203CMQ080 [SMC]
SCHOTTKY RECTIFIER;
| 型号： | 203CMQ080 |
| 厂家： | 
Sangdest Microelectronic (Nanjing) Co., Ltd |
| 描述： | SCHOTTKY RECTIFIER 局域网 二极管 |
| 文件： | 总4页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SANGDEST
MICROELECTRONICS
203CMQ SERIES
Technical Data
Data Sheet N0989, Rev. D
203CMQ080/100 SCHOTTKY RECTIFIER
Applications:
● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
● Reverse battery protection ● Converters ● UPS System ● Welding
Features:
•
175℃ TJ operation
•
•
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
•
•
•
•
•
•
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Product contain Pb
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/Inches
PRM4 (Isolated)
MARKING,MOLDING RESIN
Marking for 203CMQ080/100, 1st row SS YYWWL, 2nd row 203CMQ080/100
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 ꢀ (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
203CMQ SERIES
Technical Data
Data Sheet N0989, Rev. D
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
80
203CMQ080
V
100 203CMQ100
Average Forward Current
IF(AV)
50% duty cycle @TC =110°C,
rectangular wave form
100
200
per leg
per device
A
Peak One Cycle Non-
Repetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(peg leg)
IFSM
EAS
IAR
8.3 ms, half Sine pulse
2520
A
mJ
A
15
1
TJ=25℃,IAS=1A,L=30mH
Repetitive Avalanche
Current(peg leg)
Current decaying linearly to zero
in 1 μsec Frequency limited by
TJ max. VA=1.5×VR typical
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Forward Voltage Drop
(per leg) *
@ 100A, Pulse, TJ = 25 °C
@ 200A, Pulse, TJ = 25 °C
@ 100A, Pulse, TJ = 125 °C
@ 200A, Pulse, TJ = 125 °C
0.86
1.03
VF1
V
0.70
0.84
VF2
V
Reverse Current (per leg) *
IR1
IR2
3
40
mA
mA
@VR = rated V
R
TJ = 25 °C
TJ = 125 °C
@VR = rated V
R
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
@VR = 5V, TC = 25 °C
SIG = 1MHz
Measured lead to lead 5 mm
CT
LS
2650
7.0
pF
nH
f
from package body
Voltage Rate of Change
Insulation Voltage
dv/dt
VRMS
-
-
10,000
1000
V/μs
V
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Symbol
TJ
Condition
Specification
-55 to +175
-55 to +175
Units
°C
°C
-
-
Tstg
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance Junction to Case
(per package)
DC operation
DC operation
0.70
RθJC
°C/W
0.35
0.10
RθJC
Rθcs
°C/W
°C/W
Typical Thermal Resistance,
case to Heat Sink
Mounting surface, smooth
and greased
Mounting
24(min)
35(max)
35(min)
46(max)
Torque
Terminal
Torque
Mounting Torque
TM
-
-
Kg-cm
g
Approximate Weight
Case Style
wt
79
PRM4 Isolated
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 ꢀ (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
203CMQ SERIES
Technical Data
Data Sheet N0989, Rev. D
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 ꢀ (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
203CMQ SERIES
Technical Data
Data Sheet N0989, Rev. D
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 ꢀ (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
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