SM7331-BBE [SMI]
Low Pressure Digital Sensor;
| 型号： | SM7331-BBE |
| 厂家： | 
Silicon Microstructures, Inc. |
| 描述： | Low Pressure Digital Sensor |
| 文件： | 总8页 (文件大小：741K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Pressure Digital Sensor
SM7331-BBE/BCE-S-020-000
Differential Pressure Sensor
FEATURES
•
•
•
Pressure range from -20 to 20mBar; differential output
1.0%FS accuracy
16-bit digital, pressure calibrated and temperature compensated
output
•
•
•
•
I2C Digital Interface
Compensated temperature range: -20 to 85oC
Robust JEDEC SOIC-16 package for automated assembly
Manufactured according to ISO9001 and ISO/TS 16949 standards
DESCRIPTION
The SM7331 is a digital, ultra-low pressure MEMS sensor offering
state-of-the-art pressure transducer technology and CMOS mixed
signal processing technology to produce a digital, fully conditioned,
multi-order pressure and temperature compensated sensor in JEDEC
standard SOIC-16 package with a dual vertical or a dual horizontal
porting option. It is available in a differential pressure configuration.
Combining the pressure sensor with a signal-conditioning ASIC in a
single package simplifies the use of advanced silicon micro-machined
pressure sensors. The pressure sensor can be mounted directly on a
standard printed circuit board and a high level, calibrated pressure
signal can be acquired from the digital interface. This eliminates the
need for additional circuitry, such as a compensation network or
microcontroller containing a custom correction algorithm.
The SM7331 is shipped in sticks or tape & reel.
Medical
Industrial
Sleep Apnea
Airflow Measurement
Pneumatic Gauges
Pressure Switches
Safety Cabinets
CPAP
Ventilators
Gas Flow Instrumentation
Air Flow Monitors
Life Sciences
Gas Flow Instrumentation
HVAC
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
DOC # 40DS7338.01
Page 1
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SM7331-BBE/BCE-S-020-000
1. Absolute Maximum Ratings
All parameters are specified at Vdd = 3.3 V supply voltage at 25oC, unless otherwise noted.
No.
Characteristic
Supply Voltage
Symbol
VDD
Minimum
Typical
Maximum
Units
V
1
2
3
4
5
6
7
3.0
5.5
Supply Current
IVDD
3.2
mA
°C
Compensated Temperature(b)
Operating Temperature(a)
Storage Temperature(a)
Proof Pressure(a, c)
TCOMP
TOP
-20
-20
-40
+85
+85
°C
TSTG
+125
+/-100
+/-200
°C
PProof
PBurst
mBar
mBar
Burst Pressure(a, d)
Notes:
a. Tested on a sample basis.
b. Clean, dry gas compatible with wetted materials. Wetted materials include silicon, epoxy, RTV (silicon), gold, aluminum and mold compound.
c. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to
the operating pressure range
d. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device.
2. ESD
No.
Description
Symbol
Minimum
Maximum
Units
2.1
ESD HBM Protection at all Pins
VESD(HBM)
-2
2
kV
3. External Components
No.
Description
Symbol
CVDD
Min.
Typ.
100
Max.
Units
nF
1
2
Supply bypass capacitor*
I2C Data and clock pull up resistors*
RP
4.7
kOhm
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
DOC # 40DS7338.01
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SM7331-BBE/BCE-S-020-000
4. OPERATING CHARACTERISTICS TABLE
All parameters are specified at Vdd = 3.3 V DC supply voltage at 25oC, unless otherwise noted.
No.
9
Characteristic
Supply Voltage
Supply Current
Symbol
VDD
Minimum
Typical
3.3
Maximum
Units
V
3.0
3.6
10
IVDD
3
mA
11 Digital Pressure Output @ PMIN (-20 mBar)
12 Digital Pressure Output @ PMAX (20 mBar)
OUTMIN
OUTMAX
FS
-26,214
+26,214
52,428
16
Counts
Counts
Counts
Bits
13
14
15
16
17
Digital Full Scale Span
Resolution (Digital Output)
Update Rate
2000
125
S/sec
Hz
Bandwidth
BW
Digital Output Accuracy(e)
ACC
-1
+1
%FS
Notes:
e. The accuracy specification applies over all operating conditions. This specification includes the combination of linearity, repeatability, and
hysteresis errors over pressure, temperature, and voltage.
Qualification Standards
REACH Compliant
RoHS Compliant
PFOS/PFOA Compliant
For qualification specifications, please contact Sales at sales@si-micro.com
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
DOC # 40DS7338.01
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SM7331-BBE/BCE-S-020-000
SOIC-16 Dual Vertical Package Dimensions
Notes:
•
•
•
•
•
•
All dimensions in units of [mm]
Moisture Sensitivity Level (MSL): Level 3
Wetted materials: silicon, RTV (silicone), gold, aluminum, epoxy and mold compound.
Tolerance on all dimensions ±0.13 mm unless otherwise specified.
[B] is tube connected to bottom side of sensor die.
[T] is tube connected to top side of sensor die. Topside pressure is positive pressure. An increase in topside pressure will result in an
increase in sensor output
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Silicon Microstructures, Inc. 2001-2019. All rights reserved
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SM7331-BBE/BCE-S-020-000
SOIC-16DualHorizontal PackageDimensions
Notes:
•
•
•
•
•
•
All dimensions in units of [mm]
Moisture Sensitivity Level (MSL): Level 3
Wetted materials: silicon, RTV (silicone), gold, aluminum, epoxy and mold compound.
Tolerance on all dimensions ±0.13 mm unless otherwise specified.
[B] is tube connected to bottom side of sensor die.
[T] is tube connected to top side of sensor die. Topside pressure is positive pressure. An increase in topside pressure will result in an
increase in sensor output
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Silicon Microstructures, Inc. 2001-2019. All rights reserved
DOC # 40DS7338.01
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SM7331-BBE/BCE-S-020-000
SM7331 Applications Circuit
NOTES:
•
The bypass capacitor C should be placed in close proximity to the device.
Package Labeling
Pin No.
1
Pin Function
NC (No Connect)
2
3
NC
NC
4
VSS
VDD
NC
5
6
7
NC
8
NC
9
NC
10
11
12
13
14
15
16
SDA
SCL
NC
NC
NC
NC
NC
NOTES:
•
Do not connect to NC pins
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Package Pin-Out
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SM7331-BBE/BCE-S-020-000
Part Number Legend
SM7331 BBE S 020 000
Counter
Silicon Microstructures
S: Stick
T: Tape & Reel
Accuracy
1: 1%
Pressure Range
(mBar)
Temp Range:
C: -20 to +85°C
Low Pressure
3: 16bit digital
3: Differential
BB: SO16 Package w/ dual horizontal port
BC: SO16 Package w/ dual vertical port
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DOC # 40DS7338.01
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SM7331-BBE/BCE-S-020-000
Silicon Microstructures Warranty and Disclaimer:
Silicon Microstructures, Inc. reserves the right to make changes without further notice to any product herein and
to amend the contents of this data sheet at any time and at its sole discretion.
Information in this document is provided solely to enable software and system implementers to use Silicon
Microstructures, Inc. products and/or services. No express or implied copyright licenses are granted hereunder to
design or fabricate any silicon-based microstructures based on the information in this document.
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including without limitation consequential or incidental damages. “Typical” parameters which may be provided in
Silicon Microstructure’s data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals”, must be validated for each
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© Silicon Microstructures, Inc. 2001-2019. All rights reserved.
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