SGM13005H1 [SGMICRO]
Low Noise Amplifier for LTE High Band;
| 型号： | SGM13005H1 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | Low Noise Amplifier for LTE High Band LTE |
| 文件： | 总10页 (文件大小：639K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM13005H1
Low Noise Amplifier for LTE High Band
GENERAL DESCRIPTION
FEATURES
The SGM13005H1 is a low noise amplifier (LNA) for LTE
high band receiver applications. The device features low
noise figure and high linearity over a supply voltage
range from 1.5V to 3.6V. Low noise figure improves the
sensitivity of the SGM13005H1, and high linearity
enables the device to provide better immunity to
interference signals.
● Operating Frequency Range: 2300MHz to 2700MHz
● Low Noise Figure: 1.1dB at 2500MHz
● Low Operation Current: 6.1mA
● Supply Voltage Range: 1.5V to 3.6V
● Input and Output DC Decoupled
● Integrated Matching for the Output
● Available in Green UTDFN-1.1×0.7-6L Package
No external DC blocking capacitors are required on the
RF paths as long as no external DC voltage is applied,
which can save PCB area and cost.
BLOCK DIAGRAM
VDD
The SGM13005H1 is available in a Green UTDFN-
1.1×0.7-6L package.
EN
Bias
GND
APPLICATIONS
RFIN
RFOUT
Cell Phones
Tablets
Other RF Front-End Modules
Figure 1. SGM13005H1 Block Diagram
SG Micro Corp
DECEMBER 2022 – REV.A
www.sg-micro.com
SGM13005H1
Low Noise Amplifier for LTE High Band
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM13005H1 UTDFN-1.1×0.7-6L
SGM13005H1YUEC6G/TR
01
Tape and Reel, 10000
-40℃ to +85℃
MARKING INFORMATION
NOTE: Fixed character for 01.
YY
Serial Number
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
ABSOLUTE MAXIMUM RATINGS
OVERSTRESS CAUTION
Supply Voltage, VDD ........................................ -0.3V to 4.0V
EN to GND ..................................................... -0.3V to 3.6V
Supply Maximum Current, IVDD ................................... 30mA
RF Input Power, PIN ................................................. 18dBm
Junction Temperature ..............................................+150℃
Storage Temperature Range ......................-55℃ to +150℃
Lead Temperature (Soldering, 10s) ..........................+260℃
ESD Susceptibility
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
ESD SENSITIVITY CAUTION
HBM......................................................................... 1500V
CDM......................................................................... 2000V
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handling and installation procedures
can cause damage. ESD damage can range from subtle
performancedegradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
RECOMMENDED OPERATING CONDITIONS
Operating Frequency Range, f0 ......... 2300MHz to 2700MHz
Operating Temperature Range.....................-40℃ to +85℃
Supply Voltage Range, VDD .............................. 1.5V to 3.6V
Control Voltage High, VCTL_H.............................1.35V to VDD
Control Voltage Low, VCTL_L............................... 0V to 0.45V
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
2
SGM13005H1
Low Noise Amplifier for LTE High Band
PIN CONFIGURATION
(TOP VIEW)
1
6
GND
EN
2
5
VDD
RFIN
3
4
RFOUT
GND
UTDFN-1.1×0.7-6L
PIN DESCRIPTION
PIN
1, 4
2
NAME
GND
VDD
FUNCTION
Ground.
Power Supply.
LNA Output.
3
RFOUT
RFIN
EN
5
LNA Input from Antenna.
6
Active High Enable Input for the Device.
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
3
SGM13005H1
Low Noise Amplifier for LTE High Band
ELECTRICAL CHARACTERISTICS
(TA = +25℃, VDD = 1.5V to 3.6V, f0 = 2300MHz to 2690MHz, typical values are at VDD = 2.8V, input and output resistance = 50Ω,
unless otherwise noted.)
PARAMETER
DC Characteristics
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VDD
IVDD
1.5
3.6
7.5
V
Supply Current
EN = High
High
6.1
1.8
0
mA
VCTL_H
VCTL_L
1.35
0
VDD
0.45
Control Voltage
V
Low
RF Characteristics
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
12.8
12.7
12.0
13.8
13.7
12.9
-7.5
-9.0
-9.9
-10.9
-10.6
-7.1
-28.7
-28.4
-29.1
1.1
Power Gain
G
RLI
dB
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
RLO
ISO
NF
dB
-28.0
-27.7
-28.4
dB
1.1
dB
1.2
-5.0
-4.3
-3.5
1.2
Input Power 1dB
Compression Point
P1dB
IIP3_ib
dBm
dBm
f1 = 2300MHz, f2 = 2301MHz, P1 = P2 = -25dBm
f1 = 2500MHz, f2 = 2501MHz, P1 = P2 = -25dBm
f1 = 2700MHz, f2 = 2701MHz, P1 = P2 = -25dBm
Time from EN on to 90% of the gain
Input In-Band IP3
2.1
2.9
Turn-On Time
Turn-Off Time
tON
1.1
1.4
0.5
μs
μs
tOFF
Time from EN off to 10% of the gain
0.1
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
4
SGM13005H1
Low Noise Amplifier for LTE High Band
ELECTRICAL CHARACTERISTICS (Continued)
(TA = +25℃, VDD = 1.5V to 3.6V, f0 = 2300MHz to 2700MHz, typical values are at VDD = 1.8V, input and output resistance = 50Ω,
unless otherwise noted.)
PARAMETER
DC Characteristics
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
VDD
IVDD
1.5
3.6
7.8
V
Supply Current
EN = High
High
6.4
1.8
0
mA
VCTL_H
VCTL_L
1.35
0
VDD
0.45
Control Voltage
V
Low
RF Characteristics
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
f0 = 2300MHz
f0 = 2500MHz
f0 = 2700MHz
12.9
12.8
11.9
13.9
13.6
12.8
-7.6
-9.2
-9.9
-11.8
-10.4
-6.8
-28.7
-28.4
-28.9
1.1
Power Gain
G
RLI
dB
dB
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
RLO
ISO
NF
dB
-28.0
-27.7
-28.2
dB
1.1
dB
1.1
-7.0
-6.5
-5.6
1.0
Input Power 1dB
Compression Point
P1dB
IIP3_ib
dBm
dBm
f1 = 2300MHz, f2 = 2301MHz, P1 = P2 = -25dBm
f1 = 2500MHz, f2 = 2501MHz, P1 = P2 = -25dBm
f1 = 2700MHz, f2 = 2701MHz, P1 = P2 = -25dBm
Time from EN on to 90% of the gain
Input In-Band IP3
1.8
2.6
Turn-On Time
Turn-Off Time
tON
1.3
1.5
0.5
μs
μs
tOFF
Time from EN off to 10% of the gain
0.1
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
5
SGM13005H1
Low Noise Amplifier for LTE High Band
TYPICAL APPLICATION CIRCUIT
L2
Optional
Supply Voltage
VDD
Enable
EN
C1
SGM13005H1
L1
LNA Input
RFIN
GND
LNA Output
RFOUT
Figure 2. SGM13005H1 Typical Application Circuit
Table 1. Inductor Selection Table
Part
Typical (nH)
Q (min)
Frequency (MHz)
MFR
Size
LQW15A
4.7
25
250
Murata
0402
Table 2. Capacitor Selection Table
Part
Typical (pF)
1000
Voltage (V)
50
MFR
Size
GRM155
Murata
0402
EVALUATION BOARD LAYOUT
Figure 3. Evaluation Board Layout
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
6
SGM13005H1
Low Noise Amplifier for LTE High Band
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (DECEMBER 2022) to REV.A
Page
Changed from product preview to production data..................................................................................................................................................... All
SG Micro Corp
www.sg-micro.com
DECEMBER 2022
7
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
UTDFN-1.1×0.7-6L
D
N6
Φ
b
E
e1
N1
H
PIN 1#
e
H
TOP VIEW
BOTTOM VIEW
Φ
0.20
0.40
A
A1
0.40
A2
SIDE VIEW
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions In Millimeters
Symbol
MIN
MOD
0.450
MAX
0.500
0.050
A
A1
A2
D
0.400
0.000
0.020
0.152 REF
1.100
1.050
0.650
0.150
0.300
0.300
1.150
0.750
0.250
0.500
0.500
E
0.700
b
0.200
e
0.400
e1
H
0.400
0.100 REF
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00199.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
UTDFN-1.1×0.7-6L
7″
9.5
0.80
1.20
0.55
4.0
2.0
2.0
8.0
Q1
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
7″
368
442
227
410
224
224
8
18
SG Micro Corp
www.sg-micro.com
TX20000.000
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