SD040SA60A [SENSITRON]
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 ∑C TJ Operation); 硅肖特基整流器死得很低正向压降（ 150℃ TJ操作）
| 型号： | SD040SA60A |
| 厂家： | 
SENSITRON |
| 描述： | SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 ∑C TJ Operation) |
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD040SA60A/B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 1019, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Very Low Forward Voltage Drop (150 °C TJ Operation)
Applications:
· Switching Power Supply · Converters · Free-Wheeling Diodes · Polarity Protection Diode
Features:
·
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
·
·
·
·
·
·
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Electrically / Mechanically Stable during and after Packaging
Maximum Ratings(1):
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Condition
-
50% duty cycle, rectangular
wave form
Max.
60
1
Units
V
A
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
IFSM
EAS
IAR
8.3 ms, half Sine wave
20
5.0
A
mJ
A
TJ = 25 °C, IAS = 0.74 A,
L = 18 mH
IAS decay linearly to 0 in 1 ms
Repetitive Avalanche Current
0.74
¦ limited by TJ max VA=1.5VR
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
-
-
-65 to +150
-65 to +150
°C
°C
Electrical Characteristics(1):
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
@ 1A, Pulse, TJ = 25 °C
@ 1A, Pulse, TJ = 125 °C
@VR = 60V, Pulse,
TJ = 25 °C
Max.
0.56
0.51
100
Units
V
V
VF2
IR1
Max. Reverse Current
mA
IR2
CT
@VR = 60V, Pulse,
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
9.0
53
mA
pF
Max. Junction Capacitance
(1) in SHD package
VSIG = 50mV (p-p)
· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SD040SA60A/B
SENSITRON
TECHNICAL DATA
DATA SHEET 1019, REV. A
Mechanical Dimensions: In Inches / mm
Bottom side metalization Ag - 30 kÅ minimum.
Top side metalization Al - 25 kÅ minimum
or Ag - 30 kÅ minimum.
0.034 ± 0.003 0.040 ± 0.003
(0.86 ± 0.077) (1.02 ± 0.077)
Bottom side is cathode, top side is anode.
Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top;
Dimension H = 0.0155 ± 0.001 (0.39 ± 0.026) for Ag top.
H
Typical Forward Characteristics
Typical Reverse Characteristics
101
150 °C
100
125 °C
150 °C
100 °C
-1
100
10-1
10-2
10
75 °C
-2
10
50 °C
-3
10
25 °C
125 °C
25 °C
-4
10
0
10
20
30
40
50
60
Reverse Voltage - V (V)
R
Typical Junction Capacitance
50
45
40
35
30
25
20
15
10
0.0
0.2
0.4
0.6
0.8
0
10
20
30
40
50
60
Forward Voltage Drop - V (V)
Reverse Voltage - V (V)
F
R
· 221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 242-9798 ·
· World Wide Web Site - http://www.sensitron.com · E-Mail Address - sales@sensitron.com ·
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
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• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C TJ Operation)
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SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 ∑C TJ Operation)
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