63CPQ080 [SMC]

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance;
63CPQ080
型号: 63CPQ080
厂家: Sangdest Microelectronic (Nanjing) Co., Ltd    Sangdest Microelectronic (Nanjing) Co., Ltd
描述:

High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

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SANGDEST  
63CPQ080  
63CPQ100  
MICROELECTRONICS  
Technical Data  
Data Sheet N0208, Rev. A  
Green Products  
63CPQ080/63CPQ100 SCHOTTKY RECTIFIER  
Applications:  
Switching power supply  
Converters  
Free-Wheeling diodes  
Reverse battery protection  
Features:  
150 °C TJ operation  
Center tap TO-247AD package  
Low forward voltage drop  
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and  
moisture resistance  
High frequency operation  
Guard ring for enhanced ruggedness and long term reliability  
Green Products in Compliance with the RoHS Directive  
This is a Pb Free Device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
Mechanical Dimensions: In mm  
SYMBOL  
MIN.  
TYP.  
MAX.  
A
A1  
A2  
b
b1  
b2  
c
4.80  
2.21  
1.90  
1.10  
5.00  
2.41  
2.00  
1.20  
2.00  
3.00  
0.60  
5.20  
2.61  
2.10  
1.35  
0.55  
0.75  
D
D1  
D2  
E
E1  
E2  
E3  
e
20.80  
21.00  
16.55  
1.20  
15.80  
13.30  
5.00  
21.20  
15.60  
16.00  
2.50  
5.44  
L
L1  
P
P1  
P2  
Q
S
T
U
19.42  
3.50  
19.92  
4.13  
3.60  
20.42  
3.70  
7.40  
2.50  
5.80  
6.15  
10.00  
6.20  
6.05  
6.25  
TO-247AD(HD)  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
SANGDEST  
63CPQ080  
63CPQ100  
MICROELECTRONICS  
Technical Data  
Data Sheet N0208, Rev. A  
Green Products  
Marking Diagram:  
Where XXXXX is YYWWL  
= Forward Current (60A)  
63  
C
= Configuration  
= Device Type  
= Reverse Voltage (80/100V)  
= SSG  
= Year  
PQ  
80/100  
SSG  
YY  
WW  
L
= Week  
= Lot Number  
63CPQ080  
63CPQ100  
CautionsMolding resin  
Epoxy resin UL:94V-0  
Ordering Information:  
Device  
Package  
TO-247AD (Pb-Free)  
Shipping  
63CPQ080/100  
30pcs/ tube  
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specification.  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
Symbol  
VRWM  
Condition  
Max.  
80(63CPQ080)  
100(63CPQ100)  
60  
Units  
V
-
Average Forward Current  
IF(AV)  
50% duty cycle @TC = 105°C,  
rectangular wave form  
A
Peak One Cycle Non-  
Repetitive Surge Current  
(per leg)  
Non-Repetitive Avalanche  
Energy(per leg)  
IFSM  
EAS  
8.3 ms, half Sine pulse  
492  
15  
A
TJ=25,IAS=1A,  
L=30 mH  
mJ  
Repetitive Avalanche  
Current(per leg)  
Current decaying linearly to  
zero in 1 μ sec Frequency  
limited by TJ max. VA=1.5×VR  
typical  
IAR  
1
A
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
SANGDEST  
63CPQ080  
63CPQ100  
MICROELECTRONICS  
Technical Data  
Data Sheet N0208, Rev. A  
Green Products  
Electrical Characteristics:  
Characteristics  
Forward Voltage Drop  
(per leg) *  
Symbol  
VF1  
Condition  
@ 30A, Pulse, TJ = 25 °C  
@ 30A, Pulse, TJ = 125 °C  
Max.  
Units  
V
V
0.80  
0.75  
0.3  
VF2  
IR1  
Reverse Current (per leg) *  
@VR = rated V  
R
mA  
TJ = 25 °C  
IR2  
CJ  
@VR = rated V  
TJ = 125 °C  
@VR = 5V, TC = 25 °C  
fSIG = 1MHz  
Measured lead to lead 5 mm from  
package body  
R
25.0  
1300  
7.5  
mA  
pF  
Junction Capacitance  
(per leg)  
Typical Series Inductance  
(per leg)  
LS  
nH  
Voltage Rated of Change  
dv/dt  
-
10,000  
V/μs  
* Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications:  
Characteristics  
Symbol  
Condition  
Specification  
-55 to +150  
-55 to +150  
0.8(per leg)  
Units  
°C  
°C  
Junction Temperature  
Storage Temperature  
TJ  
Tstg  
-
-
Maximum Thermal  
Resistance Junction to Case  
(per leg)  
Maximum Thermal  
Resistance, Case to Heat  
Sink  
DC operation  
RθJC  
RθCS  
wt  
°C/W  
°C/W  
0.4(per device)  
0.25  
Mounting surface, smooth and  
greased  
Approximate Weight  
Case Style  
-
6.7  
g
TO-247AD  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
SANGDEST  
63CPQ080  
63CPQ100  
MICROELECTRONICS  
Technical Data  
Data Sheet N0208, Rev. A  
Green Products  
10000  
10  
1
TJ=125℃  
TJ=25℃  
0.1  
1000  
100  
TJ=25℃  
0.01  
0.001  
0.0001  
0
5
10 15 20 25 30 35 40  
Reverse Voltage (V)  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
Percent of Rated Peak Reverse Voltage (%)  
Fig.2-Typical Reverse Characteristics  
Fig.1-Typical Junction Capacitance  
100  
TJ=125℃  
10  
1
TJ=25℃  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
Forward Voltage Drop (V)  
Fig.3-Typical Instantaneous Forward Voltage Characteristics  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
SANGDEST  
63CPQ080  
63CPQ100  
MICROELECTRONICS  
Technical Data  
Data Sheet N0208, Rev. A  
Green Products  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales  
department for the latest version of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement .  
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or  
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd  
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,  
products or circuits described in the datasheets.  
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any  
secondary damage resulting from use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics  
(Nanjing) Co., Ltd.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC  
- Sangdest Microelectronics (Nanjing) Co., Ltd.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations..  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  

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