SM3319NSQGC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM3319NSQGC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总12页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM3319NSQA/SM3319NSQG
®
N-Channel Enhancement Mode MOSFET
Pin Description
Features
Top View Bottom View
Top View Bottom View
·
30V/23A,
D
D
D
D
D
RDS(ON) = 21mW(max.) @ VGS = 10V
RDS(ON) = 30mW(max.) @ VGS = 4.5V
D
D
D
G
G
S
S
S
S
S
S
·
·
·
·
Provide Excellent Qgd x RDS(ON)
100% UIS + Rg Tested
DFN3x3A-8_EP
DFN3x3D-8_EP
Reliable and Rugged
(5,6,7,8)
D D D D
Lead Free andGreen DevicesAvailable
(RoHSCompliant)
(4)
G
Applications
·
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S S S
( 1, 2, 3 )
N-ChannelMOSFET
Ordering and Marking Information
Package Code
QA : DFN3x3A-8_EP
SM3319NS
QG : DFN3x3D-8_EP
Operating Junction Temperature Range
C : -55 to 150 oC
Assembly Material
Handling Code
Handling Code
Temperature Range
TR : Tape & Reel
Assembly Material
Package Code
G : Halogen and Lead Free Device
SM
3319
XXXXX
SM3319NS QA/QG :
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
VDSS
Parameter
Rating
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGSS
±20
7
TA=25°C
TA=70°C
a
ID
Continuous Drain Current (VGS=10V)
Pulsed Drain Current (VGS=10V)
Continuous Drain Current (VGS=10V)
Diode Continuous Forward Current
Avalanche Current, Single pulse
5.6
a
IDM
28
TC=25°C
TC=70°C
23
c
ID
A
19
a
IS
1.5
L=0.1mH
L=0.5mH
L=0.1mH
L=0.5mH
13
b
IAS
7
8.45
12.25
150
-55 to 150
1.56
1
b
EAS
Avalanche Energy, Single pulse
mJ
TJ
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
TA=25°C
a
PD
Maximum Power Dissipation
Maximum Power Dissipation
TA=70°C
W
TC=25°C
17.8
11.4
50
c
PD
TC=70°C
t £ 10s
a
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
RqJA
Steady State
Steady State
80
°C/W
c
7
RqJC
Note a：Surface Mounted on 1in2 pad area, t £ 10sec.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：The power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal
resistance (RqJC ) when additional heat sink is used.
2
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
30
-
-
-
1
V
VGS=0V, IDS=250mA
VDS=24V, VGS=0V
-
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
-
-
30
2.5
±100
21
-
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.5
1.8
-
V
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=8A
-
-
-
-
nA
17
25.5
23
d
RDS(ON) Drain-Source On-state Resistance
TJ=125°C
mW
VGS=4.5V, IDS=5A
ISD=1A, VGS=0V
30
Diode Characteristics
d
VSD
Diode Forward Voltage
Reverse Recovery Time
Charge Time
-
-
-
-
-
0.75
12
1.1
V
e
trr
-
-
-
-
ta
tb
6.2
5.8
3.7
ns
nC
ISD=8A, dlSD/dt=100A/ms
Discharge Time
e
Qrr
Reverse Recovery Charge
Dynamic Characteristics e
RG
Ciss
Coss
Crss
td(ON)
tr
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1
300
50
30
-
1.5
415
70
40
5.5
9
3
550
100
60
9
W
Input Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
pF
VDD=15V, RL=15W,
IDS=1A, VGEN=10V,
RG=6W
-
18
25
7
ns
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
-
14
3.6
-
VDS=15V, VGS=4.5V,
IDS=8A
Qg
Total Gate Charge
-
3.8
5.5
Qg
Total Gate Charge
-
-
-
-
8
13
0.7
1.8
2.1
nC
Qgth
Qgs
Qgd
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
0.4
1.1
1.6
VDS=15V, VGS=10V,
IDS=8A
Note d：Pulse test ; pulse width £ 300 ms, duty cycle £ 2%.
Note e：Guaranteed by design, not subject to production testing.
3
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Typical Operating Characteristics
Power Dissipation
Drain Current
2.0
8
6
4
2
0
1.5
1.0
0.5
TA=25oC,VG=10V
TA=25oC
0.0
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
100
10
Duty = 0.5
it
m
i
L
)
0.2
n
o
(
s
d
R
0.1
0.05
300ms
1
1ms
0.1
0.02
10ms
0.01
100ms
0.1
1s
Single Pulse
DC
Mounted on 1in2 pad
qJA : 50 oC/W
TA=25oC
R
0.01
0.01
1E-4 1E-3 0.01
0.1
1
10
100
0.01
0.1
1
10
100 300
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
4
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Typical Operating Characteristics (Cont.)
Power Dissipation
Drain Current
28
24
20
16
12
8
20
16
12
8
4
4
TC=25oC,VG=10V
TC=25oC
20 40 60 80 100 120 140 160
0
0
0
20 40 60 80 100 120 140 160
0
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
3
1
100
10
1
Duty = 0.5
0.2
100ms
0.1
0.1
0.01
1E-3
1E-4
0.05
0.02
0.01
1ms
10ms
DC
Single Pulse
TC=25oC
R
qJC :7oC/W
0.1
0.01
0.1
1
10
100
1E-6
1E-5
1E-4
1E-3
0.01 0.05
VDS - Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
5
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
30
25
20
15
10
5
36
32
28
24
20
16
12
8
VGS=4,5,6,7,8,9,10V
3.5V
VGS=4.5V
VGS=10V
3V
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
40
35
30
25
20
15
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=8A
IDS =250mA
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
6
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VGS = 10V
IDS = 8A
Tj=150oC
Tj=25oC
1
RON@Tj=25oC: 17mW
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
600
500
400
300
200
100
0
10
Frequency=1MHz
VDS=15V
IDS=8A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
15
Crss
5
0
1
2
3
4
5
6
7
8
0
10
20
25
30
VDS - Drain - Source Voltage (V)
QG - Gate Charge (nC)
7
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Typical Operating Characteristics (Cont.)
Transfer Characteristics
30
25
20
15
Tj=125oC
10
Tj=-55oC
Tj=25oC
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-Source Voltage (V)
8
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01W
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
9
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Classification Profile
11
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
®
SM3319NSQA/SM3319NSQG
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
Preheat & Soak
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
350
Package
Thickness
Volume mm3
<350
<2.5 mm
235 C
220 C
°
°
2.5 mm
220 C
220 C
³
°
°
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
>2000
<350
260 °C
260 °C
1.6 mm – 2.5 mm
³ 2.5 mm
260 °C
250 °C
250 °C
245 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
Customer Service
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5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright ã Sinopower Semiconductor, Inc.
Rev. A.8 - July, 2015
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