AM29F160DT90FD [SPANSION]
暂无描述;型号: | AM29F160DT90FD |
厂家: | SPANSION |
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Am29F160D
Data Sheet
Am29F160D Cover Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number Am29F160D_00
Revision D
Amendment 10
Issue Date April 23, 2010
D a t a S h e e t
This page left intentionally blank.
2
Am29F160D
Am29F160D_00_D10 April 23, 2010
DATA SHEET
Am29F160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 5.0 Volt single power supply operation
■ Compatible with JEDEC standards
— Minimizes system-level power requirements
— Pinout and software compatible with single-
power supply Flash
■ High performance
— Superior inadvertent write protection
— Access times as fast as 70 ns
■ Embedded Algorithms
■ Manufactured on 0.23 µm process technology
■ CFI (Common Flash Interface) compliant
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Ultra low power consumption (typical values at
■ Erase Suspend/Erase Resume
5 MHz)
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
— 15 mA typical active read current
— 35 mA typical erase/program current
— 300 nA typical standby mode current
■ Data# Polling and toggle bits
■ Flexible sector architecture
— Provides a software method of detecting
program or erase operation completion
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
■ Unlock Bypass Program command
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Reduces overall programming time when
issuing multiple program command sequences
— Supports full chip erase
■ Ready/Busy# pin (RY/BY#)
— Sector Protection features:
— Provides a hardware method of detecting
program or erase cycle completion
— Hardware method of locking a sector to prevent
program or erase operations within that sector
■ Hardware reset pin (RESET#)
— Sectors can be locked in-system or via
programming equipment
— Hardware method to reset the device for reading
array data
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ WP# input pin
■ Top boot or bottom boot configurations
— At , protects the 16 Kbyte boot sector from
VIL
available
erasure regardless of sector protect/unprotect
status
■ Minimum 1,000,000 write cycle guarantee
per sector
— At V , allows removal of boot sector protection
IH
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
■ Package options
■ Program and Erase Performance
— Sector erase time: 1 s typical for each 64 Kbyte
sector
— 48-pin TSOP
— Byte program time: 7 µs typical
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# Am29F160D_00 Revision: D
Amendment: 10 Issue Date: April 23, 2010
D A T A S H E E T
GENERAL DESCRIPTION
The Am29F160D is a 16 Mbit, 5.0 Volt-only Flash
memory device organized as 2,097,152 bytes or
1,048,576 words. Data appears on DQ0-DQ7 or DQ0-
DQ15 depending on the data width selected. The
device is designed to be programmed in-system with
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, by reading the DQ7 (Data# Polling), or DQ6
(toggle) status bits. After a program or erase cycle is
completed, the device is ready to read array data or
accept another command.
the standard system 5.0 volt V
supply. A 12.0 volt
CC
V
is not required for program or erase operations.
PP
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
The device can also be programmed in standard
EPROM programmers.
The device offers access times of 70 and 90 ns, allowing
high speed microprocessors to operate without wait
states. The device is offered in a 48-pin TSOP
package. To eliminate bus contention each device has
separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protec-
tion feature disables both program and erase operations
in any combination of sectors of memory. This can be
achieved in-system or via programming equipment.
Each device requires only a single 5.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The Write Protect (WP#) feature protects the 16
Kbyte boot sector from erasure, by asserting a logic
low on the WP# pin, whether or not the sector had
been previously protected.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timing. Register contents
serve as inputs to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read boot-up firmware from the Flash memory device.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
The device offers a standby mode as a power-saving
feature. Once the system places the device into the
standby mode power consumption is greatly reduced.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunnelling.
The data is programmed using hot electron injection.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already pro-
grammed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
2
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information. . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8
Table 1. Am29F160D Device Bus Operations . . . . . 8
Word/Byte Configuration . . . . . . . . . . . . . . . . . . . . . 8
Requirements for Reading Array Data. . . . . . . . . . . 8
Writing Commands/Command Sequences . . . . . . . 9
Program and Erase Operation Status . . . . . . . . . . . 9
Standby Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Automatic Sleep Mode. . . . . . . . . . . . . . . . . . . . . . . 9
RESET#: Hardware Reset Pin. . . . . . . . . . . . . . . . . 9
Output Disable Mode . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 2. Am29F160DT Sector Address Table (Top
Boot) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 3. Am29F160DB Sector Address Table (Bottom
Boot) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Autoselect Mode . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 4. Am29F160D Autoselect Codes (High Voltage
Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Sector Protection/Unprotection . . . . . . . . . . . . . . . 12
Write Protect (WP#) . . . . . . . . . . . . . . . . . . . . . . . . 13
Temporary Sector Unprotect . . . . . . . . . . . . . . . . . 13
Figure 1. Temporary Sector Unprotect Operation . 13
In-System Sector Protect/Unprotect Algorithms. . . 14
Common Flash Memory Interface (CFI). . . . . . . 15
Table 5. CFI Query Identification String. . . . . . . . . 15
Table 6. System Interface String . . . . . . . . . . . . . . 16
Table 7. Device Geometry Definition . . . . . . . . . . . 16
Table 8. Primary Vendor-Specific Extended Query 17
Hardware Data Protection . . . . . . . . . . . . . . . . . . . 18
Reading Array Data . . . . . . . . . . . . . . . . . . . . . . . . 18
Reset Command . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Autoselect Command Sequence . . . . . . . . . . . . . . 19
Word/Byte Program Command Sequence. . . . . . . 19
Figure 3. Program Operation . . . . . . . . . . . . . . . . . 20
Chip Erase Command Sequence . . . . . . . . . . . . . 20
Sector Erase Command Sequence . . . . . . . . . . . . 20
Erase Suspend/Erase Resume Commands . . . . . 21
Figure 4. Erase Operation . . . . . . . . . . . . . . . . . . . 21
Command Definitions. . . . . . . . . . . . . . . . . . . . . . . 22
Table 9. Am29F160D Command Definitions . . . . . 22
Write Operation Status . . . . . . . . . . . . . . . . . . . . 23
DQ7: Data# Polling . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5. Data# Polling Algorithm . . . . . . . . . . . . . . 23
RY/BY#: Ready/Busy# . . . . . . . . . . . . . . . . . . . . . . 24
DQ6: Toggle Bit I . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DQ2: Toggle Bit II . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Reading Toggle Bits DQ6/DQ2. . . . . . . . . . . . . . . . 24
DQ5: Exceeded Timing Limits . . . . . . . . . . . . . . . . 25
DQ3: Sector Erase Timer . . . . . . . . . . . . . . . . . . . . 25
Figure 6. Toggle Bit Algorithm . . . . . . . . . . . . . . . . 25
Table 10. Write Operation Status . . . . . . . . . . . . . . 26
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 27
Figure 7. Maximum Negative Overshoot Waveform 27
Figure 8. Maximum Positive Overshoot Waveform. 27
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 27
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 28
TTL/NMOS Compatible. . . . . . . . . . . . . . . . . . . . . . 28
CMOS Compatible . . . . . . . . . . . . . . . . . . . . . . . . . 29
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 9. Test Setup . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 11. Test Specifications . . . . . . . . . . . . . . . . . 30
Key to Switching Waveforms. . . . . . . . . . . . . . . . 30
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 10. Read Operations Timings . . . . . . . . . . . 31
Figure 11. RESET# Timings . . . . . . . . . . . . . . . . . . 32
Figure 12. BYTE# Timings for Read Operations . . 33
Figure 13. BYTE# Timings for Write Operations. . . 33
Figure 14. Program Operation Timings. . . . . . . . . . 35
Figure 15. Chip/Sector Erase Operation Timings . . 36
Figure 16. Data# Polling Timings (During Embedded
Algorithms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 17. Toggle Bit Timings (During Embedded Algo-
rithms). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 18. DQ2 vs. DQ6 . . . . . . . . . . . . . . . . . . . . . 38
Figure 19. Temporary Sector Unprotect Timing Dia-
gram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 20. Sector Protect/Unprotect
Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 21. Alternate CE# Controlled Write Operation
Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Erase and Programming Performance . . . . . . . . 42
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 42
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 42
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 43
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 44
April 23, 2010 Am29F160D_00_D10
Am29F160D
3
D A T A S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F160D
VCC = 5.0 V 5ꢀ
VCC = 5.0 V 10ꢀ
75
Speed Option
70
70
70
30
90
90
90
35
Max access time, ns (tACC
)
70
70
30
Max CE# access time, ns (tCE
)
Max OE# access time, ns (tOE
)
Note:
See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
Input/Output
Buffers
RESET#
State
Control
WE#
WP#
Command
Register
BYTE#
PGM Voltage
Generator
Data
Latch
Chip Enable
Output Enable
Logic
STB
CE#
OE#
Y-Decoder
X-Decoder
Y-Gating
STB
VCC Detector
Timer
Cell Matrix
A0–A19
4
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
1
2
3
4
5
6
7
8
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A8
A19
NC
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-Pin TSOP
Standard Pinout
WE#
RESET#
NC
WP#
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
April 23, 2010 Am29F160D_00_D10
Am29F160D
5
D A T A S H E E T
PIN CONFIGURATION
LOGIC SYMBOL
A0–A19
= 20 address inputs
20
DQ0–DQ14 = 15 data inputs/outputs
A0–A19
16 or 8
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
DQ0–DQ15
(A-1)
BYTE#
CE#
=
=
=
=
=
=
=
=
Select input for 8-bit or 16-bit mode
Chip Enable input
CE#
OE#
OE#
Output Enable input
Write Enable input
WE#
WE#
WP#
WP#
Write Protect input
RESET#
RY/BY#
RESET#
RY/BY#
Hardware reset input
Ready/Busy# output
BYTE#
V
+5.0 V single power supply
(see Product Selector Guide for
device speed ratings and voltage
supply tolerances)
CC
V
=
=
Device ground
SS
NC
Pin not connected internally
6
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the elements below.
Am29F160D
T
75
E
F
TEMPERATURE RANGE
I
=
=
=
=
Industrial (–40° C to +85° C)
F
E
K
Industrial (–40° C to +85° C) with Pb-free Package
Extended (–40°C to +110°C)
Extended (–40°C to +110°C) with Pb-free Package
PACKAGE TYPE
E
=
48-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 048)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
B
=
=
Top sector
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29F160D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS Boot Sector Flash Memory
5.0 Volt-only Read, Program and Erase
Valid Combinations
Valid Combinations
Order Number
Speed
(ns)
Voltage
Range
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
EI,
EF
AM29F160DT75,
AM29F160DB75
5.0 V
5ꢀ
70
EI
AM29F160DT70,
AM29F160DB70
70
90
70
90
EF
5.0 V
10ꢀ
AM29F160DT90,
AM29F160DB90
EI,
EF
Am29F160DT75,
Am29F160DB75
EE,
EK
5.0 V
5ꢀ
Am29F160DT90,
Am29F160DB90
EE,
EK
5.0 V
10ꢀ
April 23, 2010 Am29F160D_00_D10
Am29F160D
7
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register it-
self does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function of
the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe
each of these operations in further detail.
Table 1. Am29F160D Device Bus Operations
DQ8–DQ15
BYTE#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
Operation
CE#
L
OE# WE#
WP#
X
RESET#
= VIL
Read
Write
L
H
L
H
H
AIN
AIN
DOUT
DIN
DOUT
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
L
H
(Note 3)
VCC
0.5 V
VCC
0.5 V
Standby
X
X
(Note 4)
X
High-Z
High-Z
High-Z
Output Disable
Reset
L
H
X
H
X
X
X
H
L
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
X
Sector Address,
A6 = L, A1 = H,
A0 = L
Sector Protect
(Note 2)
L
H
L
X
VID
DIN
X
X
Sector Address,
A6 = H, A1 = H,
A0 = L
Sector Unprotect
(Note 2)
L
H
X
L
X
VID
VID
DIN
DIN
X
X
Temporary Sector
Unprotect
X
X
(Note 3)
AIN
DIN
High-Z
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
3. The 16 Kbyte boot sector is protected from erasure when WP# = VIL.
4. In CMOS mode, WP# must be at VCC 0.5 V or left floating.
and gates array data to the output pins. WE# should re-
Word/Byte Configuration
main at V .
IH
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and control-
led by CE# and OE#.
The internal state machine is set for reading array
data upon device power-up, or after a hardware reset.
This ensures that no spurious alteration of the mem-
ory content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that as-
sert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are ac-
tive and controlled by CE# and OE#. The data I/O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
See Reading Array Data‚ on page 18 for more informa-
tion. Refer to the AC Read Operations table for timing
specifications and to the Read Operations Timings di-
drive the CE# and OE# pins to V . CE# is the power
IL
agram for the timing waveforms. I
in the DC Char-
CC1
control and selects the device. OE# is the output control
8
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
acteristics table represents the active current specifica-
The device also enters the standby mode when the RE-
SET# pin is driven low. Refer to the next section,
RESET#: Hardware Reset Pin‚ on page 9.
tion for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
In the DC Characteristics tables, I
standby current specification.
represents the
CC3
CE# to V , and OE# to V .
IL
IH
An erase operation can erase one sector, multiple sec-
tors, or the entire device. The Sector Address Tables in-
dicate the address space that each sector occupies. A
“sector address” consists of the address bits required
to uniquely select a sector. See the Command Defini-
tions‚ on page 18 section for details on erasing a sector
or the entire chip, or suspending/resuming the erase
operation.
Automatic Sleep Mode
The automatic sleep mode minimizes flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for t
+ 30
ACC
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter-
nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Autoselect Mode‚ on page 12 and
Autoselect Command Sequence‚ on page 19 sections
for more information.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the system
drives the RESET# pin low for at least a period of t
,
RP
the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity. Current is reduced for the duration of the RE-
SET# pulse.
I
in the DC Characteristics table represents the ac-
CC2
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firm-
ware from the Flash memory.
CC
read specifications apply. Refer to Write Operation
Status‚ on page 23 for more information, and to each
AC Characteristics section for timing diagrams.
If RESET# is asserted during a program or erase oper-
ation, the RY/BY# pin remains a “0” (busy) until the in-
ternal reset operation is complete, which requires a
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
time of t
(during Embedded Algorithms). The
READY
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
The device enters the CMOS standby mode when the
CE# and RESET# are held at V
this is a more restricted voltage range than V .) WP#
within a time of t
(not during Embedded Algo-
READY
0.5 V. (Note that
CC
rithms). The system can read data t
after the RE-
RH
IH
SET# pin returns to V .
IH
must also either be held at V
0.5 V or left floating.
The device enters the TTL standby mode when CE#
and RESET# pins are both held at V . The device re-
CC
Refer to the AC Characteristics tables for RESET# pa-
rameters and timing diagram.
IH
quires standard access time (t ) for read access when
CE
the device is in either of these standby modes, before it
is ready to read data.
Output Disable Mode
When the OE# input is at V , output from the device is
IH
disabled. The output pins are placed in the high imped-
ance state.
April 23, 2010 Am29F160D_00_D10
Am29F160D
9
D A T A S H E E T
Table 2. Am29F160DT Sector Address Table (Top Boot)
Sector Size
(Kbytes/
Address Range (in hexadecimal)
Sector
SA0
A19 A18 A17 A16 A15 A14 A13 A12
Kwords)
Byte Mode (x8)
000000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1F7FFF
1F8000–1F9FFF
1FA000–1FBFFF
1FC000–1FFFFF
Word Mode (x16)
00000–07FFF
08000–0FFFF
10000–17FFF
18000–1FFFF
20000–27FFF
28000–2FFFF
30000–37FFF
38000–3FFFF
40000–47FFF
48000–4FFFF
50000–57FFF
58000–5FFFF
60000–67FFF
68000–6FFFF
70000–77FFF
78000–7FFFF
80000–87FFF
88000–8FFFF
90000–97FFF
98000–9FFFF
A0000–A7FFF
A8000–AFFFF
B0000–B7FFF
B8000–BFFFF
C0000–C7FFF
C8000–CFFFF
D0000–D7FFF
D8000–DFFFF
E0000–E7FFF
E8000–EFFFF
F0000–F7FFF
F8000–FBFFF
FC000–FCFFF
FD000–FDFFF
FE000–FFFFF
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
SA1
SA2
SA3
SA4
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
1
1
0
1
8/4
1
1
X
16/8
Note: Address range is A19:A-1 in byte mode and A19:A0 in
word mode. See “Word/Byte Configuration” section.
10
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
Table 3. Am29F160DB Sector Address Table (Bottom Boot)
Sector Size
(Kbytes/
Address Range (in hexadecimal)
Sector
SA0
A19 A18 A17 A16 A15 A14 A13 A12
Kwords)
Byte Mode (x8)
000000–003FFF
004000–005FFF
006000–007FFF
008000–00FFFF
010000–01FFFF
020000–02FFFF
030000–03FFFF
040000–04FFFF
050000–05FFFF
060000–06FFFF
070000–07FFFF
080000–08FFFF
090000–09FFFF
0A0000–0AFFFF
0B0000–0BFFFF
0C0000–0CFFFF
0D0000–0DFFFF
0E0000–0EFFFF
0F0000–0FFFFF
100000–10FFFF
110000–11FFFF
120000–12FFFF
130000–13FFFF
140000–14FFFF
150000–15FFFF
160000–16FFFF
170000–17FFFF
180000–18FFFF
190000–19FFFF
1A0000–1AFFFF
1B0000–1BFFFF
1C0000–1CFFFF
1D0000–1DFFFF
1E0000–1EFFFF
1F0000–1FFFFF
Word Mode (x16)
00000–01FFF
02000–02FFF
03000–03FFF
04000–07FFF
08000–0FFFF
10000–17FFF
18000–1FFFF
20000–27FFF
28000–2FFFF
30000–37FFF
38000–3FFFF
40000–47FFF
48000–4FFFF
50000–57FFF
58000–5FFFF
60000–67FFF
68000–6FFFF
70000–77FFF
78000–7FFFF
80000–87FFF
88000–8FFFF
90000–97FFF
98000–9FFFF
A0000–A7FFF
A8000–AFFFF
B0000–B7FFF
B8000–BFFFF
C0000–C7FFF
C8000–CFFFF
D0000–D7FFF
D8000–DFFFF
E0000–E7FFF
E8000–EFFFF
F0000–F7FFF
F8000–FFFFF
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
1
X
0
16/8
8/4
SA1
SA2
0
1
1
8/4
SA3
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
SA4
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
SA5
SA6
SA7
SA8
SA9
SA10
SA11
SA12
SA13
SA14
SA15
SA16
SA17
SA18
SA19
SA20
SA21
SA22
SA23
SA24
SA25
SA26
SA27
SA28
SA29
SA30
SA31
SA32
SA33
SA34
Note: Address range is A19:A-1 in byte mode and A19:A0 in
word mode. See the Word/Byte Configuration‚ on page 8.
.
April 23, 2010 Am29F160D_00_D10
Am29F160D
11
D A T A S H E E T
Autoselect Mode
The autoselect mode provides manufacturer and de-
vice identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
dress must appear on the appropriate highest order
address bits. Refer to the corresponding Sector Ad-
dress Tables. The Command Definitions table shows
the remaining address bits that are don’t care. When all
necessary bits are set as required, the programming
equipment may then read the corresponding identifier
code on DQ7–DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in the Command Defini-
When using programming equipment, the autoselect
mode requires V (11.5 V to 12.5 V) on address pin
ID
A9. Address pins A6, A1, and A0 must be as shown in
Autoselect Codes (High Voltage Method) table. In addi-
tion, when verifying sector protection, the sector ad-
tions table. This method does not require V . See
Command Definitions‚ on page 18 for details on using
the autoselect mode.
ID
Table 4. Am29F160D Autoselect Codes (High Voltage Method)
A19 A11
to to
WE# A12 A10
A8
to
A7
A5
to
A2
DQ8
to
DQ15
DQ7
to
DQ0
Description
Mode
CE#
L
OE#
A9
A6
A1
A0
Manufacturer ID: AMD
L
L
H
H
X
X
VID
X
X
L
X
X
L
L
X
01h
D2h
Device ID:
Am29F160D
(Top Boot Block)
Word
Byte
Word
Byte
L
22h
X
X
VID
L
L
L
L
H
H
L
L
L
L
L
L
H
H
H
X
22h
X
D2h
D8h
Device ID:
Am29F160D
(Bottom Boot Block)
X
X
X
VID
X
X
X
X
D8h
X
01h (protected)
Sector Protection Verification
L
L
H
SA
VID
L
H
L
00h
(unprotected)
X
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
The primary method requires V on the RESET# pin
Sector Protection/Unprotection
ID
only, and can be implemented either in-system or via
programming equipment. Figure 2, on page 14 shows
the algorithms and Figure 20, on page 39 shows the
timing diagram. This method uses standard micropro-
cessor bus cycle timing. For sector unprotect, all unpro-
tected sectors must first be protected prior to the first
sector unprotect write cycle.
The hardware sector protection feature disables both
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both pro-
gram and erase operations in previously protected
sectors.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
The alternate method intended only for programming
equipment requires V on address pin A9 and OE#.
ID
This method is compatible with programmer routines
written for earlier 5.0 volt-only AMD flash devices. De-
tails on this method are provided in a supplement, pub-
lication number 22289. Contact an AMD representative
to request a copy.
It is possible to determine whether a sector is protected
or unprotected. See Autoselect Mode‚ on page 12 for
details.
Sector protection/unprotection can be implemented via
two methods.
12
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
Write Protect (WP#)
The Write Protect function provides a hardware
method of protecting the 16 Kbyte boot sector from
START
erasure without using V .
ID
RESET# = VID
(Note 1)
If the system asserts V on the WP# pin, the device
IL
disables erase functions for the 16 Kbyte boot sector
(SA34 for top boot device and SA0 for bottom boot de-
vice) independently of whether those sectors were
protected or unprotected using the method described
in Sector Protection/Unprotection‚ on page 12.
Perform Erase or
Program Operations
If the system asserts V on the WP# pin, the device
IH
RESET# = VIH
reverts to whether the 16 Kbyte boot sector was previ-
ously set to be protected or unprotected using the
method described in Sector Protection/Unprotection‚
on page 12.
Temporary Sector
Unprotect Completed
(Note 2)
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
Notes:
1. All protected sectors unprotected. However, boot sector
remains protected from erasure only if WP# is low.
SET# pin to V . During this mode, formerly protected
ID
2. All previously protected sectors are protected once
again.
sectors can be programmed or erased by selecting the
sector addresses. However, note that the boot sector is
still protected from erasure only if WP# is asserted low.
Once V is removed from the RESET# pin, all the pre-
ID
Figure 1. Temporary Sector Unprotect Operation
viously protected sectors are protected again. Figure 2,
on page 14 shows the algorithm, and Figure 19, on
page 38 shows the timing diagrams, for this feature.
April 23, 2010 Am29F160D_00_D10
Am29F160D
13
D A T A S H E E T
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
PLSCNT = 1
PLSCNT = 1
RESET# = VID
RESET# = VID
unprotected sectors
prior to issuing the
first sector
Wait 1 μs
Wait 1 μs
unprotect address
No
First Write
Cycle = 60h?
No
First Write
Cycle = 60h?
Temporary Sector
Unprotect Mode
Temporary Sector
Unprotect Mode
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Wait 150 µs
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
Reset
PLSCNT = 1
Increment
PLSCNT
Wait 15 ms
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Read from
sector address
with A6 = 1,
Data = 01h?
Yes
A1 = 1, A0 = 0
No
Yes
Set up
next sector
address
Yes
No
PLSCNT
= 1000?
Protect another
sector?
Data = 00h?
Yes
Device failed
No
Yes
Remove VID
from RESET#
No
Last sector
verified?
Device failed
Write reset
command
Yes
Remove VID
Sector Unprotect
Algorithm
from RESET#
Sector Protect
Algorithm
Sector Protect
complete
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/Unprotect Algorithms
14
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
Table 7 on page 16, and –Table 8 on page 17. In word
COMMON FLASH MEMORY INTERFACE
(CFI)
mode, the upper address bits (A7–MSB) must be all
zeros. To terminate reading CFI data, the system must
write the reset command.
The Common Flash Interface (CFI) specification out-
lines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-indepen-
dent, JEDEC ID-independent, and forward- and back-
ward-compatible for the specified flash device families.
Flash vendors can standardize their existing interfaces
for long-term compatibility.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Table 5 on page 15,
Table 6 on page 16, Table 7 on page 16, and –Table 8
on page 17. The system must write the reset command
to return the device to the autoselect mode.
For further information, please refer to the CFI Specifi-
cation and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/products/nvd/over-
view/cfi.html. Alternatively, contact an AMD represen-
tative for copies of these documents.
This device enters the CFI Query mode when the
system writes the CFI Query command, 98h, to
address 55h in word mode (or address AAh in byte
mode), any time the device is ready to read array data.
The system can read CFI information at the addresses
given in Table 5 on page 15, Table 6 on page 16,
Table 5. CFI Query Identification String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
Primary OEM Command Set
13h
14h
26h
28h
0002h
0000h
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
April 23, 2010 Am29F160D_00_D10
Am29F160D
15
D A T A S H E E T
Table 6. System Interface String
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
VCC Min. (write/erase)
0045h
1Bh
1Ch
36h
38h
D7–D4: volt, D3–D0: 100 millivolt
VCC Max. (write/erase)
0055h
D7–D4: volt, D3–D0: 100 millivolt
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
3Ah
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
0000h
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
VPP Min. voltage (00h = no VPP pin present)
VPP Max. voltage (00h = no VPP pin present)
Typical timeout per single byte/word write 2N µs
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
Typical timeout per individual block erase 2N ms
Typical timeout for full chip erase 2N ms (00h = not supported)
Max. timeout for byte/word write 2N times typical
Max. timeout for buffer write 2N times typical
Max. timeout per individual block erase 2N times typical
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 7. Device Geometry Definition
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
27h
4Eh
0015h
Device Size = 2N byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0080h
0000h
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
001Eh
0000h
0000h
0001h
16
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
Table 8. Primary Vendor-Specific Extended Query
Addresses
Addresses
(Word Mode)
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
44h
86h
88h
0031h
0031h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0 = Required, 1 = Not Required
45h
46h
47h
48h
8Ah
8Ch
8Eh
90h
0000h
0002h
0001h
0001h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
Sector Protect
0 = Not Supported, X = Number of sectors per group
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
Sector Protect/Unprotect scheme
49h
92h
0004h
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Ah
4Bh
4Ch
94h
96h
98h
0000h
0000h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
4Eh
9Ah
9Ch
0000h
0000h
ACC Supply Minimum
ACC Supply Maximum
Top/Bottom Boot Sector Flag
02 = bottom, 03 = top
0002h,
0003h
4Fh
9Eh
April 23, 2010 Am29F160D_00_D10
Am29F160D
17
D A T A S H E E T
proper signals to the control pins to prevent uninten-
Hardware Data Protection
tional writes when V is greater than V
.
CC
LKO
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Defi-
nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
gramming, which might otherwise be caused by spuri-
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
ous system level signals during V
power-down transitions, or from system noise.
power-up and
Write cycles are inhibited by holding any one of OE# =
CC
V , CE# = V or WE# = V . To initiate a write cycle,
IL
IH
IH
CE# and WE# must be a logical zero while OE# is a
logical one.
Low V Write Inhibit
CC
When V
is less than V
, the device does not ac-
LKO
CC
Power-Up Write Inhibit
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
If WE# = CE# = V and OE# = V during power up, the
IL
IH
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
device resets. Subsequent writes are ignored until V
CC
is greater than V
. The system must provide the
LKO
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. The Command Definitions table defines the
valid register command sequences. Writing incorrect
address and data values or writing them in the im-
proper sequence resets the device to reading array
data.
or while in the autoselect mode. See the Reset Com-
mand‚ on page 18 section, next.
See also Requirements for Reading Array Data‚ on
page 8 for more information. The Read Operations
table provides the read parameters, and Read Opera-
tion Timings diagram shows the timing diagram.
Reset Command
Writing the reset command to the device resets the de-
vice to reading array data. Address bits are don’t care
for this command.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ig-
nores reset commands until the operation is complete.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
The reset command may be written between the se-
quence cycles in a program command sequence be-
fore programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The sys-
tem can read array data using the standard read tim-
ings, except that if it reads at an address within erase-
suspended sectors, the device outputs status data.
After completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See Erase Sus-
pend/Erase Resume Commands‚ on page 21 for more
information on this mode.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes high,
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to read-
ing array data (also applies during Erase Suspend).
18
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
erated program pulses and verify the programmed cell
Autoselect Command Sequence
margin. The Command Definitions take shows the ad-
dress and data requirements for the byte program com-
mand sequence.
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM program-
When the Embedded Program algorithm is complete,
the device then returns to reading array data and ad-
dresses are no longer latched. The system can deter-
mine the status of the program operation by using DQ7,
DQ6, or RY/BY#. See “Write Operation Status” for in-
formation on these status bits.
mers and requires V on address bit A9.
ID
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
Any commands written to the device during the Em-
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program-
ming operation. The program command sequence
should be reinitiated once the device resets to reading
array data, to ensure data integrity.
A read cycle at address XX00h retrieves the manufac-
turer code. A read cycle at address XX01h in word
mode (or 02h in byte mode) returns the device code.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. However, a succeeding read shows that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
A read cycle containing a sector address (SA) and the
address 02h in word mode (or 04h in byte mode) re-
turns 01h if that sector is protected, or 00h if it is un-
protected. Refer to the Sector Address tables for valid
sector addresses. When a read occurs at an address
within the 16 Kbyte boot sector (SA34 for top boot de-
vices and SA0 for bottom boot devices), the input on
WP# may determine what code is returned.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to pro-
gram words to the device faster than using the stan-
dard program command sequence. The unlock bypass
command sequence is initiated by first writing two un-
lock cycles. This is followed by a third write cycle con-
taining the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle un-
lock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program com-
mand, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total program-
ming time. Table 9 on page 22 shows the require-
ments for the command sequence.
16Kb Sector
Protection
WP#
input
Autoselect
Code
protected
protected
VIH
VIL
VIH
VIL
01 (protected)
01 (protected)
00 (unprotected)
01 (protected)1
unprotected
unprotected
1
Sector is protected from erasure. Programing opera-
tions within sector is still permitted.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Word/Byte Program Command Sequence
The system may program the device by byte or word,
on depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program com-
mand sequence is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or tim-
ings. The device automatically provides internally gen-
During the unlock bypass mode, only the Unlock By-
pass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset com-
mand sequence. The first cycle must contain the data
90h. The second cycle must contain the data 00h. The
device then returns to the read mode.
April 23, 2010 Am29F160D_00_D10
Am29F160D
19
D A T A S H E E T
The system can determine the status of the erase
operation by using DQ7, DQ6, DQ2, or RY/BY#. See
Write Operation Status‚ on page 23 for information
on these status bits. When the Embedded Erase al-
gorithm is complete, the device returns to reading
array data and addresses are no longer latched.
START
Write Program
Command Sequence
Figure 4, on page 21 illustrates the algorithm for the
erase operation. See the Erase/Program Operations
tables in “AC Characteristics” for parameters, and to
the Chip/Sector Erase Operation Timings for timing
waveforms.
Data Poll
from System
Embedded
Program
Sector Erase Command Sequence
algorithm
in progress
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two un-
lock cycles, followed by a set-up command. Two addi-
tional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. The Command Definitions table
shows the address and data requirements for the sec-
tor erase command sequence.
Verify Data?
Yes
No
No
Increment Address
Last Address?
Yes
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algo-
rithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or tim-
ings during these operations.
Programming
Completed
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sec-
tors may be from one sector to all sectors. The time be-
tween these additional cycles must be less than 50 µs,
otherwise the last address and command might not be
accepted, and erasure may begin. It is recommended
that processor interrupts be disabled during this time to
ensure all commands are accepted. The interrupts can
be re-enabled after the last Sector Erase command is
written. If the time between additional sector erase
commands can be assumed to be less than 50 µs, the
system need not monitor DQ3. Any command other
than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data. The system must rewrite the command sequence
and any additional sector addresses and commands.
Note: See the appropriate Command Definitions table for
program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algo-
rithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. The Command
Definitions table shows the address and data require-
ments for the chip erase command sequence.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the DQ3: Sector Erase
Timer‚ on page 25 section.) The time-out begins from
the rising edge of the final WE# pulse in the command
sequence.
Any commands written to the chip during the Embed-
ded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately ter-
minates the operation. The Chip Erase command se-
quence should be reinitiated once the device returns to
reading array data, to ensure data integrity.
Once the sector erase operation begins, only the Erase
Suspend command is valid. All other commands are ig-
nored. Note that a hardware reset during the sector
erase operation immediately terminates the operation.
20
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
The Sector Erase command sequence should be rein-
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See Write Operation Status‚ on page 23 for
more information.
itiated once the device returns to reading array data, to
ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. Refer to Write Operation Status‚ on page 23
for information on these status bits.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See Autoselect Command Sequence‚
on page 19 for more information.
Figure 4, on page 21 illustrates the algorithm for the
erase operation. Refer to the Erase/Program Opera-
tions tables in the AC Characteristics‚ on page 31 for
parameters, and to the Sector Erase Operations Tim-
ing diagram for timing waveforms.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice resumes erasing.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to in-
terrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Ad-
dresses are “don’t-cares” when writing the Erase Sus-
pend command.
START
Write Erase
Command Sequence
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
Data Poll
from System
Embedded
Erase
algorithm
in progress
No
Data = FFh?
After the erase operation is suspended, the system can
read array data from or program data to any sector not
selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Normal read and write
timings and command definitions apply. Reading at any
address within erase-suspended sectors produces sta-
tus data on DQ7–DQ0. The system can use DQ7, or
DQ6 and DQ2 together, to determine if a sector is ac-
tively erasing or is erase-suspended. See Write Oper-
ation Status‚ on page 23 for information on these status
bits.
Yes
Erasure Completed
1. See the appropriate Command Definitions table for erase
command sequence.
2. See DQ3: Sector Erase Timer‚ on page 25 for more infor-
mation.
After an erase-suspended program operation is com-
plete, the system can once again read array data within
non-suspended sectors. The system can determine
Figure 4. Erase Operation
April 23, 2010 Am29F160D_00_D10
Am29F160D
21
D A T A S H E E T
Command Definitions
Table 9. Am29F160D Command Definitions
Bus Cycles (Notes 2–5)
Command
Sequence
(Note 1)
First
Second
Third
Addr
Fourth
Fifth
Sixth
Addr Data Addr Data
Data Addr Data Addr Data Addr Data
Read (Note 6)
Reset (Note 7)
1
1
RA
XXX
555
RD
F0
Word
2AA
555
2AA
555
2AA
555
555
AAA
555
Manufacturer ID
4
4
4
AA
AA
AA
55
55
55
90
90
90
X00
01
Byte
Word
Byte
Word
Byte
AAA
555
X01
X02
X01
X02
22D2
D2
Device ID,
Top Boot Block
AAA
555
AAA
555
22D8
D8
Device ID,
Bottom Boot Block
AAA
AAA
XX00
XX01
00
(SA)
X02
Word
Byte
555
2AA
555
555
Sector Protect Verify
(Note 9)
4
AA
55
90
(SA)
X04
AAA
AAA
01
Word
Byte
Word
Byte
Word
Byte
555
AAA
555
CFI Query (Note 10)
1
4
3
98
AA
AA
2AA
555
2AA
555
PA
555
AAA
555
Program
55
55
A0
20
PA
PD
AAA
555
Unlock Bypass
AAA
XXX
XXX
555
AAA
Unlock Bypass Program (Note 11)
Unlock Bypass Reset (Note 12)
2
2
A0
90
PD
00
XXX
2AA
555
2AA
555
Word
555
AAA
555
555
AAA
555
2AA
555
2AA
555
555
Chip Erase
6
6
AA
AA
55
55
80
80
AA
AA
55
55
10
30
Byte
Word
Byte
AAA
555
AAA
Sector Erase
SA
AAA
XXX
XXX
AAA
AAA
Erase Suspend (Note 13)
Erase Resume (Note 14)
1
1
B0
30
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A19–A12 uniquely select any sector.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever
happens later.
Notes:
1. See Table 1 on page 8 for description of bus operations.
2. All values are in hexadecimal.
9. The data is 00h for an unprotected sector and 01h for a protected
sector. See Autoselect Command Sequence‚ on page 19 for
more information.
3. Except when reading array or autoselect data, all bus cycles are
write operations.
10. Command is valid when device is ready to read array data or
when device is in autoselect mode.
4. Data bits DQ15–DQ8 are don’t cares for unlock and command
cycles.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
5. Address bits A19–A11 are don’t cares for unlock and command
cycles, unless SA or PA required.
12. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass mode.
6. No unlock or command cycles required when reading array data.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
7. The Reset command is required to return to reading array data
when device is in the autoselect mode, CFI query mode, or if
DQ5 goes high (while the device is providing status data).
8. The fourth cycle of the autoselect command sequence is a read
cycle.
14. The Erase Resume command is valid only during the
Erase Suspend mode.
22
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the sta-
tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 10 on page 26 and the following
subsections describe the functions of these bits. DQ7,
RY/BY#, and DQ6 each offer a method for determining
whether a program or erase operation is complete or in
progress. These three bits are discussed first.
Table 10 on page 26 shows the outputs for Data# Poll-
ing on DQ7. Figure 5 shows the Data# Polling algo-
rithm.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Algorithm is in
progress or completed, or whether the device is in
Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the program or erase
command sequence.
Read DQ7–DQ0
Addr = VA
Yes
DQ7 = Data?
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to pro-
gramming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for ap-
proximately 2 µs, then the device returns to reading
array data.
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase al-
gorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status in-
formation on DQ7.
Yes
DQ7 = Data?
No
PASS
FAIL
After an erase command sequence is written, if all sec-
tors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the de-
vice returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the se-
lected sectors that are protected.
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
When the system detects DQ7 changes from the com-
plement to true data, it can read valid data at DQ7–
DQ0 on the following read cycles. This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted low. The Data# Poll-
ing Timings (During Embedded Algorithms) figure in
the “AC Characteristics” section illustrates this.
Figure 5. Data# Polling Algorithm
April 23, 2010 Am29F160D_00_D10
Am29F160D
23
D A T A S H E E T
DQ6 also toggles during the erase-suspend-program
RY/BY#: Ready/Busy#
mode, and stops toggling once the Embedded Pro-
gram algorithm is complete.
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, sev-
eral RY/BY# pins can be tied together in parallel with a
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 6, on page 25 for
the toggle bit algorithm, and to the Toggle Bit Timings
figure in the “AC Characteristics” section for the timing
diagram. The DQ2 vs. DQ6 figure shows the differ-
ences between DQ2 and DQ6 in graphical form. See
also the subsection on DQ2: Toggle Bit II‚ on page 24.
pull-up resistor to V
.
CC
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
Table 10 on page 26 shows the outputs for RY/BY#.
The timing diagrams for read, reset, program, and
erase shows the relationship of RY/BY# to other sig-
nals.
DQ2 toggles when the system reads at addresses
within those sectors that were selected for erasure.
(The system may use either OE# or CE# to control the
read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6,
by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish
which sectors are selected for erasure. Thus, both sta-
tus bits are required for sector and mode information.
Refer to Table 10 on page 26 to compare outputs for
DQ2 and DQ6.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase op-
eration), and during the sector erase time-out.
During an Embedded Program or Erase algorithm op-
eration, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
Figure 6, on page 25 shows the toggle bit algorithm in
flowchart form, and the section “DQ2: Toggle Bit II” ex-
plains the algorithm. See also the “DQ6: Toggle Bit I”
subsection. Refer to the Toggle Bit Timings figure for
the toggle bit timing diagram. The DQ2 vs. DQ6 figure
shows the differences between DQ2 and DQ6 in graph-
ical form.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 tog-
gles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unpro-
tected sectors, and ignores the selected sectors that
are protected.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6, on page 25 for the following discus-
sion. Whenever the system initially begins reading
toggle bit status, it must read DQ7–DQ0 at least twice
in a row to determine whether a toggle bit is toggling.
Typically, a system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of the
toggle bit with the first. If the toggle bit is not toggling,
the device completed the program or erase operation.
The system can read array data on DQ7–DQ0 on the
following read cycle.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling‚ on
page 23).
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped tog-
gling just as DQ5 went high. If the toggle bit is no longer
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.
24
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
toggling, the device successfully completed the
mands. To ensure the command is accepted, the sys-
tem software should check the status of DQ3 prior to
and following each subsequent sector erase command.
If DQ3 is high on the second status check, the last com-
mand might not have been accepted. Table 10 on
page 26 shows the outputs for DQ3.
program or erase operation. If it is still toggling, the
device did not complete the operation successfully, and
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially de-
termines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, de-
termining the status as described in the previous para-
graph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the
beginning of the algorithm when it returns to determine
the status of the operation (top of Figure 6).
START
Read DQ7–DQ0
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time ex-
ceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
Read DQ7–DQ0
(Note 1)
No
Toggle Bit
= Toggle?
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro-
grammed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation exceeds
the timing limits, DQ5 produces a “1.”
Yes
No
DQ5 = 1?
Yes
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
(Notes
1, 2)
Read DQ7–DQ0
Twice
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation begun. (The sector erase timer does
not apply to the chip erase command.) If additional
sectors are selected for erasure, the entire time-out
also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” The system may ignore DQ3 if the sys-
tem can guarantee that the time between additional
sector erase commands is always less than 50 µs.
See also the Sector Erase Command Sequence‚ on
page 20 section.
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Poll-
ing) or DQ6 (Toggle Bit I) to ensure the device accepted
the command sequence, and then read DQ3. If DQ3 is
“1”, the internally controlled erase cycle started; all fur-
ther commands (other than Erase Suspend) are ig-
nored until the erase operation is complete. If DQ3 is
“0”, the device accepts additional sector erase com-
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 6. Toggle Bit Algorithm
April 23, 2010 Am29F160D_00_D10
Am29F160D
25
D A T A S H E E T
Table 10. Write Operation Status
DQ7
DQ5
DQ2
Operation
(Note 1)
DQ6
(Note 2)
DQ3
N/A
1
(Note 1)
RY/BY#
Embedded Program Algorithm
Embedded Erase Algorithm
DQ7#
0
Toggle
Toggle
0
0
No toggle
Toggle
0
0
Standard
Mode
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Erase
Suspend
Mode
Reading within Non-Erase
Suspended Sector
Data
Data
Data
0
Data
N/A
Data
N/A
1
0
Erase-Suspend-Program
DQ7#
Toggle
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation exceeds the maximum timing limits. See
DQ5: Exceeded Timing Limits‚ on page 25 for more information.
26
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . .–65° C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .–55° C to +125°C
20 ns
20 ns
+0.8 V
Voltage with Respect to Ground
V
(Note 1) . . . . . . . . . . . . . . . .–2.0 V to +7.0 V
CC
–0.5 V
–2.0 V
A9, OE#, and
RESET# (Note 2). . . . . . . . . . . .–2.0 V to +12.5 V
All other pins (Note 1) . . . . . . . . .–0.5 V to +7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
20 ns
Figure 7. Maximum Negative
Overshoot Waveform
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may undershoot VSS
to –2.0 V for periods of up to 20 ns. See Figure 7.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
During voltage transitions, input or I/O pins may overshoot
to VCC +2.0 V for periods up to 20 ns. See Figure 8.
20 ns
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and
RESET# may undershoot VSS to –2.0 V for periods of up
to 20 ns. See Figure 7. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to +13.5 V for periods
up to 20 ns.
VCC
+2.0 V
VCC
+0.5 V
2.0 V
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (T ) . . . . . . . . . –40°C to +85°C
A
Extended (E) Devices
Ambient Temperature (T ) . . . . . . . . . –40°C to +110°C
A
V
V
V
Supply Voltages
CC
CC
CC
for 5ꢀ devices . . . . . . . . . . .+4.75 V to +5.25 V
for 10ꢀ devices . . . . . . . . . . . .+4.5 V to +5.5 V
Note: Operating ranges define those limits between which
the functionality of the device is guaranteed.
April 23, 2010 Am29F160D_00_D10
Am29F160D
27
D A T A S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
1.0
µA
VCC = VCC max
A9 = OE# = RESET# = 12.5 V
;
ILIT
ILO
A9, OE#, RESET Input Load Current
Output Leakage Current
35
1.0
40
µA
µA
VOUT = VSS to VCC
CE# = VIL, OE# = VIH
f = 5 MHz, Byte Mode
,
15
15
mA
VCC Active Read Current
(Notes 1, 2)
ICC1
CE# = VIL, OE# = VIH
,
50
50
mA
mA
f = 5 MHz, Word Mode
VCC Active Write Current
(Notes 2, 3 and 4)
ICC2
CE# = VIL, OE# = VIH
35
ICC3
VIL
VCC Standby Current (Notes 2, 5)
Input Low Voltage
CE#, OE#, and RESET# = VIH
0.4
1
mA
V
–0.5
2.0
0.8
VCC
+ 0.5
VIH
VID
Input High Voltage
V
V
Voltage for Autoselect and Temporary
Sector Unprotect
VCC = 5.0 V
11.5
12.5
0.45
VOL
VOH
VLKO
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
IOH = –2.5 mA, VCC = VCC min
V
V
V
Output High Voltage
2.4
3.2
Low VCC Lock-Out Voltage (Note 4)
4.2
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
5. ICC3 = 20 µA max at extended temperature (>+85°C)
28
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VIN = VSS to VCC
VCC = VCC max
,
ILI
Input Load Current
1.0
µA
VCC = VCC max
A9 = OE# = RESET = 12.5 V
,
ILIT
A9, OE#, RESET Input Load Current
Output Leakage Current
35
µA
µA
VOUT = VSS to VCC
VCC = VCC max
,
ILO
1.0
CE# = VIL, OE# = VIH
f = 5 MHz
Byte Mode
,
,
15
15
40
50
mA
mA
VCC Active Read Current
(Note 2)
ICC1
CE# = VIL, OE# = VIH
f = 5 MHz
Word Mode
VCC Active Write Current
(Notes 1, 2, 3)
ICC2
CE# = VIL, OE# = VIH
35
50
5
mA
µA
CE# and RESET# = VCC 0.5 V, WP#
= VCC 0.5 V or floating, OE# = VIH
ICC3
VCC Standby Current (Note 2)
0.3
VIL
VIH
Input Low Voltage
Input High Voltage
–0.5
0.8
V
V
0.7 x VCC
VCC + 0.3
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VCC = 5.0 V
11.5
12.5
0.45
V
VOL
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
IOH = –2.5 mA, VCC = VCC min
IOH = –100 µA, VCC = VCC min
V
V
V
V
VOH1
VOH2
VLKO
0.85 VCC
VCC–0.4
3.2
Output High Voltage
Low VCC Lock-Out Voltage (Note 3)
4.2
Notes:
1. ICC active while Embedded Erase or Embedded Program is in progress.
2. Maximum ICC specifications are tested with VCC = VCCmax
3. Not 100% tested.
April 23, 2010 Am29F160D_00_D10
Am29F160D
29
D A T A S H E E T
TEST CONDITIONS
Table 11. Test Specifications
5.0 V
Test Condition
Output Load
70, 75
90
Unit
1 TTL gate
2.7 kΩ
Device
Under
Test
Output Load Capacitance, CL
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
Input Pulse Levels
5
20
ns
V
C
L
6.2 kΩ
0.0–3.0
0.45–2.4
Input timing measurement
reference levels
1.5
1.5
0.8, 2.0
0.8, 2.0
V
V
Output timing measurement
reference levels
Note:
Diodes are IN3064 or equivalents.
Figure 9. Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Does Not Apply
Changing, State Unknown
Center Line is High Impedance State (High Z)
30
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
AC CHARACTERISTICS
Read Operations
Parameter
Speed Option
Description
JEDEC
Std.
Test Setup
70, 75
90
Unit
tAVAV
tRC
Read Cycle Time (Note 1)
Min
70
90
ns
CE# = VIL
OE# = VIL
tAVQV
tACC
Address to Output Delay
Max
70
90
ns
tELQV
tGLQV
tEHQZ
tCE
tOE
tDF
Chip Enable to Output Delay
OE# = VIL
Max
Max
Max
70
30
20
90
35
20
ns
ns
ns
Output Enable to Output Delay
Chip Enable to Output High Z (Note 1)
Output Enable to Output High Z
(Note 1)
tGHQZ
tDF
tOEH
tOH
Max
Min
Min
20
20
ns
ns
ns
Read
0
Output Enable
Hold Time
(Note 1)
Toggle and
Data# Polling
10
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
tAXQX
Min
0
ns
Notes:
1. Not 100% tested.
2. See Figure 9, on page 30 and Table 11 on page 30 for test specifications.
tRC
Addresses Stable
tACC
Addresses
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0 V
Figure 10. Read Operations Timings
April 23, 2010 Am29F160D_00_D10
Am29F160D
31
D A T A S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
Description
JEDEC
Std
Test Setup
All Speed Options
Unit
RESET# Pin Low (During Embedded Algorithms)
to Read or Write (See Note)
tREADY
Max
20
µs
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
tREADY
Max
500
ns
tRP
tRH
tRB
RESET# Pulse Width
Min
Min
Min
500
50
0
ns
ns
ns
RESET# High Time Before Read (See Note)
RY/BY# Recovery Time
Note: Not 100% tested.
RY/BY#
CE#, OE#
RESET#
tRH
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 11. RESET# Timings
32
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Speed Options
JEDEC
Description
Std.
tELFL/ ELFH
tFLQZ
70, 75
90
Unit
ns
t
CE# to BYTE# Switching Low or High
BYTE# Switching Low to Output HIGH Z
BYTE# Switching High to Output Active
Max
Max
Min
5
20
70
20
90
ns
tFHQV
ns
CE#
OE#
BYTE#
tELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
BYTE#
DQ0–DQ14
Switching
from word
to byte
mode
Address
Input
DQ15
Output
DQ15/A-1
BYTE#
tFLQZ
tELFH
BYTE#
Switching
from byte to
word mode
Data Output
(DQ0–DQ7)
Data Output
(DQ0–DQ14)
DQ0–DQ14
DQ15/A-1
Address
Input
DQ15
Output
tFHQV
Figure 12. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS
)
tHOLD (tAH
)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 13. BYTE# Timings for Write Operations
April 23, 2010 Am29F160D_00_D10
Am29F160D
33
D A T A S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Options
Description
JEDEC
tAVAV
Std.
tWC
tAS
70, 75
90
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
90
tAVWL
tWLAX
tDVWH
tWHDX
0
ns
tAH
45
30
45
45
ns
tDS
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHWL
tCS
tCH
CE# Setup Time
Min
Min
Min
Min
Typ
Typ
Typ
Min
Min
Max
0
0
ns
ns
ns
ns
CE# Hold Time
tWP
Write Pulse Width
Write Pulse Width High
35
45
tWPH
20
7
Byte
tWHWH1
tWHWH1
Programming Operation (Note 2)
µs
Word
12
1
tWHWH2
tWHWH2
tVCS
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
sec
µs
50
0
tRB
Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
ns
tBUSY
30
35
ns
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance‚ on page 42 for more information.
34
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
Read Status Data (last two cycles)
tAS
tWC
Addresses
555h
PA
PA
PA
tAH
CE#
OE#
tCH
tWHWH1
tWP
WE#
Data
tWPH
tCS
tDS
tDH
PD
DOUT
A0h
Status
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 14. Program Operation Timings
April 23, 2010 Am29F160D_00_D10
Am29F160D
35
D A T A S H E E T
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
Read Status Data
VA
tAS
SA
tWC
VA
Addresses
CE#
2AAh
555h for chip erase
tAH
tCH
OE#
tWP
WE#
tWPH
tWHWH2
tCS
tDS
tDH
In
Data
Complete
55h
30h
Progress
10 for Chip Erase
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status‚ on page 23).
2. Illustration shows device in word mode.
Figure 15. Chip/Sector Erase Operation Timings
36
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
AC CHARACTERISTICS
tRC
VA
Addresses
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
High Z
DQ7
Valid Data
Complement
Complement
Status Data
True
DQ0–DQ6
Valid Data
Status Data
True
tBUSY
RY/BY#
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 16. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
CE#
VA
tACC
tCE
VA
VA
VA
tCH
tOE
OE#
WE#
tOEH
tDF
tOH
High Z
DQ6/DQ2
Valid Status
(first read)
Valid Status
Valid Status
Valid Data
(second read)
(stops toggling)
tBUSY
RY/BY#
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
Figure 17. Toggle Bit Timings (During Embedded Algorithms)
April 23, 2010 Am29F160D_00_D10
Am29F160D
37
D A T A S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase
Complete
WE#
Erase
Erase Suspend
Read
DQ6
DQ2
Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.
Figure 18. DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
Description
JEDEC
Std.
All Speed Options
Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
Min
500
ns
RESET# Setup Time for Temporary Sector
Unprotect
tRSP
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 5 V
0 or 5 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 19. Temporary Sector Unprotect Timing Diagram
38
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
AC CHARACTERISTICS
V
ID
IH
V
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Valid*
Status
Sector Protect/Unprotect
Verify
40h
Data
60h
60h
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 20. Sector Protect/Unprotect
Timing Diagram
April 23, 2010 Am29F160D_00_D10
Am29F160D
39
D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
Description
JEDEC
tAVAV
Std.
tWC
tAS
70, 75
90
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
70
90
tAVEL
0
ns
tELAX
tDVEH
tEHDX
tAH
45
30
45
45
ns
tDS
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
WE# Setup Time
WE# Hold Time
Min
Min
Min
Min
Typ
Typ
Typ
0
0
ns
ns
ns
ns
CE# Pulse Width
CE# Pulse Width High
35
45
tCPH
20
7
Byte
Programming Operation
(Note 2)
tWHWH1
tWHWH1
µs
Word
12
1
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
sec
Notes:
1. Not 100% tested.
2. See Erase and Programming Performance‚ on page 42 for more information.
40
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
AC CHARACTERISTICS
555 for program
PA for program
2AA for erase
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tWH
tAS
tAH
WE#
OE#
tGHEL
tWHWH1 or 2
tCP
CE#
Data
tWS
tCPH
tDS
tBUSY
tDH
DQ7#
DOUT
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence, with the device in word mode.
Figure 21. Alternate CE# Controlled Write Operation Timings
April 23, 2010 Am29F160D_00_D10
Am29F160D
41
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 3)
Unit
s
Comments
Sector Erase Time
1.0
25
7
8
Excludes 00h programming prior
to erasure (Note 4)
Chip Erase Time (Note 2)
Byte Programming Time
Word Programming Time
s
300
360
45
µs
µs
s
11
15
12
Excludes system level overhead
(Note 5)
Byte Mode
Word Mode
Chip Programming Time
(Note 2)
35
s
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 9
for further information on command definitions.
6. The device has a guaranteed minimum erase and
program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
VCC Current
–1.0 V
VCC + 1.0 V
+100 mA
–100 mA
Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter Symbol
Parameter Description
Input Capacitance
Test Setup
VIN = 0
Typ
6
Max
7.5
12
Unit
pF
CIN
COUT
CIN2
Output Capacitance
Control Pin Capacitance
VOUT = 0
VIN = 0
8.5
7.5
pF
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
10
Unit
Years
Years
150°C
125°C
Minimum Pattern Data Retention Time
20
42
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard Thin Small Outline Package
Dwg rev AA; 10/99
April 23, 2010 Am29F160D_00_D10
Am29F160D
43
D A T A S H E E T
REVISION SUMMARY
Revision C (November 16, 1999)
AC Characteristics—Figure 14. Program
Operations Timing and Figure 15. Chip/Sector
Erase Operations
Revision A (January 1999)
Initial release.
Deleted t
high.
and changed OE# waveform to start at
GHWL
Revision B (June 14, 1999)
Global
Physical Dimensions
Expanded data sheet into document with full specifica-
tions.
Replaced figures with more detailed illustrations.
Revision D (December 4, 2000)
Deleted the 55 ns speed options.
Removed Advance Information status from document.
Distinctive Characteristics
In the Ultra Low Power Consumption bullets, changed
the typical current to match the DC specifications
(CMOS Compatible) table.
Ordering Information
Deleted optional processing.
Table 9, Command Definitions
Revision B+1 (July 7, 1999)
In Note 5, changed the lower address bit in don’t care
range to A11.
Connection Diagrams
Table 11, Test Specifications
Corrected the signals on pins 39 and 40 of the reverse
TSOP package.
Changed capacitive loading on 70 ns speed option to
30 pF.
Revision B+2 (July 14, 1999)
Revision D+1 (November 18, 2003)
Global
Global
Changed the V operating range of the 70 ns speed
CC
option to 5.0 V 5ꢀ. Deleted all references to uniform
sector.
Added “70” speed option (70 ns, V = 5.0 V 10ꢀ).
CC
Revision D+2 (October 29, 2004)
Command Definitions table
Added Pb-Free option.
In Note 7, added a reference to CFI query mode.
Revision D+3 (April 4, 2005)
Revision B+3 (July 30, 1999)
Distinctive Characteristics
Global
Changed µm process technology number.
Changed the part number designator for the 70 ns
speed option to 75 (with V rated at 5.0 V 5ꢀ).
Changed terminology in WP# input pin description.
CC
DC Characteristics
Global
TTL/NMOS Compatible table: Changed the maximum
Changed WP# terminology throughout the data sheet.
current specification for I
to 50 mA.
CC2
Revision D4 (December 23, 2005)
Revision B+4 (September 10, 1999)
Global
Device Bus Operations
Deleted reverse TSOP package option and 120 ns
speed option.
Write Protect (WP#): Clarified explanatory text.
Command Definitions
Revision D5 (May 19, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Autoselect Command Sequence: Added text and table
explaining effect of WP# input on autoselect code
output for 16 Kbyte boot sector.
Changed t
specification to maximium value.
BUSY
Revision D6 (November 2, 2006)
Deleted “Not recommended for new designs” note.
44
Am29F160D
Am29F160D_00_D10 April 23, 2010
D A T A S H E E T
Revision D7 (March 5, 2009)
Revision D10 (April 23, 2010)
Global
Global
Added obsolescence information.
Added Extended Temperature Range option.
Revision D8 (August 3, 2009)
Global
Removed obsolescence information.
Revision D9 (November 17, 2009)
Global
Removed all commercial temperature range options.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 1999–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered
trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks
of their respective companies.
Copyright © 2006-2010 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
EcoRAM™ and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries.
Other names used are for informational purposes only and may be trademarks of their respective owners.
April 23, 2010 Am29F160D_00_D10
Am29F160D
45
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