AM29BL162CB-35DGI1 [SPANSION]
16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1; 16兆位（ 1一M× 16位） CMOS 3.0伏只，突发模式，引导扇区闪存裸片修订版1
| 型号： | AM29BL162CB-35DGI1 |
| 厂家： | 
SPANSION |
| 描述： | 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1 |
| 文件： | 总19页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Am29BL162C
Known Good Die
Data Sheet
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SUPPLEMENT
Am29BL162C Known Good Die
16 Megabit (1 M x 16-Bit)
CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory—Die
Revision 1
DISTINCTIVE CHARACTERISTICS
■ 32 words sequential with wrap around (linear
■ Minimum 100,000 erase cycle guarantee
32), bottom boot
per sector
■ 20-year data retention at 125°C
■ Compatibility with JEDEC standards
■ One 8 Kword, two 4 Kword, one 112 Kword, and
seven 128 Kword sectors
— Pinout and software compatible with single-
power supply Flash
■ Single power supply operation
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
— Superior inadvertent write protection
— Backward-compatible with AMD Am29LV and
Am29F flash memories: powers up in
■ Read access times
asynchronous mode for system boot, but can
immediately be placed into burst mode
22 ns burst access
(at extended temperature range)
■ Data# Polling and toggle bits
80 ns initial/random access
■ Alterable burst length via BAA# pin
■ Power dissipation (typical)
— Provides a software method of detecting program
or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Burst Mode Read: 15 mA @ 25 MHz,
20 mA @ 33 MHz
— Provides a hardware method of detecting
program or erase cycle completion
— Program/Erase: 20 mA
■ Erase Suspend/Erase Resume
— Standby mode, CMOS: 22 µA
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ 5 V-tolerant data, address, and control signals
■ Sector Protection
— Implemented using in-system or via
programming equipment
■ Hardware reset pin (RESET#)
— Hardware method to reset the device for reading
array data
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Tested to datasheet specifications at
■ Unlock Bypass Program Command
temperature
— Reduces overall programming time when issuing
multiple program command sequences
■ Quality and reliability levels equivalent to
standard packaged components
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Publication# 23783 Rev: A Amendment/+4
Issue Date: April 29, 2003
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29BL162C in Known Good Die (KGD) form is a
16 Mbit, 3.0 volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability
and quality as AMD products in packaged form.
fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
Am29BL162C Features
The Am29BL162C is organized as 1,048,576 words. It
is designed to be programmed in-system with the stan-
dard system 3.0-volt VCC supply. A 12.0-volt VPP or 5.0
VCC is not required for program or erase operations.
The device can also be programmed in standard
EPROM programmers.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
The device offers access times of 80 ns, allowing high
speed microprocessors to operate without wait states.
To eliminate bus contention the device has separate
chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
Hardware data protection measures include a low VCC
detector that automatically inhibits write operations dur-
ing power transitions. The hardware sector protection
feature disables both program and erase operations in
any combination of the sectors of memory. This can be
achieved in-system or via programming equipment.
Burst Mode Features
The Am29BL162C offers a Linear Burst mode—a
32 word sequential burst with wrap around—in a
bottom boot configuration only. This devices require
additional control pins for burst operations: Load
Burst Address (LBA#), Burst Address Advance
(BAA#), and Clock (CLK). This implementation allows
easy interface with minimal glue logic to a wide range
of microprocessors/microcontrollers for high perfor-
mance read operations.
The Erase Suspend/Erase Resume feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
AMD Flash Memory Features
Each device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations. The I/O and control
signals are 5V tolerant.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
The Am29BL162C is entirely command set compatible
with the JEDEC single-power-supply Flash stan-
dard. Commands are written to the command register
using standard microprocessor write timings. Register
contents serve as input to an internal state-machine
that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
Electrical Specifications
Refer to the Am29BL162C data sheet, publication
number 22142, for full electrical specifications on the
Am29BL162C in KGD form.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed) be-
2
Am29BL162C Known Good Die
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29BL162C
Speed Option
Regulated Voltage Range: VCC =3.0–3.6 V
80R
Max random/initial access time, ns (tACC, tIACC
)
80
80
Max CE# access time, ns (tCE
)
Max OE# and burst access time, ns (tOE, tBACC
)
22 (at 30 pF loading)
Am29BL162C Known Good Die
3
S U P P L E M E N T
AC CHARACTERISTICS
Burst Mode Read
Speed Options and
Temperature Ranges
Description
Parameter
JEDEC
Std.
80R
Unit
Initial Access Time
tIACC
Max
80
ns
LBA# Valid Clock to Output Delay (See Note)
Burst Access Time
tBACC
Max
24
ns
BAA# Valid Clock to Output Delay
tLBAS
tLBAH
tBAAS
LBA# Setup Time
LBA# Hold Time
BAA# Setup Time
Min
Min
Min
Min
Max
6
2
6
2
4
ns
ns
ns
ns
ns
tBAAH BAA# Hold Time
tBDH Data Hold Time from Next Clock Cycle
Address Setup Time to CLK
(See Note)
tACS
Min
Min
6
2
ns
ns
Address Hold Time from CLK
(See Note)
tACH
tOE
Output Enable to Output Valid
Output Enable to Output High Z
Chip Enable to Output High Z
CE# Setup Time to Clock
Max
Max
Min
Min
24
25
25
6
ns
ns
ns
ns
tOEZ
tCEZ
tCES
Note: Initial valid data will be output after second clock rising edge of LBA# assertion.
4
Am29BL162C Known Good Die
S U P P L E M E N T
AC Characteristics
Erase/Program Operations
Speed Options
Parameter
Description
JEDEC
tAVAV
Std
tWC
tAS
80R
Unit
ns
Write Cycle Time (Note 1)
Min
Min
Min
Min
Min
Min
80
tAVWL
tWLAX
tDVWH
tWHDX
Address Setup Time
Address Hold Time
Data Setup Time
ns
tAH
45
35
0
ns
tDS
ns
tDH
tOES
Data Hold Time
ns
Output Enable Setup Time
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHWL
tGHWL
Min
0
ns
tELWL
tWHEH
tWLWH
tWHWL
tWHWH1
tWHWH2
tCS
tCH
CE# Setup Time
Min
Min
Min
Min
Typ
Typ
Min
Min
Min
0
0
ns
ns
ns
ns
µs
sec
µs
ns
ns
CE# Hold Time
tWP
Write Pulse Width
35
30
9
tWPH
tWHWH1
tWHWH2
tVCS
Write Pulse Width High
Programming Operation (Note 2)
Sector Erase Operation (Note 2)
VCC Setup Time (Note 1)
Recovery Time from RY/BY#
Program/Erase Valid to RY/BY# Delay
3
50
0
tRB
tBUSY
90
Notes:
1. Not 100% tested.
Am29BL162C Known Good Die
5
S U P P L E M E N T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Speed
Parameter
Options
Description
JEDEC
tAVAV
Std
tWC
tAS
80R
Unit
ns
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Min
Min
Min
Min
Min
Min
80
tAVEL
ns
tELAX
tDVEH
tEHDX
tAH
45
35
0
ns
tDS
ns
tDH
tOES
Data Hold Time
ns
Output Enable Setup Time
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
tGHEL
tGHEL
Min
0
ns
tWLEL
tEHWH
tELEH
tWS
tWH
WE# Setup Time
Min
Min
Min
Min
Typ
Typ
0
0
ns
ns
WE# Hold Time
tCP
CE# Pulse Width
35
30
9
ns
tEHEL
tCPH
CE# Pulse Width High
Programming Operation (Note 2)
Sector Erase Operation (Note 2)
ns
tWHWsH1
tWHWH2
tWHWH1
tWHWH2
µs
3
sec
Notes:
1. Not 100% tested.
6
Am29BL162C Known Good Die
S U P P L E M E N T
DIE PHOTOGRAPH
DIE PAD LOCATIONS
51
11 10
9
8
7
6
5
4
3
2
1
52
50 49 48 47 46 45 44 43 42 41 40 39
AMD logo location
Y
X
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38
Am29BL162C Known Good Die
7
S U P P L E M E N T
PAD DESCRIPTIONS (RELATIVE TO PAD 1)
Pad Center (mils)
Pad Center (millimeters)
Pad
1
Signal
VCC
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15
VSS
X
Y
X
Y
0.00
0.00
0.00
0.00
2
–8.15
0.00
–0.21
–0.38
–0.63
–0.84
–1.09
–1.31
–1.55
–1.77
–2.01
–2.19
–2.19
–1.97
–1.75
–1.53
–1.31
–1.06
–0.80
–0.55
–0.29
–0.03
0.23
0.00
3
–15.02
–24.66
–33.23
–42.87
–51.43
–61.08
–69.64
–79.28
–86.15
–86.15
–77.53
–68.90
–60.28
–51.65
–41.60
–31.55
–21.50
–11.45
–1.16
0.00
0.00
4
0.00
0.00
5
0.00
0.00
6
0.00
0.00
7
0.00
0.00
8
0.00
0.00
9
0.00
0.00
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
0.00
0.00
0.00
0.00
N/C
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
–282.09
0.00
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
–7.16
0.00
A16
A15
A14
A13
A12
A11
A10
A9
A8
A19
VCC
LBA
WE#
RESET#
RY/BY#
A18
A17
A7
8.89
18.94
0.48
27.10
0.69
45.15
1.15
55.45
1.41
65.38
1.66
75.43
1.92
85.48
2.17
95.53
2.43
A6
105.58
115.63
125.68
135.73
144.36
152.98
161.60
170.23
170.23
156.98
148.40
138.76
130.19
120.55
111.98
102.34
93.78
2.68
A5
2.94
A4
3.19
A3
3.45
A2
3.67
A1
3.89
A0
4.10
CE#
VSS
4.32
4.32
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
0.00
3.99
0.00
0.00
3.77
0.00
0.00
3.52
0.00
0.00
3.31
0.00
0.00
3.06
0.00
0.00
2.84
0.00
0.00
2.60
0.00
0.00
2.38
0.00
8
Am29BL162C Known Good Die
S U P P L E M E N T
Pad Center (mils)
Pad Center (millimeters)
Pad
48
Signal
DQ11
VSS
X
Y
X
Y
84.13
76.52
66.47
56.42
16.28
0.00
0.00
0.00
0.00
0.00
2.14
1.94
1.69
1.43
0.41
0.00
0.00
0.00
0.00
0.00
49
50
CLK
51
BAA
52
IND#
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Am29BL162C Known Good Die
9
S U P P L E M E N T
PAD DESCRIPTIONS (RELATIVE TO DIE CENTER)
Pad Center (mils)
Pad Center (millimeters)
Pad
1
Signal
VCC
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15
VSS
X
Y
X
Y
–42.04
–50.19
–57.06
–66.70
–75.27
–84.91
–93.47
–103.12
–111.68
–121.32
–128.19
–128.19
–119.57
–110.94
–102.32
–93.69
–83.64
–73.59
–63.54
–53.49
–43.20
–33.15
–23.10
–14.94
3.11
139.03
139.03
139.03
139.03
139.03
139.03
139.03
139.03
139.03
139.03
139.03
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
–143.06
139.03
139.03
139.03
139.03
139.03
139.03
139.03
139.03
139.03
–1.07
–1.27
–1.45
–1.69
–1.91
–2.16
–2.37
–2.62
–2.84
–3.08
–3.26
–3.26
–3.04
–2.82
–2.60
–2.38
–2.12
–1.87
–1.61
–1.36
–1.10
–0.84
–0.59
–0.38
0.08
3.53
2
3.53
3
3.53
4
3.53
5
3.53
6
3.53
7
3.53
8
3.53
9
3.53
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
3.53
3.53
NC
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
–3.63
3.53
A16
A15
A14
A13
A12
A11
A10
A9
A8
A19
VCC
LBA
WE#
RESET#
RY/BY#
A18
A17
A7
13.41
0.34
23.34
0.59
33.39
0.85
43.44
1.10
53.49
1.36
A6
63.54
1.61
A5
73.59
1.87
A4
83.64
2.12
A3
93.69
2.38
A2
102.32
110.94
119.57
128.19
128.19
114.94
106.36
96.72
2.60
A1
2.82
A0
3.04
CE#
VSS
3.26
3.26
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
2.92
3.53
2.70
3.53
2.46
3.53
88.15
2.24
3.53
78.51
1.99
3.53
69.94
1.78
3.53
60.30
1.53
3.53
51.74
1.31
3.53
10
Am29BL162C Known Good Die
S U P P L E M E N T
Pad Center (mils)
Pad Center (millimeters)
Pad
48
Signal
DQ11
VSS
X
Y
X
Y
42.10
34.48
24.43
14.38
–25.76
139.03
139.03
139.03
139.03
139.03
1.07
0.88
0.62
0.37
–0.65
3.53
3.53
3.53
3.53
3.53
49
50
CLK
51
BAA
52
IND#
Note: The coordinates above are relative to the die center and can be used to operate wire bonding equipment.
Am29BL162C Known Good Die
11
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29BL162C
B
80R
DP
E
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
I
E
=
=
Industrial (–40°C to +85°C)
Extended (–55°C to +125°C)
H
=
Super Extended (–55°C to +145°C)
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
DG
DT
=
=
=
=
Waffle Pack
80 die per 5 tray stack
Gel-Pak® Die Tray
252 die per 6 tray stack
Surftape™ (Tape and Reel)
1600 per 7-inch reel
DW
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29BL162C Known Good Die
16 Megabit (1 M x 16-Bit) CMOS Flash Memory—Die Revision 1
3.0 Volt-only Program and Erase
Valid Combinations
DPI 1, DPE 1, DPH 1
DGI 1, DGE 1, DGH 1
DTI 1, DTE 1, DTH 1
DWI 1, DWE 1, DWH 1
Am29BL162CB-80R
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
12
Am29BL162C Known Good Die
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
Orientation relative to
leading edge of tape
and reel
AMD logo location
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
AMD logo location
Am29BL162C Known Good Die
13
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29BL162C product qualification database. AMD
implements quality assurance procedures throughout
the product test flow. These QA procedures also allow
AMD to produce KGD products without requiring or
implementing burn-in. In addition, an off-line qualifica-
tion maintenance program (QMP) guarantees AMD
standards are met on KGD products.
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 1
Data Retention
Bake
24 hours at 250°C
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 2
DC Parameters
Functionality
Programmability
Erasability
Wafer Sort 3
High Temperature
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Packaging for Shipment
Shipment
Figure 1. AMD KGD Product Test Flow
14
Am29BL162C Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . 269.7 mils x 303.94 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 6.85 mm x 7.72 mm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Wafer Sort Test . . . . . . . . . . . Sunnyvale, CA, USA &
. . . . . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Die Thickness . . . . . . . . . . . . . . . . . . . . . . . . .500 µm
Bond Pad Size . . . . . . . . . . . . . . . 4.69 mils x 4.69mils
. . . . . . . . . . . . . . . . . . . . . . . . . . 115.9 µm x 115.9 µm
Manufacturing ID (Bottom Boot) . . . . . . . . .98849ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . CS39LS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pad Area Free of Passivation . . . . . . . . . .13.99 mils2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
SPECIAL HANDLING INSTRUCTIONS
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Processing
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
DC OPERATING CONDITIONS
VCC (Supply Voltage) . . . . . . . . . . . . . . .3.0 V to 3.6 V
Operating Temperature
Industrial . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Extended . . . . . . . . . . . . . . . . . . –55°C to +125°C
Super Extended. . . . . . . . . . . . . –55°C to +145°C
Storage
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
DC PARAMETER EXCEPTIONS
The following specifications replace those given in the Am29BL162 data sheet (publication number 22142):
Parameter
Description
Test Conditions
Typ
Max
Unit
ICC3
VCC Standby Current (Note 2)
CE#, RESET# = VCC±0.3 V
22
35
µA
VCC Standby Current During Reset
(Note 2)
ICC4
RESET# = VSS ± 0.3 V
22
35
µA
OE# = VIH
OE# = VIL
30
30
50
50
µA
µA
Automatic Sleep Mode
(Notes 2, 3)
VIH = VCC ± 0.3 V;
IL = VSS ± 0.3 V
ICC5
V
Notes:
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns.
Am29BL162C Known Good Die
15
S U P P L E M E N T
AC CHARACTERISTICS
Read Operations
Speed Options and
Temperature Ranges
Description
Test Setup
Parameter
JEDEC Std.
80R
Unit
tAVAV
tRC Read Cycle Time (Note 1)
Min
Max
80
ns
CE# = VIL
OE# = VIL
tAVQV tACC Address to Output Delay
80
ns
tELQV
tGLQV
tCE Chip Enable to Output Delay
tOE Output Enable to Output Delay
OE# = VIL Max
Max
80
24
ns
ns
Chip Enable to Output High Z
(Note 1)
tEHQZ
tGHQZ
tDF
Max
24
ns
tDF Output Enable to Output High Z (Note 1)
Read
Max
Min
25
0
ns
ns
Output Enable
Hold Time (Note 1)
tOEH
Toggle and
Data# Polling
Min
Min
10
0
ns
ns
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
tAXQX
tOH
Notes:
1. Not 100% tested.
2. See Figure 13 and Table 10 for test specifications
16
Am29BL162C Known Good Die
S U P P L E M E N T
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
RESPECT TO THE DIE’S PROCESSING OF DATE
DATA, AND SHALL HAVE NO LIABILITY FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PAR-
TICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSI-
BILITY OF SUCH DAMAGES.
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective mate-
rials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for
environmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unau-
thorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REV-
ENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT,
OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replace-
ment Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original pur-
chase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instruc-
tions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the
above-referenced Warranty Exclusions. Buyer shall
ship such defective Die to AMD via AMD’s carrier, col-
lect. Risk of loss will transfer to AMD when the defec-
tive Die is provided to AMD’s carrier. If Buyer fails to
adhere to these warranty returns guidelines, Buyer
shall assume all risk of loss and shall pay for all freight
to AMD’s specified location. The aforementioned pro-
visions do not extend the original warranty period of
any Known Good Die that has either been repaired or
replaced by AMD.
Buyer agrees that it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reason-
ably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applica-
tions is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
Am29BL162C Known Good Die
17
S U P P L E M E N T
REVISION SUMMARY
Revision A (June 7, 2000)
Initial release.
Revision A+2 (September 11, 2002)
Changed title from Boot Sector Flash to Burst-mode,
Boot Sector Flash.
Revision A+1 (December 19, 2000)
Product Selector Guide
Corrected reference to BL162C data sheet publication
number.
Removed Note #2.
AC Characteristics
Ordering Information
Added Read Operations, Burst Mode Read, and Erase/
Program Operations and Alternate CE# Controlled
Erase/Program Operations Tables.
Added quantities for Waffle Pack, Gel-Pak, and Sur-
ftape.
Revision A+2 (September 11, 2002)
Revision A + 3 (April 29, 2003)
Product Test Flow
Moved Pad 11 on Die Pad Locations Diagram
Added Pad 52 to Pad Description Tables (Relative to
Pad 1 and Relative to Die Center)
Replaced text preceding Figure 1.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
18
Am29BL162C Known Good Die
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