1N5397S-GT3 [SENSITRON]
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2;型号: | 1N5397S-GT3 |
厂家: | SENSITRON |
描述: | Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2 二极管 |
文件: | 总3页 (文件大小:136K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SENSITRON
1N5391S – 1N5399S
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SEMICONDUCTOR
1.5A SILICON RECTIFIER
Data Sheet 2579, Rev. —
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Features
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Diffused Junction
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Fast Switching for High Efficiency
High Current Capability and Low Forward Voltage Drop
Low Reverse Leakage Current
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Surge Overload Rating to 50 A Peak
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Plastic Material – UL Flammability Classification Rating 94V-0
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DO-41
Max
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Mechanical Data
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Dim
A
Min
Min
Max
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Case: Molded Plastic
25.4
1.000
—
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Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
B
4.06 5.21 0.159 0.205
0.71 0.864 0.028 0.034
2.00 2.72 0.079 0.107
C
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D
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Weight: 0.30 grams (approx.)
Mounting Position: Any
Marking: Type Number
In mm
In inch
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
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Single Phase, half wave, 60Hz, resistive or inductive load.
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For capacitive load, derate current by 20%.
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1N
1N
1N
1N
1N
1N
1N
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Characteristic
Symbol
Unit
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5391S 5392S 5393S 5395S 5397S 5398S 5399S
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Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.5
700
V
A
Average Rectified Output Current
(Note 1)
@TA = 70°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 1.5A
VFM
IRM
1.1
V
µA
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
50
Typical Junction Capacitance (Note 2)
Cj
20
55
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RθJA
K/W
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +150
-65 to +150
°C
°C
TSTG
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
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SENSITRON
1N5391S – 1N5399S
SEMICONDUCTOR
Data Sheet 2579, Rev. —
1.5A SILICON RECTIFIER
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10
1.5
1.0
0.5
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1.0
0.1
Tj = 25°C
0.01
0
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
175
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA AMBIENT TEMPERATURE (ºC)
Fig. 1, Forward Current Derating Curve
100
50
40
Tj = 25°C
f = 1MHz
8.3 ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
30
20
10
10
0
1.0
1.0
10
100
100
10
1.0
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 Typical Junction Capacitance
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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