DF30SC3ML [SHINDENGEN]

Schottky Rectifiers (SBD) (30V 30A); 肖特基二极管( SBD ) ( 30V 30A )
DF30SC3ML
型号: DF30SC3ML
厂家: SHINDENGEN ELECTRIC MFG.CO.LTD    SHINDENGEN ELECTRIC MFG.CO.LTD
描述:

Schottky Rectifiers (SBD) (30V 30A)
肖特基二极管( SBD ) ( 30V 30A )

肖特基二极管
文件: 总10页 (文件大小:409K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHINDENGEN  
Schottky Rectifiers (SBD)  
Dual  
OUTLINE DIMENSIONS  
Case : STO-220  
DF30SC3ML  
Unit : mm  
30V 30A  
FEATURES  
SMT  
Tj150℃  
Low V =0.45V  
F
PRRSM avalanche guaranteed  
High current capacity with Small Package  
APPLICATION  
Switching power supply  
DC/DC converter  
Home Appliances, Office Equipment  
Telecommunication  
RATINGS  
AbsoluteMaximum Ratings (IfnotspecifiedTc=25℃)  
Item  
Symbol  
Conditions  
Ratings Unit  
-55~150 ℃  
Storage Temperature  
Operating Junction Temperature  
M aximum Reverse Voltage  
Tstg  
Tj  
VRM  
VRRSM  
IO  
150  
30  
V
Repetitive Peak Surge Reverse Voltage  
Average Rectified Forward Current  
Peak Surge Forward Current  
Pulse width 0.5ms, duty 1/40  
35  
30  
V
A
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=119℃  
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃  
Pulse width 10μs, Rating of per diode, Tj=25℃  
IFSM  
350  
1000  
A
W
Repetitive Peak Surge Reverse Power  
PRRSM  
●Electrical Characteristics (If not specified Tc=25℃)  
Item  
Symbol  
VF  
Conditions  
IF=12.5A, Pulse measurement, Rating of per diode  
Ratings Unit  
Max.0.45  
M ax.10 mA  
Typ.820 pF  
M ax.1.6 /W  
ForwardVoltage  
Reverse Current  
V
IR  
Cj  
VR=VRM,  
Pulse measurement, Rating of per diode  
f=1MHz, VR=10V, Rating of per diode  
junction to case  
Junction Capacitance  
Thermal Resistance  
θjc  
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd  
DF30SC3ML  
Forward Voltage  
10  
Tc=125°C [MAX]  
Tc=125°C [TYP]  
Tc=25°C [MAX]  
Tc=25°C [TYP]  
1
Pulse measurement per diode  
0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
Forward Voltage VF [V]  
J u n c t i o n C a p a c i t a n c e C j [ p F ]  
DF30SC3ML  
Reverse Current  
1000  
100  
10  
Tc=125°C [MAX]  
Tc=125°C [TYP]  
Tc=100°C [TYP]  
Tc=75°C [TYP]  
Tc=50°C [TYP]  
1
0.1  
Pulse measurement per diode  
0.01  
0
5
10  
15  
20  
25  
30  
Reverse Voltage VR [V]  
DF30SC3ML  
Reverse Power Dissipation  
16  
14  
12  
10  
8
DC  
D=0.05  
0.1  
0.2  
0.3  
0.5  
6
4
SIN  
0.8  
2
0
0
5
10  
15  
20  
25  
30  
Reverse Voltage VR [V]  
0
Tj = Tjmax  
V
R
t
p
D=t /T  
p
T
DF30SC3ML  
Forward Power Dissipation  
25  
20  
15  
10  
5
DC  
D=0.8  
0.5  
SIN  
0.3  
0.2  
0.1  
0.05  
0
0
10  
20  
30  
40  
50  
Average Rectified Forward Current IO [A]  
Tj = Tjmax  
I
O
0
t
p
D=t /T  
p
T
DF30SC3ML  
Derating Curve  
50  
40  
30  
20  
10  
0
DC  
D=0.8  
0.5  
SIN  
0.3  
0.2  
0.1  
0.05  
0
20  
40  
60  
80  
100 120 140 160  
Case Temperature Tc [°C]  
V = V /2  
R
RM  
I
O
0
0
V
R
t
p
D=t /T  
p
T
DF30SC3ML Peak Surge Forward Capability  
700  
600  
500  
400  
300  
200  
100  
0
10ms 10ms  
1 cycle  
non-repetitive,  
sine wave,  
Tj=25°C before  
surge current is applied  
1
10  
100  
2
5
20  
50  
Number of Cycles [cycles]  
SBD Repetitive Surge Reverse Power Derating Curve  
120  
100  
80  
60  
40  
20  
0
0
50  
100  
150  
Junction Temperature Tj [°C]  
I
RP  
V
R
I
R
V
RP  
0.5I  
RP  
0
t
p
P
RRSM  
= I ´ V  
RP RP  
SBD  
Repetitive Surge Reverse Power Capability  
10  
1
0.1  
1
10  
100  
Pulse Width tp [ms]  
I
RP  
V
R
I
R
V
RP  
0.5I  
RP  
0
t
p
P
RRSM  
= I ´ V  
RP RP  

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