SIT1602B [SITIME]
Low Power, Standard Frequency Oscillator;
| 型号： | SIT1602B |
| 厂家： | 
SiTime Corporation |
| 描述： | Low Power, Standard Frequency Oscillator |
| 文件： | 总17页 (文件大小：1156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiT1602B
Low Power, Standard Frequency Oscillator
Features
Applications
52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
Instant samples with Time Machine II and Field Programmable
Oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
52 standard frequencies between
3.57 MHz and 77.76 MHz
MHz
Refer to Table 13 for the exact list of supported frequencies
Output Frequency Range
f
Frequency Stability and Aging
-20
-25
-50
–
–
–
+20
+25
+50
ppm
ppm
ppm
Frequency Stability
F_stab
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
supply voltage and load.
Operating Temperature Range
-20
-40
–
–
+70
+85
°C
°C
Extended Commercial
Industrial
Operating Temperature Range
Supply Voltage
T_use
Vdd
Supply Voltage and Current Consumption
1.62
2.25
2.52
2.7
2.97
2.25
–
1.8
2.5
2.8
3.0
3.3
–
1.98
2.75
3.08
3.3
V
V
Contact SiTime for 1.5V support
V
V
3.63
3.63
4.5
V
V
3.8
3.7
3.5
–
mA
mA
mA
mA
mA
A
A
A
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
No load condition, f = 20 MHz, Vdd = 2.5V
Current Consumption
Idd
–
4.2
–
4.1
No load condition, f = 20 MHz, Vdd = 1.8V
–
4.2
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
Vdd = 1.8 V. OE = GND, Output in high-Z state
OE Disable Current
Standby Current
I_OD
I_std
–
–
4.0
–
2.6
1.4
0.6
4.3
S
̅
T
̅
̅
= GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
= GND, Vdd = 2.5V, Output is weakly pulled down
S̅ T̅ ̅ = GND, Vdd = 1.8V, Output is weakly pulled down
–
2.5
S̅ T̅ ̅
–
1.3
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
–
1
55
2
%
ns
ns
ns
All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Rise/Fall Time
Tr, Tf
–
1.3
–
2.5
2
–
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
Output High Voltage
Output Low Voltage
VOH
VOL
90%
–
–
Vdd
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Rev 1.04
January 30, 2018
www.sitime.com
SiT1602B Low Power, Standard Frequency Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Input Characteristics
Input High Voltage
VIH
VIL
70%
–
–
–
–
30%
150
–
Vdd
Pin 1, OE or S
Pin 1, OE or S
Pin 1, OE logic high or logic low, or S
Pin 1, S logic low
̅ T̅ ̅
Input Low Voltage
Vdd
k
̅ T̅ ̅
Input Pull-up Impedance
Z_in
50
2
87
–
̅ T̅ ̅ logic high
̅ T̅ ̅
M
Startup and Resume Timing
Startup Time
T_start
T_oe
–
–
–
–
–
–
5
ms
ns
Measured from the time Vdd reaches its rated minimum value
f = 77.76 MHz. For other frequencies, T_oe = 100 ns + 3 *
Enable/Disable Time
Resume Time
138
5
T_resume
ms
Measured from the time S̅ T̅ ̅ pin crosses 50% threshold
Jitter
RMS Period Jitter
T_jitt
T_pk
T_phj
–
–
–
–
–
–
1.8
1.8
12
3
3
ps
ps
ps
ps
ps
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
25
30
0.9
2
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
14
0.5
1.3
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Table 2. Pin Description
Pin
Symbol
Functionality
H[1]: specified frequency output
Top View
Output Enable
L: output is high impedance. Only output driver is disabled.
H[1]: specified frequency output
OE/ST/NC
GND
VDD
OUT
1
OE/S̅ T̅ ̅ /NC
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 has no function.
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
Electrical ground
Oscillator output
Power supply voltage[2]
Figure 1. Pin Assignments
Notes:
1. In OE or S̅ T̅ ̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
-65
-0.5
–
Max.
150
4
Unit
°C
V
StorageTemperature
Vdd
2000
V
ElectrostaticDischarge
Soldering Temperature (follow standard Pb free
soldering guidelines)
–
–
260
150
°C
°C
JunctionTemperature[3]
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration[4]
JA, 4 Layer Board
JA, 2 Layer Board
JC, Bottom
Package
(°C/W)
(°C/W)
(°C/W)
7050
5032
3225
2520
2016
142
97
273
199
212
222
252
30
24
27
26
36
109
117
152
Note:
4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Table 5. Maximum Operating JunctionTemperature[5]
Max Operating Temperature(ambient)
Maximum Operating JunctionTemperature
70°C
85°C
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Condition/TestMethod
MIL-STD-883F, Method2002
Mechanical Shock
Mechanical Vibration
TemperatureCycle
Solderability
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method2003
MSL1 @ 260°C
Moisture Sensitivity Level
Rev 1.04
Page 3 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Test Circuit and Waveform[6]
Vdd
Vout
Test Point
tr
tf
4
3
80% Vdd
50%
Power
Supply
0.1 uF
15pF
2
(including probe
and fixture
capacitance)
1
20% Vdd
High Pulse
(TH)
Low Pulse
(TL)
Vdd
OE/ST Function
Period
1 kΩ
Figure 2. Test Circuit
Figure 3. Waveform
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagrams
Vdd
Vdd
90% Vdd
50% Vdd
[7]
T_start
T_resume
No Glitch
Pin 4 Voltage
ST Voltage
during start up
CLK Output
CLK Output
HZ
HZ
T_start: Time to start from power-off
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ S̅ T̅ ̅ Mode)
Figure 5. Standby Resume Timing ( S
̅
T
̅
̅
ModeOnly)
Vdd
T_oe
Vdd
50% Vdd
OE Voltage
OE Voltage
CLK Output
50% Vdd
T_oe
CLK Output
HZ
HZ
T_oe: Time to re-enable the clock output
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.
Rev 1.04
Page 4 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Performance Plots[8]
1.8 2.5 2.8 3.0 3.3
DUT1
DUT6
DUT2
DUT7
DUT3
DUT8
DUT4
DUT9
DUT5
DUT10
5.2
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
20
15
10
5
0
-5
-10
-15
-20
-40
-20
0
20
40
60
80
10
20
30
40
50
60
70
80
Figure 8. Idd vs Frequency
Figure 9. Frequency vsTemperature
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
55
54
53
52
51
50
49
48
47
46
45
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
Figure 10. RMS Period Jitter vs Frequency
Figure 11. Duty Cycle vs Frequency
1.8 V
2.5 V
2.8 V
3.0 V
3.3V
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Figure 12. 20%-80% Rise Timevs Temperature
Figure 13. 20%-80% Fall Time vsTemperature
Rev 1.04
Page 5 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Performance Plots[8]
1.8 V
2.5 V 2.8 V 3.0 V 3.3
V
1.8 V
2.5 V 2.8 V
3.0 V 3.3 V
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.8
1.6
1.4
1.2
1.0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
Figure 14. RMS Integrated Phase JitterRandom
(12 kHz to 20 MHz) vs Frequency[9]
Figure 15. RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency[9]
Notes:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.
Rev 1.04
Page 6 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
The SiT1602 can support up to 60 pF or higher in
maximum capacitive loads with drive strength settings.
Refer to the Rise/Fall Time Tables (Table 7 to 11) to
determine the proper drive strength for the desired
combination of output load vs. rise/fall time.
Programmable Drive Strength
The SiT1602 includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the
clock rise/fall time for specific applications. Benefits from
the programmable drive strength feature are:
Improves system radiated electromagnetic interference
(EMI) by slowing down the clock rise/fall time
Improves the downstream clock receiver’s (RX) jitter
by decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates.
SiT1602 Drive Strength Selection
Tables 7 through 11 define the rise/fall time for a given
capacitive load and supply voltage.
1. Select the table that matches the SiT1602 nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the
For more detailed information about rise/fall time control
and drive strength selection, see the SiTime Application
Notes section.
application requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the
desired rise/fall times.
EMI Reduction by Slowing Rise/Fall Time
4. The left-most column represents the part number
code for the corresponding drive strength.
Figure 16 shows the harmonic power reduction as the
rise/fall times are increased (slowed down). The rise/fall
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a square wave. For
the ratio of 0.45, the rise/fall times are very close to near-
triangular waveform. These results, for example, show that
the 11th clock harmonic can be reduced by 35 dB if the
rise/fall edge is increased from 5% of the period to 45% of
the period.
5. Add the drive strength code to the part number for
ordering purposes.
Calculating Maximum Frequency
Any given rise/fall time in Table 7 through 11 dictates the
maximum frequency under which the oscillator can operate
with guaranteed full output swing over the entire operating
temperature range. This max frequency can be calculated
as the following:
trise=0.05
trise=0.1
10
0
trise=0.15
trise=0.2
trise=0.25
trise=0.3
trise=0.35
trise=0.4
trise=0.45
1
-10
-20
-30
-40
-50
-60
-70
-80
Max Frequency =
5 x Trf_20/80
where Trf_20/80 is the typical value for 20%-80%
rise/fall time.
Example 1
Calculate fMAX for the following condition:
1
3
5
7
9
11
Vdd = 1.8V (Table 7)
Harmonic number
Figure 16. Harmonic EMI reduction as a Function
of Slower Rise/Fall Time
Capacitive Load: 30 pF
Desired Tr/f time = 3 ns
(rise/fall time part number code = E)
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the
downstream chipset. One way to reduce this jitter is to
speed up the rise/fall time of the input clock. Some chipsets
may also require faster rise/fall time in order to reduce
their sensitivity to this type of jitter. Refer to the Rise/Fall
Time Tables (Table 7 to Table 11) to determine the proper
drive strength.
fMAX = 66.666660
Part number for the above example:
SiT1602BIE12-18E-66.666660
High Output Load Capability
Drive strength code is inserted here. Default setting is “-”
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strength, the rise/fall time becomes slower as the output
load increases. As an example, for a 3.3V SiT1602 device
with default drive strength setting, the typical rise/fall time is
1 ns for 15 pF output load. The typical rise/fall time slows
down to 2.6 ns when the output load increases to 45 pF.
One can choose to speed up the rise/fall time to 1.83 ns by
then increasing the drive strength setting on the SiT1602.
Rev 1.04
Page 7 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 8. Vdd = 2.5V Rise/Fall Times
for Specific CLOAD
Table 7. Vdd = 1.8V Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
Drive Strength \CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
4.13
2.11
1.45
1.09
0.62
8.25
4.27
2.81
2.20
1.28
12.82
7.64
5.16
3.88
2.27
21.45
11.20
7.65
5.86
3.51
27.79
14.49
9.88
7.57
4.45
L
A
R
B
T
E
U
6.16
3.19
2.11
1.65
0.93
0.78
0.70
0.65
11.61
6.35
4.31
3.23
1.91
1.66
1.48
1.30
22.00
11.00
7.65
5.79
3.32
2.94
2.64
2.40
31.27
16.01
10.77
8.18
4.66
4.09
39.91
21.52
14.47
11.08
6.48
T
E or "‐": default
5.74
5.09
0.54
0.43
0.34
1.00
0.96
0.88
2.01
1.81
1.64
3.10
2.79
2.54
4.01
3.65
3.32
3.68
U
F
F or "‐": default
3.35
4.56
Table 9. Vdd = 2.8V Rise/Fall Times
for Specific CLOAD
Table 10. Vdd = 3.0V Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
3.60
1.84
1.22
0.89
0.51
0.38
0.30
0.27
15 pF
7.21
3.71
2.46
1.92
1.00
0.92
0.83
0.76
30 pF
11.97
6.72
4.54
3.39
1.97
1.72
1.55
1.39
45 pF
18.74
9.86
6.76
5.20
3.07
2.71
2.40
2.16
60 pF
24.30
12.68
8.62
6.64
3.90
3.51
3.13
2.85
Drive Strength \ CLOAD
5 pF
3.77
1.94
1.29
0.97
0.55
15 pF
7.54
3.90
2.57
2.00
1.12
30 pF
12.28
7.03
4.72
3.54
2.08
45 pF
19.57
10.24
7.01
5.43
3.22
60 pF
25.27
13.34
9.06
6.93
4.08
L
A
R
B
L
A
R
B
T
T or "‐": default
E
U
F
E or "‐": default
0.44
0.34
0.29
1.00
0.88
0.81
1.83
1.64
1.48
2.82
2.52
2.29
3.67
3.30
2.99
U
F
Table 11. Vdd = 3.3V Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
A
R
B
3.39
1.74
1.16
0.81
6.88
3.50
2.33
1.82
11.63
6.38
4.29
3.22
17.56
8.98
6.04
4.52
23.59
12.19
8.34
6.33
T or "‐": default
0.46
0.33
0.28
0.25
1.00
0.87
0.79
0.72
1.86
1.64
1.46
1.31
2.60
2.30
2.05
1.83
3.84
3.35
2.93
2.61
E
U
F
Rev 1.04
Page 8 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Pin 1 Configuration Options (OE, S̅ T̅ ̅ , or NC)
Pin 1 of the SiT1602 can be factory-programmed to support
three modes: Output Enable (OE), Standby (S ) or
̅ T̅ ̅
No Connect (NC). These modes can also be programmed
with the Time Machine using field programmabledevices.
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only dis-
ables the output driver and puts it in Hi-Z mode. The core
of the device continues to operate normally. Power con-
sumption is reduced due to the inactivity of the output.
When the OE pin is pulled High, the output is typically
enabled in <1 µs.
Figure 17. Startup Waveform vs. Vdd
(Zoomed-in View of Figure 17)
Standby (S̅ T̅ ̅ ) Mode
Instant Samples with Time Machine and
Field Programmable Oscillators
In the S̅ T̅ ̅
mode, a device enters into the standby mode when
Pin 1 pulled Low. All internal circuits of the device are turned
off. The current is reduced to a standby current, typically in
the range of a few µA. When S
device goes through the “resume” process, which can take
up to 5 ms.
SiTime supports a field programmable version of the
SiT1602 low power oscillator for fast prototyping and real
time customization of features. The field programmable
devices (FP devices) are available for all five standard
SiT1602 package sizes and can be configured to one’s
exact specification using the Time Machine II, an USB
powered MEMS oscillator programmer.
̅
T
̅
̅
is pulled High, the
No Connect (NC) Mode
In the NC mode, the device always operates in its normal
mode and outputs the specified frequency regardless of the
logic level on pin 1.
Customizable Features of the SiT1602 FP Devices Include
Table 12 below summarizes the key relevant parameters in
52 standard frequencies between 3.75 MHz and
77.76 MHz (Refer to the frequency list on page12)
Three frequency stability options, ±20 ppm, ±25 ppm,
±50 ppm
Two operating temperatures, -20 to 70°C or
-40 to 85°C
Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V
and 2.25 to 3.65V continuous
Output drive strength
the operation of the device in OE, S̅ T̅ ̅ , or NCmode.
Table 12. OE vs. S vs. NC
̅ T̅ ̅
OE
S
̅
T
̅
̅
NC
4.1 mA
N/A
4.1 mA
4 mA
N/A
4.1 mA
N/A
Active current 20 MHz (max, 1.8V)
OE disable current (max. 1.8V)
Standby current (typical 1.8V)
0.6 µA
N/A
N/A
138 ns
N/A
OE enable time at 77.76 MHz (max)
Resume time from standby
(max, all frequency)
N/A
5 ms
N/A
N/A
OE, S̅ T̅ ̅ or NC mode
Output driver in OE disable/standby
mode
weak
pull-down
For more information regarding SiTime’s field programmable
solutions, see Time Machine II and Field Programmable
Oscillators.
High Z
Output on Startup and Resume
SiT1602 is typically factory-programmed per customer
ordering codes for volume delivery.
The SiT1602 comes with gated output. Its clock output is
accurate to the rated frequency stability within the first pulse
from initial device startup or resume from the standby mode.
In addition, the SiT1602 features “no runt” pulses and “no
glitch” output during startup or resume as shown in the
waveform captures in Figure 17 and Figure 18.
Figure 18. Startup Waveform vs. Vdd
Rev 1.04
Page 9 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[10]
Recommended Land Pattern (Unit: mm)[11]
2.0 x 1.6 x 0.75 mm
2.5 x 2.0 x 0.75 mm
1.9
2.5 ± 0.05
1.00
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
0.75
0.75 ± 0.05
1.1
3.2 x 2.5 x 0.75 mm
2.2
3.2 ± 0.05
2.1
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
0.9
1.4
0.75 ± 0.05
5.0 x 3.2 x 0.75 mm
2.54
5.0 ± 0.05
2.39
#4
#3
#3
#4
YXXXX
#1
#2
#2
#1
1.15
1.5
0.75 ± 0.05
Rev 1.04
Page 10 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[10]
Recommended Land Pattern (Unit: mm)[11]
7.0 x 5.0 x 0.90 mm
5.08
5.08
7.0 ± 0.05
YXXXX
1.4
2.2
0.90 ± 0.10
Notes:
10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of
the device.
11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 11 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime
Part Number Generator.
SiT1602BC-12-18E-66.666660D
Packaging
“D”: 8 mm Tape & Reel, 3ku reel
Part Family
“T”: 12/16 mm Tape & Reel, 3ku reel
“Y”: 12/16 mm Tape & Reel, 1ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Blank for Bulk
“SiT1602”
Revision Letter
“B” is the revision
Frequency
Refer to frequency list below
Temperature Range
“C” Commercial, -20 to 70ºC
“I” Industrial, -40 to 85ºC
Feature Pin
“E” for OutputEnable
“S” forStandby
“N” for No Connect
Output Drive Strength
“–” Default (datasheet limits)
See Tables 7 to 11 for
rise/fall times
Supply Voltage
“18” for 1.8V ±10%
“L”
“A”
“R”
“B”
“T”
“E”
“U”
“F”
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“30” for 3.0V ±10%
“33” for 3.3V ±10%
“XX” for 2.5V -10% to 3.3V +10%
Package Size
Frequency Stability
“7” 2.0 x 1.6 mm
“1” 2.5 x 2.0 mm
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
“1” for ±20 ppm
“2” for ±25 ppm
“3” for ±50 ppm
Table 13. List of Supported Frequencies
3.57 MHz
4 MHz
4.096 MHz
20 MHz
6 MHz
7.3728 MHz
24.576 MHz
33 MHz
8.192 MHz
25 MHz
10 MHz
12 MHz
14 MHz
18.432 MHz
28.6363 MHz
33.33333 MHz
54 MHz
19.2 MHz
30 MHz
35.84 MHz
60 MHz
72 MHz
24 MHz
32.768 MHz
38 MHz
65 MHz
25.000625 MHz 26 MHz
27 MHz
31.25 MHz
37.5 MHz
62.5 MHz
33.3 MHz
40 MHz
33.33 MHz
40.5 MHz
33.333 MHz
33.3333 MHz
50 MHz
38.4 MHz
66 MHz
48 MHz
66.6 MHz
75 MHz
66.66 MHz
77.76 MHz
66.666 MHz
66.6666 MHz
66.66666 MHz
74.175824 MHz 74.176 MHz
74.25 MHz
Table 14. Ordering Codes for Supported Tape & Reel Packing Method
Device Size
16 mm T&R (3ku)
16 mm T&R (1ku)
12 mm T&R (3ku)
12 mm T&R (1ku)
8 mm T&R (3ku)
8 mm T&R (1ku)
(mm x mm)
2.0 x 1.6
2.5 x 2.0
3.2 x 2.5
5.0 x 3.2
7.0 x 5.0
–
–
–
–
T
–
–
–
–
Y
–
–
–
T
–
–
–
–
Y
–
D
D
D
–
E
E
E
–
–
–
Rev 1.04
Page 12 of 17
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SiT1602B Low Power, Standard Frequency Oscillator
Table 15. Additional Information
Document
Description
Download Link
Time Machine II
MEMS oscillator programmer
http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators
Devices that can be programmable in the field by
Time Machine II
http://www.sitime.com/products/field-programmable-oscillators
Tape & Reel dimension, reflow profile and other
manufacturing related info
Manufacturing Notes
Qualification Reports
Performance Reports
http://www.sitime.com/manufacturing-notes
RoHS report, reliability reports, compositionreports
http://www.sitime.com/support/quality-and-reliability
http://www.sitime.com/support/performance-measurement-report
Additional performance data such as phase noise,
current consumption and jitter for selected frequencies
Termination Techniques
Layout Techniques
Terminationdesign recommendations
Layout recommendations
http://www.sitime.com/support/application-notes
http://www.sitime.com/support/application-notes
Table 16. Revision History
Revision
Release Date
Change Summary
0.9
04/01/2014
Preliminary
Removed preliminary
Updated max spec for current consumption and OE disable current
Updated the maximum operating junction temperature
Updated the current consumption and OE disable current in Table 12
Updated performance plots 8 and 10
1.0
05/14/2014
Revised the formula for calculating the max frequency with different rise/fall time options
Added 20 MHz to the frequency selection
1.01
05/07/2015
Revised the Electrical Characteristics, Timing Diagrams and Performance Plots
Revised 2016 PKG diagram
Added 16 mm T&R information to Table 14
Revised 12 mm T&R information to Table 14
1.02
1.03
1.04
06/18/2015
08/30/2016
01/30/2018
Revised part number example in the ordering information
Updated logo and company address, other page layout changes
Revised 2520 package land pattern
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2014-2018. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or
(iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does
not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale
of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev 1.04
Page 13 of 17
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Silicon MEMS Outperforms Quartz
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
Rev 1.04
Page 14 of 17
www.sitime.com
Silicon MEMS Outperforms Quartz
Best Reliability
Best Electro Magnetic Susceptibility (EMS)
Silicon is inherently more reliable than quartz. Unlike
quartz suppliers, SiTime has in-house MEMS and analog
CMOS expertise, which allows SiTime to develop the
most reliable products. Figure 1 shows a comparison
with quartz technology.
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than
quartz oscillators as shown in Figure 3.
Why is SiTime Best in Class:
Internal differential architecture for best common
Why is SiTime MEMS Best in Class:
mode noise rejection
SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
Electrostatically driven MEMS resonator is more
immune to EMS
World-class MEMS and CMOS design expertise
Reliability (Million Hours)
SiTime
1,140
38
IDT
KYCA
EPSN
TXC
CW
SLAB
SiTime
28
EPSN
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
Figure 1. Reliability Comparison[1]
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is shown in Figure 4.
Best Aging
Why is SiTime Best in Class:
Unlike quartz, MEMS oscillators have excellent long
term aging performance which is why every new SiTime
product specifies 10-year aging. A comparison is shown
in Figure 2.
On-chip regulators and internal differential architecture
for common mode noise rejection
MEMS resonator is paired with advanced analog
CMOS IC
Why is SiTime Best in Class:
SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
SiTime
EPSN
KYCA
Inherently better immunity of electrostatically driven
MEMS resonator
MEMS vs. Quartz Aging
SiTime Oscillator
Quartz Oscillator
10
8
8
6
Figure 4. Power Supply Noise Rejection[4]
4
3.5
3
2
1.5
0
1-Year
10-Year
Figure 2. Aging Comparison[2]
Rev 1.04
Page 15 of 17
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Silicon MEMS Outperforms Quartz
Best Vibration Robustness
Best Shock Robustness
High-vibration environments are all around us. All
electronics, from handheld devices to enterprise servers
and storage systems are subject to vibration. Figure 5
shows a comparison of vibration robustness.
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
Why is SiTime Best in Class:
The moving mass of SiTime’s MEMS resonators is
The moving mass of SiTime’s MEMS resonators is
up to 3000 times smaller than quartz
up to 3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust
Center-anchored MEMS resonator is the most robust
design
design
K
KYCA
TX
C
E
E
PS
C
C
S
L
AB
SiTime
100.0
10.0
1.0
0.1
0.0
10
100
1000
KYCA
EPSN
TXC
CW
SLAB
SiTime
Vibration Frequency (Hz)
Figure 5. Vibration Robustness[5]
Figure 6. Shock Robustness[6]
Figure labels:
.
.
.
.
.
.
TXC = TXC
Epson = EPSN
Connor Winfield = CW
Kyocera = KYCA
SiLabs = SLAB
SiTime = EpiSeal MEMS
Rev 1.04
Page 16 of 17
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Silicon MEMS Outperforms Quartz
Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
.
.
.
.
.
.
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
Field strength: 3V/m
Radiated signal modulation: AM 1 kHz at 80% depth
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
Antenna polarization: Vertical
DUT position: Center aligned to antenna
Devices used in this test:
Label
Manufacturer
SiTime
Part Number
Technology
EpiSeal MEMS
EPSN
TXC
SiT9120AC-1D2-33E156.250000
EG-2102CA156.2500M-PHPAL3
BB-156.250MBE-T
MEMS + PLL
Epson
Quartz, SAW
TXC
Quartz, 3rd Overtone
Quartz, 3rd Overtone
Quartz, SAW
CW
Conner Winfield
AVX Kyocera
SiLab
P123-156.25M
KYCA
KC7050T156.250P30E00
590AB-BDG
SLAB
Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
Label
Manufacturer
SiTime
Part Number
Technology
MEMS + PLL
Quartz
EpiSeal MEMS
SiT8208AI-33-33E-25.000000
NZ2523SB-25.6M
NDK
NDK
KYCA
AVX Kyocera
Epson
KC2016B25M0C1GE00
SG-310SCF-25M0-MB3
Quartz
EPSN
Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
.
.
.
MIL-STD-883F Method 2002
Condition A: half sine wave shock pulse, 500-g, 1ms
Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.
Rev 1.04
Page 17 of 17
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