MBR2090CT [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。; 肖特基势垒二极管肖特基势垒二极管，高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管， TJ = -65 ° C〜 175 ° C， TJM = 175 ℃。
| 型号： | MBR2090CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。 |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2070CT thru MBR20100CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
MBR2070CT
MBR2080CT
MBR2090CT
70
49
56
63
70
70
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
80
80
90
90
MBR20100CT 100
100
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=120oC
20
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
150
dv/dt
Voltage Rate Of Change (Rated VR)
IF=10A @TJ=25oC
Maximum Forward
Voltage (Note 1)
10000
V/us
0.75
0.85
0.85
0.95
IF=10A @TJ=125oC
IF=20A @TJ=25oC
IF=20A @TJ=125oC
VF
V
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
0.1
100
IR
mA
@TJ=125oC
2.0
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
250
-55 to +150
-55 to +175
TJ
TSTG
Storage Temperature Range
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR2070CT thru MBR20100CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
20
15
150
125
100
75
10
5
50
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
RESISTIVE OR INDUCTIVE LOAD
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
10
100
TJ = 100 C
TJ = 75 C
10
1.0
0.1
1.0
0.1
0.01
TJ = 25 C
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
20
40
60
80
100
120
0
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
100
TJ = 25 C, f= 1MHz
10
0.1
1
100
4
10
REVERSE VOLTAGE , VOLTS
相关型号：
MBR2090CT-011
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, TO-220AB, 3 PIN
VISHAY
MBR2090CT-1
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN
SENSITRON
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