SLD104AU [SONY]
AlGaAs Laser Diode; 的AlGaAs激光二极管
| 型号： | SLD104AU |
| 厂家： | 
SONY CORPORATION |
| 描述： | AlGaAs Laser Diode |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SLD104AU
AlGaAs Laser Diode
Description
The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the
SLD104U, this device attains even lower power consumption levels.
Features
• Low power consumption
• Single power supply
• Low noise
• Microminiaturized package (φ5.6mm)
Structure
• AlGaAs double hetero-type laser diode
• PIN photo diode for laser optical power output monitor
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po
5
2
mW
V
• Reverse voltage
VR LD
PD
15
V
• Operating temperature Topr
• Storage temperature Tstg
–10 to +60
–40 to +85
°C
°C
Pin Configuration
Connection Diagram
COMMON
3
2
1
PD
LD
2
1
3
1. LD anode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E89418B81-PS
SLD104AU
Electrical and Optical Characteristics (Tc = 25°C)
Tc: Case temperature
Item
Threshold current
Operating current
Operating voltage
Wavelength
Symbol
Ith
Condition
Min.
Typ.
45
Max.
60
Unit
mA
mA
V
Iop
Vop
λ
52
70
PO = 3mW
PO = 3mW
PO = 3mW
1.7
1.9
780
2.5
800
nm
760
PO = 3mW,
VR = 5V
Monitor current
Im
0.08
0.15
0.4
mA
Perpendicular
Parallel
θ
32
17
45
25
degree
degree
%
20
9
Radiation angle
(F. W. H. M. )
θ//
∆SR
PO = 3mW
1
Asymmetry
Position
20
∆X, ∆Y, ∆Z
±150
±3
µm
Positional
accuracy
PO = 3mW
PO = 3mW
Angle
∆φ
degree
mW/mA
Differential efficiency
Astigmatism
ηD
0.2
0.45
88
0.7
PO = 3mW
| Z// – Z |
AS
15
µm
dB
fC = 7.5MHz
∆f = 30kHz
PO = 4mW
Signal to noise ratio
S/N
Dark current of PD
Capacitance of PD
ID
VR = 5V
150
30
nA
pF
CT
VR = 5V, f = 1MHz
F. W. H. M. : Full Width at Half Maximum
1
Power
| SL – SR |
SL + SR
∆SR =
SL SR
θ//
–7° 0 7°
– 2 –
SLD104AU
Example of Representative Characteristics
Temperature characteristic of threshold current
100
Far field pattern (FFP)
1.0
0.5
0
PO = 3mW
50
45
10
–10
0
25
50
100
θ
TC – Case temperature [°C]
θ//
–40
–20
0
20
40
Angle [degree]
PIN diode current-voltage characteristics
Optical power output vs. Forward current characteristics
0.25 [mA]
I
5
Tc = 25°C
PO = 3mW
4
V
Tc = 25°C
Tc = 50°C
3
–1.0
1.0 [V]
0
2
1
–0.25
0
20
40
60
80
100
IF – Forward current [mA]
Relative light intensity vs. Waveform characteristics
Relative light intensity vs. Wavelength characteristics
PO = 3mW
PO = 5mW
778
779
780
781
782
780
781
782
783
784
λ – Wavelength [nm]
λ – Wavelength [nm]
– 3 –
SLD104AU
Package Outline
Unit: mm
M-259
Reference Slot
1.0
0.5
3
2
1
0
Window Glass φ0.8
φ5.6 – 0.05
φ4.4 MAX
φ3.8 MAX
0.5 MIN
0.6
Reference Plane
2
3
1
LD Chip & Photo Diode
3 – φ0.45
Optical
Distance = 1.35 ± 0.15
PCD φ2.0
SONY CODE
M-259
EIAJ CODE
JEDEC CODE
PACKAGE WEIGHT
0.3g
– 4 –
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