MBR1060 [SENSITRON]

SCHOTTKY RECTIFIER; 肖特基整流器器
MBR1060
型号: MBR1060
厂家: SENSITRON    SENSITRON
描述:

SCHOTTKY RECTIFIER
肖特基整流器器

文件: 总4页 (文件大小:52K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR1060  
MBRB1060  
SENSITRON  
SEMICONDUCTOR  
Technical Data  
Data Sheet 3058, Rev.C  
MBR1060/MBRB1060  
SCHOTTKY RECTIFIER  
Applications:  
Switching power supply Converters Free-Wheeling diodes Reverse battery protection  
Features:  
150 °C TJ operation  
Center tap configuration  
Low forward voltage drop  
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and  
moisture resistance  
High frequency operation  
Guard ring for enhanced ruggedness and long term reliability  
MBR1060  
MBRB1060  
D2PAK  
TO-220AC  
Mechanical Dimensions: In Inches / mm  
10.54(0.415)  
MAX  
3.935(0.155)  
DIA  
3.735(0.147)  
1.32(0.052)  
1.22(0.048)  
2.92(0.115)  
2.54(0.100)  
TO-220AC  
0.30(0.012)MAX  
12.46(0.491)  
12.06(0.475)  
8.90(0.350)  
8.50(0.335)  
3
1
1
2
3
Cathode  
Anode  
2.89(0.114)  
2.52(0.099)  
3.96(0.16)  
3.55(0.14)  
14.09(0.555)  
13.47(0.530)  
0.94(0.037)  
0.69(0.027)  
0.53(0.021)  
0.31(0.012)  
1.40(0.055)  
1.15(0.045)  
1
2
3
4.67(0.184)  
4.47(0.176)  
5.08(0.200)REF  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  
MBR1060  
MBRB1060  
SENSITRON  
SEMICONDUCTOR  
Data Sheet 3058, Rev.C  
D2PAK  
4.69(0.185)  
4.20(0.165)  
BASE  
COMMON  
CATHODE  
10.16(0.400)  
REF.  
1.37(0.054)  
1.17(0.046)  
1.32(0.052)  
1.22(0.048)  
2
8.90(0.350)  
8.50(0.335)  
15.49(0.610)  
14.73(0.580)  
1.70(0.067)  
1.30(0.051)  
5.28(0.208)  
4.78(0.188)  
ANODE 1  
ANODE 3  
0.55(0.022)  
0.46(0.018)  
1.40(0.055)  
1.14(0.045)  
3
×
0.93(0.037)  
0.69(0.027)  
2×  
5.08(0.200)REF.  
Maximum Ratings:  
Characteristics  
Symbol  
Condition  
Max.  
60  
Units  
Peak Inverse Voltage  
Max. Average Forward  
VRWM  
IF(AV)  
-
V
A
50% duty cycle @TC = 154°C,  
rectangular wave form  
10  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
IFSM  
8.3 ms, half Sine pulse  
150  
A
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  
MBR1060  
MBRB1060  
SENSITRON  
SEMICONDUCTOR  
Data Sheet 3058, Rev.C  
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Max. Forward Voltage Drop  
VF1  
0.80  
V
@ 10A, Pulse, TJ = 25 °C  
VF2  
IR1  
0.70  
1.0  
V
mA  
mA  
pF  
@ 10A, Pulse, TJ = 125 °C  
Max. Reverse Current  
@VR = rated V  
R
TJ = 25 °C  
IR2  
@VR = rated V  
TJ = 125 °C  
R
6
Max. Junction Capacitance  
Typical Series Inductance  
CT  
-
@VR = 5V, TC = 25 °C  
fSIG = 1MHz  
Measured lead to lead 5 mm from  
LS  
8.0  
nH  
package body  
Max. Voltage Rate of Change  
dv/dt  
-
10,000  
V/µs  
* Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications:  
Characteristics  
Symbol  
TJ  
Tstg  
RθJC  
Condition  
Specification  
-55 to +150  
-55 to +150  
2.0  
Units  
°C  
°C  
Max. Junction Temperature  
Max. Storage Temperature  
Maximum Thermal  
-
-
DC operation  
Resistance Junction to Case  
°C/W  
°C/W  
Maximum Thermal  
Resistance, Case to Heat  
Sink  
DC operation  
0.5  
RθJA  
Approximate Weight  
Mounting Torque  
wt  
TM  
-
-
2
g
6(Min.)  
12(Max.)  
Kg-cm  
Case Style  
TO-220AB D2PAK TO-262  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  
MBR1060  
MBRB1060  
SENSITRON  
SEMICONDUCTOR  
Data Sheet 3058, Rev.C  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve  
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest  
version of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or  
by means of users’ fail-safe precautions or other arrangement .  
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during  
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual  
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.  
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting  
from use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of  
Sensitron Semiconductor.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations.  
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com •  

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