5341 [SENSITRON]

HERMETIC SILICON CARBIDE RECTIFIER; HERMETIC碳化硅整流器


型号：	5341
厂家：	SENSITRON
描述：	HERMETIC SILICON CARBIDE RECTIFIER HERMETIC碳化硅整流器
文件：	总4页 (文件大小：382K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHDC624172

SHDC624172P

SHDC624172N

SHDC624172D

SENSITRON

SEMICONDUCTOR

DATA SHEET 5341, Rev. -

HERMETIC SILICON CARBIDE RECTIFIER

DESCRIPTION: A 1200-VOLT, 50 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC

HERMETIC TO-258 PACKAGE

FEATURES:

NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR

High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at

high frequency; use part number prefix SHDG

MAXIMUM RATINGS

RATING

ALL RATINGS ARE @ T_C= 25 C UNLESS OTHERWISE SPECIFIED.

SYMBOL

MAX.

1200

100

UNITS

Volts

PEAK INVERSE VOLTAGE

PIV

I_O

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC, for part numbers

with P and N suffixes)

Amps

MAXIMUM DC OUTPUT CURRENT (With T_C= 65 ^OC, for part number

with D suffix or without suffix)

I_O

Amps

MAXIMUM REPETITIVE FORWARD SURGE CURRENT

(t = 8.3ms, Sine) per leg, T_C= 25 ^OC

I_FRM

200

MAXIMUM POWER DISSIPATION, T_C= 25 ^OC

P_d

175

MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL

PACKAGE For Common Cathode/Anode Configurations)

1.00

R _JC

C/W

MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*

Top, Tstg

-55 to

+200

* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device

above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.

 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com

SHDC624172

SHDC624172P

SHDC624172N

SHDC624172D

SENSITRON

SEMICONDUCTOR

DATA SHEET 5341, Rev. -

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC

TYP

MAX.

UNITS

1.70

2.50

2.00

3.00

MAXIMUM FORWARD VOLTAGE DROP (I_f=10A PER LEG) V_fT_J=25 C

T_J=175 C

Volts

0.01

0.02

0.20

1.00

MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) I_rT_J= 25 C

T_J= 175 C

305

TOTAL CAPACITIVE CHARGE (V_R=1200V, I_F=50A, di/dt=500A/ s and

T_J=25 C)

Q_C,per leg

TOTAL JUNCTION CAPACITANCE (V_r=400V, f=1MHz PER LEG)

C_T

325

 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com

SHDC624172

SHDC624172P

SHDC624172N

SHDC624172D

SENSITRON

SEMICONDUCTOR

DATA SHEET 5341, Rev. -

MECHANICAL DIMENSIONS

TO-258

.270 (6.86

.165

.155

(4.19

3.94)

.695 (17.65

.685 17.40)

Dia.

.240 6.10)

.045 (1.14

.035 0.89)

.835 (21.21

.815 20.70)

.707 (17.96

.697 17.70)

.550 (13.97

.530 13.46)

1.302 (33.07

1.202 30.53)

.065 (1.65

.200(5.08) BSC

2 Places

.140(3.56) BSC

.055 1.40)

3 Places

PINOUT TABLE

TYPE

PIN 1

PIN 2

PIN 3

SINGLE RECTIFIER

CATHODE

ANODE 1

ANODE

COMMON

CATHODE

COMMON

ANODE

ANODE 2

DUAL RECTIFIER/COMMON CATHODE (P)

DUAL RECTIFIER/COMMON ANODE (N)

DUAL RECTIFIER/DOUBLER (D)

CATHODE 1

ANODE

CATHODE 2

CATHODE

ANODE/

CATHODE

SCHEMATIC

SINGLE

COMMON CATHODE

COMMON ANODE

DOUBLER

Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche

capabilities of the device are limited.

Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially

damaging conditions in their applications.

 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com

SHDC624172

SHDC624172P

SHDC624172N

SHDC624172D

SENSITRON

SEMICONDUCTOR

DATA SHEET 5341, Rev. -

DISCLAIMER:

1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product

characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the

datasheet(s).

2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical

equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’

fail-safe precautions or other arrangement .

3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of

the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any

other problems that may result from applications of information, products or circuits described in the datasheets.

4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at

a value exceeding the absolute maximum rating.

5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.

6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron

Semiconductor.

7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder

maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When

exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.

 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com

5341 [SENSITRON]

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