1N5393S-G [SENSITRON]
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2;
| 型号： | 1N5393S-G |
| 厂家： | 
SENSITRON |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2 二极管 |
| 文件： | 总3页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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SENSITRON
1N5391S – 1N5399S
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SEMICONDUCTOR
1.5A SILICON RECTIFIER
Data Sheet 2579, Rev. —
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Features
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Diffused Junction
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Fast Switching for High Efficiency
High Current Capability and Low Forward Voltage Drop
Low Reverse Leakage Current
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Surge Overload Rating to 50 A Peak
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Plastic Material – UL Flammability Classification Rating 94V-0
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DO-41
Max
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Mechanical Data
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Dim
A
Min
Min
Max
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Case: Molded Plastic
25.4
1.000
—
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Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
B
4.06 5.21 0.159 0.205
0.71 0.864 0.028 0.034
2.00 2.72 0.079 0.107
C
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D
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Weight: 0.30 grams (approx.)
Mounting Position: Any
Marking: Type Number
In mm
In inch
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
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Single Phase, half wave, 60Hz, resistive or inductive load.
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For capacitive load, derate current by 20%.
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1N
1N
1N
1N
1N
1N
1N
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Characteristic
Symbol
Unit
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5391S 5392S 5393S 5395S 5397S 5398S 5399S
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Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.5
700
V
A
Average Rectified Output Current
(Note 1)
@TA = 70°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage
@IF = 1.5A
VFM
IRM
1.1
V
µA
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
50
Typical Junction Capacitance (Note 2)
Cj
20
55
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RθJA
K/W
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +150
-65 to +150
°C
°C
TSTG
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
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SENSITRON
1N5391S – 1N5399S
SEMICONDUCTOR
Data Sheet 2579, Rev. —
1.5A SILICON RECTIFIER
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10
1.5
1.0
0.5
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1.0
0.1
Tj = 25°C
0.01
0
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
175
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TA AMBIENT TEMPERATURE (ºC)
Fig. 1, Forward Current Derating Curve
100
50
40
Tj = 25°C
f = 1MHz
8.3 ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
30
20
10
10
0
1.0
1.0
10
100
100
10
1.0
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
Fig. 4 Typical Junction Capacitance
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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means of users’ fail-safe precautions or other arrangement.
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