PC3Q711NIP [SHARP]
Low Input Current Type Photocoupler; 低输入电流型光电耦合器
| 型号： | PC3Q711NIP |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Low Input Current Type Photocoupler |
| 文件： | 总5页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PC3H71X NIP Series/PC3Q71X NIP Series
Low Input Current Type
Photocoupler
PC3H71X NIP Series
PC3Q71X NIP Series
■ Outline Dimensions
■ Features
(Unit : mm)
1. Low input current type(IF=0.5mA)
2. High resistance to noise due to high common rejection
voltage (CMR:MIN. 10kV/µs)
PC3H71xNIP Series
Internal connection
diagram
Anode mark
4
1
3
1
2
4
3
1
2
3
4
Anode
3. Mini-flat package
Cathode
Emitter
Collector
H 7 1
4.4±0.2
4. Isolation voltage (Viso:2.5kVrms)
5. Recognized by UL, file No. E64380
2
■ Applications
5.3±0.3
Epoxy resin
1. Programmable controllers
2. Facsimiles
3. Telephones
+0.4
0.5
−0.2
+0.2
7.0
−0.7
■ Rank Table
Model No.
Rank mark
Ic (mA)
0.5 to 3.5
0.7 to 1.75
1.0 to 2.5
0.7 to 2.5
Conditions
PC3Q71xNIP Series
PC3H710NIP A, B or no mark
10.3±0.3
Internal connection
diagram
IF=0.5mA
VCE=5V
Ta=25°C
A
PC3H711NIP
1.27±0.25
16 15 14 13 12 11 10
9
B
PC3H712NIP
PC3H715NIP
16
9
A or B
Model No.
Rank mark
Ic (mA)
0.5 to 3.0
1.0 to 2.5
Conditions
P C 3 Q 7 1
IF=0.5mA
VCE=5V
Ta=25°C
1
2
3
4
5
6 7
8
PC3Q710NIP A or no mark
A
PC3Q711NIP
1
2
9
3
5
6
7
Anode
4
8
Cathode
Emitter
11 13 15
0.4±0.1
8
1
■ Absolute Maximum Ratings
(Ta=25°C)
10 12 14 16
Collector
Primary side mark
Parameter
Symbol
Rating
Unit
mA
mA
C0.4
(Input side)
IF
10
Forward current
*1 Peak forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*2 Isolation voltage
Epoxy resin
200
6
IFM
5.3±0.3
Input
VR
V
mW
P
15
+0.4
VCEO
VECO
IC
V
70
0.5
−0.2
+0.2
7.0
−0.7
V
6
Output
50
mA
mW
mW
PC
150
170
Ptot
Topr
Tstg
Viso
Tsol
−30 to +100
−40 to +125
°C
°C
kVrms
°C
2.5
260
*3
Soldering temperature
*1 Pulse width<=100µs, Duty ratio=0.001
*2 40 to 60%RH, AC for 1 minute, f=60Hz
*3 For 10s
0.2mm or more
Soldering area
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/
PC3H71X NIP Series/PC3Q71X NIP Series
■ Electro-optical Characteristics
(Ta=25°C)
Parameter
Symbol
Conditions
IF=10mA
VR=4V
MIN.
TYP.
1.2
−
MAX.
1.4
10
Unit
V
µA
pF
Forward voltage
Reverse current
VF
−
−
−
−
IR
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Ct
250
100
−
30
−
V=0, f=1kHz
VCE=50V, IF=0
IC=0.1mA, IF=0
IE=10µA, IF=0
ICEO
nA
V
−
−
BVCEO
BVECO
70
6
−
V
3.5
3.0
0.2
−
PC3H71XNIP Series
Collector
current
IC
mA
IF=0.5mA, VCE=5V
0.5
−
−
PC3Q71XNIP Series
Collector-emitter saturation voltage
Isolation resistance
−
V
Ω
pF
µs
µs
IF=10mA, IC=1mA
DC500V 40 to 60%RH
V=0, f=1MHz
VCE (sat)
RISO
Cf
5×1010
1×1011
−
−
−
Floating capacitance
1.0
18
18
0.6
4
tr
Rise time
Response time
VCE=2V, IC=2mA, RL=100Ω
Fall time
tf
3
Ta=25°C, RL=470Ω, VCM=1.5kV (peak),
IF=0mA, VCC=9V, Vnp=100mV
*1
−
kV/µs
−
Common mode rejection voltage
CMR
10
*1 Refer to Fig.1.
Fig.1 Test Circuit for Common Mode Rejection Voltage
(dV/dt)
VCM
1)
VCC
VCM : High wave
Vnp
Vcp
RL
Vnp
VO
(Vcp Nearly = dV/dt×Cf×RL)
pulse
RL=470Ω
CC=9V
VCM
1) Vcp : Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
V
Fig.2 Forward Current vs. Ambient
Temperature
Fig.3 Diode Power Dissipation vs. Ambient
Temperature
15
10
10
5
0
5
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PC3H71X NIP Series/PC3Q71X NIP Series
Fig.5 Total Power Dissipation vs. Ambient
Temperature
Fig.4 Collector Power Dissipation vs.
Ambient Temperature
200
200
150
100
170
150
100
50
0
50
0
−30
0
25
50
75
100
125
−30
0
25
50
75
100
125
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.6 Peak Forward Current vs. Duty Ratio
Fig.7 Forward Current vs. Forward Voltage
100
2000
1000
500
Pulse width <=100µs
Ta=25°C
10
200
100
50
Ta=25°C
Ta=100°C
Ta=0°C
Ta=75°C
Ta=50°C
1
Ta=−25°C
20
10
0.1
10−3
2
5
10−2
Duty ratio
2
5
10−1
2
5
1
0
0.5
1.0
1.5
2.0
5
Forward voltage VF (V)
Fig.8 Current Transfer Ratio vs. Forward
Fig.9 Current Transfer Ratio vs. Forward
Current
Current
PC3H71xNIP Series
PC3Q71xNIP Series
800
600
VCE=5V
VCE=5V
Ta=25°C
500
Ta=25°C
700
600
500
400
300
200
400
300
200
100
0
100
0
0.1
1
10
0.1
1
10
Forward current IF (mA)
Forward current IF (mA)
PC3H71X NIP Series/PC3Q71X NIP Series
Fig.10 Collector Current vs. Collector-emitter
Fig.11 Collector Current vs. Collector-emitter
Voltage
PC3H71xNIP Series
40
Voltage
PC3Q71xNIP Series
40
Ta=25°C
Ta=25°C
PC (MAX.)
PC (MAX.)
30
30
IF=7mA
IF=7mA
IF=5mA
IF=5mA
20
20
IF=3mA
IF=2mA
IF=3mA
IF=2mA
10
0
10
IF=1mA
IF=0.5mA
IF=1mA
IF=0.5mA
0
0
2
4
6
8
10
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
Fig.13 Relative Current Transfer Ratio vs.
Ambient Temperature
Fig.12 Relative Current Transfer Ratio vs.
Ambient Temperature
PC3Q71xNIP Series
PC3H71xNIP Series
150
150
VCE=5V
IF=0.5mA
VCE=5V
IF=0.5mA
100
100
50
0
50
0
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Fig.15 Collector Dark Current vs. Ambient
Temperature
Fig.14 Collector - emitter Saturation Voltage
vs. Ambient Temperature
0.16
10−5
IF=10mA
IC=1mA
VCE=50V
0.14
10−6
10−7
10−8
10−9
0.12
0.10
0.08
0.06
0.04
10−10
10−11
0.02
0
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
−30 −20 −10
0
10 20 30 40 50 60 70 80 90 100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
PC3H71X NIP Series/PC3Q71X NIP Series
Fig.16 Response Time vs. Load Resistance
Fig.17 Response Time vs. Load Resistance
(Saturation)
1000
1000
VCE=2V
IC=2mA
Ta=25°C
VCC=5V
IF=16mA
Ta=25°C
tf
100
100
10
tf
td
ts
10
ts
tr
td
1
1
tr
0.1
0.1
0.1
1
10
1
10
Load resistance RL (kΩ)
100
Load resistance RL (kΩ)
Fig.18 Test Circuit for Response Time
Fig.19 Voltage Gain vs Frequency
5
VCC
VCE=2V
IC=2mA
Ta=25°C
RL
RD
Input
Input
0
−5
Output
Output
RL=10kΩ
10%
90%
1kΩ
ts
tf
td
tr
−10
−15
100Ω
−20
−25
0.1
1
10
Frequency f (kHz)
100
1000
Fig.20 Collector-emitter Saturation Voltage
Fig.21 Reflow Soldering
vs. Forward Current
5
Only one time soldering is recommended within the temperature
profile shown below.
IC=7mA
Ta=25°C
IC=5mA
230°C
4
IC=3mA
200°C
180°C
IC=2mA
3
IC=1mA
IC=0.5mA
2
1
0
25°C
30s
1min
0
2
4
6
8
10
2min
1.5min
1min
Forward current IF (mA)
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