PC3Q66QJ000F [SHARP]
Transistor Output Optocoupler, 4-Element, 2500V Isolation, MINI-FLAT, 16 PIN;型号: | PC3Q66QJ000F |
厂家: | SHARP ELECTRIONIC COMPONENTS |
描述: | Transistor Output Optocoupler, 4-Element, 2500V Isolation, MINI-FLAT, 16 PIN 输出元件 光电 |
文件: | 总5页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PC3Q66Q
Mini-flat Package, High
Collector-Emitter Voltage
Type Half Pitch Photocoupler
PC3Q66Q
( )
Unit : mm
■ Features
■ Outline Dimensions
1. High collector-emitter voltage
10.3± 0.3
(
)
CEO : 80V
V
1.27± 0.25
16
(
)
2. Half pitch type lead pitch : 1.27mm
Model No.
9
3. Isolation voltage between input and output
(
)
V
iso : 2 500V rms
Primary
side
mark
4. Applicable to infrared ray reflow
(
)
230˚C for MAX. 30seconds
5. High reliability
0.4 ± 0.1
C0.4
8
1
5.3± 0.3
Epoxy resin
■ Applications
1. Programmable controllers
+ 0.4
- 0.2
0.5
+ 0.2
- 0.7
7.0
■ Package Specifications
6 ˚
Model No.
Package specifications
Internal connection diagram
1
2
9
3 5 7
Anode
( )
Taping reel diameter 330mm 1 000pcs.
PC3Q66Q
16
15
14
13
12
11
10
9
8
4
6 8
Cathode
13 15
11
Emitter
10
12
16
14
1
2
3
4
5
6
7
Collector
(
)
■ Absolute Maximum Ratings
Ta= 25˚C
Parameter
Symbol
IF
Rating
50
Unit
mA
A
Forward current
*1Peak forward current
IFM
1
Input
Reverse voltage
VR
6
V
Power dissipation
P
70
mW
V
Collector-emitter voltage
V CEO
V ECO
IC
80
Emitter-collector voltage
6
V
Output
Collector current
50
mA
mW
mW
kV rms
˚C
Collector power dissipation
Total power dissipation
*2 Isolation voltage
PC
150
170
2.5
P tot
V iso
T opr
T stg
T sol
Operating temperature
Storage temperature
*3Soldering temperature
- 30 to + 100
- 40 to+ 125
260
Soldering area
˚C
˚C
*1 Pulse width<=100µs, Duty ratio : 0.001
*2 AC for 1 min., 40 to 60% RH, f= 60Hz
*3 For 10seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PC3Q66Q
(
)
Ta= 25˚C
■Electro-optical Characteristics
Parameter
Symbol
VF
Conditions
IF = 20mA
MIN.
TYP.
MAX.
Unit
V
Forward current
-
1.2
-
1.4
10
250
100
-
Input
Reverse current
IR
VR = 4V
-
µ A
pF
nA
V
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Ct
V= 0, f= 1kH Z
-
30
-
ICEO
BVCEO
BVECO
IC
VCE = 20V, I F = 0
IC = 0.1mA, I F = 0
IE = 10 µ A, IF = 0
IF = 1mA, V CE = 5V
IF = 20mA, I C = 1mA
DC500V 40 to 60% RH
V= 0, f= 1 MH Z
VCE = 2V, I C = 2mA
RL = 100Ω
-
Output
80
-
6
-
-
V
1
-
4
mA
V
Collector-emitter saturation voltage
Isolation resistance
VCE
(
)
-
0.1
1011
0.6
6
0.2
-
sat
Transfer
charac-
teristics
RISO
Cf
5 x 1010
Ω
Floating capacitance
-
-
-
1.0
-
pF
µ s
µ s
Rise time
Fall time
tr
Response time
tf
8
-
Fig. 1 Forward Current vs.
Fig. 2 Diode Power Dissipation vs.
Ambient Temperature
Ambient Temperature
60
100
50
40
30
20
80
70
60
40
10
0
20
0
- 30
0
25
5055
75
100
125
- 30
0
5055
100
(
)
(
)
Ambient temperature T ˚C
Ambient temperature T a ˚C
a
Fig. 3 Collector Power Dissipation vs.
Fig. 4 Power Dissipation vs.
Ambient Temperature
200
Ambient Temperature
300
250
200
150
170
150
100
50
100
50
0
0
- 30
0
25
50
75
100
)
125
- 30
0
25
)
Ambient temperature T a ˚C
50
75
100
(
(
Ambient temperature T ˚C
a
PC3Q66Q
Fig. 5 Peak Forward Current vs. Duty Ratio
Fig. 6 Forward Current vs.
Forward Voltage
100
10000
Pulse width <=100µ s
5000
Ta= 25˚C
25˚C
50
2000
1000
50˚C
0˚C
20
10
5
500
200
100
- 25˚C
75˚C
50
20
2
1
10
5
- 3 2
- 2 2
- 1 2
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5
5
5
5
10
10
10
1
(
)
V
Duty ratio
Forward voltage V F
Fig. 8 Collector Current vs. Collector
-emitter Voltage
Fig. 7 Current Tranfer Ratio vs.
Forward Current
500
Ta = 25˚C
Pc (max)
V
CE = 5V
50
40
I
F = 30mA
20mA
Ta = 25˚C
400
300
200
10mA
30
20
5mA
100
0
10
0
1mA
8
1
10
100
0
2
4
6
10
(
)
( )
Collector-emitter voltage V CE V
Forward current I
mA
F
Fig. 9 Relative Current Transfer Ratio vs.
Fig.10 Collector-emitter Saturation Voltage vs.
Ambient Temperature
Ambient Temperature
150
0.16
I
F = 1mA
CE = 5V
I
I
F = 20mA
C = 1mA
0.14
0.12
0.10
0.08
0.06
0.04
V
100
50
0
0.02
0.00
- 30
0
20
40
60
80
100
- 30
0
20
40
60
80
100
(
)
(
)
Ambient temperature Ta ˚C
Ambient temperature T ˚C
a
PC3Q66Q
Fig.11 Collector Dark Current vs.
Ambient Temperature
Fig.12 Response Time vs. Load Resistance
- 5
10
1000
500
VCE = 2V
IC = 2mA
Ta = 25˚C
5
VCE = 20V
- 6
5
10
200
100
50
- 7
5
10
10
10
t f
20
10
tr
- 8
5
5
td
- 9
5
2
ts
1
- 10
5
10
10
0.5
0.2
0.1
0.01
- 11
0.1
)
Load resistance RL k Ω
1
10
- 30
0
20
40
60
80
100
(
)
(
Ambient temperature T
˚C
a
Fig.13 Collector-emitter Saturation Voltage
vs. Forward Current
Ta = 25˚C
10
I
C = 0.5mA
1mA
8
6
4
3mA
5mA
7mA
2
0
0
2
4
6
8
10
(
)
mA
Forward current I
F
Please refer to the chapter “ Precautions for Use ”
●
Application Circuits
NOTICE
●The circuit application examples in this publication are provided to explain representative applications of
SHARP devices and are not intended to guarantee any circuit design or license any intellectual property
rights. SHARP takes no responsibility for any problems related to any intellectual property right of a
third party resulting from the use of SHARP's devices.
●Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the specifications, characteristics, data, materials,
structure, and other contents described herein at any time without notice in order to improve design or
reliability. Manufacturing locations are also subject to change without notice.
●Observe the following points when using any devices in this publication. SHARP takes no responsibility
for damage caused by improper use of the devices which does not meet the conditions and absolute
maximum ratings to be used specified in the relevant specification sheet nor meet the following
conditions:
(i) The devices in this publication are designed for use in general electronic equipment designs such as:
--- Personal computers
--- Office automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii)Measures such as fail-safe function and redundant design should be taken to ensure reliability and
safety when SHARP devices are used for or in connection with equipment that requires higher
reliability such as:
--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)
--- Traffic signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii)SHARP devices shall not be used for or in connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g., scuba).
●Contact a SHARP representative in advance when intending to use SHARP devices for any "specific"
applications other than those recommended by SHARP or when it is unclear which category mentioned
above controls the intended use.
●If the SHARP devices listed in this publication fall within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Control Law of Japan, it is necessary to obtain approval to export
such SHARP devices.
●This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any
means, electronic or mechanical, for any purpose, in whole or in part, without the express written
permission of SHARP. Express written permission is also required before any use of this publication
may be made by a third party.
●Contact and consult with a SHARP representative if there are any questions about the contents of this
publication.
115
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