S-5841A50B-I6T1U [SII]

TEMPERATURE SWITCH IC;
S-5841A50B-I6T1U
型号: S-5841A50B-I6T1U
厂家: SEIKO INSTRUMENTS INC    SEIKO INSTRUMENTS INC
描述:

TEMPERATURE SWITCH IC

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S-5841 Series  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
www.sii-ic.com  
© SII Semiconductor Corporation, 2007-2015  
Rev.2.2_01  
The S-5841 Series is a temperature switch IC (thermostat IC) which detects the temperature with a temperature accuracy of  
2.5°C. The output inverts when temperature reaches the detection temperature. The S-5841 Series restores the output  
voltage when the temperature drops to the level of release temperature.  
The S-5841 Series operates at the lower power supply voltage of 2.2 V and its current consumption is 10 μA typ. due to  
CMOS configuration.  
A temperature sensor with the negative temperature coefficient, a reference voltage generation circuit, a comparator and a  
delay circuit are integrated on one chip, and enclosed into the packages SOT-23-5 and SNT-6A.  
Features  
Detection temperature:  
Low voltage operation:  
TDET = +40°C to +100°C, +1°C step, detection accuracy: 2.5°C  
DD = 2.2 V min.  
(Detection temperature = +55°C to +100°C, Ta = 40°C to +100°C)  
DD = 10 μA typ. (Ta = +25°C)  
V
Low current consumption:  
Hysteresis temperature can be switched in 0°C, 2°C, 4°C and 10°C.  
Selectable output logic in active "H" or "L"  
Selectable output form in CMOS or Nch open drain  
Operation temperature range:  
Lead-free, Sn 100%, halogen-free*1  
I
Ta = 40°C to +125°C  
*1. Refer to "Product Name Structure" for details.  
Applications  
Fan control  
Air conditioning system  
Various electronic devices  
Packages  
SOT-23-5  
SNT-6A  
1
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Block Diagrams  
1. CMOS output product  
VDD  
Temperature  
sensor  
+
Logic circuit  
(selectable)  
Delay circuit  
DET  
Reference voltage  
generation circuit  
VSS  
HYS1 HYS2*1  
RT  
*1. The HYS2 pin is not equipped for SOT-23-5.  
Figure 1  
2. Nch open drain output product  
VDD  
Temperature  
sensor  
+
Logic circuit  
(selectable)  
Delay circuit  
DET  
Reference voltage  
generation circuit  
VSS  
HYS1 HYS2*1  
RT  
*1. The HYS2 pin is not equipped for SOT-23-5.  
Figure 2  
2
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Product Name Structure  
Users are able to select the option for hysteresis temperature, detection temperature, output form and logic, package for the  
S-5841 Series.  
1. Product name  
1. 1 SOT-23-5  
S-5841  
x
xx  
x
-
M5T1  
x
Environmental code  
U: Lead-free (Sn 100%), halogen-free  
G: Lead-free (for details, please contact our sales office)  
Package abbreviation and IC packing specifications*1  
M5T1: SOT-23-5, Tape  
Output form and Output logic*2  
A: CMOS output (Active "H")  
B: CMOS output (Active "L")  
C: Nch open drain output (Active "H")  
D: Nch open drain output (Active "L")  
*3  
Detection temperature (TDET  
40 to 100  
)
When the detection temperature is +80°C, it is expressed as 80.  
When the detection temperature is +100°C, it is expressed as A0.  
Option*4  
A: Hysteresis temperature switched in 2°C and 10°C  
B: Hysteresis temperature switched in 4°C and 10°C  
Product name  
*1. Refer to the tape drawing.  
*2. The DET pin output can be selected the output logic in active "H" or "L".  
The DET pin output can be selected the output form in CMOS or Nch open drain.  
*3. The detection temperature (TDET) can be set in the range of +40°C to +100°C at 1°C step.  
*4. The hysteresis temperature is set by the HYS1 pin. By option, the hysteresis temperature of the product is  
selectable in 2°C and 10°C / 4°C and 10°C.  
3
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
1. 2 SNT-6A  
S-5841  
A
xx  
x
-
I6T1  
U
Environmental code  
U: Lead-free (Sn 100%), halogen-free  
Package abbreviation and IC packing specifications*1  
I6T1: SNT-6A, Tape  
Output form and Output logic*2  
A: CMOS output (Active "H")  
B: CMOS output (Active "L")  
C: Nch open drain output (Active "H")  
D: Nch open drain output (Active "L")  
*3  
Detection temperature (TDET  
40 to 100  
)
When the detection temperature is +80°C, it is expressed as 80.  
When the detection temperature is +100°C, it is expressed as A0.  
Option*4  
A: Hysteresis temperature switched in 0°C, 2°C, 4°C and 10°C  
Product name  
*1. Refer to the tape drawing.  
*2. The DET pin output can be selected the output logic in active "H" or "L".  
The DET pin output can be selected the output form in CMOS or Nch open drain.  
*3. The detection temperature (TDET) can be set in the range of +40°C to +100°C at 1°C step.  
*4. The hysteresis temperature can be switched in 0°C, 2°C, 4°C, 10°C, and is set by the HYS1 pin and the  
HYS2 pin.  
2. Packages  
Table 1 Package Drawing Codes  
Package Name  
SOT-23-5  
Dimension  
Tape  
Reel  
Land  
MP005-A-P-SD  
PG006-A-P-SD  
MP005-A-C-SD  
PG006-A-C-SD  
MP005-A-R-SD  
PG006-A-R-SD  
SNT-6A  
PG006-A-L-SD  
4
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
3. Product name list  
3. 1 SOT-23-5  
Table 2  
Detection  
Temperature (TDET  
Hysteresis  
Temperature (THYS  
Product Name  
DET Pin Output Form DET Pin Output Logic  
)
)
S-5841A55D-M5T1x  
S-5841A65D-M5T1x  
S-5841A75D-M5T1x  
S-5841A85D-M5T1x  
S-5841A95D-M5T1x  
+55°C  
+65°C  
+75°C  
+85°C  
+95°C  
Nch open drain  
Nch open drain  
Nch open drain  
Nch open drain  
Nch open drain  
Active "L"  
Active "L"  
Active "L"  
Active "L"  
Active "L"  
2°C, 10°C  
2°C, 10°C  
2°C, 10°C  
2°C, 10°C  
2°C, 10°C  
Remark1. Please contact our sales office for products other than those specified above.  
2. x: G or U  
3. Please select products of environmental code = U for Sn 100%, halogen-free products.  
3. 2 SNT-6A  
Table 3  
Detection  
Temperature (TDET  
Hysteresis  
Temperature (THYS)  
Product Name  
DET Pin Output Form DET Pin Output Logic  
)
S-5841A70A-I6T1U  
S-5841A80A-I6T1U  
S-5841A90A-I6T1U  
S-5841A50D-I6T1U  
+70°C  
+80°C  
+90°C  
+50°C  
CMOS  
Active "H"  
Active "H"  
Active "H"  
Active "L"  
0°C, 2°C, 4°C, 10°C  
0°C, 2°C, 4°C, 10°C  
0°C, 2°C, 4°C, 10°C  
0°C, 2°C, 4°C, 10°C  
CMOS  
CMOS  
Nch open drain  
Remark  
Please contact our sales office for products other than those specified above.  
5
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Pin Configurations  
1. SOT-23-5  
Table 4  
Top view  
Pin No.  
Symbol  
HYS1*1  
Description  
5
4
1
2
3
4
5
Hysteresis pin 1  
GND pin  
VSS  
RT*2  
VDD  
DET  
Test pin  
Power supply pin  
Output pin  
1
2
3
*1. Fix the HYS1 pin as VDD pin or VSS pin in use.  
*2. Set the RT pin open in use.  
Figure 3  
2. SNT-6A  
Table 5  
Pin No.  
Symbol  
RT*1  
Description  
1
2
3
4
5
6
Test pin  
Top view  
VSS  
HYS1 *2  
GND pin  
1
2
3
6
5
4
Hysteresis pin 1  
Output pin  
DET  
HYS2*2  
VDD  
Hysteresis pin 2  
Power supply pin  
Figure 4  
*1. Set the RT pin open in use.  
*2. Fix the HYS1 pin and the HYS2 pin as VDD pin or VSS pin  
in use.  
6
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Absolute Maximum Ratings  
Table 6  
(Ta = +25°C unless otherwise specified)  
Item  
Power supply voltage (VSS = 0 V)  
Pin voltage  
Symbol  
Absolute Maximum Rating  
Unit  
V
VDD  
VRT, VHYS1, VHYS2  
VSS + 12  
VSS 0.3 to VDD + 0.3  
VSS 0.3 to VDD + 0.3  
VSS 0.3 to VSS + 12.0  
600*1  
V
CMOS output product  
V
Output voltage  
VDET  
Nch open drain product  
SOT-23-5  
V
mW  
mW  
°C  
°C  
Power dissipation  
PD  
SNT-6A  
4001*  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
40 to +125  
55 to +150  
*1. When mounted on board  
[Mounted board]  
(1) Board size :  
114.3 mm × 76.2 mm × t1.6 mm  
(2) Board name : JEDEC STANDARD51-7  
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical  
damage. These values must therefore not be exceeded under any conditions.  
7
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
DC Electrical Characteristics  
1. CMOS output product  
1. 1 SOT-23-5  
Table 7  
(Ta = +25°C, unless otherwise specified)  
Test  
circuit  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
TDET = +55°C to +100°C  
TDET = +40°C to +54°C  
2.2  
2.6  
10.0  
10.0  
V
V
1
1
1
1
1
1
1
2
2
Power supply voltage*1  
Detection temperature  
VDD  
+TD  
TDET 2.5 TDET TDET + 2.5 °C  
Hysteresis option  
HYS1  
"H"  
2
°C  
°C  
°C  
°C  
mA  
mA  
A
B
Hysteresis of detection  
temperature*2  
THYS  
"L"  
10  
4
"H"  
"L"  
10  
9.4  
2.3  
IDETH  
IDETL  
VDET = 2.2 V  
2
VDD = 3.0 V,  
Output current  
apply to DET pin  
VDET = 0.4 V  
0.5  
Current consumption  
during operation  
IDD  
VDD = 3.0 V  
10  
20  
μA  
1
HYS1 pin input voltage "H" VIH1  
HYS1 pin input voltage "L" VIL1  
HYS1 pin input current "H" IIH1  
HYS1 pin input current "L" IIL1  
0.8 × VDD  
0.1  
0.2 × VDD  
0.1  
V
V
3
3
3
3
VDD = 3.0 V, VHYS1 = 3.0 V  
μA  
μA  
VDD = 3.0 V, VHYS1 = 0 V  
0.1  
0.1  
*1. The minimum operation voltages are as follows under the operation ambient temperature over +100°C.  
V
V
DD = 2.3 V min. (Detection temperature = +55°C to +100°C)  
DD = 2.7 V min. (Detection temperature = +40°C to +54°C)  
*2. The hysteresis temperature can be set by the HYS1 pin.  
These two types are selectable by option.  
Hysteresis option A: 2°C of hysteresis temperature during HYS1 = "H",  
10°C of hysteresis temperature during HYS1 = "L"  
Hysteresis option B: 4°C of hysteresis temperature during HYS1 = "H",  
10°C of hysteresis temperature during HYS1 = "L"  
[Fahrenheit Celsius Conversion equation]  
°C = (°F 32) × 5 / 9  
°F = 32 + °C × 9 / 5  
8
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
1. 2 SNT-6A  
Table 8  
(Ta = +25°C, unless otherwise specified)  
Test  
circuit  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
TDET = +55°C to +100°C  
TDET = +40°C to +54°C  
2.2  
2.6  
10.0  
10.0  
V
V
1
1
1
1
1
1
1
2
2
Power supply voltage*1  
Detection temperature  
VDD  
+TD  
HYS1  
"H"  
TDET 2.5 TDET TDET + 2.5 °C  
HYS2  
"H"  
2
°C  
°C  
°C  
°C  
mA  
mA  
Hysteresis of detection  
temperature*2  
THYS  
"H"  
"L"  
4
"L"  
"H"  
10  
0
"L"  
"L"  
IDETH  
IDETL  
VDET = 2.2 V  
2
9.4  
2.3  
VDD = 3.0 V,  
Output current  
apply to DET pin  
VDET = 0.4 V  
0.5  
Current consumption  
during operation  
IDD  
VDD = 3.0 V  
10  
20  
μA  
1
HYS1 pin input voltage "H" VIH1  
HYS1 pin input voltage "L" VIL1  
HYS1 pin input current "H" IIH1  
HYS1 pin input current "L" IIL1  
HYS2 pin input voltage "H" VIH2  
HYS2 pin input voltage "L" VIL2  
HYS2 pin input current "H" IIH2  
HYS2 pin input current "L" IIL2  
0.8 × VDD  
0.1  
0.1  
0.8 × VDD  
0.2 × VDD  
0.1  
V
V
3
3
3
3
3
3
3
3
VDD = 3.0 V, VHYS1 = 3.0 V  
μA  
μA  
V
VDD = 3.0 V, VHYS1 = 0 V  
0.1  
0.2 × VDD  
0.1  
V
VDD = 3.0 V, VHYS2 = 3.0 V  
0.1  
0.1  
μA  
μA  
VDD = 3.0 V, VHYS2 = 0 V  
0.1  
*1. The minimum operation voltages are as follows under the operation ambient temperature over +100°C.  
VDD = 2.3 V min. (Detection temperature = +55°C to +100°C)  
VDD = 2.7 V min. (Detection temperature = +40°C to +54°C)  
*2. The hysteresis temperature can be switched in 0°C, 2°C, 4°C, 10°C, and is set by the HYS1 pin and HYS2 pin.  
[Fahrenheit Celsius Conversion equation]  
°C = (°F 32) × 5 / 9  
°F = 32 + °C × 9 / 5  
9
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
2. Nch open drain output  
2. 1 SOT-23-5  
Table 9  
(Ta = +25°C, unless otherwise specified)  
Test  
circuit  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
TDET = +55°C to +100°C  
TDET = +40°C to +54°C  
2.2  
2.6  
10.0  
10.0  
V
V
1
1
1
1
1
1
1
2
2
Power supply voltage*1  
Detection temperature  
VDD  
+TD  
TDET 2.5 TDET TDET + 2.5 °C  
Hysteresis option  
HYS1  
"H"  
2
°C  
°C  
°C  
°C  
mA  
nA  
A
B
Hysteresis of detection  
temperature*2  
THYS  
"L"  
10  
4
"H"  
"L"  
10  
2.3  
Output current  
IDETL  
ILEAK  
VDET = 0.4 V, VDD = 3.0 V  
VDET = 10.0 V, VDD = 3.0 V  
0.5  
100  
Leakage current  
Current consumption  
during operation  
IDD  
VDD = 3.0 V  
10  
20  
μA  
1
HYS1 pin input voltage "H" VIH1  
HYS1 pin input voltage "L" VIL1  
HYS1 pin input current "H" IIH1  
HYS1 pin input current "L" IIL1  
0.8 × VDD  
0.1  
0.2 × VDD  
0.1  
V
V
3
3
3
3
VDD = 3.0 V, VHYS1 = 3.0 V  
μA  
μA  
VDD = 3.0 V, VHYS1 = 0 V  
0.1  
0.1  
*1. The minimum operation voltages are as follows under the operation ambient temperature over +100°C.  
VDD = 2.3 V min. (Detection temperature = +55°C to +100°C)  
VDD = 2.7 V min. (Detection temperature = +40°C to +54°C)  
*2. The hysteresis temperature can be set by the HYS1 pin.  
These two types are selectable by option.  
Hysteresis option A: 2°C of hysteresis temperature during HYS1 = "H",  
10°C of hysteresis temperature during HYS1 = "L"  
Hysteresis option B: 4°C of hysteresis temperature during HYS1 = "H",  
10°C of hysteresis temperature during HYS1 = "L"  
[Fahrenheit Celsius Conversion equation]  
°C = (°F 32) × 5 / 9  
°F = 32 + °C × 9 / 5  
10  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
2. 2 SNT-6A  
Table 10  
(Ta = +25°C, unless otherwise specified)  
Test  
circuit  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
TDET = +55°C to +100°C  
TDET = +40°C to +54°C  
2.2  
2.6  
10.0  
10.0  
V
V
1
1
1
1
1
1
1
2
2
Power supply voltage*1  
Detection temperature  
VDD  
+TD  
HYS1  
"H"  
TDET 2.5 TDET TDET + 2.5 °C  
HYS2  
"H"  
2
°C  
°C  
°C  
°C  
mA  
nA  
Hysteresis of detection  
temperature*2  
THYS  
"H"  
"L"  
4
"L"  
"H"  
10  
0
"L"  
"L"  
Output current  
IDETL  
ILEAK  
VDET = 0.4 V, VDD = 3.0 V  
VDET = 10.0 V, VDD = 3.0 V  
0.5  
2.3  
100  
Leakage current  
Current consumption  
during operation  
IDD  
VDD = 3.0 V  
10  
20  
μA  
1
HYS1 pin input voltage "H" VIH1  
HYS1 pin input voltage "L" VIL1  
HYS1 pin input current "H" IIH1  
HYS1 pin input current "L" IIL1  
HYS2 pin input voltage "H" VIH2  
HYS2 pin input voltage "L" VIL2  
HYS2 pin input current "H" IIH2  
HYS2 pin input current "L" IIL2  
0.8 × VDD  
0.1  
0.1  
0.8 × VDD  
0.2 × VDD  
0.1  
V
V
3
3
3
3
3
3
3
3
VDD = 3.0 V, VHYS1 = 3.0 V  
VDD = 3.0 V, VHYS1 = 0 V  
μA  
μA  
V
0.1  
0.2 × VDD  
0.1  
V
VDD = 3.0 V, VHYS2 = 3.0 V  
0.1  
0.1  
μA  
μA  
VDD = 3.0 V, VHYS2 = 0 V  
0.1  
*1. The minimum operation voltages are as follows under the operation ambient temperature over +100°C.  
VDD = 2.3 V min. (Detection temperature = +55°C to +100°C)  
VDD = 2.7 V min. (Detection temperature = +40°C to +54°C)  
*2. The hysteresis temperature can be switched in 0°C, 2°C, 4°C, 10°C, and is set by the HYS1 pin and HYS2 pin.  
[Fahrenheit Celsius Conversion equation]  
°C = (°F 32) × 5 / 9  
°F = 32 + °C × 9 / 5  
AC Electrical Characteristics  
Table 11  
Test  
circuit  
Item  
Symbol  
tdelay  
Condition  
Min.  
Typ.  
380  
Max.  
Unit  
V
DD = 3.0 V,  
Ta = detection temperature  
Noise suppression time  
μs  
11  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Test Circuits  
Open  
RT  
A
R*1  
100 kΩ  
VDD  
V
CIN  
S-5841 Series  
VDD  
or  
VSS  
HYS1  
HYS2*2  
DET  
VSS  
V
L
C
*1. Resistor (R) is unnecessary for the CMOS output product.  
*2. The HYS2 pin is not equipped for SOT-23-5.  
Figure 5 Test Circuit 1  
Open  
VDD  
RT  
V
C
IN  
S-5841 Series  
VDD  
or  
VSS  
HYS1  
HYS2*1  
DET  
A
VSS  
V
C
L
*1. The HYS2 pin is not equipped for SOT-23-5.  
Figure 6 Test Circuit 2  
Open  
RT  
R*1  
100 kΩ  
VDD  
V
C
IN  
S-5841 Series  
A
HYS1  
DET  
A
HYS2*2  
VSS  
V
C
L
*1. Resistor (R) is unnecessary for the CMOS output product.  
*2. The HYS2 pin is not equipped for SOT-23-5.  
Figure 7 Test Circuit 3  
12  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Operation  
1. Basic operation  
The S-5841 Series is a temperature switch IC (thermostat IC) which detects a certain temperature and sends a signal to  
an external device. Various combinations of the parameters such as the detection temperature, output form and output  
logic can be selected.  
Following is about the operation when the DET pin output logic is active "H".  
After applying the power supply, the S-5841 Series starts to detect the temperature. If it is lower than the detection  
temperature (+TD), the DET pin output keeps "L". The temperature rises and exceeds the detection temperature, the  
DET pin is set to "H".  
After the detection, the temperature drops and reaches the release temperature (+TD THYS), the DET pin returns to "L".  
Figure 8 is the timing chart.  
Hysteresis temperature  
(THYS  
)
Detection temperature (T )  
D
Ambient temperature (Ta)  
H
L
DET pin output  
Figure 8 Operation when DET Pin Output Logic is Active "H"  
2. Hysteresis setting  
2. 1 SOT-23-5  
The hysteresis temperature can be set by the HYS1 pin. By option, the hysteresis temperature of the product is  
selectable in 2°C and 10°C / 4°C and 10°C.  
Table 12 Hysteresis Option A  
Setting Pin  
Hysteresis Temperature  
HYS1  
"H"  
"L"  
2°C  
10°C  
Table 13 Hysteresis Option B  
Setting Pin  
Hysteresis Temperature  
HYS1  
"H"  
4°C  
"L"  
10°C  
13  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
2. 2 SNT-6A  
The hysteresis temperature can be switched in 0°C, 2°C, 4°C, 10°C, and is set by the HYS1 pin and HYS2 pin.  
Table 14 Hysteresis Option A  
Setting Pin  
Hysteresis Temperature  
HYS1  
"H"  
HYS2  
"H"  
2°C  
4°C  
"H"  
"L"  
"L"  
"H"  
10°C  
0°C  
"L"  
"L"  
3. Delay circuit  
The S-5841 Series sets the noise suppression time (tdelay) via the delay circuit. By this, the S-5841 Series prevents false  
detection operations of the DET pin output.  
The followings are about the operation when the DET pin output logic is active "H".  
3. 1 The temperature is the detection temperature or less  
The output from a comparator is "H", and the DET pin is "L". Due to noise or others, the output from a comparator is  
inverted to "L" once; however, the DET pin keeps "L" if this status is tdelay or shorter.  
3. 2 The temperature exceeds the detection temperature  
The output from a comparator gets "L". And the DET pin gets "H" after the period has passed tdelay or longer.  
14  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Standard Circuit  
Open  
RT  
R*1  
100 kΩ  
VDD  
C
IN  
S-5841 Series  
VDD  
or  
VSS  
HYS1  
HYS2*2  
DET  
VSS  
CL  
*1. Resistor (R) is unnecessary for the CMOS output product.  
*2. The HYS2 pin is not equipped with SOT-23-5.  
Figure 9  
Caution The above connection diagram will not guarantee successful operation. Perform thorough evaluation  
using actual application to set the constant.  
Precautions  
Set a capacitor (CIN) of 0.1 μF or more between the VDD and VSS pin for stabilization.  
Set a capacitor (CL) of about 1 μF for the DET pin to prevent malfunction caused by the noise when the power  
supply is applied.  
The S-5841 Series may oscillate by setting a capacitor to the RT pin. Set the RT pin open in use.  
If the RT pin is short-circuited to VSS, the DET pin becomes active in the S-5841 Series.  
Fix the HYS1 pin and the HYS2 pin VDD or VSS in use.  
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic  
protection circuit.  
SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any  
infringement by products, including this IC, of patents owned by a third party.  
15  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Characteristics (Typical Data)  
1. Current consumption vs. Power supply voltage characteristics  
14  
13  
+125°C  
12  
40°C  
11  
+25°C  
+100°C  
10  
9
8
0
1 2 3 4 5 6 7 8 9 10 11 12  
VDD [V]  
2. DET pin current "H" vs. Power supply voltage characteristics (CMOS output product only)  
VDET = VDD 0.8 V  
30  
25  
40°C  
20  
15  
+25°C  
10  
+100°C  
5
+125°C  
0
0
1 2 3 4 5 6 7 8 9 10 11 12  
V
DD [V]  
3. DET pin current "L" vs. Power supply voltage characteristics  
VDET = 0.4 V  
10  
8
40°C  
6
+25°C  
4
+100°C  
+125°C  
2
0
0
1 2 3 4 5 6 7 8 9 10 11 12  
VDD [V]  
4. Noise suppression time vs. Power supply voltage characteristics  
1500  
1250  
1000  
750  
500  
250  
0
0
1 2 3 4 5 6 7 8 9 10 11 12  
VDD [V]  
16  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
5. Response against heat (Output voltage vs. Time)  
5. 1 When packages are put into the air of +100 degrees from the air of +25 degrees at t = 0 s  
VDD = 3.0 V, CL = 0 μF, Detection temperature = +70°C, Active "L"  
4
3
2
1
0
1  
20 10  
0
10 20 30 40 50 60  
t [s]  
5. 2 When packages are put into the liquid of +100 degrees from the air of +25 degrees at t = 0 s  
VDD = 3.0 V, CL = 0 μF, Detection temperature = +70°C, Active "L"  
4
3
2
1
0
1  
20 10  
0
10 20 30 40 50 60  
t [s]  
6. Response against startup  
6. 1 The detection temperature or lower (Ta ≤ +TD)  
CL = 0 μF, Active "L"  
V
DD  
1 V / div.  
GND  
(= 3.0 V)  
1 V / div.  
GND  
DET  
t (100 μs / div.)  
6. 2 Higher than the detection temperature (Ta > +TD)  
CL = 0 μF, Active "L"  
V
DD  
1 V / div.  
GND  
(= 3.0 V)  
1 V / div.  
GND  
DET  
t (100 μs / div.)  
17  
TEMPERATURE SWITCH IC (THERMOSTAT IC)  
S-5841 Series  
Rev.2.2_01  
Marking Specifications  
1. SOT-23-5  
Top view  
(1) to (3):  
(4):  
Product code (refer to Product name vs. Product code)  
Lot number  
5
4
(1) (2) (3) (4)  
1
2
3
Product name vs. Product code  
Product Code  
Product Name  
(1)  
(2)  
H
(3)  
B
S-5841A55D-M5T1x  
S-5841A65D-M5T1x  
S-5841A75D-M5T1x  
S-5841A85D-M5T1x  
S-5841A95D-M5T1x  
Remark1. x: G or U  
T
T
T
T
T
H
C
D
E
H
H
H
F
2. Please select products of environmental code = U for Sn 100%, halogen-free products.  
2. SNT-6A  
Top view  
5
(1) to (3):  
(4) to (6):  
Product code (refer to Product name vs. Product code)  
Lot number  
6
4
(1) (2) (3)  
(4) (5) (6)  
1
2
3
Product name vs. Product code  
Product Code  
Product Name  
(1)  
(2)  
(3)  
G
H
I
S-5841A70A-I6T1U  
S-5841A80A-I6T1U  
S-5841A90A-I6T1U  
S-5841A50D-I6T1U  
T
T
T
T
I
I
I
H
A
18  
2.9±0.2  
1.9±0.2  
4
5
+0.1  
-0.06  
1
2
3
0.16  
0.95±0.1  
0.4±0.1  
No. MP005-A-P-SD-1.2  
TITLE  
SOT235-A-PKG Dimensions  
MP005-A-P-SD-1.2  
No.  
SCALE  
UNIT  
mm  
SII Semiconductor Corporation  
4.0±0.1(10 pitches:40.0±0.2)  
+0.1  
-0  
2.0±0.05  
0.25±0.1  
ø1.5  
+0.2  
-0  
4.0±0.1  
ø1.0  
1.4±0.2  
3.2±0.2  
3
4
2 1  
5
Feed direction  
No. MP005-A-C-SD-2.1  
TITLE  
SOT235-A-Carrier Tape  
MP005-A-C-SD-2.1  
No.  
SCALE  
UNIT  
mm  
SII Semiconductor Corporation  
12.5max.  
9.0±0.3  
Enlarged drawing in the central part  
ø13±0.2  
(60°)  
(60°)  
No. MP005-A-R-SD-1.1  
TITLE  
SOT235-A-Reel  
MP005-A-R-SD-1.1  
No.  
SCALE  
UNIT  
QTY.  
3,000  
mm  
SII Semiconductor Corporation  
1.57±0.03  
6
5
4
+0.05  
-0.02  
0.08  
1
2
3
0.5  
0.48±0.02  
0.2±0.05  
No. PG006-A-P-SD-2.0  
SNT-6A-A-PKG Dimensions  
PG006-A-P-SD-2.0  
TITLE  
No.  
SCALE  
UNIT  
mm  
SII Semiconductor Corporation  
+0.1  
-0  
ø1.5  
4.0±0.1  
2.0±0.05  
0.25±0.05  
+0.1  
ø0.5  
-0  
4.0±0.1  
0.65±0.05  
1.85±0.05  
5°  
3
2
5
1
6
4
Feed direction  
No. PG006-A-C-SD-1.0  
TITLE  
SNT-6A-A-Carrier Tape  
PG006-A-C-SD-1.0  
No.  
SCALE  
UNIT  
mm  
SII Semiconductor Corporation  
12.5max.  
9.0±0.3  
Enlarged drawing in the central part  
ø13±0.2  
(60°)  
(60°)  
No. PG006-A-R-SD-1.0  
SNT-6A-A-Reel  
TITLE  
PG006-A-R-SD-1.0  
No.  
SCALE  
UNIT  
QTY.  
5,000  
SII Semiconductor Corporation  
0.52  
2
1.36  
0.52  
1
0.3  
0.2  
1.  
2.  
(0.25 mm min. / 0.30 mm typ.)  
(1.30 mm ~ 1.40 mm)  
0.03 mm  
SNT  
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).  
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).  
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.  
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm  
or less from the land pattern surface.  
3. Match the mask aperture size and aperture position with the land pattern.  
4. Refer to "SNT Package User's Guide" for details.  
(0.25 mm min. / 0.30 mm typ.)  
(1.30 mm ~ 1.40 mm)  
1.  
2.  
SNT-6A-A  
-Land Recommendation  
TITLE  
No. PG006-A-L-SD-4.1  
No.  
PG006-A-L-SD-4.1  
SCALE  
UNIT  
mm  
SII Semiconductor Corporation  
Disclaimers (Handling Precautions)  
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and  
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without  
notice.  
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of  
any specific mass-production design.  
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or  
infringement of third-party intellectual property rights and any other rights due to the use of the information described  
herein.  
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.  
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute  
maximum ratings, operation voltage range and electrical characteristics, etc.  
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur  
due to the use of products outside their specified ranges.  
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or  
country where they are used and verify suitability, safety and other factors for the intended use.  
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all  
other export-related laws, and follow the required procedures.  
7. The products described herein must not be used or provided (exported) for the purposes of the development of  
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision  
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,  
missiles, or other military use.  
8. The products described herein are not designed to be used as part of any device or equipment that may affect the  
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,  
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,  
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle  
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.  
Especially, the products described herein cannot be used for life support devices, devices implanted in the human  
body and devices that directly affect human life, etc.  
Prior consultation with our sales office is required when considering the above uses.  
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our  
products.  
9. Semiconductor products may fail or malfunction with some probability.  
The user of these products should therefore take responsibility to give thorough consideration to safety design  
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing  
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.  
The entire system must be sufficiently evaluated and applied on customer's own responsibility.  
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be  
taken in the product design by the customer depending on the intended use.  
11. The products described herein do not affect human health under normal use. However, they contain chemical  
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips  
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.  
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where  
they are used.  
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.  
The information described herein does not convey any license under any intellectual property rights or any other  
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information  
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor  
Corporation is strictly prohibited.  
14. For more details on the information described herein, contact our sales office.  
1.0-2016.01  
www.sii-ic.com  

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