STYN1275 [SIRECTIFIER]
Thyristor Discretes (SCRs);
| 型号： | STYN1275 |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | Thyristor Discretes (SCRs) |
| 文件： | 总3页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STYN875 thru STYN1875
Thyristor Discretes (SCRs)
Dimensions TO-247AD
A
G
K
K=Cathode, A=Anode, G=Cate
VRRM
V
VRSM
V
STYN875
STYN1075
STYN1275
STYN1675
STYN1875
800
1000
1200
1600
1800
900
1100
1300
1700
1900
Symbol
Test Conditions
Maximum Ratings
Unit
I
I
TRMS
TVJ=TVJM
75
48
A
TAVM
TC=85oC; 180o sine
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
540
580
480
500
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
ITSM
A
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
1350
1300
1050
1030
i2t
A2s
150
TVJ=TVJM
repetitive, IT=75A
f=50Hz, tp=200us
(di/dt)cr VD=2/3VDRM
IG=0.3A
A/us
500
non repetitive, IT=ITAVM
VDR=2/3VDRM
diG/dt=0.3A/us
TVJ=TVJM;
RGK= ; method 1 (linear voltage rise)
(dv/dt)cr
1000
V/us
W
TVJ=TVJM
PGM
tp=30us
tp=300us
10
5
IT=ITAVM
0.5
10
W
V
PGAV
VRGM
-40...+140
140
-40...+125
TVJ
TVJM
Tstg
oC
Md
Fc
Mounting torque (M3)
Mounting force with clip
0.8...1.2
20...120
Nm
N
typical
Weight
6
g
P1
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©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
STYN875 thru STYN1875
Thyristor Discretes (SCRs)
Characteristic Values
Symbol
Test Conditions
Unit
TVJ=TVJM; VR=VRRM; VD=VDRM
IT=75A; TVJ=25oC
For power-loss calculations only (TVJ=125oC)
5
mA
V
IR, ID
VT
1.60
0.80
11
V
VTO
rT
m
VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
1.5
1.6
V
VGT
IGT
VD=6V;
100
200
mA
TVJ=TVJM;
VD=2/3VDRM
0.2
10
V
VGD
IGD
mA
TVJ=25oC; tp=10us;
IG=0.3A; diG/dt=0.3A/us
TVJ=25oC; VD=6V; RGK=
IL
IH
mA
mA
us
150
100
2
TVJ=25oC; VD=1/2VDRM
IG=0.3A; diG/dt=0.3A/us
tgd
0.60
K/W
RthJC
DC current
typ.
0.80
50
K/W
m/s2
RthJH
DC current
Max. acceleration, 50 Hz
a
100
80
450
400
350
300
250
200
10000
VR = 0 V
50 Hz, 80% VRRM
TVJ = 45°C
60
I2t
IT
TVJ = 45°C
1000
ITSM
[A]
40
[A2s]
[A]
TVJ = 125°C
125°C
150°C
20
TVJ = 125°C
TVJ = 25°C
0
100
0,5
1,0
1,5
2,0
0,01
0,1
1
1
2
3
4 5 6 7 8 910
VT [V]
t [s]
t [ms]
Fig. 3 I2t versus time (1-10 ms)
Fig. 2 Surge overload current
Fig. 1 Forward characteristics
P2
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
STYN875 thru STYN1875
Thyristor Discretes (SCRs)
80
60
10
1000
1: I
, T = 150°C
GD VJ
dc =
1
2: I , T
GT VJ
3: I , T
GT VJ
=
=
25°C
-40°C
0.5
0.4
6
0.33
0.17
0.08
100
5
3
I
typ.
Limit
2
T(AV)M
tgd
[µs]
VG
40
20
0
1
1
[A]
[V]
4
10
1
T
= 125°C
VJ
4: P
5: P
6: P
= 0.5 W
GAV
=
5 W
GM
=
10 W
GM
0,1
0
25 50 75 100 125 150
1
10
100
IG [mA]
1000 10000
10
100
1000
T
[°C]
IG [mA]
C
Fig. 5 Gate controlled delay time
Fig. 4 Gate trigger characteristics
Fig. 6 Max. forward current
at case temperature
dc =
1
0.5
0.4
0.33
0.17
0.08
80
60
0,4
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
0,3
P(AV)
ZthJC
0,2
[K/W]
40
[W]
Rthi [K/W] ti [s]
0.044
0.039
0.047
0.09
0.011
0.0001
0.02
20
0
0,1
0.4
0.18
0.12
0,0
100
0
20
40
0
50
100
150
101
102
103
104
IT(AV) [A]
Tamb [°C]
t [ms]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
Fig. 8 Transient thermal impedance junction to case
P3
www.sirectifier.com
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com
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