AOB14N50 [FREESCALE]
500V, 14A N-Channel MOSFET; 500V ， 14A N沟道MOSFET
| 型号： | AOB14N50 |
| 厂家： | 
Freescale |
| 描述： | 500V, 14A N-Channel MOSFET |
| 文件： | 总6页 (文件大小：444K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
General Description
The AOT14N50 &AOB14N50 & AOTF14N50 have been
fabricated using an advanced high voltage MOSFET
performance and robustness in popular AC-DC
process that is designed to deliver high levels of
applications.By providing low R
DS(on), C
iss and Crss along
with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
Features
VDS
600V@150℃
14A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 0.38Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT14N50/AOB14N50
AOTF14N50
Units
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
A
TC=25°C
14
11
56
6
14*
11*
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
TC=100°C
IDM
IAR
A
Repetitive avalanche energy C
EAR
EAS
dv/dt
540
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
1080
mJ
V/ns
W
W/ oC
5
278
50
PD
Power Dissipation B
Derate above 25oC
2.2
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
°C
300
°C
Parameter
Symbol
RθJA
AOT14N50/AOB14N50
AOTF14N50
Units
Maximum Junction-to-Ambient A,D
65
65
°C/W
Maximum Case-to-sink A
RθCS
0.5
--
°C/W
°C/W
Maximum Junction-to-Case
RθJC
0.45
2.5
* Drain current limited by maximum junction temperature.
1/6
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AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250ꢀA, VGS=0V, TJ=25°C
ID=250ꢀA, VGS=0V, TJ=150°C
500
BVDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
600
0.5
V
BVDSS
/∆TJ
V/ oC
ID=250ꢀA, VGS=0V
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
1
IDSS
µA
10
IGSS
VGS(th)
RDS(ON)
gFS
VDS=0V, VGS=±30V
Gate-Body leakage current
Gate Threshold Voltage
±100
4.5
nΑ
V
VDS=5V ID=250µA
VGS=10V, ID=7A
VDS=40V, ID=7A
IS=1A,VGS=0V
3.3
4.2
0.29
20
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
0.38
Ω
S
VSD
0.71
1
V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
14
56
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1531 1914 2297
pF
pF
pF
Ω
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
153
11
191
16
229
20
1.75
3.5
5.3
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
42.8
9.3
20.3
44
51
11
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=14A
Gate Source Charge
Gate Drain Charge
24
Turn-On DelayTime
53
VGS=10V, VDS=250V, ID=14A,
Turn-On Rise Time
84
101
110
60
RG=25Ω
tD(off)
tf
Turn-Off DelayTime
92
Turn-Off Fall Time
50
trr
IF=14A,dI/dt=100A/µs,VDS=100V
IF=14A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
289
4.93
347
6
ns
Qrr
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=6A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
100
10
1
10V
-55°C
VDS=40V
125°C
6.5V
6V
VGS=5.5V
25°C
0
0.1
0
5
10
15
VDS (Volts)
20
25
30
2
4
6
8
10
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
0.5
3
0.5
0.4
0.4
0.3
0.3
0.2
2.5
2
VGS=10V
ID=7A
VGS=10V
1.5
1
0.5
0
0
5
10
15
20
25
30
-100
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
1.0E+02
1.0E+01
1.0E+00
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.9
0.8
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
-100
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
3/6
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AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
10
VDS=400V
ID=14A
Ciss
Coss
Crss
6
3
0
1
0
10
20
30
40
50
60
0.1
1
10
100
V
DS (Volts)
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100
100
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
10
1
100µs
100µs
1ms
1ms
10ms
0.1s
DC
10ms
0.1s
1s
DC
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
0.1
0.01
0.1
0.01
10s
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT14N50/AOB14N50
(Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF14N50 (Note F)
18
15
12
9
6
3
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
4/6
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AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.45°C/W
1
0.1
PD
Ton
T
0.01
0.001
Single Pulse
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT14N50/AOB14N50 (Note F)
0.1
1
10
100
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
0.1
PD
0.01
0.001
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.01
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF14N50 (Note F)
0.1
1
10
100
5/6
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AOT14N50/AOB14N50/AOTF14N50
500V, 14A N-Channel MOSFET
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr=- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
6/6
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