SUD06N10-225L
更新时间：2024-09-18 12:33:17
品牌：FREESCALE
描述：Automotive N-Channel 100 V (D-S) 175 °C MOSFET
概述
数据手册SUD06N10-225L 概述
Automotive N-Channel 100 V (D-S) 175 °C MOSFET 汽车N沟道100伏（D -S ）， 175 ℃的MOSFET
SUD06N10-225L 数据手册
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PDF下载SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
0.200 @ V = 10 V
6.5
6.0
GS
100
2.7
0.225 @ V = 4.5 V
GS
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number: SUD06N10-225L
SUD06N10-225L—E3 (lLead (Pb)-Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
100
" 20
6.5
DS
GS
V
V
T
= 25_C
= 125_C
C
b
Continuous Drain Current (T = 175_C)
I
D
J
T
3.75
8.0
C
Pulsed Drain Current
I
A
DM
Continuous Source Current (Diode Conduction)
Avalanche Current
I
6.5
S
I
5.0
AR
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
E
AR
1.25
mJ
b
T
= 25_C
= 25_C
20
C
Maximum Power Dissipation
P
D
W
a
T
1.5
A
Operating Junction and Storage Temperature Range
T , T
−55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
40
80
50
100
7.5
a
Junction-to-Ambient
R
R
thJA
Steady State
_C/W
Junction-to-Case
6.0
thJC
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
100
1.0
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
3.0
"100
1
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
nA
GSS
V
DS
= 100 V, V = 0 V
GS
V
V
= 100 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 100 V, V = 0 V, T = 175_C
250
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
8.0
A
D(on)
GS
V
= 10 V, I = 3 A
0.160
0.200
0.350
0.450
0.225
GS
D
V
= 10 V, I = 3 A, T = 125_C
GS
D
J
b
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 10 V, I = 3 A, T = 175_C
D
J
V
GS
= 4.5 V, I = 1.0 A
0.180
8.5
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 3 A
S
DS
D
Dynamica
Input Capacitance
C
C
240
42
17
2.7
0.6
0.7
7
iss
V
V
= 0 V, V = 25 V, F = 1 MHz
DS
Output Capacitance
pF
nC
GS
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
4.0
g
c
Gate-Source Charge
Q
Q
= 50 V, V = 5 V, I = 6.5 A
gs
gd
DS
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
11
12
12
14
d(on)
c
Rise Time
t
8
r
V
= 50 V, R = 7.5 W
L
GEN g
DD
ns
c
I
D
^ 6.5 A, V
= 10 V, R = 2.5 W
Turn-Off Delay Time
t
8
d(off)
c
Fall Time
t
9
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
8.0
1.3
60
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 6.5 A, V = 0 V
0.9
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 6.5 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
15
15
T
= −55_C
C
V
= 10 thru 5 V
GS
25_C
12
9
12
9
4 V
125_C
6
6
3
3
3, 2 V
8
0
0
0
2
4
6
10
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
15
12
9
0.30
0.25
0.20
0.15
0.10
0.05
0.00
T
= −55_C
C
V
GS
= 4.5 V
25_C
V
GS
= 10 V
125_C
6
3
0
0
3
6
9
12
15
0
3
6
9
12
15
I
D
− Drain Current (A)
I
D
− Drain Current (A)
Capacitance
Gate Charge
350
300
250
200
150
100
50
10
8
V
D
= 50 V
DS
I
= 6.5 A
C
iss
6
4
2
C
oss
C
rss
0
0
0
20
40
60
80
100
0
1
2
3
4
5
V
DS
− Drain-to-Source Voltage (V)
Q − Total Gate Charge (nC)
g
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistancevs. Junction Temperature
2.5
10
V
D
= 10 V
GS
I
= 3 A
2.0
1.5
1.0
0.5
0.0
T = 175_C
J
T = 25_C
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
−50 −25
0
25
50
75 100 125 150 175
T
− Junction Temperature (_C)
V
SD
− Source-to-Drain Voltage (V)
J
THERMAL RATINGS
Maximum Avalanche Drain Current vs. Case Temperature
Safe Operating Area
8
10
10 ms
*Limited by r
DS(on)
6
4
2
0
100 ms
1
1 ms
10 ms
T
= 25_C
C
Single Pulse
100 ms
1 s, dc
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
− Drain-to-Source Voltage (V)
*V u minimum V at which r is specified
DS(on)
T
− Case Temperature (_C)
C
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−5
−4
−3
−2
−1
10
10
10
10
10
1
10
100
Square Wave Pulse Duration (sec)
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SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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SUD06N10-225L 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| SUD06N10-225L-E3 | VISHAY | N-Channel 100-V (D-S) 175C MOSFET | 获取价格 |
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| SUD06N10-225L-GE3 | VISHAY | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | 获取价格 |
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| SUD06N10-225L_06 | VISHAY | N-Channel 100-V (D-S) 175Celsius MOSFET | 获取价格 |
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| SUD06N10-225L_08 | VISHAY | N-Channel 100-V (D-S) 175C MOSFET | 获取价格 |
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| SUD08P06-155L | FREESCALE | P-Channel 60 V (D-S) 175 °C MOSFET | 获取价格 |
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| SUD08P06-155L-E3 | VISHAY | P-Channel 60-V (D-S), 175 °C MOSFET | 获取价格 |
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| SUD08P06-155L-GE3 | VISHAY | P-Channel 60 V (D-S) MOSFET | 获取价格 |
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| SUD08P06-155L_08 | VISHAY | P-Channel 60-V (D-S), 175 °C MOSFET | 获取价格 |
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| SUD09P10-195 | FREESCALE | P-Channel 100 V (D-S) MOSFET | 获取价格 |
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