SDM-08120 [SIRENZA]
869-894 MHz Class AB 130W Power Amplifier Module; 869-894 MHz的AB类130W功率放大器模块
| 型号： | SDM-08120 |
| 厂家： | 
SIRENZA MICRODEVICES |
| 描述： | 869-894 MHz Class AB 130W Power Amplifier Module |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDM-08120
SDM-08120Y
869-894 MHz Class AB
RoHS Compliant
& Green Package
Product Description
Pb
Sirenza Microdevices’ SDM-08120 130W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
130W Power Amplifier Module
Functional Block Diagram
+3V DC to +6 V DC
+28V DC
Vgs1
Vds1
Gnd
180o
0o
Gnd
Product Features
• Available in RoHS compliant packaging
Balun
Balun
RF
RF
out
• 50 W RF impedance
in
• 130W Output P1dB
Gnd
Gnd
• Single Supply Operation : Nominally 28V
• High Gain: 16 dB at 880 MHz
• High Efficiency: 42% at 880 MHz
0o
180o
Vds2
+3V DC to +6 V DC
+28V DC
Vgs2
Applications
• Base Station PA driver
Case Flange = Ground
• Repeater
• CDMA / GSM / EDGE
Key Specifications
Symbol
Frequency
P1dB
Parameter
Units
MHz
W
Min.
869
120
14
Typ.
-
Max.
894
-
Frequency of Operation
Output Power at 1dB Compression, 881 MHz
130
16
Gain
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz
Peak-to-Peak Gain Variation, 869 - 894MHz, 12 Watt
Drain Efficiency at 120 Watts Output Power, CW 880 MHz
Drain Efficiency at 24 Watts Output Power, 869 - 894MHz
Input Return Loss 24W CW Output Power, 869 - 894MHz
IS-95, 9 Ch Fwd, Offset=750KHz, 881MHz, Pout=12W avg
IS-95, 9 Ch Fwd, Offset=1.98MHz, 881MHz, Pout=12W avg
IS-95, 9 Ch Fwd, Offset=750kHz, 881MHz, Pout=24W avg
3rd Order IMD Product,120W PEP, 880MHz and 881MHz
Signal Delay from Pin 3 to Pin 8
dB
-
Gain Flatness
Efficiency
Efficiency
IRL
dB
-
0.5
42
1.0
%
%
20
dB
-
-
-15
-55
-63
-46
-34
4.0
0.7
0.7
-12
-50
-60
-
dBc
dBc
dBc
dBc
nS
CDMA ACPR
Integrated Bandwidth
-
-
-
-
IMD
Delay
-30
-
Phase Linearity
RTH
Deviation from Linear Phase (Peak-to-Peak)
Deg
ºC/W
-
Thermal Resistance (Junction-to-Case)
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = IDQ2 =600mA TFlange = 25ºC
Quality Specifications
Parameter
ESD Rating
MTTF
Description
Unit
Volts
Hours
Typical
2000
1.2 X 106
Human Body Model
200oC Channel
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103346 Rev F
SDM-08120 869-894 MHz 130W Power Amp Module
Pin Description
Pin #
Function
Description
1
VGS1
LDMOS FET Q1 and Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
2,4,7,9
Ground
RF Input
VGS2
Module Topside ground.
3
5
Internally DC blocked
LDMOS FET Q3 and Q4 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4
LDMOS FET Q3 and Q4 drain bias. See Note 1.
6
VD2
8
RF Output Internally DC blocked
10
VD1
LDMOS FET Q1 and Q2 drain bias. See Note 1.
Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures
optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for
Power Modules.
Flange
Ground
Simplified Device Schematic
Q1
+28V DC
Note 1:
+3V DC to +6 V DC
10
9
1
Internal RF decoupling is included on all bias leads. No addi-
tional bypass elements are required, however some applica-
tions may require energy storage on the VD leads to
accommodate modulated signals.
Q2
180o
2
3
0o
Note 2:
Balun
Balun
8
Gate voltage must be applied to VGS leads
simultaneously with or after application of drain voltage to pre-
vent potentially destructive oscillations. Bias
voltages should never be applied to a module unless it is prop-
erly terminated on both input and output.
Q3
Q4
180o
0o
7
6
4
5
+28V DC
+3V DC to +6
V DC
Note 3:
The required VGS corresponding to a specific IDQ will vary from
module to module and may differ between VGS1 and VGS2 on
the same module by as much as ±0.10 volts due to the normal
die-to-die variation in threshold voltage.
LDMOS transistors.
Absolute Maximum Ratings
Parameters
Value
Unit
V
Drain Voltage (VDD
RF Input Power
)
35
Note 4:
The threshold voltage (VGSTH) of LDMOS transistors varies with
device temperature. External temperature compensation may
be required. See Sirenza application notes AN-067 LDMOS
Bias Temperature
+43
dBm
Load Impedance for Continuous Operation
Without Damage
5:1
VSWR
Control (Gate) Voltage, VDD = 0 VDC
Output Device Channel Temperature
15
V
Compensation.
+200
ºC
Note 5:
-20 to
+90
Operating Temperature Range
Storage Temperature Range
ºC
ºC
This module was designed to have it's leads hand
soldered to an adjacent PCB. The maximum soldering iron tip
temperature should not exceed 700° F, and the soldering iron
tip should not be in direct contact with the lead for longer than
10 seconds. Refer to app note AN054 (www.sirenza.com) for
further installation
-40 to
+100
Operation of this device beyond any one of these limits may cause per-
manent damage. For reliable continuous operation see typical setup val-
ues specified in the table on page one.
instructions.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-103346 Rev F
SDM-08120 869-894 MHz 130W Power Amp Module
Typical Performance Curves
2 Tone Gain, Efficiency, Linearity and IRL vs Frequency
Vdd=28V, Idq=1.2A, Pout=120W PEP, Delta F=1 MHz
2 Tone Gain, Efficiency, Linearity vs Pout
Vdd=28V, Idq=1.2A, Freq=881 MHz, Delta F=1 MHz
45
40
35
30
25
20
15
10
5
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
60
50
40
30
20
10
0
0
Gain
IM3
IM7
Efficiency
IM5
IRL
-10
-20
-30
-40
-50
-60
Gain
IM3
IM7
Efficiency
IM5
0
850
860
870
880
890
900
910
0
25
50
75
100
125
150
175
Pout (W PEP)
Frequency (MHz)
CW Gain, Efficiency vs Pout
Vdd=28V, Idq=1.2A, Freq=881 MHz
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=1.2A,
Pout=120W
20
60
55
50
45
40
35
30
25
20
15
10
5
19
18
17
16
15
14
13
12
11
10
9
50
40
30
20
10
0
0
-5
Gain
Efficiency
IRL
-10
-15
-20
-25
Gain
Efficiency
8
0
850
860
870
880
890
900
910
0
25
50
75
100
125
150
175
Pout (W)
Frequency (MHz)
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-103346 Rev F
SDM-08120 869-894 MHz 130W Power Amp Module
Typical Performance Curves (cont’d)
Two Tone Gain, Efficiency, IRL, IMD vs Supply Voltage
Pout=120W PEP, Idq=1.2A, Freq=881 MHz, Delta F=1 MHz
CW Gain, Efficiency, IRL vs Supply Voltage
Pout=120W, Idq=1.2A, Freq=881 MHz
60
0
60
50
40
30
20
10
0
0
Gain
IRL
IM5
Efficiency
IM3
IM7
50
-5
-10
-20
-30
-40
-50
-60
Gain
Efficiency
40
-10
-15
-20
-25
-30
IRL
30
20
10
0
18
20
22
24
26
28
30
32
18
20
22
24
26
28
30
32
Vds (Volts)
Vds (Volts)
IM3 vs Pout for various Idq
Vds=28V, Freq=881 MHz, Delta F=1 MHz
CW Gain vs Pout for various Idq
Vds=28V, Freq=881 MHz
-25
-30
-35
-40
-45
-50
-55
19
18.5
18
Idq=1.6A
Idq=1.4A
Idq=1.2A
Idq=0.8A
Idq=1.0A
17.5
17
Idq=1.2A
Idq=1.6A
Idq=1.0A
Idq=0.8A
16.5
16
Idq= 1.4A
15.5
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Pout (W PEP)
Pout (W)
Note:
Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-103346 Rev F
SDM-08120 869-894 MHz 130W Power Amp Module
Package Outline Drawing
2.00
[50.8]
.140
.125
3.56
3.18
.140
.125
3.56
3.18
[
]
1.297
[32.94]
[
]
(5X)
(5X)
5
LABEL
LOCATION
.055
[1.40]
(2X)
1
.100
[2.54]
10
9
(6X)
.044
[1.12]
(2X)
2.00
2
[50.8]
1.274
[32.36]
1.800
[45.72]
1.080
[27.43]
3
4
8
.810
[20.57]
.907
[23.04]
1.52
1.49
38.61
37.85
.540
[13.72]
.637
[16.18]
[
]
7
.270
[6.86]
.367
[9.32]
6
5
.21
[5.3]
.125
[3.18]
(2X)
.11
[2.9]
.703
LEAD
IDENTIFICATION
[17.86]
Lead No.
Function
VGS1
.005
[.13]
1
.36
[9.1]
2
Ground
MAX
3
Input
4
Ground
VGS2
.062
[1.57]
5
.089
.076
2.26
1.93
[
2
]
6
VD2
1. INTERPRET DRAWING PER ANSI Y14.5.
7
Ground
Output
Ground
VD1
2. MEASURE FROM THE BOTTOM OF THE LEADS.
3. DIMENSIONS ARE INCHES[MM].
8
9
4. LEAD IDENTIFICATION IS FOR REFERENCE ONLY.
5. ORIENTATION OF LABEL IS TO BE AS SHOWN.
10
BASE PLATE
Ground
MODULE WEIGHT = 41gm NOMINAL
Note:
Refer to Application note AN054, “Detailed Installation Instructions for Power Modules” for detailed mounting information.
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-103346 Rev F
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