
December 12, 2003
Am49DL640AH
43
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
PA
tWC
Addresses
555h
PA
PA
tAH
CE#f
OE#
tCH
tGHWL
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
Data
tBUSY
tRB
RY/BY#
V
CCf
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 19. Program Operation Timings
VHH
VIL or VIH
WP#/ACC
VIL or VIH
tVHH
tVHH
Figure 20. Accelerated Program Timing Diagram
44
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
tWC
VA
Addresses
CE#f
2AAh
SADD
555h for chip erase
tAH
tGHWL
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
f
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Flash Write Operation Status”.
2. These waveforms are for the word mode.
Figure 21. Chip/Sector Erase Operation Timings
December 12, 2003
Am49DL640AH
45
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
tWC
Valid PA
tWC
tRC
tWC
Valid PA
tAH
Valid RA
Valid PA
Addresses
tCPH
tACC
tCE
CE#f
OE#
tCP
tOE
tOEH
tGHWL
tWP
WE#
Data
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
CE#f Controlled Write Cycles
Figure 22. Back-to-back Read/Write Cycle Timings
tRC
Addresses
CE#f
VA
tACC
tCE
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ7
Valid Data
Complement
Complement
True
DQ6–DQ0
Status Data
True
Valid Data
Status Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 23. Data# Polling Timings (During Embedded Algorithms)
46
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
tAHT
tAS
Addresses
CE#f
tAHT
tASO
tCEPH
tOEH
WE#
OE#
tOEPH
tDH
Valid Data
tOE
Valid
Status
Valid
Status
Valid
Status
DQ6/DQ2
Valid Data
(first read)
(second read)
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle.
Figure 24. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE#f to
toggle DQ2 and DQ6.
Figure 25. DQ2 vs. DQ6
December 12, 2003
Am49DL640AH
47
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
tVIDR
tVHH
Description
All Speed Options
Unit
ns
VID Rise and Fall Time (See Note)
VHH Rise and Fall Time (See Note)
Min
Min
500
250
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
Min
Min
4
4
µs
µs
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
tRRB
Note: Not 100% tested.
VID
VID
RESET#
VSS, VIL,
or VIH
VSS, VIL,
or VIH
tVIDR
tVIDR
Program or Erase Command Sequence
CE#f
WE#
tRRB
tRSP
RY/BY#
Figure 26. Temporary Sector Unprotect Timing Diagram
48
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
V
V
ID
IH
RESET#
SADD,
A6, A1, A0
Valid*
Valid*
Valid*
Status
Sector/Sector Block Protect or Unprotect
Verify
40h
Data
60h
60h
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#f
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0, SADD = Sector Address.
Figure 27. Sector/Sector Block Protect and
Unprotect Timing Diagram
December 12, 2003
Am49DL640AH
49
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Parameter
Speed
70
70
0
JEDEC
tAVAV
Std
tWC
tAS
tAH
tDS
tDH
Description
56
85
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Min
Min
Min
Min
Min
55
85
tAVWL
tELAX
tDVEH
tEHDX
ns
30
30
40
40
0
45
45
ns
ns
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
ns
ns
CE#f Pulse Width
CE#f Pulse Width High
25
25
40
45
tCPH
30
5
7
Programming Operation
(Note 2)
tWHWH1
tWHWH1
Word
µs
Accelerated Programming Operation,
Word or Byte (Note 2)
tWHWH1
tWHWH2
Notes:
tWHWH1
tWHWH2
Typ
Typ
4
µs
Sector Erase Operation (Note 2)
0.4
sec
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
50
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SADD for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#f
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SADD = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 28. Flash Alternate CE#f Controlled Write (Erase/Program) Operation Timings
December 12, 2003
Am49DL640AH
51
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Power Up Time
When powering up the SRAM, maintain VCCs for 100 µs minimum with CE#1s at VIH.
Read Cycle
Parameter
Symbol
Description
All Speed Options
Unit
tRC
Read Cycle Time
Min
Max
Max
Max
Max
70
70
70
35
70
ns
ns
ns
ns
ns
tAA
Address Access Time
Chip Enable to Output
Output Enable Access Time
LB#s, UB#s to Access Time
tCO1, tCO2
tOE
tBA
Chip Enable (CE1#s Low and CE2s High) to Low-Z
Output
tLZ1, tLZ2
Min
5
ns
tBLZ
tOLZ
tHZ
UB#, LB# Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Min
Min
Max
Max
Max
Min
5
ns
ns
ns
ns
ns
ns
5
25
25
25
10
tBHZ
tOHZ
tOH
UB#s, LB#s Disable to High-Z Output
Output Disable to High-Z Output
Output Data Hold from Address Change
tRC
Address
tAA
tOH
Data Valid
Data Out
Previous Data Valid
Notes:
1. CE1#s = OE# = VIL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL
2. Do not access device with cycle timing shorter than tRC for continuous periods < 10 µs.
Figure 29. Pseudo SRAM Read Cycle—Address Controlled
52
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Read Cycle
tRC
Address
tAA
tCO1
tOH
CE#1s
CE2s
tCO2
tOE
tHZ
OE#
tOLZ
tBLZ
tLZ
tOHZ
Data Out
High-Z
Data Valid
Notes:
1. WE# = VIH.
2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than tRC for continuous periods < 10 µs.
Figure 30. Pseudo SRAM Read Cycle
December 12, 2003
Am49DL640AH
53
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
Write Cycle
Parameter
Symbol
All Speed
Options
Description
Unit
tWC
tCw
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Max
Min
Min
Min
70
55
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Enable to End of Write
Address Setup Time
tAS
tAW
tBW
tWP
tWR
tWHZ
tDW
tDH
Address Valid to End of Write
UB#s, LB#s to End of Write
Write Pulse Time
55
55
55
0
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
25
25
0
tOW
5
tWC
Address
CE1#s
CE2s
tWR
tCW
(See Note 1)
tAW
tCW
(See Note 1)
tWP
(See Note 4)
WE#
tAS
(See Note 3)
tDH
tDW
Data In
Data Out
High-Z
Data Valid
High-Z
tWHZ
tOW
Data Undefined
Notes:
1. WE# controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 31. Pseudo SRAM Write Cycle—WE# Control
54
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
tWC
Address
tAS (See Note 2 )
tCW
tWR (See Note 4)
(See Note 3)
CE1#s
tAW
CE2s
tBW
UB#s, LB#s
tWP
(See Note 5)
WE#
tDW
tDH
Data Valid
Data In
Data Out
High-Z
High-Z
Notes:
1. CE1#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE1#s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 32. Pseudo SRAM Write Cycle—CE1#s Control
December 12, 2003
Am49DL640AH
55
A D V A N C E I N F O R M A T I O N
PSEUDO SRAM AC CHARACTERISTICS
tWC
Address
CE1#s
tCW
(See Note 2)
tWR (See Note 3)
tAW
tCW (See Note 2)
CE2s
tBW
UB#s, LB#s
tAS
tWP
(See Note 4)
(See Note 5)
WE#
tDW
tDH
Data In
Data Out
Data Valid
High-Z
High-Z
Notes:
1. UB#s and LB#s controlled.
2. tCW is measured from CE1#s going low to the end of write.
3. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. tAS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (tWP) of low CE#1s and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The tWP is measured from the beginning of write
to the end of write.
Figure 33. Pseudo SRAM Write Cycle—
UB#s and LB#s Control
56
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
FLASH ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1) Max (Note 2)
Unit
sec
sec
µs
Comments
Sector Erase Time
Chip Erase Time
0.4
56
4
5
Excludes 00h programming
prior to erasure (Note 4)
Accelerated Word Program Time
Word Program Time
Chip Program Time
120
210
7
µs
Excludes system level
overhead (Note 5)
Word Mode
28
84
sec
(Note 3)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
12 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
PACKAGE PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Input Capacitance
Test Setup
VIN = 0
Typ
11
Max
14
Unit
pF
CIN
COUT
CIN2
Output Capacitance
VOUT = 0
VIN = 0
12
16
pF
Control Pin Capacitance
WP#/ACC Pin Capacitance
14
16
pF
CIN3
VIN = 0
17
20
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
FLASH DATA RETENTION
Parameter Description
Test Conditions
150°C
Min
10
Unit
Years
Years
Minimum Pattern Data Retention Time
125°C
20
December 12, 2003
Am49DL640AH
57
A D V A N C E I N F O R M A T I O N
PHYSICAL DIMENSIONS
FLJ073—73-Ball Fine-Pitch Grid Array 8 x 11.6 mm
A
D1
D
eD
0.15
(2X)
C
10
9
8
7
6
5
4
3
2
1
SE
7
E
B
E1
eE
L
J
H
G
F
E
D
C
B
A
M
K
INDEX MARK
10
PIN A1
CORNER
PIN A1
CORNER
7
SD
0.15
(2X)
C
TOP VIEW
SIDE VIEW
BOTTOM VIEW
0.20
0.08
C
C
A2
A
C
A1
6
73X
b
0.15
0.08
M
C
C
A B
M
NOTES:
PACKAGE
JEDEC
FLJ 073
N/A
1. DIMENSIONING AND TOLERANCING METHODS PER ASME
Y14.5M-1994.
11.60 mm x 8.00 mm
PACKAGE
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
SYMBOL
MIN
NOM
---
MAX
NOTE
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
A
A1
---
1.40
---
PROFILE
5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
0.25
0.95
---
BALL HEIGHT
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E"
DIRECTION.
A2
---
1.13
BODY THICKNESS
BODY SIZE
D
11.60 BSC.
8.00 BSC.
8.80 BSC.
7.20 BSC.
12
n IS THE NUMBER OF POPULATED SOLDER BALL
POSITIONS FOR MATRIX SIZE MD X ME.
E
BODY SIZE
D1
E1
MATRIX FOOTPRINT
MATRIX FOOTPRINT
6
7
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
MD
ME
n
MATRIX SIZE D DIRECTION
MATRIX SIZE E DIRECTION
BALL COUNT
10
73
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = 0.000.
φb
0.30
0.35
0.40
BALL DIAMETER
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
eE
0.80 BSC.
0.80 BSC.
0.40 BSC.
BALL PITCH
eD
SD / SE
BALL PITCH
8. "+" INDICATES THE THEORETICAL CENTER OF
DEPOPULATED BALLS.
SOLDER BALL PLACEMENT
A2,A3,A4,A5,A6,A7,A8,A9,B2,B3,B4,B7,B8,B9
9. NOT USED.
C2,C9,C10,D1,D10,E1,E10,F5,F6,G5,G6,H1,H10 DEPOPULATED SOLDER BALLS
J1,J10,K1,K2,K9,K10,L2,L3,L4,L7,L8,L9
10. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
M2,M3,M4,M5,M6,M7,M8,M9
3232 \ 16-038.14b
58
Am49DL640AH
December 12, 2003
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY
SRAM Data Retention
Revision A (September 13, 2002)
Removed information along with figures on CE#1s
controlled data retention mode and CE2s controlled
data retention mode.
Initial release.
Revision B (October 1, 2003)
Revision B+1 (November 24, 2003)
Global
Changed all references of Am49DL640AG to
Am49DL640AH.
Flash DC Characteristics - CMOS Compatible
Corrected DC test condition of VOL [IOL of Vol (Output
Low Voltage)]. See DC Characteristics - CMOS Com-
patible table.
Changed high performance access time from 70 to
55 ns
Modified manufacture process technology to 130 µm
Modified CompactCell to Pseudo.
Connection Diagram
Corrected pin H9 to NC.
Simultaneous Read/Write Operations with Zero
Latency
Command Definitions
Removed mention of byte in the command sequence.
See Table 12.
Modified SecSi Sector section.
Product Selector Guide Table
pSRAM DC & OPERATING CHARACTERISTICS
Added flash memory and pSRAM information.
Corrected pSRAM at Vcc = 3V with 100 µA.
Connection Diagram
Modified CompactCell SRAM only to pSRAM only.
Pin Description
Removed all mention of CC = CompactCell.
Ordering Information
Added new package marking and order number.
Table 6 & 9
Modified SA140, 1FH, and 21h.
Table 14
Added test condition speeds.
Flash DC Characteristics
Modified VLKO Min. section.
Flash AC Characteristics - Read Only Operations,
Word/Byte Configuration (Ciof), Erase and
Program Operations, and Alternate CE#f
Controlled Erase and Program Operations
Added new speed information.
New Sections
pSRAM DC & Operating Characteristics table
psRAM AC Characteristics
PSEUDO SRAM AC Characteristics - Power up Time
PSEUDO SRAM AC Characteristics - Read Cycle
PSEUDO SRAM AC Characteristics - Write Cycle
PSEUDO SRAM AC Characteristics
December 12, 2003
Am49DL640AH
59
A D V A N C E I N F O R M A T I O N
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
60
Am49DL640AH
December 12, 2003
Representatives in U.S. and Canada
Sales Offices and Representatives
ARIZONA,
North America
Tempe - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(480)839-2320
CALIFORNIA,
ALABAMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(256)830-9192
ARIZONA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(602)242-4400
CALIFORNIA,
Calabasas - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(818)878-5800
Irvine - Centaur . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (949)261-2123
San Diego - Centaur. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(858)278-4950
Santa Clara - Fourfront. . . . . . . . . . . . . . . . . . . . . . . . . . . .(408)350-4800
CANADA,
Burnaby, B.C. - Davetek Marketing. . . . . . . . . . . . . . . . . . . .(604)430-3680
Calgary,Alberta - Davetek Marketing. . . . . . . . . . . . . . . . .(403)283-3577
Kanata, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . . . .(613)592-9540
Mississauga, Ontario - J-Squared Tech. . . . . . . . . . . . . . . . . .(905)672-2030
St Laurent, Quebec - J-Squared Tech. . . . . . . . . . . . . . . . ( 5 1 4 ) 74 7 - 1 2 1 1
COLORADO,
Irvine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(949)450-7500
Sunnyvale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(408)732-2400
COLORADO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(303)741-2900
CONNECTICUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(203)264-7800
FLORIDA,
Clearwater . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(727)793-0055
Miami (Lakes) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 3 0 5 ) 8 2 0 - 1 1 1 3
GEORGIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(770)814-0224
ILLINOIS,
Chicago . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(630)773-4422
MASSACHUSETTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (781)213-6400
MICHIGAN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(248)471-6294
MINNESOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(612)745-0005
NEW JERSEY,
Chatham . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 97 3 ) 7 0 1 - 1 7 7 7
NEWYORK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(716)425-8050
NORTH CAROLINA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(919)840-8080
OREGON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(503)245-0080
PENNSYLVANIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 2 1 5 ) 3 4 0 - 1 1 8 7
SOUTH DAKOTA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(605)692-5777
TEXAS,
Golden - Compass Marketing . . . . . . . . . . . . . . . . . . . . . .(303)277-0456
FLORIDA,
Melbourne - Marathon Technical Sales . . . . . . . . . . . . . . . .(321)728-7706
Ft. Lauderdale - Marathon Technical Sales . . . . . . . . . . . . . .(954)527-4949
Orlando - Marathon Technical Sales . . . . . . . . . . . . . . . . . .(407)872-5775
St. Petersburg - Marathon Technical Sales . . . . . . . . . . . . . .(727)894-3603
GEORGIA,
Duluth - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . (678)584-1128
ILLINOIS,
Skokie - Industrial Reps, Inc. . . . . . . . . . . . . . . . . . . . . . . . .(847)967-8430
INDIANA,
Kokomo - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (765)457-7241
IOWA,
Cedar Rapids - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . (319)294-1000
KANSAS,
Lenexa - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . ( 9 1 3 ) 4 69 - 1 3 1 2
MASSACHUSETTS,
Austin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (512)346-7830
Dallas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(972)985-1344
Houston . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(281)376-8084
VIRGINIA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(703)736-9568
Burlington - Synergy Associates . . . . . . . . . . . . . . . . . . . . .(781)238-0870
MICHIGAN,
Brighton - SAI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .(810)227-0007
MINNESOTA,
St. Paul - Cahill, Schmitz & Cahill, Inc. . . . . . . . . . . . . . . . . .(651)699-0200
MISSOURI,
St. Louis - Lorenz Sales . . . . . . . . . . . . . . . . . . . . . . . . . . (314)997-4558
NEW JERSEY,
International
AUSTRALIA, North Ryde . . . . . . . . . . . . . . . . . . . . . . .TEL(61)2-88-777-222
BELGIUM,Antwerpen . . . . . . . . . . . . . . . . . . . . . . . .TEL(32)3-248-43-00
BRAZIL, San Paulo . . . . . . . . . . . . . . . . . . . . . . . . . . TEL(55)11-5501-2105
CHINA,
Beijing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(86)10-6510-2188
Shanghai . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(86)21-635-00838
Shenzhen . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(86)755-246-1550
FINLAND, Helsinki . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 5 8 ) 8 8 1 - 3 1 1 7
FRANCE, Paris . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 3 ) - 1 - 4 975 1 0 1 0
GERMANY,
Bad Homburg . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(49)-6172-92670
Munich . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 4 9 ) - 8 9 - 4 5 0 5 3 0
HONG KONG, Causeway Bay . . . . . . . . . . . . . . . . . . .TEL(85)2-2956-0388
ITALY, Milan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 3 9 ) - 0 2 - 3 8 1 9 6 1
INDIA, New Delhi . . . . . . . . . . . . . . . . . . . . . . . . . . T E L ( 9 1 ) 1 1 - 62 3 - 8 62 0
JAPAN,
es
Mt. Laurel - SJ Associates . . . . . . . . . . . . . . . . . . . . . . . . .(856)866-1234
NEWYORK,
Buffalo - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . ( 7 1 6 ) 74 1 - 7 1 1 6
East Syracuse - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . (315)437-8343
Pittsford - Nycom, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . . (716)586-3660
Rockville Centre - SJ Associates . . . . . . . . . . . . . . . . . . . . (516)536-4242
NORTH CAROLINA,
Raleigh - Quantum Marketing . . . . . . . . . . . . . . . . . . . . . .(919)846-5728
OHIO,
Middleburg Hts - Dolfuss Root & Co. . . . . . . . . . . . . . . . . (440)816-1660
Powell - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . . . (614)781-0725
Vandalia - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . . . .(937)898-9610
Westerville - Dolfuss Root & Co. . . . . . . . . . . . . . . . . . . (614)523-1990
OREGON,
Lake Oswego - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . .(503)670-0557
UTAH,
Murray - Front Range Marketing . . . . . . . . . . . . . . . . . . . .(801)288-2500
VIRGINIA,
Osaka . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(81)6-6243-3250
Tokyo . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(81)3-3346-7600
KOREA, Seoul . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(82)2-3468-2600
RUSSIA, Moscow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(7)-095-795-06-22
SWEDEN, Stockholm . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(46)8-562-540-00
TAIWAN,Taipei . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(886)2-8773-1555
UNITED KINGDOM,
Frimley . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(44)1276-803100
Haydock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TEL(44)1942-272888
Glen Burnie - Coherent Solution, Inc. . . . . . . . . . . . . . . . . ( 4 1 0 ) 76 1 - 2 2 5 5
WASHINGTON,
Kirkland - I Squared, Inc. . . . . . . . . . . . . . . . . . . . . . . . . . .(425)822-9220
WISCONSIN,
Pewaukee - Industrial Representatives . . . . . . . . . . . . . . . .(262)574-9393
Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance
characteristics listed in this document are guaranteed by specific tests, guard banding,
design and other practices common to the industry. For specific testing details, contact
your local AMD sales representative.The company assumes no responsibility for the use of
any circuits described herein.
Representatives in Latin America
ARGENTINA,
Capital Federal Argentina/WW Rep. . . . . . . . . . . . . . . . . . . .54-11)4373-0655
CHILE,
Santiago - LatinRep/WWRep. . . . . . . . . . . . . . . . . . . . . . . . . .(+562)264-0993
COLUMBIA,
Bogota - Dimser. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ( 5 7 1 ) 4 1 0 - 4 1 8 2
MEXICO,
Guadalajara - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . .(523)817-3900
Mexico City - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . .(525)752-2727
Monterrey - LatinRep/WW Rep. . . . . . . . . . . . . . . . . . . . .(528)369-6828
PUERTO RICO,
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only
and may be trademarks of their respective companies.
Boqueron - Infitronics. . . . . . . . . . . . . . . . . . . . . . . . . . . .(787)851-6000
One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com
©2003 Advanced Micro Devices, Inc.
01/03
Printed in USA
相关型号:
AM49DL640AH56IS
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
SPANSION
AM49DL640AH56IT
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
SPANSION
AM49DL640AH70IS
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
SPANSION
AM49DL640AH70IT
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
SPANSION
AM49DL640AH85IS
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
SPANSION
AM49DL640AH85IT
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
SPANSION
©2020 ICPDF网 联系我们和版权申明