AM29LV800BB-120DGC2 [SPANSION]
Flash, 512KX16, 120ns, DIE-44;
| 型号： | AM29LV800BB-120DGC2 |
| 厂家： | 
SPANSION |
| 描述： | Flash, 512KX16, 120ns, DIE-44 内存集成电路 |
| 文件： | 总12页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Am29LV800B
Known Good Die
Data Sheet
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SUPPLEMENT
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory—Die Revision 2
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ Embedded Algorithms
— 2.7 to 3.6 V for read, program, and erase
operations
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Ideal for battery-powered applications
■ Manufactured on 0.32 µm process technology
■ High performance
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee
— 80, 90, or 120 ns access time
per sector
■ Low power consumption (typical values at
■ Compatibility with JEDEC standards
5 MHz)
— Pinout and software compatible with single-
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— 15 mA program/erase current
— Provides a software method of detecting program
■ Flexible sector architecture
or erase operation completion
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
■ Ready/Busy# pin (RY/BY#)
fifteen 64 Kbyte sectors (byte mode)
— Provides a hardware method of detecting
— One 8 Kword, two 4 Kword, one 16 Kword, and
program or erase cycle completion
fifteen 32 Kword sectors (word mode)
— Supports full chip erase
■ Erase Suspend/Erase Resume
— Sector Protection features:
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
■ Hardware reset pin (RESET#)
Sectors can be locked in-system or via
programming equipment
— Hardware method to reset the device to reading
array data
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ 20-year data retention at 125°C
■ Tested to datasheet specifications at
■ Unlock Bypass Program Command
temperature
— Reduces overall programming time when issuing
■ Quality and reliability levels equivalent to
multiple program command sequences
standard packaged components
■ Top or bottom boot block configurations
available
Publication# 21356 Rev: E Amendment/0
Issue Date: March 12, 2002
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29LV800B in Known Good Die (KGD) form is
an 8 Mbit, 3.0 volt-only Flash memory. AMD defines
KGD as standard product in die form, tested for function-
ality and speed. AMD KGD products have the same reli-
ability and quality as AMD products in packaged form.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
Am29LV800B Features
The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The word-wide data (x16) appears on DQ15–
DQ0; the byte-wide (x8) data appears on DQ7–DQ0.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. No VPP is required for
program or erase operations. The device can also be
programmed in standard EPROM programmers.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tun-
neling. The data is programmed using hot electron injec-
tion.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Electrical Specifications
Refer to the Am29LV800B data sheet, publication
number 21490, for full electrical specifications on the
Am29LV800B in KGD form.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
2
Am29LV800B Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV800B KGD
Speed Option (V
= 2.7 – 3.6 V)
-80
80
80
30
-90
90
90
35
-120
120
120
50
CC
Max Access Time, tACC (ns)
Max CE# Access, tCE (ns)
Max OE# Access, tOE (ns)
DIE PHOTOGRAPH
DIE PAD LOCATIONS
36
9
8
7
6
5
4
3
2
1
44 43 42 41 40 39 38 37
35
34
33
10
11
12
AMD logo location
13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Am29LV800B Known Good Die
3
S U P P L E M E N T
PAD DESCRIPTION
Pads relative to die center.
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
X
Y
1
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A–1
VSS
–0.90
–13.00
–18.90
–24.80
–30.70
–36.50
–42.40
–48.30
–54.20
–63.60
–63.60
–63.60
–63.30
–57.40
–52.00
–46.20
–40.70
–34.90
–29.50
–23.60
–18.10
–8.60
8.70
127.50
127.50
127.50
127.50
127.50
127.50
127.50
127.50
127.50
125.90
115.80
–0.02
–0.33
–0.48
–0.63
–0.78
–0.93
–1.08
–1.23
–1.38
–1.62
–1.62
–1.62
–1.61
–1.46
–1.32
–1.17
–1.03
–0.89
–0.75
–0.60
–0.46
–0.22
0.22
3.24
2
3.24
3
3.24
4
3.24
5
3.24
6
3.24
7
3.24
8
3.24
9
3.24
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
3.20
BYTE#
A16
2.94
105.70
–126.00
–126.00
–126.00
–126.00
–126.00
–126.00
–125.80
–126.00
–126.00
–129.80
–129.80
–126.00
–126.00
–126.00
–126.00
–126.00
–126.00
–126.00
–126.00
–126.00
105.50
115.60
2.68
A15
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.30
–3.30
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
–3.20
2.68
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
A18
18.20
23.70
29.50
34.90
40.70
46.20
52.00
57.40
63.30
63.60
63.60
63.60
54.20
46.60
40.70
34.90
28.90
23.10
17.20
11.40
0.46
A17
0.60
A7
0.75
A6
0.89
A5
1.03
A4
1.17
A3
1.32
A2
1.46
A1
1.61
A0
1.62
CE#
VSS
1.62
2.94
125.70
129.60
127.50
127.50
127.50
127.50
127.50
127.50
127.50
127.50
1.62
3.19
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1.38
3.29
1.18
3.24
1.03
3.24
0.89
3.24
0.73
3.24
0.59
3.24
0.44
3.24
0.29
3.24
5.40
0.14
3.24
Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
4
Am29LV800B Known Good Die
S U P P L E M E N T
PAD DESCRIPTION
Pads relative to VCC
.
Pad Center (mils)
Pad Center (millimeters)
Pad
Signal
X
Y
0.00
X
Y
1
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A–1
VSS
0.00
0.0000
–0.3073
–0.4572
–0.6071
–0.7569
–0.9042
–1.0541
–1.2040
–1.3538
–1.5926
–1.5926
–1.5926
–1.5850
–1.4351
–1.2979
–1.1506
–1.0109
–0.8636
–0.7264
–0.5766
–0.4369
–0.1956
0.2438
0.4851
0.6248
0.7722
0.9093
1.0566
1.1963
1.3437
1.4808
1.6307
1.6383
1.6383
1.6383
1.3995
1.2065
1.0566
0.9093
0.7569
0.6096
0.4597
0.3124
0.1600
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
–0.0406
–0.2972
–0.5537
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–6.4338
–6.4389
–6.4389
–6.5354
–6.5354
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–6.4389
–0.5588
–0.3023
–0.0457
0.0533
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
0.0000
2
–12.10
–18.00
–23.90
–29.80
–35.60
–41.50
–47.40
–53.30
–62.70
–62.70
–62.70
–62.40
–56.50
–51.10
–45.30
–39.80
–34.00
–28.60
–22.70
–17.20
–7.70
9.60
0.00
3
0.00
4
0.00
5
0.00
6
0.00
7
0.00
8
0.00
9
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
–1.60
BYTE#
A16
–11.70
–21.80
–253.50
–253.50
–253.50
–253.50
–253.50
–253.50
–253.30
–253.50
–253.50
–257.30
–257.30
–253.50
–253.50
–253.50
–253.50
–253.50
–253.50
–253.50
–253.50
–253.50
–22.00
–11.90
–1.80
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
A18
19.10
24.60
30.40
35.80
41.60
47.10
52.90
58.30
64.20
64.50
64.50
64.50
55.10
47.50
41.60
35.80
29.80
24.00
18.10
12.30
6.30
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
2.10
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Am29LV800B Known Good Die
5
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29LV800B
T
-80
DP
C
2
DIE REVISION
This number refers to the specific AMD manufacturing process and product
technology reflected in this document. It is entered in the revision field of AMD
standard product nomenclature.
TEMPERATURE RANGE
C
I
=
=
Commercial (0°C to +70°C)
Industrial (–40°C to +85°C)
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
DG
DT
=
=
=
=
Waffle Pack
140 die per 5 tray stack
Gel-Pak® Die Tray
462 die per 6 tray stack
Surftape™ (Tape and Reel)
2500 per 7-inch reel
DW
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV800B Known Good Die
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory—Die Revision 2
3.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
AM29LV800BT-80
AM29LV800BB-80
DPC 2, DPI 2,
AM29LV800BT-90
AM29LV800BB-90
DGC 2, DGI 2,
DTC 2, DTI 2,
DWC 2, DWI 2
AM29LV800BT-120
AM29LV800BB-120
6
Am29LV800B Known Good Die
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
Orientation relative to
leading edge of tape
and reel
AMD logo location
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
AMD logo location
Am29LV800B Known Good Die
7
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29LV800B product qualification database supple-
ment for KGD. AMD implements quality assurance pro-
cedures throughout the product test flow. In addition,
an off-line quality monitoring program (QMP) further
guarantees AMD quality standards are met on Known
Good Die products. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
8
Am29LV800B Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 140 mils x 279 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 3.56 mm x 7.09 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Manufacturing ID (Top Boot). . . . . . . . . . . . 98H02AK
(Bottom Boot). . . . . . . . 98H02ABK
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pad Area Free of Passivation . . . . . . . . . .13.99 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
SPECIAL HANDLING INSTRUCTIONS
Processing
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .2.7 V to 3.6 V
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Am29LV800B Known Good Die
9
S U P P L E M E N T
RESPECT TO THE DIE’S PROCESSING OF DATE
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
DATA, AND SHALL HAVE NO LIABILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-
TICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSI-
BILITY OF SUCH DAMAGES.
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-
ENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT,
OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective mate-
rials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for
environmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unau-
thorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replace-
ment Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original pur-
chase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instruc-
tions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the
above-referenced Warranty Exclusions. Buyer shall
ship such defective Die to AMD via AMD’s carrier, col-
lect. Risk of loss will transfer to AMD when the defec-
tive Die is provided to AMD’s carrier. If Buyer fails to
adhere to these warranty returns guidelines, Buyer
shall assume all risk of loss and shall pay for all freight
to AMD’s specified location. The aforementioned pro-
visions do not extend the original warranty period of
any Known Good Die that has either been repaired or
replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reason-
ably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applica-
tions is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
10
Am29LV800B Known Good Die
S U P P L E M E N T
REVISION SUMMARY
Revision A (March 1997)
Initial release.
Terms and Conditions
Replaced warranty with new version.
Revision D (December 1998)
Revision B (January 1998)
Packaging Information
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet. Updated for CS39
process technology.
Added section. Moved orientation information from die
photograph into this section.
Revision D+1 (June 14, 1999)
Revision B+1 (March 1998)
Physical Specifications
Distinctive Characteristics
Corrected the bond pad dimensions. Deleted Si from
the bond pad metalization specification.
Changed read and program/erase current to match
data sheet.
Revision D+2 (July 2, 1999)
Pad Description
Ordering Information
Corrected signal names for pads 13–44. Replaced
values for all pad coordinates.
The quantities for each packaging type is now listed.
Contacting AMD for this information is no longer
required.
Revision C (November 1998)
Die Photograph, Pad Description, Ordering
Information, Physical Specifications,
Manufacturing Information
Revision E (March 12, 2002)
Global
Added 80 ns speed.
Updated for CS39S process technology.
Pad Description
Ordering Information
Added table of pad locations relative to die center.
Changed waffle pack quantity to 140. Changed valid
combinations to reflect die revision 2.
Manufacturing Information
Changed test facility to Penang, Malaysia (ACN2016).
Trademarks
Copyright © 2002 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
Am29LV800B Known Good Die
11
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