SDM-09060-B1F_1 [SIRENZA]
925-960 MHz Class AB 65W Power Amplifier Module; 925-960 MHz的AB类65W功率放大器模块
| 型号： | SDM-09060-B1F_1 |
| 厂家： | 
SIRENZA MICRODEVICES |
| 描述： | 925-960 MHz Class AB 65W Power Amplifier Module |
| 文件： | 总5页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDM-09060-B1F
SDM-09060-B1FY
925-960 MHz Class AB
65W Power Amplifier Module
Product Description
RoHS Compliant
& Green Package
Pb
Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
Functional Block Diagram
+3V DC to +6 V DC
+28V DC
Vgs1
Gnd
Vds1
Gnd
180o
0o
Product Features
• Available in RoHS compliant packaging
• 50 W RF impedance
Balun
Balun
RF
RF
out
in
• 65W Output P1dB
• Single Supply Operation : Nominally 28V
• High Gain: 17 dB at 942 MHz
Gnd
Gnd
0o
180o
• High Efficiency : 44% at 942 MHz
• ESD Protection: JEDEC Class 2 (2000V HBM)
Vds2
+3V DC to +6 V DC
+28V DC
Vgs2
Applications
• Base Station PA driver
• Repeater
Case Flange = Ground
• CDMA
• GSM / EDGE
Key Specifications
Symbol
Frequency
P1dB
Parameter
Units
MHz
W
Min.
925
60
16
-
Typ.
Max.
Frequency of Operation
-
960
Output Power at 1dB Compression, 943 MHz
Gain at 60W PEP, 942MHz and 943MHz
65
-
Gain
dB
17
-
0.5
-
Gain Flatness
Efficiency
Efficiency
IRL
Peak-to-Peak Gain Variation, 60W PEP, 925 - 960MHz
Drain Efficiency at 60W PEP, 942MHz and 943MHz
Drain Efficiency at 60W CW, 942MHz
dB
0.3
34
%
32
%
44
-
Input Return Loss 60W PEP Output Power, 925 - 960MHz
3rd Order IMD Product, 60W PEP, 942MHz and 943MHz
Signal Delay from Pin 3 to Pin 8
dB
-
-
-
-
-15
-31
4.0
0.5
1.5
-10
-27
-
IMD
dBc
nS
Delay
Phase Linearity
RTH
Deviation from Linear Phase (Peak-to-Peak)
Thermal Resistance (Junction to Case)
Deg
ºC/W
-
T
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =300mA TFlange = 25ºC
Quality Specifications
Parameter
ESD Rating
MTTF
Description
Unit
Typical
2000
1.2 X 106
Volts
Human Body Model
200oC Channel
Hours
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-104211Rev E
SDM-09060-B1F 925-960 MHz 65W Power Amp Module
Pin Description
Pin #
Function
Description
1
VGS1
LDMOS FET Q1 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
2,4,7,9
Ground
Module Topside ground.
Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
3
RF Input
5
6
VGS2
VD2
LDMOS FET Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
LDMOS FET Q2 drain bias. See Note 1.
Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be
taken to protect against video transients that may damage the active devices.
8
RF Output
VD1
10
LDMOS FET Q1 drain bias. See Note 1.
Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures
optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for
Power Modules.
Flange
Ground
Simplified Device Schematic
Note 1:
1
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the VD leads to
accommodate modulated signals.
10
9
2
Q1
Note 2:
3
8
Gate voltage must be applied to VGS leads simultaneously with
or after application of drain voltage to prevent potentially
destructive oscillations. Bias voltages should never be applied
to a module unless it is properly terminated on both input and
output.
Q2
4
7
6
Note 3:
5
The required VGS corresponding to a specific IDQ will vary from
module to module and may differ between VGS1 and VGS2 on
the same module by as much as ±0.10 volts due to the normal
die-to-die variation in threshold voltage for LDMOS transistors.
Case Flange = Ground
Absolute Maximum Ratings
Parameters
Value
35
Unit
V
Note 4:
Drain Voltage (VDD
RF Input Power
)
The threshold voltage (VGSTH) of LDMOS transistors varies with
device temperature. External temperature compensation may
be required. See Sirenza application notes AN-067 LDMOS
Bias Temperature Compensation.
+37
dBm
Load Impedance for Continuous Operation Without
Damage
5:1
VSWR
Control (Gate) Voltage, VDD = 0 VDC
Output Device Channel Temperature
15
V
Note 5:
+200
ºC
This module was designed to have it's leads hand
soldered to an adjacent PCB. The maximum soldering iron tip
temperature should not exceed 700° F, and the soldering iron
tip should not be in direct contact with the lead for longer than
10 seconds. Refer to app note AN054 (www.sirenza.com) for
further installation instructions.
-20 to
+90
Operating Temperature Range
Storage Temperature Range
ºC
ºC
-40 to
+100
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-104211 Rev E
SDM-09060-B1F 925-960 MHz 65W Power Amp Module
Typical Performance Curves
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=0.6A, Pout=60W PEP, Delta F=1 MHz
70
Vdd=28V, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz
45
40
35
30
25
20
15
10
5
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
0
Gain
IM3
Efficiency
IM5
IM7
IRL
60
50
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
Gain
IM3
Efficiency
IM5
IM7
0
900
920
940
Frequency (MHz)
960
980
0
20
40
60
80
100
Pout (W PEP)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=0.6A,
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=0.6A, Freq=942 MHz
Pout=60W
20
19
18
17
16
15
14
13
12
11
10
9
60
50
40
30
20
10
0
0
55
50
45
40
35
30
25
20
15
10
5
-5
Gain
-10
-15
-20
-25
Efficiency
IRL
Gain
Efficiency
8
0
0
20
40
60
80
100
900
920
940
960
980
Pout (W)
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-104211 Rev E
SDM-09060-B1F 925-960 MHz 65W Power Amp Module
Typical Performance Curves (cont’d)
Two Tone Gain, Efficiency, IRL, IMD vs Supply Voltage
Pout=60W PEP, Idq=0.6A, Freq=942 MHz, Delta F=1 MHz
CW Gain, Efficiency, IRL vs Supply Voltage
Pout=60W, Idq=0.6A, Freq=942 MHz
60
50
40
30
20
10
0
0
60
0
Gain
IRL
IM5
Efficiency
IM3
IM7
-10
-20
-30
-40
-50
-60
50
-5
Gain
Efficiency
40
-10
-15
-20
-25
-30
IRL
30
20
10
0
18
20
22
24
26
28
30
32
18
20
22
24
26
28
30
32
Vds (Volts)
Vds (Volts)
CW Gain vs Pout for various Idq
Vds=28V, Freq=942 MHz
IM3 vs Pout for various Idq
Vds=28V, Freq=942 MHz, Delta F=1 MHz
20
19.5
19
-25
-30
-35
-40
-45
-50
-55
-60
Idq=0.4A
Idq=0.8A
Idq=0.5A
Idq=0.6A
Idq=0.7A
Idq=0.6A
Idq=0.5A
Idq=0.4A
Idq=0.8A
Idq= 0.7A
18.5
18
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
Pout (W PEP)
Pout (W)
Note:
Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-104211 Rev E
SDM-09060-B1F 925-960 MHz 65W Power Amp Module
Package Outline Drawing
Note:
Refer to Application note AN054, “Detailed Installation Instructions for Power Modules” for detailed mounting information.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-104211 Rev E
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