MBR1560CT [SIRECTIFIER]
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。; 肖特基势垒二极管肖特基势垒二极管，高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管， TJ = -65 ° C〜 175 ° C， TJM = 175 ℃。
| 型号： | MBR1560CT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。 |
| 文件： | 总2页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1550CT thru MBR1560CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Dimensions TO-220AB
Dim.
Inches
Min. Max.
Milimeter
Min. Max.
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
12.70 13.97
14.73 16.00
9.91 10.66
C
C(TAB)
A
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.35
2.29
4.08
6.85
3.18
1.65
5.84
1.01
BSC
4.82
1.39
0.56
2.79
A=Anode, C=Cathode, TAB=Cathode
VRRM
V
VRMS
V
VDC
V
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
MBR1550CT
MBR1560CT
50
35
50
60
60
42
Symbol
Characteristics
Maximum Ratings
Unit
I(AV)
Maximum Average Forward Rectified Current @TC=125oC
15
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
IFSM
150
dv/dt
Voltage Rate Of Change (Rated VR)
10000
V/us
IF=7.5A @TJ=125oC
Maximum Forward
0.65
0.90
0.80
VF
IF=15A @TJ=25oC
V
Voltage (Note 1)
IF=15A @TJ=125oC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
1.0
50
IR
mA
@TJ=125oC
3.0
oC/W
pF
oC
ROJC
CJ
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance Per Element (Note 3)
Operating Temperature Range
400
-55 to +150
-55 to +175
TJ
TSTG
Storage Temperature Range
oC
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MBR1550CT thru MBR1560CT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
15
10
5
150
125
100
75
50
RESISTIVE OR
INDUCTIVE LOAD
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
25
20
NUMBER OF CYCLES AT 60Hz
50
75
100
125
150
175
1
2
5
10
50
100
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
10
10
J
T = 125 C
1.0
0.1
T = 75 C
J
1.0
0.1
0.01
J
T = 25 C
J
T = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.001
140
20
40
60
80
100
120
0
0.8
0.9
0.1 0.2
0.3
0.4
0.5
0.6
0.7
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
1000
J
T = 25 C, f= 1MHz
100
0.1
1
REVERSE VOLTAGE , VOLTS
100
4
10
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