SBL1045CT [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 肖特基势垒二极管肖特基势垒二极管，低压降肖特基势垒二极管低VF肖特基势垒二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | SBL1045CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBL1030CT thru SBL1045CT
Low VF Schottky Barrier Rectifiers
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
SBL1030CT
SBL1035CT
SBL1040CT
SBL1045CT
30
21
30
35
40
45
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
35
24.5
28
40
45
31.5
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
IFSM
VF
Maximum Average Forward Rectified Current @TC=95oC
10
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
125
A
V
Maximum Forward Voltage At 5.0A DC (Note 1)
0.55
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.5
50
IR
mA
@TJ=100oC
CJ
ROJC
TJ
Typical Junction Capacitance Per Element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
250
pF
oC/W
oC
3.0
-55 to +125
-55 to +150
TSTG
Storage Temperature Range
oC
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
SBL1030CT thru SBL1045CT
Low VF Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
12
10
125
100
75
8
6
4
2
0
50
RESISTIVE OR INDUCTIVE LOAD
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
100
100
10
10
J
T = 100 C
J
T = 75 C
1.0
1.0
0.1
J
T = 25 C
0.1
J
T = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.01
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (VOLTS)
20
40
60
80
100
120
0
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
J
T = 25 C, f= 1MHz
10
0.1
1
REVERSE VOLTAGE , VOLTS
100
4
10
相关型号：
SBL1050
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。
SIRECTIFIER
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