BY251G [SHUNYE]

GLASS PASSIVATED SILICON RECTIFIER; 玻璃钝化硅整流


型号：	BY251G
厂家：	Shunye Enterprise
描述：	GLASS PASSIVATED SILICON RECTIFIER 玻璃钝化硅整流
文件：	总2页 (文件大小：964K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BY251G THRU BY255G

GLASS PASSIVATED SILICON RECTIFIER

Reverse Voltage - 200 to 1300 Volts Forward Current - 3.0 Ampere

FEATURES

DO-201AD

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

1.0 (25.4)

MIN.

molded plastic technique

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

0.220 (5.6)

0.197(5.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.375(9.5)

0.285(7.2)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.052 (1.3)

0.048 (1.2)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

BY251G BY252G BY253G BY254G BY255G

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

200

140

200

400

280

400

600

420

600

800

560

800

1300

910

V^RRM

V^RMS

V^DC

1300

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I^(AV)

3.0

Amps

I^FSM

150

1.1

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

at rated DC blocking voltage

T^A=25 C

10.0

500

TA=100 C

Typical junction capacitance (NOTE 1)

C^J

RθJA

C/W

30.0

20.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

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RATINGS AND CHARACTERISTIC CURVES BY251G THRU BY255G

FIG. 1- FORWARD CURRENT DERATING CURVE

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

150

125

100

3.0

2.4

1.8

1.2

0.6

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

100

125

150

175

100

AMBIENT TEMPERATURE, C

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

1,000

100

TJ=150 C

TJ=100 C

0.1

T^J=25 C

PULSE WIDTH=300 µs

1%DUTY CYCLE

0.1

0.01

TJ=25 C

0.6

0.8

1.0

1.2

1.4

1.5

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF PEAK REVERSE VOLTAGE,%

FIG. 5-TYPICAL JUNCTION CAPACITANCE

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

200

100

T^J=25 C

0.1

0.01

0.1

100

0.1

1.0

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

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