CXM3593UR-T9 [SONY]
DPDT, 2700MHz Max, 1 Func, 0.7dB Insertion Loss-Max, GAAS;
| 型号： | CXM3593UR-T9 |
| 厂家： | 
SONY CORPORATION |
| 描述： | DPDT, 2700MHz Max, 1 Func, 0.7dB Insertion Loss-Max, GAAS 射频 微波 光电二极管 |
| 文件： | 总11页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Power DPDT Switch
CXM3593UR
Description
The CXM3593UR is a high power DPDT switch for wireless communication systems.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets )
Features
◆ Low Insertion loss: 0.26dB (Typ.) (Cellular Band )
0.45 dB (Typ.) (IMT2000 )
◆Low voltage operation: VDD = 2.5 V
◆No DC blocking capacitors required on RF ports
◆2 Control input
◆Small package size: UQFN-12 pin (2.0 mm × 2.0 mm)
◆Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Moisture Sensitivity
Moisture Sensitivity Level for this part is MSL= 2 (Tentative)
Absolute Maximum Ratings
♦ Bias voltage
VDD
Vctl
4
4
V
V
(Ta = 25 ˚C)
♦ Control voltage
(Ta = 25 ˚C)
♦ Maximum input power
♦ Operating temperature
♦ Storage temperature
36
dBm
˚C
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
Topr
Tstg
–35 to +90
–65 to +150
˚C
This IC is ESD sensitive device. Special handling precautions are required.
1
CXM3593UR
Block Diagram
DPDT Antenna Switch
RF3
RF1
RF2
Decoder
Logic
RF4
F4
VDD
CTL 1/2
MMIC Switch
RF1
RF3
F1
F3
RF4
RF2
F2
Truth Table
CTL 1
L
CTL 2
H
Active path
F1,F3
ON
F2,F4
OFF
RF1-RF4
RF2-RF3
RF1-RF3
RF2-RF4
H
L
OFF
ON
2
CXM3593UR
Pin Configuration
(Top View)
11
12
10
VDD
CTL2
CTL1
1
2
3
RF4
9
8
7
UQFN-12P PKG
2.0m x 2.0mm
GND
RF1
5
4
6
DC Bias Condition
Parameter
VDD
Min.
2.5
1.35
0
Typ.
Max.
3.3
Unit
V
2.85
1.8
—
Vctl (H)
Vctl (L)
3.3
0.45
3
CXM3593UR
Target Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
Condition
Min.
―
Typ.
0.26
0.45
0.55
0.26
0.45
0.55
25
Max.
0.36
0.55
0.70
0.36
0.55
0.70
―
Unit
*1, *2, *6, *8
*3, *4, *7, *9
*5
RF1-RF4
RF2-RF3
―
―
Insertion Loss
IL
dB
*1, *2, *6, *8
*3, *4, *7, *9
*5
―
RF1-RF3
RF2-RF4
―
―
*1, *2, *6, *8
*3, *4, *7, *9
*5
22
16
14
22
16
15
RF1-RF4
RF2-RF3
18
―
16
―
Isolation
VSWR
ISO
dB
*1, *2, *6, *8
*3, *4, *7, *9
*5
26
―
RF1-RF3
RF2-RF4
19
―
17
―
All ports in
active paths
VSWR
P0.1
700 to 2700 MHz
800 to 2200 MHz
―
―
1.5
―
P0.1dB
Compression
Point
RF1-RF4, RF3
RF2-RF3, RF4
35
38
dBm
2fo
3fo
2fo
3fo
2fo
3fo
IMD2
―
―
―
―
―
―
―
-50
-49
-60
-56
-70
-68
―
–41
–41
–45
–45
–50
–50
–108
*6
RF1-RF4, RF3
RF2-RF3, RF4
Harmonics
*7
dBm
dBm
*2, *3, *5
Inter modulation
distortion in Rx
Band
*10, *11, *12, *15, *16, *19, *20, *23, *24
*10, *13, *14, *17, *18, *21, *22, *25, *26
RF1-RF4, RF3
RF2-RF3, RF4
IMD3
―
―
–108
Switching speed Ts
50 % Ctl to 90 % RF
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
Vctl = 1.8 V
―
―
―
―
3
5
20
5
µs
µs
Wakeup time
Control current
Supply current
Twu
Ictl
Idd
1
µA
mA
VDD = 2.85 V
0.15
0.25
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1 Pin = 25 dBm, 704 to 787 MHz
*2 Pin = 26 dBm, 824 to 960 MHz
(Band 13, Band 17)
(Band 5, Band 8)
*3 Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
*4 Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
*5 Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
*6 Pin = 35 dBm, 824 to 915 MHz
*7 Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
*8 Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx)
(GSM850/900 Tx)
*9 Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
*10 Measured with the recommended circuit.
4
CXM3593UR
IMD condition
IMD Condition
fTx
+20 dBm on RF
[MHz]
fBlocker
–15 dBm on ANT
[MHz]
fRx on RF
[MHz]
Band
IMD2 (fRx – fTx)
190
4090
1760
6040
80
*11
*12
*13
*14
*15
*16
*17
*18
*19
*20
*21
*22
*23
*24
*25
*26
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
IMD2 (fRx – fTx)
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
IMD2 (fRx – fTx)
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
IMD2 (fRx – fTx)
IMD2 (fRx + fTx)
IMD3 (2fTx – fRx)
IMD3 (2fTx + fRx)
Band 1
Band 2
Band 5
Band 7
2140
1960
880
1950
1880
835
3840
1800
5720
45
1715
790
2550
120
5190
2415
7725
2655
2535
5
CXM3593UR
Recommended Circuit
RF3
11
10
12
VDD
1
RF4
RF1
9
C2
CTL2
CTL1
2
3
8
7
C1
L1
5
6
4
L1
C1
RF2
*1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
*2 The DC levels of all RF ports are GND.
*3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection.
*4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor.
6
CXM3593UR
Recommended Land Pattern
7
CXM3593UR
Package Outline
(Unit: mm)
8
CXM3593UR
Marking
9
CXM3593UR
Tape and Reel Size
CXM3593UR-T9
10
CXM3593UR
Note
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
11
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