SGM721 [SGMICRO]
970レA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifier; 970レA， 10MHz的轨至轨输入/输出CMOS运算放大器
| 型号： | SGM721 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | 970レA, 10MHz, Rail-to-Rail I/O CMOS Operational Amplifier |
| 文件： | 总18页 (文件大小：642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM721
SGM722
SGM723
SGM724
970µA,10MHz, Rail-to-Rail I/O
CMOS Operational Amplifier
FEATURES
PRODUCT DESCRIPTION
• Low Cost
The SGM721 (single), SGM722 (dual), SGM723 (single with
shutdown) and SGM724 (quad) are low noise, low voltage,
and low power operational amplifiers, that can be designed
into a wide range of applications. The SGM721/2/3/4 have a
high Gain- Bandwidth Product of 10MHz, a slew rate of
8.5V/μs, and a quiescent current of 0.97mA/amplifier at 5V.
The SGM723 has a power-down disable feature that
reduces the supply current to 160nA.
• Rail-to-Rail Input and Output
1mV Typical VOS
• High Gain-Bandwidth Product: 10MHz
• High Slew Rate: 8.5V/µs
• Settling Time to 0.1% with 2V Step: 0.36 µs
• Overload Recovery Time: 0.4µs
• Low Noise : 8 nV/
Hz
• Operates on 2.5 V to 5.5V Supplies
• Input Voltage Range = - 0.1 V to +5.6 V with VS = 5.5 V
• Low Power
0.97 mA/Amplifier Typical Supply Current
SGM723 160nA when Disabled
• Small Packaging
The SGM721/2/3/4 are designed to provide optimal
performance in low voltage and low noise systems. They
provide rail-to-rail output swing into heavy loads. The
input common-mode voltage range includes ground, and
the maximum input offset voltage is 4mV for SGM721/2/3/4.
They are specified over the extended industrial
temperature range (−40°C to +125°C). The operating range
is from 2.5V to 5.5V.
SGM721 Available in SC70-5, SOT23-5 and SO-8
SGM722 Available in MSOP-8 and SO-8
SGM723 Available in SOT23-6 and SO-8
SGM724 Available in TSSOP-16 and SO-16
The single version, SGM721 is available in SC70-5, SOT23-5
and SO-8 packages. SGM723 is available in SOT23-6 and
SO-8 packages. The dual version SGM722 is available in
SO-8 and MSOP-8 packages. The quad version SGM724 is
available in SO-16 and TSSOP-16 packages.
PIN CONFIGURATIONS (Top View)
SGM721
SGM721/723
DISABLE
OUT
-VS
+VS
-IN
8
7
6
5
1
2
5
4
NC
-IN
+IN
-VS
1
2
3
4
(SGM723 ONLY)
+VS
OUT
NC
3
+IN
APPLICATIONS
Sensors
NC = NO CONNECT
SO-8
SC70-5 / SOT23-5
SGM723
Audio
Active Filters
A/D Converters
Communications
Test Equipment
OUT
-VS
6
5
4
+VS
1
2
3
SGM724
DISABLE
-IN
16
1
OUT D
-IND
OUT A
-IN A
+IN
15
14
2
3
4
5
6
+IN A
+VS
+IND
SOT23-6
Cellular and Cordless Phones
Laptops and PDAs
Photodiode Amplification
Battery-Powered Instrumentation
SGM722
13 -VS
12 +INC
+INB
8
7
6
5
+VS
OUTA
1
2
3
4
11
-INC
-INB
OUT B
NC
OUT B
-IN B
+IN B
-IN A
+IN A
-VS
OUT C
NC
7
8
10
9
NC = NO CONNECT
TSSOP-16 / SO-16
SO-8 / MSOP-8
REV. B
Shengbang Microelectronics Co, Ltd
Tel: 86/451/84348461
www.sg-micro.com
ELECTRICAL CHARACTERISTICS :VS = +5V
(At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted)
SGM721/2/3/4
PARAMETER
CONDITION
TYP
MIN/MAX OVER TEMPERATURE
0℃ to
70℃
-40℃
-40℃ to
MIN/
+25℃
+25℃
to 85℃ 125℃
UNITS MAX
INPUT CHARACTERISTICS
Input Offset Voltage (VOS
Input Bias Current (IB)
)
1
1
1
4
4.5
4.75
5
mV
pA
pA
V
dB
dB
dB
dB
µV/℃
MAX
TYP
TYP
TYP
MIN
MIN
MIN
MIN
TYP
Input Offset Current (IOS
)
Common-Mode Voltage Range (VCM
Common-Mode Rejection Ratio(CMRR) VS = 5.5V, VCM = - 0.1V to 4 V
VS = 5.5V, VCM = - 0.1V to 5.6 V
)
VS = 5.5V
-0.1 to +5.6
91
86
90
100
2.1
75
64
84
95
74
64
81
90
73
63
80
88
72.5
62
72
Open-Loop Voltage Gain( AOL
)
RL = 600Ω,Vo = 0.15V to 4.85V
RL =10KΩ,Vo = 0.05V to 4.95V
77
Input Offset Voltage Drift (∆VOS/∆T)
OUTPUT CHARACTERISTICS
Output Voltage Swing from Rail
RL = 600Ω
RL = 10KΩ
0.1
0.015
57
V
V
mA
Ω
TYP
TYP
MIN
TYP
Output Current (IOUT
)
53
52
50
45
Closed-Loop Output Impedance
F = 1MHz, G = +1
5.7
POWER-DOWN DISABLE
Turn-On Time
Turn-Off Time
2.2
0.8
µs
µs
V
TYP
TYP
MAX
MIN
DISABLE
Voltage-Off
0.8
2
DISABLE
Voltage-On
V
POWER SUPPLY
Operating Voltage Range
2.5
5.5
2.5
5.5
2.5
5.5
2.5
5.5
V
V
MIN
MAX
Power Supply Rejection Ratio (PSRR)
Vs = +2.5 V to + 5.5 V
VCM = (-VS) + 0.5V
IOUT = 0
100
80
79
78
77
dB
MIN
Quiescent Current/ Amplifier (IQ)
Supply Current when Disabled
(SGM723 only)
0.97
1.13
1.25
1.28
1.38
mA
MAX
0.16
1
µA
MAX
DYNAMIC PERFORMANCE
Gain-Bandwidth Product (GBP)
Phase Margin(φO)
Full Power Bandwidth(BWP)
Slew Rate (SR)
RL = 600Ω
10
63.5
400
8.5
0.36
0.4
MHz
degrees TYP
KHz
V/µs
µs
TYP
＜1% distortion
TYP
TYP
TYP
TYP
G = +1, 2 V Output Step
G = +1, 2 V Output Step
VIN ·Gain = Vs
Settling Time to 0.1%( tS)
Overload Recovery Time
µs
NOISE PERFORMANCE
Voltage Noise Density (en)
f = 1kHz
f = 10kHz
f = 1kHz
8
6.4
10
nV/
nV/
fA/
TYP
TYP
TYP
Hz
Hz
Hz
Current Noise Density( in)
Specifications subject to change without notice.
２
SGM721/2/3/4
PACKAGE/ORDERING INFORMATION
PACKAGE
DESCRIPTION
PACKAGE
OPTION
MARKING
INFORMATION
MODEL
ORDER NUMBER
SGM721XC5/TR
SGM721XN5/TR
SGM721XS/TR
SGM722XMS/TR
SGM722XS/TR
SGM723XN6/TR
SGM723XS/TR
SGM724XS/TR
SGM724XTS
SC70-5
SOT23-5
SO-8
Tape and Reel, 3000
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 3000
Tape and Reel, 2500
Tape and Reel, 2500
Tape and Reel, 3000
721
721
SGM721
SGM721XS
SGM722XMS
SGM722XS
723
MSOP-8
SO-8
SGM722
SGM723
SGM724
SOT23-6
SO-8
SGM723XS
SGM724XS
SGM724XTS
SO-16
TSSOP-16
CAUTION
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V+ to V- ............................................ 7.5 V
Common-Mode Input Voltage
This integrated circuit can be damaged by ESD.
Shengbang Micro-electronics recommends that all
integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage.
.................................... (–V
S
) – 0.5 V to (+V ) +0.5V
S
Storage Temperature Range..................... –65℃ to +150℃
Junction Temperature.................................................160℃
Operating Temperature Range.................–55℃ to +150℃
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to
damage because very small parametric changes could
cause the device not to meet its published
specifications.
Package Thermal Resistance @ T = 25℃
A
SC70-5, θJA................................................................ 333℃/W
SOT23-5, θJA.............................................................. 190℃/W
SOT23-6, θJA.............................................................. 190℃/W
SO-8, θJA......................................................................125℃/W
MSOP-8, θJA.............................................................. 216℃/W
SO-16, θJA..................................................................... 82℃/W
TSSOP-16, θJA............................................................ 105℃/W
Lead Temperature Range (Soldering 10 sec)
.....................................................260℃
ESD Susceptibility
HBM................................................................................1500V
MM....................................................................................400V
NOTES
1. Stresses above those listed under Absolute Maximum
Ratings may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
３
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
Closed-Loop Output Voltage Swing
Output Impedance vs.Frequency
6
5
4
3
2
1
0
100
80
60
40
20
0
Vs=5V
Vs=5V
IN =4.9VP-P
V
TA =25℃
RL =2KΩ
G= +1
G =100
G =10
G =1
1000
1
10
100
Frequency(kHz)
10000
10
100
1000
Frequency(kHz)
10000
Positive Overload Recovery
+2.5V
Negative Overload Recovery
Vs=±2
.
5V
RL =10KΩ
VIN =50mV
G=100
+2.5V
Vs=±2.5V
0V
0V
0V
0V
RL =10KΩ
VIN =50mV
G=100
-50mV
-50mV
Time(500ns/div)
Time(500ns/div)
Large-Signal Step Response
Small-Signal Step Response
Vs = 5V
G = +1
CL = 200pF
RL = 10KΩ
Vs = 5V
G = +1
CL = 100pF
RL = 10KΩ
Time(500ns/div)
Time(200ns/div)
４
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
CMRR vs.Frequency
PSRR vs.Frequency
120
110
100
90
120
100
80
Vs=5V
Vs=5V
80
60
70
60
40
50
20
40
1
10
100
Frequency(kHz)
1000
10000
1
10
100
Frequency(kHz)
1000
10000
Input Voltage Noise Spectral Density
vs.Frequency
Small-Signal Overshoot vs.Load Capacitance
70
60
50
40
30
20
10
0
100
10
1
Vs=5V
RL =10kΩ
TA =25℃
Vs=5V
RL =620Ω
G=1
+OS
-OS
10
100
1000
10000
1
10 100
Load Capacitance(pF)
1000
Frequency(Hz)
Channel Separation vs.Frequency
Open-Loop Gain vs.Temperature
130
120
110
100
90
120
110
100
90
RL=10KΩ
Vs=5V
RL =620Ω
TA =25℃
G=1
RL=600Ω
80
80
70
70
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
0.1
1
10
100
1000 10000 100000
Frequency(kHz)
５
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
CMRR vs.Temperature
VCM = - 0.1V to 4 V
PSRR vs.Temperature
120
110
100
90
130
120
110
100
90
VS = 5.5V
VS = 2.5V to 5.5V
80
VCM = - 0.1V to 5.6V
70
80
60
70
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
Shutdown Current vs.Temperature
Supply Current vs.Temperature
300
260
220
180
140
100
60
1.4
1.3
1.2
1.1
1
VS = 5V
VS = 2.5V
0.9
0.8
0.7
0.6
VS = 3V
VS = 3V
VS = 5V
VS = 2.5V
20
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
-50 -30 -10 10 30 50 70 90 110 130
Temperature(℃)
Output Voltage Swing vs.Output Current
Output Voltage Swing vs.Output Current
5
3
2
1
0
Sourcing Current
Sourcing Current
VS = 5V
4
3
2
1
0
VS = 3V
-50℃
135℃
25℃
135℃
25℃
-50℃
Sinking Current
Sinking Current
0
10 20 30 40 50 60 70 80 90
Output Current(mA)
0
10
20
30
40
50
60
Output Current(mA)
６
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
Small-Signal Overshoot vs.Load Capacitance
Output Impedance vs.Frequency
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
Vs=2.7V
RL =10kΩ
TA =25℃
Vs=2.7V
G=1
+OS
-OS
G =100
G =10
G =1
1
10
100
Frequency(kHz)
1000
10000
1
10 100
Load Capacitance(pF)
1000
Large-Signal Step Response
Small-Signal Step Response
Vs = 2.7V
Vs = 2.7V
G = +1
CL = 100pF
RL = 10KΩ
G = +1
CL = 200pF
RL = 10KΩ
Time(500ns/div)
Time(200ns/div)
Channel Separation vs.Frequency
Closed-Loop Output Voltage Swing
3
130
2.5
2
120
110
100
90
1.5
1
Vs=2.7V
IN =2.6VP-P
Vs=2.7V
RL =620Ω
TA =25℃
G=1
V
TA =25℃
RL =2KΩ
G=1
0.5
0
80
70
10
100
1000
10000
0.1
1
10
100
1000 10000 100000
Frequency(kHz)
Frequency(kHz)
７
SGM721/2/3/4
TYPICAL PERFORMANCE CHARACTERISTICS
At TA = +25℃,VCM = Vs/2, RL = 600Ω, unless otherwise noted.
Offset Voltage Production Distribution
33
30
Typical production
distribution of
packaged units.
27
24
21
18
15
12
9
6
3
0
-4
-3
-2
-1
0
1
2
3
4
Offset Voltage(mV)
８
SGM721/2/3/4
Power-Supply Bypassing and Layout
APPLICATION NOTES
Driving Capacitive Loads
The SGM72x family operates from either a single +2.5V to
+5.5V supply or dual ±1.25V to ±2.75V supplies. For
single-supply operation, bypass the power supply VDD with a
0.1µF ceramic capacitor which should be placed close to the
VDD pin. For dual-supply operation, both the VDD and the VSS
supplies should be bypassed to ground with separate 0.1µF
The SGM72x can directly drive 4700pF in unity-gain without
oscillation. The unity-gain follower (buffer) is the most sensitive
configuration to capacitive loading. Direct capacitive loading
reduces the phase margin of amplifiers and this results in
ringing or even oscillation. Applications that require greater
capacitive drive capability should use an isolation resistor
between the output and the capacitive load like the circuit in
Figure 1. The isolation resistor RISO and the load capacitor CL
form a zero to increase stability. The bigger the RISO resistor
value, the more stable VOUT will be. Note that this method
results in a loss of gain accuracy because RISO forms a voltage
ceramic capacitors. 2.2µF tantalum capacitor can be added for
better performance.
Good PC board layout techniques optimize performance by
decreasing the amount of stray capacitance at the op amp’s
inputs and output. To decrease stray capacitance, minimize
trace lengths and widths by placing external components as
close to the device as possible. Use surface-mount
components whenever possible.
divider with the RLOAD
.
For the operational amplifier, soldering the part to the board
directly is strongly recommended. Try to keep the high
frequency big current loop area small to minimize the EMI
(electromagnetic interfacing).
RISO
SGM721
VOUT
VIN
CL
VDD
10µF
VDD
10µF
0.1µF
Figure 1. Indirectly Driving Heavy Capacitive Load
0.1µF
An improvement circuit is shown in Figure 2. It provides DC
accuracy as well as AC stability. RF provides the DC accuracy
by connecting the inverting signal with the output. CF and RIso
serve to counteract the loss of phase margin by feeding the
high frequency component of the output signal back to the
amplifier’s inverting input, thereby preserving phase margin in
the overall feedback loop.
Vn
Vp
VOUT
Vn
Vp
SGM721
VOUT
SGM721
10µF
CF
0.1µF
VSS(GND)
RF
RISO
SGM721
VOUT
VSS
VIN
CL
RL
Figure 3. Amplifier with Bypass Capacitors
Figure 2. Indirectly Driving Heavy Capacitive Load with DC
Accuracy
Grounding
A ground plane layer is important for SGM72x circuit design.
The length of the current path speed currents in an inductive
ground return will create an unwanted voltage noise. Broad
ground plane areas will reduce the parasitic inductance.
For no-buffer configuration, there are two others ways to
increase the phase margin: (a) by increasing the amplifier’s
gain or (b) by placing a capacitor in parallel with the feedback
resistor to counteract the parasitic capacitance associated with
inverting node.
Input-to-Output Coupling
To minimize capacitive coupling, the input and output signal
traces should not be parallel. This helps reduce unwanted
positive feedback.
９
SGM721/2/3/4
Typical Application Circuits
C
Differential Amplifier
R2
The circuit shown in Figure 4 performs the difference function.
If the resistors ratios are equal ( R4 / R3 = R2 / R1 ), then
R1
VIN
V
OUT = ( Vp – Vn ) × R2 / R1 + Vref.
R2
VOUT
SGM721
R1
Vn
VOUT
SGM721
R3=R1//R2
Vp
R3
Figure 6. Low Pass Active Filter
R4
Vref
Figure 4. Differential Amplifier
Instrumentation Amplifier
The circuit in Figure 5 performs the same function as that in
Figure 4 but with the high input impedance.
R2
R1
SGM721
Vn
SGM721
VOUT
Vp
R3
R4
SGM721
Vref
Figure 5. Instrumentation Amplifier
Low Pass Active Filter
The low pass filter shown in Figure 6 has a DC gain of (-R2/R1)
and the –3dB corner frequency is 1/2πR2C. Make sure the filter
is within the bandwidth of the amplifier. The Large values of
feedback resistors can couple with parasitic capacitance and
cause undesired effects such as ringing or oscillation in
high-speed amplifiers. Keep resistors value as low as possible
and consistent with output loading consideration.
１０
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SC70-5
D
e1
θ
Dimensions
Dimensions
In Inches
Symbol
In Millimeters
e
Min
0.900
0.000
0.900
0.150
0.080
Max
1.100
0.100
1.000
0.350
0.150
Min
0.035
0.000
0.035
0.006
0.003
Max
0.043
0.004
0.039
0.014
0.006
A
A1
A2
b
c
D
E
E1
e
2.000
1.150
2.150
2.200
1.350
2.450
0.079
0.045
0.085
0.087
0.053
0.096
b
0.20
C
0.650TYP
0.026TYP
e1
L
1.200
1.400
0.047
0.055
0.525REF
0.021REF
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
１１
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SOT23-5
D
θ
Dimensions
Dimensions
In Inches
0.20
0
Symbol
In Millimeters
b
Min
Max
Min
Max
A
A1
A2
b
c
D
E
E1
e
1.050
1.250
0.041
0.049
0.000
1.050
0.300
0.100
2.820
1.500
2.650
0.100
1.150
0.400
0.200
3.020
1.700
2.950
0.000
0.041
0.012
0.004
0.111
0.059
0.104
0.004
0.045
0.016
0.008
0.119
0.067
0.116
e
C
e1
0.950TYP
0.037TYP
e1
L
1.800
2.000
0.071
0.028REF
0.079
0.700REF
L1
θ
0.300
0°
0.600
8°
0.012
0°
0.024
8°
１２
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SOT23-6
Dimensions
Dimensions
In Inches
D
e1
Symbol
In Millimeters
θ
Min
1.050
0.000
1.050
0.300
0.100
2.820
1.500
Max
1.250
0.100
1.150
0.400
0.200
3.020
1.700
Min
0.041
0.000
0.041
0.012
0.004
0.111
0.059
Max
0.049
0.004
0.045
0.016
0.008
0.119
0.067
0.20
e
0
A
A1
A2
b
c
D
E
E1
e
2.650
2.950
0.104
0.037TYP
0.116
b
C
0.950TYP
e1
L
1.800
2.000
0.071
0.028REF
0.079
0.700REF
L1
θ
0.300
0°
0.600
8°
0.012
0°
0.024
8°
１３
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SO-8
D
Dimensions
Dimensions
In Inches
C
Symbol
In Millimeters
Min
1.350
0.100
1.350
0.330
0.190
4.780
3.800
5.800
Max
1.750
0.250
1.550
0.510
0.250
5.000
4.000
6.300
Min
0.053
0.004
0.053
0.013
0.007
0.188
0.150
0.228
Max
0.069
0.010
0.061
0.020
0.010
0.197
0.157
0.248
A
A1
A2
B
C
D
E
E1
e
θ
e
1.270TYP
0.050TYP
B
L
θ
0.400
0°
1.270
8°
0.016
0°
0.050
8°
１４
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
MSOP-8
C
b
Dimensions
Dimensions
In Inches
Symbol In Millimeters
Min
0.800
0.000
0.760
Max
1.200
0.200
0.970
Min
0.031
0.000
0.030
Max
0.047
0.008
0.038
A
A1
A2
b
0.30 TYP
0.15 TYP
2.900 3.100
0.65 TYP
0.012 TYP
0.006 TYP
0.114 0.122
0.026 TYP
c
θ
D
e
e
E
2.900
3.100
5.100
0.650
6°
0.114
0.122
0.201
0.026
6°
A2
A
E1
L
4.700
0.410
0°
0.185
0.016
0°
θ
D
１５
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
SO-16
D
C
Dimensions
Dimensions
In Inches
Symbol
In Millimeters
Min
1.350
0.100
1.350
0.330
0.170
9.800
3.800
5.800
Max
1.750
0.250
1.550
0.510
0.250
10.20
4.000
6.200
Min
0.053
0.004
0.053
0.013
0.007
0.386
0.150
0.228
Max
0.069
0.010
0.061
0.020
0.010
0.402
0.157
0.244
A
A1
A2
b
c
θ
D
E
e
E1
e
1.270 (BSC)
0.050 (BSC)
L
θ
0.400
0°
1.270
8°
0.016
0°
0.050
8°
b
１６
SGM721/2/3/4
PACKAGE OUTLINE DIMENSIONS
TSSOP-16
A
b
Dimensions
Dimensions
In Inches
Symbol In Millimeters
Min
4.900
4.300
0.190
0.090
6.250
Max
5.100
4.500
0.300
0.200
6.550
1.100
1.000
0.150
Min
0.193
0.169
0.007
0.004
0.246
Max
0.201
0.177
0.012
0.008
0.258
0.043
0.039
0.006
D
E
b
PIN #1 IDENT.
c
A2
A
E1
A
e
A2
A1
e
0.800
0.020
0.031
0.001
C
θ
0.65 (BSC)
0.026 (BSC)
L
H
θ
0.500
0.700
0.020
0.028
7°
A
0.25(TYP)
0.01(TYP)
D
1°
7°
1°
H
A1
１７
SGM721/2/3/4
REVISION HISTORY
Location
Page
11/06— Data Sheet changed from REV. A to REV. B
Changes to ABSOLUTE MAXIMUM ATINGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Shengbang Microelectronics Co, Ltd
Unit 3, ChuangYe Plaza
No.5, TaiHu Northern Street, YingBin Road Centralized Industrial Park
Harbin Development Zone
Harbin, HeiLongJiang 150078
P.R. China
Tel.: 86-451-84348461
Fax: 86-451-84308461
www.sg-micro.com
１８
SGM721/2/3/4
相关型号：
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