1N914-GT3 [SENSITRON]
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2;
| 型号： | 1N914-GT3 |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, DO-35, GLASS PACKAGE-2 二极管 |
| 文件： | 总3页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
1N914 / DL914
ꢀ
SEMI CONDUCTOR
FAST SWITCHING DIODE
Data Sheet 2768, Rev. -
Features
ꢀ
Fast Switching Speed
ꢀ
ꢀ
ꢀ
Glass Package Version for High Reliability
High Conductance
Available in Both Through-Hole and Surface
Mount Versions
A
B
A
A
B
C
D
C
1N914
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DL914
Mechanical Data
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Case: DO-35, MiniMELF
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
DO-35
Max
—
MiniMELF
Max
Dim Min
Min
1.000
—
Max
—
Dim MIn
MIn
Max
ꢀ
ꢀ
A
B
C
D
25.40
—
A
B
C
3.30 3.70
0.130 0.146
0.051 0.063
0.011 0.020
In inch
Weight:
DO-35
MiniMELF 0.05 grams
Marking: Cathode Band Only
0.13 grams
4.00
0.60
2.00
0.157
0.024
0.079
1.30 1.60
0.28 0.50
In mm
—
—
ꢀ
—
—
in mm
In inch
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Maximum Ratings @TA=25°C unless otherwise specified
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Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
V
ꢀ
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
RMS Reverse Voltage
VR(RMS)
IFM
53
V
Forward Continuous Current (Note 1)
300
mA
Rectified Current (Average), Half Wave Rectification with
Resistive Load and f ≧ 50MHz (Note 1)
IO
IFSM
Pd
150
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0s
1.0
2.0
A
@ t = 1.0µs
Power Dissipation (Note 1)
Derate Above 25°C
500
1.68
mW
mW/°C
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
RθJA
300
K/W
Tj, TSTG
-65 to +175
°C
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
1N914 / DL914
ꢀ
SEMICONDUCTOR
Data Sheet 2768, Rev. -
FAST SWITCHING DIODE
Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
IF = 10mA
Maximum Forward Voltage
VFM
—
1.0
5.0
V
µA
VR = 75V
50
30
25
µA
µA
nA
VR = 70V, Tj = 150°C
VR = 20V, Tj = 150°C
VR = 20V
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Maximum Peak Reverse Current
IRM
—
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Capacitance
Cj
trr
—
—
4.0
4.0
pF
ns
VR = 0, f = 1.0MHz
IF = 10mA to IR = 1.0mA
VR = 6.0V, RL = 100Ω
Reverse Recovery Time
.
Note: 1. Diode on Ceramic Substrate 10mm x 8mm x 0.7mm.
1000
10,000
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ꢀ
100
1000
ꢀ
ꢀ
10
100
ꢀ
1.0
10
0.1
VR = 20V
1
0.01
0
100
200
0
1
2
Tj, JUNCTION TEMPERATURE (°C)
Fig. 2 Leakage Current vs Junction Temperature
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
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regulations.
• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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