S-5470D21I-M5T1U [SII]
ULTRA-LOW CURRENT CONSUMPTION;
| 型号： | S-5470D21I-M5T1U |
| 厂家： | 
SEIKO INSTRUMENTS INC |
| 描述： | ULTRA-LOW CURRENT CONSUMPTION |
| 文件： | 总24页 (文件大小：1407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S-5470 Series
ULTRA-LOW CURRENT CONSUMPTION
NORMALLY-OFF FAINT SIGNAL DETECTION IC
www.sii-ic.com
© SII Semiconductor Corporation, 2012-2016
Rev.1.3_01
The S-5470 Series, developed by CMOS technology, is a normally-off faint signal detection IC with an ultra-low current
consumption.
This IC has a function to detect certain current level of 0.7 nA typ., which makes it possible to detect faint signals for a
variety of electric generating devices or sensor devices. It also has a function to detect the difference of current level, and
thus detects difference between strengths of two signals input at the same time.
Due to its ultra-low current consumption and low-voltage operation, the S-5470 Series is suitable for battery-operated
small mobile device applications.
Features
• Ultra-low current consumption:
• Faint current detection:
• Wide operation voltage range:
• Detection of faint signal:
• Detection of signal strength difference:
• Lead-free (Sn 100%), halogen-free
IDD ≤ 0.1 nA typ.
DET = 0.7 nA typ.
VDD = 0.9 V to 5.5 V
Detects faint signals of approximately 0.7 nW (1.0 V, 0.7 nA typ.)
Detects difference between strengths of two signals input at the same time
I
Applications
• Detects output signals of electric generating devices or sensor devices with high internal resistance
• Advanced sensing using two electric generating devices or sensor devices
• Miniaturization and low power consumption for various sensors of portable and wireless devices
Package
• SOT-23-5
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
Block Diagrams
1. CMOS output product
VDD
*1
*1
+
Current
adder
−
INP
+
*1
Logic
selection
Current
comparator
OUT
Current
amplifier
INM
IDET
−
*1
*1
VSS
*1. Parasitic diode
Figure 1
2. Nch open-drain output product
VDD
*1
+
Current
adder
−
INP
+
*1
*1
Logic
selection
Current
comparator
OUT
Current
amplifier
INM
IDET
−
*1
VSS
*1. Parasitic diode
Figure 2
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
Product Name Structure
Users can select the output form and output logic for the S-5470 Series. Refer to "1. Product name" regarding the
contents of the product name, "2. Package" regarding the package drawings, "3. Product name list" regarding
details of the product name.
1. Product name
S-5470
x
21
I
-
M5T1
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package abbreviation and IC packing specifications*1
M5T1: SOT-23-5, Tape
Operation temperature
I: Ta = −40°C to +85°C
Detection mode
21: Current amplifier current amplification ratio × 2
Output form and output logic
A: CMOS output (Active "H")
B: CMOS output (Active "L")
C: Nch open-drain output (Active "H")
D: Nch open-drain output (Active "L")
*1. Refer to the tape drawing.
2. Package
Table 1 Package Drawing Codes
Package Name
SOT-23-5
Dimension
MP005-A-P-SD
Tape
Reel
MP005-A-C-SD
MP005-A-R-SD
3. Product name list
Table 2
Product Name
Output Form
Output Logic
Active "H"
Active "L"
Detection Mode
S-5470A21I-M5T1U CMOS output
S-5470B21I-M5T1U CMOS output
Current amplifier current amplification ratio × 2
Current amplifier current amplification ratio × 2
Current amplifier current amplification ratio × 2
Current amplifier current amplification ratio × 2
S-5470C21I-M5T1U Nch open-drain output Active "H"
S-5470D21I-M5T1U Nch open-drain output Active "L"
Remark Please contact our sales office for products other than the above.
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
Pin Configuration
1. SOT-23-5
Top view
Table 3
5
4
Pin No.
Symbol
VDD
Description
Power supply pin
GND pin
1
2
3
4
5
VSS
INM
INP
Reference current input pin
Detection current input pin
Output pin
1
2
3
OUT
Figure 3
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
Absolute Maximum Ratings
Table 4
(Ta = +25°C unless otherwise specified)
Item
Power supply voltage
Input voltage
Symbol
VDD
Absolute Maximum Rating
VSS − 0.3 to VSS + 7.0
VSS − 0.3 to VSS + 7.0
VSS − 0.3 to VDD + 0.3
VSS − 0.3 to VSS + 7.0
20
Unit
V
VINP, VINM
V
CMOS output product
Output voltage
V
VOUT
Nch open-drain output product
V
ISOURCE
ISINK
PD
mA
mA
mW
°C
°C
Output pin current
20
600*1
Power dissipation
Operation ambient temperature
Storage temperature
Topr
−40 to +85
−55 to +125
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
700
600
500
400
300
200
100
0
100
150
50
0
Ambient Temperature (Ta) [°C]
Figure 4 Power Dissipation of Package (When Mounted on Board)
5
ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
Electrical Characteristics
Table 5
(Ta = +25°C, VDD = 3.0 V unless otherwise specified)
Test
Circuit
Item
Power supply voltage
Current consumption
Detection current
Release current
Symbol
VDD
Condition
Min.
Typ.
Max.
Unit
Ta = −40°C to +85°C
INP = VSS, VINM = VSS
0.9
−
−
−
5.5
10
V
−
1
1
2
V
0.01
0.02
0.7
nA
nA
nA
IDD
VINP = 1.0 V, VINM = VSS
10
IDET
IREL
−
0.52
0.88
IDET
×
IDET
×
IDET
×
−
nA
2
0.7
0.8
0.9
Detection current
temperature coefficient
Itc
Ta = −40°C to +85°C
−
0.5
−
%/°C
−
IINP
IINM
VINP = 1.0 V
VINM = 1.0 V
20
10
−
−
−
−
μA
μA
3
3
Input current
Current amplifier current
amplification ratio × 2
GINM
−
1.8
2.0
2.2
Times
4
VDD = 0.9 V
VDD = 3.0 V
0.01
3.5
0.5
7.0
−
0.4
4.8
1.7
9.2
−
−
−
−
−
15
mA
mA
mA
mA
ms
5
5
6
6
−
CMOS output product
Source current
ISOURCE
V
OUT = VDD − 0.3 V
V
DD = 0.9 V
Sink current
ISINK
tOD
VOUT = 0.3 V
VDD = 3.0 V
Output response time
−
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
Test Circuits
VDD
OUT
VSS
A
VDD
OUT
VSS
R*1
100 kΩ
R*1
100 kΩ
INP
INM
INP
S-5470
Series
S-5470
Series
INM
V
*1. Resistor (R) is unnecessary for the CMOS output product. *1. Resistor (R) is unnecessary for the CMOS output product.
Figure 5 Test Circuit 1
Figure 6 Test Circuit 2
VDD
VDD
R*1
100 kΩ
INP
INP
INM
S-5470
OUT
S-5470
OUT
Open
Series
Series
A
INM
V
VSS
VSS
A
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 7 Test Circuit 3
Figure 8 Test Circuit 4
VDD
VDD
INP
INP
S-5470
OUT
S-5470
Series
A
OUT
VSS
A
Series
INM
INM
VSS
Figure 9 Test Circuit 5
Figure 10 Test Circuit 6
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
Standard Circuits
1. Certain current level detector
R*1
100 kΩ
IINP
0.1 μF
VDD
OUT
VSS
INP
INM
S-5470
Series
VOUT
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 11
2. Current level difference detector
R*1
100 kΩ
IINP
0.1 μF
VDD
OUT
VSS
INP
S-5470
Series
IINM
VOUT
INM
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 12
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
Operation
The S-5470 Series detects either certain current level or the difference of current level.
The operation of the S-5470 Series is described below, using CMOS output and active "H" products as examples.
1. Basic operation when detecting certain current level (INM pin = VSS)
The S-5470 Series operates as follows when the INM pin is connected to VSS pin.
(1) If IINP is lower than IDET, an "L" level signal is output from the OUT pin.
(2) If IINP increases and becomes equal to or higher than IDET, an "H" level signal is output from the OUT pin (point
A in Figure 14). Even if IINP decreases and falls below IDET, as long as IINP is higher than IREL, an "H" level
signal is output from the OUT pin.
(3) If IINP then decreases further and becomes equal to or lower than IREL, an "L" level signal is output from the
OUT pin (point B in Figure 14).
Remark IINP: Current input to the INP pin
IDET: Detection current (refer to "4. 1 Detection current (IDET)")
IREL: Release current (refer to "4. 2 Release current (IREL)")
Caution 1. There are internal diodes at the INP pin and the INM pin. Therefore, in order to input a current
to the INP pin and the INM pin, an input voltage of at least the forward voltage of these diodes
is required.
2. Feed-through current (IPEAK = 100 nA) flows around the time when the OUT pin voltage switches,
as shown in Figure 14. Therefore, if the input current is fixed around this time, the current
consumption will increase.
VDD
*1
IINP
IINP
+
*1
Current
adder
−
*1
INP
Current
OUT
comparator
INM
*1
Current
amplifier
IDET
*1
VSS
*1. Parasitic diode
Figure 13 Diagram of the Operation when Detecting Certain Current Level
(1)
(2)
(3)
IDET
A
IINP
Hysteresis width
B
IREL
H
L
OUT pin output voltage
(VOUT
)
I
PEAK = 100 nA
Current consumption (IDD
)
Figure 14 Operation when Detecting Certain Current Level
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
2. Basic operation when detecting the difference of current level
(Current amplifier current amplification ratio × GINM
)
The S-5470 Series operates as follows when current (IINM) is applied to the INM pin.
(1) If IINP is lower than IDET + GINM × IINM, an "L" level signal is output from the OUT pin.
(2) If IINP increases and becomes equal to or higher than IDET + GINM × IINM, an "H" level signal is output from the
OUT pin (point A in Figure 16). Even if IINP decreases and falls below IDET + GINM × IINM, as long as IINP is
higher than IREL + GINM × IINM, an "H" level signal is output from the OUT pin.
(3) If IINP then decreases further and becomes equal to or lower than IREL + GINM × IINM, an "L" level signal is output
from the OUT pin (point B in Figure 16).
Remark IINP: Current input to the INP pin
I
I
INM: Current input to the INM pin
DET: Detection current (refer to "4. 1 Detection current (IDET)")
IREL: Release current (refer to "4. 2 Release current (IREL)")
Caution 1. There are internal diodes at the INP pin and the INM pin. Therefore, in order to input a current
to the INP pin and the INM pin, an input voltage of at least the forward voltage of these diodes
is required.
2. Feed-through current (IPEAK = 100 nA) flows around the time when the OUT pin voltage switches,
as shown in Figure 16. Therefore, if the input current is fixed around this time, the current
consumption will increase.
VDD
*1
IINP
IINP
+
*1
Current
adder
−
*1
INP
Current
OUT
IINM
IINM
comparator
*1
Current
amplifier
IDET
*1
INM
VSS
*1. Parasitic diode
Figure 15 Diagram of the Operation when Detecting the Difference of Current Level
(1)
(2)
(3)
IDET
A
Hysteresis width
IINP − GINM × IINM
B
IREL
H
L
OUT pin output voltage
(VOUT
)
I
PEAK = 100 nA
Current consumption (IDD
)
Figure 16 Operation when Detecting the Difference of Current Level
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
3. Temperature characteristics of detection current
The shaded area in Figure 17 shows the temperature characteristics of the detection voltage in the operation
temperature range.
IDET [nA]
+0.5%/°C
*1
IDET25
−0.5%/°C
−40
*1. IDET25: Detection current value at Ta = +25°C
Figure 17 Temperature Characteristics of Detection Current
+25
+85
Ta [°C]
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
4. Explanation of terms
4. 1 Detection current (IDET
)
The detection current (IDET) is the current at which the output switches to "H".
The detection current varies slightly even among products with the same specification. The variation in detection
current from the minimum detection current (IDET min.) to the maximum detection current (IDET max.) is called the
detection current range (refer to Figure 18).
Detection current
I
DET max.
Detection
current range
IDET min.
IINP
H
VOUT
L
Figure 18 Detection Current
4. 2 Release current (IREL
)
The release current (IREL) is the current at which the output switches to "L".
The release current varies slightly even among products with the same specification. The variation in release
current from the minimum release current (IREL min.) to the maximum release current (IREL max.) is called the
release current range (refer to Figure 19).
The range is calculated from the actual detection current (IDET) of a product and is in the range of IDET × 0.7 ≤
IREL ≤ IDET × 0.9.
IINP
Release current
IREL max.
Release
current range
IREL min.
H
VOUT
L
Figure 19 Release Current
4. 3 Hysteresis width
The hysteresis width is the current difference between the detection current and the release current (current at
point B − current at point A in "Figure 14 Operation when Detecting Certain Current Level" and "Figure 16
Operation when Detecting the Difference of Current Level").
The hysteresis width between the detection current and the release current prevents malfunction caused by
noise in the input current.
12
ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
Application Circuits
1. Certain photocurrent level detector
If PD or LED exceeds a certain value, the output signal inverts.
0.1 μF
VDD
OUT
VSS
INP
S-5470
VOUT
Series
INM
D1
Figure 20 Example Certain Photocurrent Level Detector (CMOS Output Product)
R
0.1 μF
VDD
OUT
VSS
100 kΩ
INP
INM
S-5470
Series
VOUT
D1
Figure 21 Example Certain Photocurrent Level Detector (Nch Open-drain Output Product)
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
13
ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
2. Photocurrent level difference detector
If the difference in the photocurrent generated by the two PDs or the two LEDs exceeds a certain value, the output
signal inverts.
0.1 μF
VDD
INP
S-5470
OUT
VSS
VOUT
Series
INM
D1
D2
Figure 22 Example Photocurrent Level Difference Detector (CMOS Output Product)
R
0.1 μF
VDD
OUT
VSS
100 kΩ
INP
INM
S-5470
Series
VOUT
D1
D2
Figure 23 Example Photocurrent Level Difference Detector (Nch Open-drain Output Product)
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
14
ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
3. Selection of PD or LED
Use PD or LED whose generation voltage is 1.0 V or more under usable light quantity.
Moreover, as for the test circuit shown in Figure 24, select PD or LED that satisfies the conditions below with
detection or measurement of the quantity of light incidence in usage environment.
• Certain photocurrent level detector
IDET ≤ I
• Photocurrent level difference detector
1 nA ≤ I ≤ 20 μA
I
Light incidence
A
D1, D2
1 V
Figure 24
Caution 1. Select PD or LED after thorough evaluation with actual application. SII Semiconductor Corporation
shall not take responsibility for operation and characteristics of PD or LED.
2. As for the circuit of detecting photocurrent difference, shown in Figure 22 and Figure 23, use
the two PDs or the two LEDs that have the same characteristics in generation voltage and in
generation current, respectively.
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
Precautions
• Use the S-5470 Series with the output current of 20 mA or less.
• The S-5470 Series may malfunction if the power supply voltage changes suddenly.
• As for the detecting circuit of the photocurrent difference (Refer to "Figure 22, Figure 23 Example Photocurrent
Level Difference Detector"), use the S-5470 Series when input current of INP pin is 20 μA or less and input
current of INM pin is 10 μA or less. In case of input current excess, note that the S-5470 Series might malfunction.
• The output in the S-5470 Series is unstable in lower voltage than the minimum operation voltage. At the time of
power-on, use the S-5470 Series after output stabilization.
• Set a capacitor of 0.1 μF or more between the VDD pin and VSS pin for stabilization.
• Since INP pin and INM pin is easy to be affected by disturbance noise, perform countermeasures such as
mounting external parts to ICs as close as possible.
• If power impedance is high, the S-5470 Series may malfunction due to voltage drop caused by feed-through
current. Set wire patterns carefully for lower power impedance.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII Semiconductor Corporation claims no responsibility for any disputes arising out of or in connection with any
infringement by products including this IC of patents owned by a third party.
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
Characteristics (Typical Data)
1. Detection current vs. Temperature
2. Detection current vs. Power supply voltage
VDD = 3.0 V
Ta = +25°C
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
−40 −25
0
25
50
75 85
0
1
2
3
4
5
6
Ta [°C]
VDD [V]
3. Release current vs. Temperature
VDD = 3.0 V
4. Release current vs. Power supply voltage
Ta = +25°C
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
−40 −25
0
25
50
75 85
0
1
2
3
4
5
6
Ta [°C]
VDD [V]
5. Current consumption vs. Temperature
VDD = 3.0 V
3.0
V
INP = 1 V
2.0
1.0
0
VINP = 0 V
−40 −25
0
25
50
75 85
Ta [°C]
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
6. Current consumption vs. Power supply
S-5470A21I
Ta = +25°C
S-5470B21I
Ta = +25°C
0.06
0.06
0.05
0.04
0.03
0.02
0.01
0.05
0.04
0.03
0.02
0.01
VINP = 1 V
VINP = 0 V
V
INP = 1 V
VINP = 0 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
VDD [V]
VDD [V]
S-5470C21I
Ta = +25°C
S-5470D21I
Ta = +25°C
0.06
0.06
V
INP = 1 V
0.05
0.04
0.03
0.02
0.01
0.05
0.04
0.03
0.02
0.01
V
INP = 0 V
VINP = 0 V
V
INP = 1 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
DD [V]
VDD [V]
7. Current amplifier current amplication ratio vs.
Temperature
VDD = 3.0 V
2.4
2.2
2.0
1.8
1.6
−40 −25
0
25
50
75 85
Ta [°C]
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
Rev.1.3_01
S-5470 Series
8. Output response time vs. Power supply voltage
S-5470A21I
Ta = +25°C
S-5470B21I
Ta = +25°C
1.25
1.25
VINP = 1 V → 0 V
VINP = 0 V → 1 V
1.00
0.75
0.50
0.25
1.00
0.75
0.50
0.25
V
INP = 0 V → 1 V
VINP = 1 V → 0 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
VDD [V]
VDD [V]
S-5470C21I
Ta = +25°C
S-5470D21I
Ta = +25°C
1.25
1.25
1.00
0.75
0.50
0.25
1.00
0.75
0.50
0.25
V
INP = 0 V → 1 V
V
INP = 1 V → 0 V
VINP = 1 V → 0 V
V
INP = 0 V → 1 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
DD [V]
VDD [V]
9. Source current vs. Power supply voltage
10. Sink current vs. Power supply voltage
10
20
Ta = +25°C
8
6
4
2
0
15
10
5
Ta = −40°C
Ta = +25°C
Ta = −40°C
Ta = +85°C
Ta = +85°C
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VDD [V]
VDD [V]
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ULTRA-LOW CURRENT CONSUMPTION NORMALLY-OFF FAINT SIGNAL DETECTION IC
S-5470 Series
Rev.1.3_01
Marking Specification
1. SOT-23-5
Top view
(1) to (3):
(4):
Product code (Refer to Product name vs. Product code)
Lot number
5
4
(1) (2) (3) (4)
1
2
3
Product name vs. Product code
Product Code
Product Name
(1)
(2)
(3)
A
I
S-5470A21I-M5T1U
S-5470B21I-M5T1U
S-5470C21I-M5T1U
S-5470D21I-M5T1U
Y
H
Y
H
Y
H
Q
Y
Y
H
20
2.9±0.2
1.9±0.2
4
5
+0.1
-0.06
1
2
3
0.16
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.3
TITLE
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.3
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
4.0±0.1(10 pitches:40.0±0.2)
+0.1
-0
2.0±0.05
0.25±0.1
ø1.5
+0.2
-0
4.0±0.1
ø1.0
1.4±0.2
3.2±0.2
3
4
2 1
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
MP005-A-C-SD-2.1
No.
ANGLE
UNIT
mm
SII Semiconductor Corporation
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
TITLE
SOT235-A-Reel
MP005-A-R-SD-1.1
No.
ANGLE
UNIT
QTY.
3,000
mm
SII Semiconductor Corporation
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
SII Semiconductor Corporation is not responsible for damages caused by the reasons other than the products or
infringement of third-party intellectual property rights and any other rights due to the use of the information described
herein.
3. SII Semiconductor Corporation is not responsible for damages caused by the incorrect information described herein.
4. Take care to use the products described herein within their specified ranges. Pay special attention to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
SII Semiconductor Corporation is not responsible for damages caused by failures and/or accidents, etc. that occur
due to the use of products outside their specified ranges.
5. When using the products described herein, confirm their applications, and the laws and regulations of the region or
country where they are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products described herein, comply with the Foreign Exchange and Foreign Trade Act and all
other export-related laws, and follow the required procedures.
7. The products described herein must not be used or provided (exported) for the purposes of the development of
weapons of mass destruction or military use. SII Semiconductor Corporation is not responsible for any provision
(export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons,
missiles, or other military use.
8. The products described herein are not designed to be used as part of any device or equipment that may affect the
human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems,
combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment,
aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle
use or other uses. Do not use those products without the prior written permission of SII Semiconductor Corporation.
Especially, the products described herein cannot be used for life support devices, devices implanted in the human
body and devices that directly affect human life, etc.
Prior consultation with our sales office is required when considering the above uses.
SII Semiconductor Corporation is not responsible for damages caused by unauthorized or unspecified use of our
products.
9. Semiconductor products may fail or malfunction with some probability.
The user of these products should therefore take responsibility to give thorough consideration to safety design
including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing
injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction.
The entire system must be sufficiently evaluated and applied on customer's own responsibility.
10. The products described herein are not designed to be radiation-proof. The necessary radiation measures should be
taken in the product design by the customer depending on the intended use.
11. The products described herein do not affect human health under normal use. However, they contain chemical
substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips
may be sharp. Take care when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products described herein, comply with the laws and ordinances of the country or region where
they are used.
13. The information described herein contains copyright information and know-how of SII Semiconductor Corporation.
The information described herein does not convey any license under any intellectual property rights or any other
rights belonging to SII Semiconductor Corporation or a third party. Reproduction or copying of the information
described herein for the purpose of disclosing it to a third-party without the express permission of SII Semiconductor
Corporation is strictly prohibited.
14. For more details on the information described herein, contact our sales office.
1.0-2016.01
www.sii-ic.com
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