LH28F400BGHT-L10 [SHARP]
Flash, 256KX16, 100ns, PDSO48, TSOP-48;
| 型号： | LH28F400BGHT-L10 |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Flash, 256KX16, 100ns, PDSO48, TSOP-48 ISM频段 光电二极管 内存集成电路 |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRODUCT INFORMATION
Integrated Circuits
Group
APPLICATIONS:
Pager
Notebook PC
POS
®
Set Top Box
DVD
LH28F400BG
4M (256K × 16)
SmartVoltage
Flash Memory
FEATURES
• SmartVoltage technology
• Enhanced automated suspend options
– word write suspend to read
– block erase suspend to word write
– block erase suspend to read
• Low power management
– deep power-down mode
– automatic power savings mode
– Decreases I in static mode
CC
• Industry-standard packaging
– 48-pin TSOP
– 2.7 V, 3.3 V or 5 V V
CC
– 44-pin PSOP
– 2.7 V, 3.3 V, 5 V or 12 V V
PP
• Chip size packaging
– 48-ball CSP
• High-performance access time
– 85 ns (5 V ±025 V), 90 ns (5 V ±0.5 V),
100 ns (3.3 V ±0.3 V), 120 ns (2.7 V – 3.6 V)
– 120 ns (5 V ±0.5 V), 130 ns (3.3 V ±0.3 V),
150 ns (2.7 V – 3.6 V)
• SRAM-compatible write interface
™
• ETOX V nonvolatile flash technology
• Not designed or rated as radiation hardened
• Operating temperature
DESCRIPTION
– Commerical 0°C – +70°C
SHARP’s LH28F400BG Flash memory with SmartVoltage tech-
nology is a high-density, low-cost, nonvolatile, read/write storage
solution for a wide range of applications. LH28F400BG can operate
at V = 2.7 V and V = 2.7 V. Its low voltage operation capability
– Industrial -40°C – +85°C
• Enhanced data protection features
– Absolute protection with V = GND
PP
– Block erase/word write lockout during power transitions
CC
PP
realize battery life and suits for cellular phone application.
Its boot, parameter and main-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suit-
able for portable terminals and personal computers. Its enhanced
suspend capabilities provide for an ideal solution for code and data
storage applications. For secure code storage appli-cations, such
as networking, where code is either directly executed out of flash
or downloaded to DRAM, the LH28F400BG offers two levels of
– Boot blocks protection with WP = V
IL
• Optimized array blocking architecture
– Two 4K-word boot blocks
– Six 4K-word parameter blocks
– Seven 32K-word main blocks
– Top or bottom boot locations
• Automated word write and block erase
– Command user interface
protection: absolute protection with V at GND, selective hardware
– Status register
PP
boot block locking. These alternatives give designers ultimate
control of their code security needs.
• Extended cycling capability
– 100,000 block erase cycles
The information for this document is from the LH28F400BG-L85/12 Product Preview, Rev. 0.95.
Copyright ©1998, Sharp Electronics Corp. All rights reserved. All tradenames are the registered property of their respective owners. Specifications are subject to change without notice.
SMT98015
PRODUCT INFORMATION
®
44-PIN SOP PINOUT
48-PIN TSOP PINOUT
TOP VIEW
44-PIN SOP
48-PIN TSOP
TOP VIEW
1
2
3
44
43
42
RP
WE
A8
VPP
NC
A17
A15
1
A16
48
47
46
A14
A13
2
3
NC
GND
A7
A6
A5
A4
4
5
6
7
41 A9
A12
A11
A10
A9
4
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
DQ15
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
40
39
38
A10
A11
A12
5
6
7
A3
A2
37
36
35
34
33
32
31
30
29
28
A13
A14
A15
A16
NC
8
9
A8
8
NC
NC
WE
RP
VPP
WP
RY/BY
NC
A17
A7
9
A1 10
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A0
11
12
CE
GND
DQ15
DQ7
GND 13
OE 14
DQ0 15
DQ8 16
DQ1 17
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
DQ14
DQ6
DQ9 18
DQ2 19
DQ10 20
DQ3 21
27
26
25
24
DQ13
DQ5
DQ12
DQ4
A6
A5
DQ11 22
23
VCC
A4
A3
GND
CE
28F400BG-3
A2
A1
A0
48-BALL CSP PINOUT
28F400BG-1
48-BALL CSP
TOP VIEW
1
2
3
4
5
6
7
8
A
B
C
D
E
F
A2
A5
A17
WP
WE
A8
A11
A14
A3
A1
A0
A6
A4
NC
A7
VPP
RP
NC
A9
A10
A12
A13
A15
RY/BY NC
OE DQ1 DQ10 DQ12 DQ6 DQ15 A16
GND DQ8 DQ2 DQ11 VCC DQ5 DQ14 GND
CE
DQ0 DQ9 DQ3 DQ4 DQ13 DQ7 NC
28F400BG-2
LH28F400BG 4M (256K × 16) SmartVoltage Flash Memory
2
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