SM1A50NHG [SINOPWER]
N-Channel Enhancement Mode MOSFET;型号: | SM1A50NHG |
厂家: | Sinopower Semiconductor Inc |
描述: | N-Channel Enhancement Mode MOSFET |
文件: | 总10页 (文件大小:238K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SM1A54NHG
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
100V/50A,
D
RDS(ON)= 15.6mΩ (max.) @ VGS=10V
100% UIS + Rg Tested
Reliable and Rugged
S
•
•
•
G
Top View of TO-263-2
Lead Free andGreenDevicesAvailable
(RoHSCompliant)
D
Applications
G
•
Power Management for SMPS.
• DC-DC Converter.
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
SM1A54NH
G : TO-263-2
Assembly Material
Handling Code
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
Temperature Range
Package Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
SM1A54NH G :
SM1A54NH
XXXXX
XXXXX - Lot Code
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
1
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
100
±20
150
-55 to 150
25
V
Maximum Junction Temperature
Storage Temperature Range
°C
TSTG
IS
Diode Continuous Forward Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=25°C
TC=100°C
A
50
ID
Continuous Drain Current
Pulsed Drain Current
32
A
a
IDM
200
83
PD
RθJC
ID
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
W
°C/W
A
33
1.5
TA=25°C
TA=70°C
TA=25°C
TA=70°C
8.9
7.1
2.5
PD
Maximum Power Dissipation
W
1.6
c
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
50
°C/W
A
RθJA
b
IAS
L=0.5mH
L=0.5mH
20
b
EAS
100
mJ
Note a:Pulse width limited by maximum junction temperature.
Note b:UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c:Surface Mounted on 1in2 pad area.
Copyright Sinopower Semiconductor, Inc.
2
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
100
-
-
-
1
V
VGS=0V, IDS=250µA
VDS=80V, VGS=0V
-
-
IDSS Zero Gate Voltage Drain Current
µA
TJ=85°C
-
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
2
-
3
-
4
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=25A
±100
15.6
nA
mΩ
d
RDS(ON) Drain-Source On-state Resistance
-
13
Diode Characteristics
d
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=25A, VGS=0V
-
-
-
0.8
42
67
1.3
V
-
-
ns
nC
ISD=25A, dlSD/dt=100A/µs
Qrr
Dynamic Characteristics e
RG
Ciss
Coss
Crss
td(ON)
tr
Gate Resistance
VGS=0V,VDS=0V,f=1MHz
-
-
-
-
-
-
-
-
1.0
-
Ω
Input Capacitance
1130 1470
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
400
32
17
8
-
pF
-
31
15
44
81
VDD=30V, RL=30Ω,
IDS=1A, VGEN=10V,
RG=6Ω
ns
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
24
45
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
20
7
28
-
VDS=50V, VGS=10V,
IDS=25A
nC
5
-
Note d:Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note e:Guaranteed by design, not subject to production testing.
Copyright Sinopower Semiconductor, Inc.
3
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Typical Operating Characteristics
Power Dissipation
Drain Current
90
60
50
40
30
20
10
0
75
60
45
30
15
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature
Safe Operation Area
Thermal Transient Impedance
500
100
3
1
Duty = 0.5
0.2
0.1
0.1
0.01
1E-3
1E-4
0.05
100µs
0.02
0.01
10
1
300µs
1ms
Single Pulse
10ms
TC=25oC
R
θJC : 1.5oC/W
DC
0.1
0.1
1
10
100
400
1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.5
VDS - Drain - Source Voltage (V)
Square Wave PulseDuration (sec)
Copyright Sinopower Semiconductor, Inc.
4
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
24
21
18
15
12
9
160
140
120
100
80
VGS=9,10V
8V
7V
VGS=10V
6V
60
5.5V
40
5V
6
20
4.5V
0
3
0
1
2
3
4
5
6
0
20
40
60
80
100
120
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
35
30
25
20
15
10
5
1.4
1.2
1.0
0.8
0.6
0.4
IDS=25A
IDS=250µA
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
Copyright Sinopower Semiconductor, Inc.
5
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Typical Operating Characteristics (Cont.)
Source-Drain Diode Forward
Drain-Source On Resistance
200
100
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V
IDS = 25A
Tj=150oC
10
Tj=25oC
1
RON@Tj=25oC: 13mΩ
0.1
0.0
0.4
0.8
1.2
1.6
-50 -25
0
25 50 75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1800
1500
1200
900
600
300
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
VDS= 50V
IDS= 25A
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40
0
4
8
12
16
20
VDS -Drain-Source Voltage (V)
QG -Gate Charge (nC)
Copyright Sinopower Semiconductor, Inc.
6
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
Copyright Sinopower Semiconductor, Inc.
7
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
Copyright Sinopower Semiconductor, Inc.
8
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Classification Profile
Copyright Sinopower Semiconductor, Inc.
9
www.sinopowersemi.com
Rev. A.1 - September, 2017
SM1A54NHG
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
Time 25 C to peak temperature
)
6 C/second max.
6 C/second max.
°
°
6 minutes max.
8 minutes max.
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm3
<350
Volume mm3
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Volume mm3
<350
Volume mm3
350-2000
Volume mm3
Thickness
>2000
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
260 °C
250 °C
260 °C
250 °C
245 °C
260 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
Customer Service
Sinopower Semiconductor, Inc.
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
Copyright Sinopower Semiconductor, Inc.
10
www.sinopowersemi.com
Rev. A.1 - September, 2017
相关型号:
©2020 ICPDF网 联系我们和版权申明