GL480Q [SHARP]
Infrared Emitting Diode; 红外发光二极管
| 型号： | GL480Q |
| 厂家： | 
SHARP ELECTRIONIC COMPONENTS |
| 描述： | Infrared Emitting Diode |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GL480/GL480Q/GL483Q
Infrared Emitting Diode
GL480/GL480Q
GL483Q
( )
Unit : mm
■ Features
■ Outline Dimensions
(
)
1. Narrow beam angle ∆θ : TYP. ± 13˚
GL480/GL480Q
Pink transparent
(
)
epoxy resin GL480
(
1.15
0.75
2- C0.5
2. Radiant flux Φ e : MIN. 0.7mW at
3.0± 0.2
Transparent
(
)
I F = 20mA
)
epoxy resin GL480Q
3. Compact, high reliability by chip coating
(
)
GL480Q/GL483Q
0.15
R0.8± 0.1
2
(
)
4. Long lead type GL483Q
1.7
1
■ Applications
1. Copiers
2.54
2.8
2- 0.4
1
2
Cathode
Anode
1.6
2. Floppy disk drives
3. Optoelectronic switches
2
1
GL483Q
2- C0.5
Transparent
epoxy resin
1.15
0.75
3.0± 0.2
2
0.15
1.6± 0.2
1.7
2- 0.6
1
2 - 0.4
2.54
1
2
Cathode
Anode
1.6
(
)
Ta= 25˚C
■ Absolute Maximum Ratings
2.8
Parameter
Power dissipation
Symbol
P
Rating
Unit
mW
mA
A
1
2
75
Forward current
IF
50
*1Peak forward current
IFM
VR
1
Reverse voltage
6
V
Operating temperature
Storage temperature
*2Soldering temperature
T opr
T stg
T sol
- 25 to + 85
- 40 to + 85
260
˚C
˚C
˚C
*1 Pulse width<=100 µ s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.4mm from the bottom face of resin package.
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GL480/GL480Q/GL483Q
(
)
Ta = 25˚C
■ Electro-optical Characteristics
Parameter
Forward voltage
Symbol
Conditions
IF = 20mA
MIN.
TYP.
1.2
3.0
-
MAX.
Unit
V
VF
V FM
IR
-
-
1.4
4.0
10
-
Peak forward voltage
Reverse current
IFM = 0.5A
VR = 3V
V
-
µ A
pF
Terminal capacitance
Response frequency
Radiant flux
Ct
VR = 0, f = 1MHz
-
-
50
fc
-
300
-
-
kHz
mW
nm
nm
˚
Φ e
λ p
∆ λ
∆ θ
IF = 20mA
IF = 5mA
IF = 5mA
IF = 20mA
0.7
-
3.0
-
Peak emission wavelength
Half intensity wavelength
Half intensity angle
950
45
-
-
-
± 13
-
Fig. 1 Forward Current vs.
Fig. 2 Peak Forward Current vs.
Ambient Temperature
60
Duty Ratio
10000
Pulse width <=100 µ s
Ta = 25˚C
5000
50
40
30
20
10
0
2000
1000
500
200
100
50
20
10
- 3
- 2
- 1
2
2
5
2
5
5
10
10
10
1
- 25
0
25
50
75 85 100
(
)
Ambient temperature Ta ˚C
Duty ratio
Fig. 3 Spectral Distribution
Fig. 4 Peak Emission Wavelength vs.
Ambient Temperature
1000
100
IF = const.
IF = 5mA
T a= 25˚C
80
60
40
20
0
975
950
925
900
880
900
920
940
960
980
1000 1020 1040
- 25
0
25
50
75
100
(
)
Wavelength λ nm
(
)
Ambient temperature Ta ˚C
GL480/GL480Q/GL483Q
Fig. 5 Forward Current vs. Forward Voltage
Fig. 6 Relative Radiant Flux vs.
Ambient Temperature
500
20
IF
const.
=
T
a = 75˚C
50˚C
200
100
50
25˚C
0˚C
10
5
- 20˚C
2
1
20
10
0.5
5
2
1
0.2
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
- 25
0
25
50
75
)
100
(
)
V
(
Forward voltage VF
Ambient temperature Ta ˚C
Fig. 7 Radiant Flux vs. Forward Current
Fig. 8 Relative Radiant Intensity vs.
Distance
100
10
Ta = 25˚C
T a = 25˚C
5
2
1
10
1
Pulse
Pulse width
<=100 µ s
(
0.5
)
DC
0.2
0.1
0.05
0.02
0.01
0.1
1
10
100
1000
0.1
1
10
100
(
)
(
)
Forward current IF mA
Distance to detector d mm
(
)
Fig. 9 Relative Collector Current vs. Distance
Fig.10 Radiation Diagram
GL480Q/GL483Q
(
)
Detector : PT480
(
+ 20˚
)
Ta= 25˚C
0
- 20˚
- 10˚
+ 10˚
100
IF = 20mA
T a = 25˚C
100
- 30˚
- 40˚
+ 30˚
80
10
1
60
40
20
+ 40˚
+ 50˚
- 50˚
- 60˚
+ 60˚
+ 70˚
- 70˚
- 80˚
- 90˚
+ 80˚
+ 90˚
0.1
0.1
1
10
100
0
(
)
Distance to detector d mm
Angular displacement θ
GL480/GL480Q/GL483Q
(
) (
)
Fig.11 Radiation Diagram GL480 Ta = 25˚C
0˚
- 20˚
- 10˚
+ 10˚
+ 20˚
100
- 30˚
- 40˚
+ 30˚
80
60
40
20
+ 40˚
+ 50˚
- 50˚
- 60˚
+ 60˚
+ 70˚
- 70˚
- 80˚
- 90˚
+ 80˚
+ 90˚
0
Angular displacement θ
● Please refer to the chapter “ Precautions for Use.”
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