AM29F800BB-90DTE2 [SPANSION]

Flash, 512KX16, 90ns, DIE-44;


型号：	AM29F800BB-90DTE2
厂家：	SPANSION
描述：	Flash, 512KX16, 90ns, DIE-44 内存集成电路
文件：	总12页 (文件大小：400K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Am29F800B Known Good Die

Data Sheet (Retired Product)

Am29F800B Known Good Die Cover Sheet

This product has been retired and is not recommended for designs. Please contact your Spansion representative for

alternates. Availability of this document is retained for reference and historical purposes only.

The following document contains information on Spansion memory products.

Continuity of Specifications

There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been

made are the result of normal data sheet improvement and are noted in the document revision summary.

For More Information

Please contact your local sales office for additional information about Spansion memory solutions.

Publication Number 21631

Revision C

Amendment 4

Issue Date March 3, 2009

D a t a S h e e t ( R e t i r e d P r o d u c t )

This page left intentionally blank.

Am29F800B Known Good Die

21631_C4 March 3, 2009

SUPPLEMENT

Am29F800B Known Good Die

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 2

This product has been retired and is not recommended for designs. Please contact your Spansion representative

for alternates. Availability of this document is retained for reference and historical purposes only.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 5.0 Volt-only operation for read, erase, and

program operations

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Minimizes system level requirements

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F800 device

■ Minimum 1,000,000 write cycles per sector

■ High performance

guaranteed

— 90 or 120 ns access time

■ Compatibility with JEDEC standards

■ Low power consumption (typical values at

— Pinout and software compatible with single-

power-supply Flash

5 MHz)

— 1 µA standby mode current

— Superior inadvertent write protection

— 20 mA read current (byte mode)

— 28 mA read current (word mode)

— 30 mA program/erase current

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Flexible sector architecture

■ Ready/Busy# pin (RY/BY#)

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— Provides a hardware method of detecting

program or erase cycle completion

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

Sectors can be locked via programming

equipment

■ 20-year data retention at 125°C

■ Tested to datasheet specifications at

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

temperature

■ Quality and reliability levels equivalent to

■ Top or bottom boot block configurations

standard packaged components

available

Publication# 21631 Rev: C Amendment/4

Issue Date: March 3, 2009

S U P P L E M E N T

GENERAL DESCRIPTION

The Am29F800B in Known Good Die (KGD) form is a

8 Mbit, 5.0 volt-only Flash memory. AMD defines KGD

as standard product in die form, tested for functionality

and speed. AMD KGD products have the same reli-

ability and quality as AMD products in packaged form.

programs the array (if it is not already programmed) be-

fore executing the erase operation. During erase, the

device automatically times the erase pulse widths and

verifies proper cell margin.

The host system can detect whether a program or

erase operation is complete by observing the RY/BY#

pin, or by reading the DQ7 (Data# Polling) and DQ6

(toggle) status bits. After a program or erase cycle

has been completed, the device is ready to read array

data or accept another command.

Am29F800B Features

The Am29F800B is an 8 Mbit, 5.0 volt-only Flash

memory organized as 1,048,576 bytes or 524,288

words. The word-wide data (x16) appears on

DQ15–DQ0; the byte-wide (x8) data appears on

DQ7–DQ0. This device is designed to be programmed

The sector erase architecture allows memory sectors

to be erased and reprogrammed without affecting the

data contents of other sectors. The device is fully

erased when shipped from the factory.

in-system with the standard system 5.0 volt V

supply. A 12.0 V V is not required for write or erase

operations. The device can also be programmed in

standard EPROM programmers.

Hardware data protection measures include a low

This device is manufactured using AMD’s 0.32 µm

process technology, and offers all the features and

benefits of the Am29F800, which was manufactured

using 0.5 µm process technology.

detector that automatically inhibits write opera-

tions during power transitions. The hardware sector

protection feature disables both program and erase

operations in any combination of the sectors of mem-

ory. This can be achieved via programming equipment.

To eliminate bus contention the device has separate

chip enable (CE#), write enable (WE#) and output

enable (OE#) controls.

The Erase Suspend feature enables the user to put

erase on hold for any period of time to read data from,

or program data to, any sector that is not selected for

erasure. True background erase can thus be achieved.

The device requires only a single 5.0 volt power sup-

ply for both read and write functions. Internally gener-

ated and regulated voltages are provided for the

program and erase operations.

The hardware RESET# pin terminates any operation

in progress and resets the internal state machine to

reading array data. The RESET# pin may be tied to the

system reset circuitry. A system reset would thus also

reset the device, enabling the system microprocessor

to read the boot-up firmware from the Flash memory.

The device is entirely command set compatible with the

JEDEC single-power-supply Flash standard. Com-

mands are written to the command register using stan-

dard microprocessor write timings. Register contents

serve as input to an internal state-machine that con-

trols the erase and programming circuitry. Write cycles

also internally latch addresses and data needed for the

programming and erase operations. Reading data out

of the device is similar to reading from other Flash or

EPROM devices.

The system can place the device into the standby

mode. Power consumption is greatly reduced in

this mode.

AMD’s Flash technology combines years of Flash

memory manufacturing experience to produce the

highest levels of quality, reliability and cost effective-

ness. The device electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tunneling.

The data is programmed using hot electron injection.

Device programming occurs by executing the program

command sequence. This initiates the Embedded

Program algorithm—an internal algorithm that auto-

matically times the program pulse widths and verifies

proper cell margin.

Electrical Specifications

Refer to the Am29F800B data sheet, PID 21504, for

full electrical specifications on the Am29F800B in

KGD form.

Device erasure occurs by executing the erase com-

mand sequence. This initiates the Embedded Erase

algorithm—an internal algorithm that automatically pre-

Am29F800B Known Good Die

S U P P L E M E N T

PRODUCT SELECTOR GUIDE

Family Part Number

Am29F800B KGD

Speed Option (V

= 5.0 V ± 10%)

-90

-120

120

Max access time, ns (t_ACC

)

Max CE# access time, ns (t_CE

)

Max OE# access time, ns (t_OE

)

DIE PHOTOGRAPH

DIE PAD LOCATIONS

44 43 42 41 40 39 38 37 36

AMD logo location

14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

Am29F800B Known Good Die

S U P P L E M E N T

PAD DESCRIPTION

Pad Center (mils)

Pad Center (millimeters)

Pad

Signal

0.00

V_CC

DQ4

DQ12

DQ5

DQ13

DQ6

DQ14

DQ7

DQ15/A-1

V_SS

0.00

0.0000

–0.1743

–0.3246

–0.4728

–0.6231

–0.7713

–0.9216

–1.0698

–1.2201

–1.4143

–1.4599

–1.4510

–1.3028

–1.1651

–1.0169

–0.8791

–0.7309

–0.5932

–0.4426

–0.3049

–0.0614

0.2411

0.4841

0.6219

0.7701

0.9078

1.0560

1.1938

1.3420

1.4797

1.6279

1.6368

1.3956

1.2031

1.0528

0.9046

0.7543

0.6061

0.4558

0.3076

0.1573

0.0000

0.0343

–0.1651

–0.4582

–6.7536

–6.7473

–6.7536

–6.8493

–6.7536

–0.4582

–0.1651

0.0964

0.0578

0.0000

–6.86

–12.78

–18.61

–24.53

–30.37

–36.28

–42.12

–48.03

–55.68

–57.48

–57.13

–51.29

–45.87

–40.03

–34.61

–28.78

–23.35

–17.43

–12.00

–2.42

9.49

0.00

1.35

BYTE#

A16

–6.50

–18.04

–265.89

–265.64

–265.89

–269.66

–265.89

–18.04

–6.50

A15

A14

A13

A12

A11

A10

WE#

RESET#

RY/BY#

A18

19.06

24.48

30.32

35.74

41.58

47.00

52.83

58.26

64.09

64.44

54.95

47.37

41.45

35.61

29.70

23.86

17.95

12.11

6.19

A17

CE#

V_SS

3.80

OE#

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

2.27

0.00

Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.

Am29F800B Known Good Die

S U P P L E M E N T

ORDERING INFORMATION

Standard Products

AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is

formed by a combination of the following:

Am29F800B

-90

DIE REVISION

This number refers to the specific AMD manufacturing process and

product technology reflected in this document. It is entered in the

revision field of AMD standard product nomenclature.

TEMPERATURE RANGE

Commercial (0°C to +70°C)

Industrial (–40°C to +85°C)

Extended (–55°C to +125°C)

PACKAGE TYPE AND

MINIMUM ORDER QUANTITY

Waffle Pack

140 die per 5 tray stack

Surftape™ (Tape and Reel)

1600 per 7-inch reel

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

Top sector

Bottom sector

DEVICE NUMBER/DESCRIPTION

Am29F800B Known Good Die

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory—Die Revision 2

5.0 Volt-only Program and Erase

Valid Combinations

Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD

sales office to confirm availability of specific valid combinations and to check on newly released combinations.

Valid Combinations

AM29F800BT-90,

AM29F800BB-90,

DPC 2, DPI 2, DPE 2,

DTC 2, DTI 2, DTE 2,

AM29F800BT-120

AM29F800BB-120

Am29F800B Known Good Die

S U P P L E M E N T

PACKAGING INFORMATION

Surftape Packaging

Direction of Feed

Orientation relative to

leading edge of tape

and reel

AMD logo location

Waffle Pack Packaging

Orientation relative to

top left corner of

Waffle Pack

cavity plate

AMD logo location

Am29F800B Known Good Die

S U P P L E M E N T

PRODUCT TEST FLOW

Figure 1 provides an overview of AMD’s Known Good

Die test flow. For more detailed information, refer to the

Am29F800B product qualification database supple-

ment for KGD. AMD implements quality assurance pro-

cedures throughout the product test flow. In addition,

an off-line quality monitoring program (QMP) further

guarantees AMD quality standards are met on Known

Good Die products. These QA procedures also allow

AMD to produce KGD products without requiring or

implementing burn-in.

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 1

Data Retention

Bake

24 hours at 250°C

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 2

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 3

High Temperature

Speed

Incoming Inspection

Wafer Saw

Die Separation

100% Visual Inspection

Die Pack

Packaging for Shipment

Shipment

Figure 1. AMD KGD Product Test Flow

Am29F800B Known Good Die

S U P P L E M E N T

PHYSICAL SPECIFICATIONS

MANUFACTURING INFORMATION

Die Dimensions . . . . . . . . . . . . . . 135 mils x 292 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . .3.43 mm x 7.42 mm

Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . FASL

Wafer Sort Test . . . . . . . . . . . . . .Sunnyvale, CA, USA

. . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia

Die Thickness. . . . . . . . . . . . . . . . . . . . . . . ~19.7 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ~500 µm

Manufacturing ID (Top Boot) . . . . . . . . . . . 98H05AK

(Bottom Boot) . . . . . . . 98H05ABK

Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils

. . . . . . . . . . . . . . . . . . . . . . . . . .115.9 µm x 115.9 µm

Preparation for Shipment . . . . . . . . Penang, Malaysia

Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S

Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Pad Area Free of Passivation . . . . . . . . . .13.99 mils

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9025 µm

Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44

Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu

SPECIAL HANDLING INSTRUCTIONS

Processing

Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,

may be grounded (optional)

Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride

Do not expose KGD products to ultraviolet light or

process them at temperatures greater than 250°C.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For best

yield, AMD recommends assembly in a Class 10K

clean room with 30% to 60% relative humidity.

DC OPERATING CONDITIONS

(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V

Junction Temperature Under Bias . .T (max) = 130°C

Storage

Operating Temperature

Store at a maximum temperature of 30°C in a nitrogen-

purged cabinet or vacuum-sealed bag. Observe all

standard ESD handling procedures.

Commercial . . . . . . . . . . . . . . . . . . . 0°C to +70°C

Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C

Am29F800B Known Good Die

S U P P L E M E N T

WITHOUT LIMITING THE FOREGOING, EXCEPT TO

TERMS AND CONDITIONS OF SALE FOR

AMD NON-VOLATILE MEMORY DIE

THE EXTENT THAT AMD EXPRESSLY WARRANTS

TO BUYER IN A SEPARATE AGREEMENT SIGNED

BY AMD, AMD MAKES NO WARRANTY WITH

RESPECT TO THE DIE’S PROCESSING OF DATE

DATA, AND SHALL HAVE NO LIABILITY FOR

DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR

ANY OTHER THEORY, DUE TO THE FAILURE OF

SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-

TICULAR DATA CONTAINING DATES, INCLUDING

DATES IN AND AFTER THE YEAR 2000, WHETHER

OR NOT AMD RECEIVED NOTICE OF THE POSSI-

BILITY OF SUCH DAMAGES.

All transactions relating to unpackaged die under this

agreement shall be subject to AMD’s standard terms

and conditions of sale, or any revisions thereof, which

revisions AMD reserves the right to make at any time

and from time to time. In the event of conflict between

the provisions of AMD’s standard terms and conditions

of sale and this agreement, the terms of this agreement

shall be controlling.

AMD warrants unpackaged die of its manufacture

(“Known Good Die” or “Die”) against defective mate-

rials or workmanship for a period of one (1) year from

date of shipment. This warranty does not extend

beyond the first purchaser of said Die. Buyer assumes

full responsibility to ensure compliance with the

appropriate handling, assembly and processing of

Known Good Die (including but not limited to proper

Die preparation, Die attach, wire bonding and related

assembly and test activities), and compliance with all

guidelines set forth in AMD’s specifications for Known

Good Die, and AMD assumes no responsibility for

environmental effects on Known Good Die or for any

activity of Buyer or a third party that damages the Die

due to improper use, abuse, negligence, improper

installation, accident, loss, damage in transit, or unau-

thorized repair or alteration by a person or entity other

than AMD (“Warranty Exclusions”).

THIS WARRANTY IS EXPRESSED IN LIEU OF ALL

OTHER WARRANTIES, EXPRESSED OR IMPLIED,

INCLUDING THE IMPLIED WARRANTY OF FITNESS

FOR A PARTICULAR PURPOSE, THE IMPLIED

WARRANTY OF MERCHANTABILITY AND OF ALL

OTHER OBLIGATIONS OR LIABILITIES ON AMD’s

PART, AND IT NEITHER ASSUMES NOR AUTHO-

RIZES ANY OTHER PERSON TO ASSUME FOR

AMD ANY OTHER LIABILITIES. THE FOREGOING

CONSTITUTES THE BUYER’S SOLE AND EXCLU-

SIVE REMEDY FOR THE FURNISHING OF DEFEC-

TIVE OR NON CONFORMING KNOWN GOOD DIE

AND AMD SHALL NOT IN ANY EVENT BE LIABLE

FOR INCREASED MANUFACTURING COSTS,

DOWNTIME COSTS, DAMAGES RELATING TO

BUYER’S PROCUREMENT OF SUBSTITUTE DIE

(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-

ENUES OR GOODWILL, LOSS OF USE OF OR

DAMAGE TO ANY ASSOCIATED EQUIPMENT, OR

ANY OTHER INDIRECT, INCIDENTAL, SPECIAL

OR CONSEQUENTIAL DAMAGES BY REASON OF

THE FACT THAT SUCH KNOWN GOOD DIE SHALL

HAVE BEEN DETERMINED TO BE DEFECTIVE OR

NON CONFORMING.

The liability of AMD under this warranty is limited, at

AMD’s option, solely to repair the Die, to send replace-

ment Die, or to make an appropriate credit adjustment

or refund in an amount not to exceed the original pur-

chase price actually paid for the Die returned to AMD,

provided that: (a) AMD is promptly notified by Buyer in

writing during the applicable warranty period of any

defect or nonconformity in the Known Good Die; (b)

Buyer obtains authorization from AMD to return the

defective Die; (c) the defective Die is returned to AMD

by Buyer in accordance with AMD’s shipping instruc-

tions set forth below; and (d) Buyer shows to AMD’s

satisfaction that such alleged defect or nonconformity

actually exists and was not caused by any of the

above-referenced Warranty Exclusions. Buyer shall

ship such defective Die to AMD via AMD’s carrier, col-

lect. Risk of loss will transfer to AMD when the defec-

tive Die is provided to AMD’s carrier. If Buyer fails to

adhere to these warranty returns guidelines, Buyer

shall assume all risk of loss and shall pay for all freight

to AMD’s specified location. The aforementioned pro-

visions do not extend the original warranty period of

any Known Good Die that has either been repaired or

replaced by AMD.

Buyer agrees that it will make no warranty representa-

tions to its customers which exceed those given by

AMD to Buyer unless and until Buyer shall agree to

indemnify AMD in writing for any claims which exceed

AMD’s warranty.

Known Good Die are not designed or authorized for

use as components in life support appliances, devices

or systems where malfunction of the Die can reason-

ably be expected to result in a personal injury. Buyer’s

use of Known Good Die for use in life support applica-

tions is at Buyer’s own risk and Buyer agrees to fully

indemnify AMD for any damages resulting in such use

or sale.

Am29F800B Known Good Die

S U P P L E M E N T

REVISION SUMMARY

Revision A (January 1998)

Initial release.

Terms and Conditions

Replaced warranty with new version.

Revision C (December 1998)

Revision A+1, A+2 (February & April 1998)

Ordering Information

Distinctive Characteristics

Changed Gel-Pak quantity to 396. Changed Valid

Combinations to reflect die revision 2.

Changed typical program/erase time to 30 mA to match

the CMOS DC Characteristics table in the Am29F400B

full data sheet.

Packaging Information

The minimum guarantee per sector is now 1 million cycles.

Added section. Moved orientation information from die

photograph section into this section.

Pad Description

Revision C+1 (June 14, 1999)

Corrected the following dimensions:

Physical Specifications

X (mils): pads 15, 18, 36

Y (mils): pads 10–12, 35, 36

Corrected the bond pad dimensions. Deleted Si from

the bond pad metalization specification.

X (mm): pads 2–22, 37, 38

Y (mm): pads 10–12, 23–32, 35, 36

Revision C+2 (June 27, 2001)

Manufacturing Information

Physical Specifications

Changed die thickness specification to ~20 mils.

Added Penang, Malaysia as a test facility (ACN2016).

Revision A+3 (May 1998)

Die Pad Locations

Revision C+3 (July 27, 2007)

Ordering Information

Corrected the location of the AMD logo from above pad

13 to above pad 23.

Removed package type options DG and DW

Packaging Information

Revision B (November 1998)

Removed all references to Gel-Pak

Distinctive Characterisitics, General Description,

Pad Description, Ordering Information, Physical

Specifications, Manufacturing Information

Revision C4 (March 3, 2009)

Global

Updated for CS39S process technology.

Added obsolescence information.

Colophon

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as

contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the

public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,

aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for

any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to

you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor

devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design

measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal

operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under

the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,

the prior authorization by the respective government entity will be required for export of those products.

Trademarks and Notice

The contents of this document are subject to change without notice. This document may contain information on a Spansion product under

development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this

document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,

merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any

damages of any kind arising out of the use of the information in this document.

trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks

of their respective companies.

ORNAND2^™, HD-SIM^™, EcoRAM^™and combinations thereof, are trademarks of Spansion LLC in the US and other countries. Other names

used are for informational purposes only and may be trademarks of their respective owners.

Am29F800B Known Good Die

AM29F800BB-90DTE2 [SPANSION]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E