SG12N06P [SIRECTIFIER]
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。; 绝缘栅双极型晶体管（ IGBT ），绝缘栅双极型晶体管（ IGBT的） ， IGBT分立器件分立式IGBT 。
| 型号： | SG12N06P |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。 |
| 文件： | 总2页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SG12N06P, SG12N06DP
Discrete IGBTs
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
E
C
G
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
G=Gate, C=Collector, E=Emitter
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
SG12N06DP
Test Conditions
SG12N06P
Symbol
Maximum Ratings
Unit
VCES
VCGR
TJ=25oC to 150oC
600
600
V
TJ=25oC to 150oC; RGE=1 M ;
VGES
VGEM
Continuous
Transient
±20
±30
V
A
IC25
IC90
ICM
TC=25oC
24
12
48
TC=90oC
TC=25oC, 1 ms
VGE=15V; TVJ=125oC; RG=33
ICM=24
@ 0.8 VCES
SSOA
(RBSOA)
A
Clamped inductive load, L=300uH
PC
TC=25oC
100
W
-55...+150
150
-55...+150
TJ
TJM
Tstg
oC
oC
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
300
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Nm/Ib.in.
g
Weight
4
(T
Characteristic Values
min. typ. max.
J
=25o
C, unless otherwise specified)
Symbol
Test Conditions
Unit
BVCES
I
I
C
=250uA; VGE=0V
=250uA; VCE=VGE
600
2.5
V
V
V
GE(th)
C
5.0
200
1.5
I
CES
V
V
V
CE=0.8VCES
GE=0V;
;
TJ
J
=25o
=125o
C
uA
mA
nA
V
T
C
I
GES
CE=0V; VGE=±20V
=IC90; VGE=15V
±100
2.1
V
CE(sat)
I
C
SG12N06P, SG12N06DP
Discrete IGBTs
(T
J
=25o
C, unless otherwise specified)
Characteristic Values
Symbol
Test Conditions
Unit
min.
typ.
max.
gts
I
C=IC90; VCE=10V
5
11
S
Pulse test, t 300us, duty cycle 2%
C
ies
860
100
15
C
oes
V
CE=25V; VGE=0V; f=1MHz
pF
nC
C
res
Q
g
ge
gc
32
Q
Q
I
C=IC90; VGE=15V; VCE=0.5VCES
10
10
t
d(on)
ri
d(off)
fi
off
d(on)
ri
Inductive load, T
=IC90; VGE=15V; L=300uH
CE=0.8VCES; R =Roff=18
J
=25o
C
20
ns
ns
t
I
C
20
V
G
t
150
120
0.5
20
250
270
0.8
ns
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher T or
increased R
t
ns
J
E
G
mJ
ns
t
Inductive load, T
=IC90; VGE=15V; L=300uH
CE=0.8VCES; R =Roff=18
J
=25o
C
t
I
C
20
ns
E
on
V
G
0.15
200
200
0.8
mJ
ns
t
d(off)
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher T or
t
fi
J
ns
E
off
increased R
IGBT
G
mJ
K/W
K/W
R
thJC
1.25
R
thCK
0.25
(T
J
=25o
C, unless otherwise specified)
Reverse Diode (FRED)
Symbol
Characteristic Values
Test Conditions
Unit
min.
typ.
max.
V
F
I
F
=15A; TVJ=150o
VJ=25o
C
1.3
V
T
C
2.5
2.5
I
RM
V
L
R
=100V; IF=25A; -di
F
/dt=100A/us
2
A
0.05uH; TVJ=100o
C
t
rr
I
F
=1A; -di/dt=50A/us; V
R
=30V; T
J
=25o
C
35
ns
R
thJC
Diode
1.6
K/W
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