BAV74-T1 [SENSITRON]
Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3;
| 型号： | BAV74-T1 |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, PLASTIC PACKAGE-3 光电二极管 |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
BAV70/74
SMALL SIGNAL SWITCHING DIODE
SEMICONDUCTOR
Data Sheet 2771, Rev. -
Features
ꢀ
High Conductance
L
ꢀ
ꢀ
Fast Switching
Surface Mount Package Ideally Suited for
Automatic Insertion
A
TOP VIEW
ꢀ
ꢀ
For General Purpose and Switching
Plastic Material – UL Recognition Flammability
Classification 94V-O
B
C
M
E
D
SOT-23
Min Max
H
G
Dim
A
Min
Max
0.37 0.51 0.014 0.020
1.19 1.40 0.047 0.055
2.10 2.50 0.083 0.098
0.89 1.05 0.035 0.041
0.45 0.61 0.018 0.024
Mechanical Data
B
C
ꢀ
ꢀ
Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Mounting Position: Any
K
D
J
E
G
H
1.78 2.05
0.07
0.081
ꢀ
ꢀ
ꢀ
ꢀ
2.65 3.05 0.104 0.120
0.013 0.15 0.0005 0.006
0.89 1.10 0.035 0.043
0.45 0.61 0.018 0.024
J
K
L
Marking: A2
TOP VIEW
0.17
0.076
In mm
M
0.003 0.007
In inch
Maximum Ratings @TA=25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
70
BAV74
BAV70
V
Forward Continuous Current (Note 1)
IF
200
200
mA
mA
Average Rectified Output Current (Note 1)
IO
Pulse Width=1.0 s
1.0
2.0
Peak Forward Surge Current (Note 1)
IFSM
A
Pulse Width=1.0 ms
350
Power Dissipation (Note 1)
Pd
mW
°C/W
°C
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
RθJA
357
Tj, TSTG
-55 to +150
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
@ IRS = 100µA
70(BAV70)
50(BAV74)
V(BR)R
—
V
V
1.0(BAV70)
150(BAV74)
@ IF = 50mA (BAV70)
@ IF = 100mA (BAV74)
Forward Voltage
VF
IR
—
—
5.0(BAV70)
100(BAV74)
@ VR = 70V (BAV70)
@ VR = 50V (BAV74)
Reverse Leakage Current
µA
1.5(BAV70)
2.0(BAV74)
Junction Capacitance
Cj
trr
—
—
pF
nS
VR = 0V, f = 1.0MHz
6.0(BAV70)
4.0(BAV74)
IF = IR = 10mA,
IRR = 0.1 x IR, RL = 100Ω
Reverse Recovery Time
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
ꢀ
SENSITRON
BAV70/74
SMALL SIGNAL SWITCHING DIODE
SEMICONDUCTOR
Data Sheet 2771, Rev. -
Note: 1. Device mounted on fiberglass substrate 40 x 40 x 1.5mm.
Forward current I = f (T )
Reverse current I = f (T )
F
S
R
A
BAV 74
EHB00070
10 5
nA
220
mA
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ΙR
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ 1ꢀ 8ꢀ0ꢀ
VR = 70 V
10 4
160
max.
5
140
120
100
80
70V
25V
10 3
5
typ.
50
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
10 2
5
60
ꢀ
40
ꢀ
ꢀ
20
101
0
°C
0
15 30 45 60 75 90 105 120
150
0
100
150
˚C
T
S
TA
ꢀ
Forward current I = f (V )
Peak forward current I = f (t )
FM p
F
F
T = 25°C
T = 25°C
A
A
BAV 74
EHB00072
BAV 74
EHB00071
10 2
A
150
D = 0.005
0.01
Ι FM
Ι F
mA
0.02
0.05
10 1
10 0
10-1
10-2
0.1
0.2
100
50
typ
max
tp
T
tp
D =
T
0
0
0.5
1.0
V
1.5
10-6
10-5
10-4
10-3
10-2
10-1 s 100
VF
t
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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