K2564 [SHINDENGEN]
VX-2 Series Power MOSFET(600V 8A); VX - 2系列功率MOSFET （ 600V 8A ）
| 型号： | K2564 |
| 厂家： | 
SHINDENGEN ELECTRIC MFG.CO.LTD |
| 描述： | VX-2 Series Power MOSFET(600V 8A) |
| 文件： | 总12页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
OUTLINE DIMENSIONS
2SK2564
(F8F60VX2)
ase:FTO-220
(Unit : mm)
600V 8A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
●Switching power supply of
AC 100-200V input
●Inverter
●Power Factor Control Circuit
RATINGS
●Absolute Maximum Ratings （Tc = 25℃）
Item
Symbol
Tstg
Conditions
Ratings Unit
-55～150 ℃
150
StorageTemperature
ch
ChannelTemperature
T
DSS
Drain-SourceVoltage
V
V
600
±30
8
24
8
50
8
2
0.5
V
GSS
D
Gate-SourceVoltage
ContinuousDrainCurrent（DC）
ContinuousDrainCurrent（Peak)
ContinuousSourceCurrent（DC）
TotalPowerDissipation
SinglePulseAvalancheCurrent
DielectricStrength
I
DP
I
S
I
A
T
P
W
A
kV
AS
ch
I
T =25℃
Terminalstocase, AC 1minute
TOR （Recommendedtorque: 0.3N･m ）
dis
V
MountingTorque
N・m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
VX-2 Series Power MOSFET
2SK2564 ( F8F60VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
600
V
μA
IDSS
IGSS
gfs
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 4A, VDS = 10V
250
±0.1
2.4
2.5
5.5
0.9
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 4A, VGS = 10V
1.2
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forwade Voltage
Theｒmal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
IS = 4A, VGS = 0V
θjc junction to case
2.5 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID = 8A
42
1130
85
245
55
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 4A, RL = 37.5Ω, VGS = 10V
pF
80
ns
Turn-Off Time
toff
195 290
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2564
Transfer Characteristics
24
20
16
12
8
Tc = - 55°C
25°C
100°C
150°C
4
V
DS
= 25V
pulse test
TYP
0
0
5
10
15
20
Gate-Source Voltage VGS [V]
2SK2564 Static Drain-Source On-state Resistance
10
I = 4A
D
1
V
GS
= 10V
pulse test
TYP
0.1
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2564
Gate Threshold Voltage
6
5
4
3
2
1
0
V
= 10V
DS
I = 1mA
D
TYP
-50
0
50
100
150
Case Temperature Tc [°C]
2SK2564
Safe Operating Area
100
10
100ms
200ms
R
1
DS(ON)
1ms
limit
10ms
0.1
DC
Tc = 25°C
Single Pulse
0.01
1
10
100
1000
Drain-Source Voltage VDS [V]
C ° / W ] j c q ( t ) [
T r a n s i e n t T h e r m a l I m p e d
2SK2564 Single Avalanche Energy Derating
100
80
60
40
20
0
0
50
100
150
Starting Channel Temperature Tch [°C]
2SK2564
Capacitance
10000
1000
100
Ciss
Coss
Crss
f=1MHz
Tc=25°C
TYP
10
0
20
40
60
80
100
Drain-Source Voltage VDS [V]
A S
[ A ]
S i n g l e A v a l a n c h e C u r r e n t I
2SK2564
Power Derating
100
80
60
40
20
0
0
50
100
150
Case Temperature Tc [°C]
2SK2564
Gate Charge Characteristics
500
400
300
200
100
0
20
15
10
5
V
DS
V
GS
V
DD
= 400V
200V
100V
I = 8A
TYP
D
0
0
20
40
60
80
100
Gate Charge Qg [nC]
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