MBRB20200CT-T4 [SENSITRON]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, PLASTIC, D2PAK-3;
| 型号： | MBRB20200CT-T4 |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, PLASTIC, D2PAK-3 二极管 |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20200CT
MBRB20200CT
MBR20200CT-1
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 2915, Rev. B
MBR20200CT/MBRB20200CT/MBR20200CT-1
SCHOTTKY RECTIFIER
Applications:
•
Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection
Features:
•
•
•
•
150 °C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
•
•
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Case styles
MBR20200CT
MBRB20200CT
MBR20200CT-1
TO-220AB
D2PAK
TO-262
Mechanical Dimensions: In Inches / mm
TO-220AB
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT
MBRB20200CT
MBR20200CT-1
SENSITRON
SEMICONDUCTOR
Data Sheet 2915, Rev. B
D2PAK
4.69(0.185)
4.20(0.165)
BASE
COMMON
CATHODE
10.16(0.400)
REF.
1.32(0.052)
1.22(0.048)
1.37(0.054)
1.17(0.046)
8.90(0.350)
8.50(0.335)
15.49(0.610)
14.73(0.580)
1.70(0.067)
1.30(0.051)
5.28(0.208)
4.78(0.188)
ANODE 1
COMMON
CATHODE
ANODE 2
0.55(0.022)
0.46(0.018)
1.40(0.055)
1.14(0.045)
3×
0.93(0.037)
2×
0.69(0.027)
5.08(0.200)REF.
TO-262
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT
MBRB20200CT
MBR20200CT-1
SENSITRON
SEMICONDUCTOR
Data Sheet 2915, Rev. B
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Condition
Max.
200
Units
V
-
Max. Average Forward
IF(AV)
50% duty cycle @TC =125°C,
rectangular wave form
10(Per leg)
20(Per device)
A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
180
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg)*
Symbol
Condition
Max.
0.90
1.00
0.80
0.90
Units
V
VF1
@ 10A, Pulse, TJ = 25 °C
@ 20 A, Pulse, TJ = 25 °C
@ 10 A, Pulse, TJ = 125 °C
@ 20 A, Pulse, TJ = 125 °C
VF2
V
Max. Reverse Current (per
leg)*
IR1
IR2
@VR = rated V
TJ = 25 °C
R
1.00
mA
mA
pF
@VR = rated V
TJ = 125 °C
R
50
Max. Junction Capacitance
(per leg)
CT
500
@VR = 5V, TC = 25 °C
SIG = 1MHz
f
Typical Series Inductance
(per leg)
Max. Voltage Rate of Change
LS
Measured lead to lead 5 mm from
package body
8.0
nH
V/µs
dv/dt
-
10,000
* Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Symbol
TJ
Tstg
RθJC
Condition
Specification
-55 to +150
-55 to +150
2.0
Units
°C
°C
Max. Junction Temperature
Max. Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
-
-
DC operation
°C/W
Maximum Thermal
Resistance Junction to Case
(per package)
Maximum Thermal
Resistance, Case to Heat
Sink
DC operation
-
-
RθJC
°C/W
°C/W
Mounting surface,
smooth and greased
(only for TO-220)
RθCS
Approximate Weight
Mounting Torque
wt
TM
-
-
2
g
6(Min.)
12(Max.)
Kg-cm
Case Style
TO-220AB D2PAK TO-262
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR20200CT
MBRB20200CT
MBR20200CT-1
SENSITRON
SEMICONDUCTOR
Data Sheet 2915, Rev. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting
from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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